• 한국전기전자재료학회논문지
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• 제30권10호
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• pp.646-650
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• 2017

We have evaluated the ferroelectric and electrical properties of pure $BiFeO_3$ (BFO) and $Bi_{0.9}A_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (A=Nd, Tb) thin films on $Pt(111)/Ti/SiO_2/Si(100)$ substrates by using a chemical solution deposition method. The remnant polarization ($2P_r$) of the $Bi_{0.9}Tb_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (BTFVO) thin film was approximately $65{\mu}C/cm^2$, with a maximum applied electric field of 950 kV/cm and a frequency of 10 kHz, where as that of the $Bi_{0.9}Nd_{0.1}Fe_{0.975}V_{0.025}O_{3+{\alpha}}$ (BNFVO) thin film was approximately $37{\mu}C/cm^2$ with a maximum applied electric field of 910 kV/cm. The leakage current density of the co-doped BNFVO thin film was four orders of magnitude lower than that of the pure BFO thin film, at $2.75{\times}10^{-7}A/cm^2$ with an applied electric field of 100 kV/cm. The grain size and uniformity of the co-doped BNFVO and BTFVO thin films were improved, in comparison to the pure BFO thin film, through structural modificationsdue to the co-doping with Nd and Tb.

• Transactions on Electrical and Electronic Materials
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• 제12권5호
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• pp.193-196
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• 2011

Lead zirconate titanate (PZT)/ bismuth ferrite (BFO) multilayer thin films have been fabricated by the spin-coating method on Pt(200 nm)/Ti(10 nm)/$SiO_2$(100 nm)/p-Si(100) substrates using $BiFeO_3$ and $Pb(Zr_{0.52}Ti_{0.48})O_3$ metal alkoxide solutions. The PZT/BFO multilayer thin films show a uniform and void-free grain structure, and the grain size is smaller than that of PZT single films. The reason for this is assumed to be that the lower BFO layers play an important role as a nucleation site or seed layer for the formation of homogeneous and uniform upper PZT layers. The dielectric constant and dielectric losses decreased with increasing number of coatings, and the six-layer PZT/BFO thin film has good properties of 162 (dielectric constant) and 0.017 (dielectric losses) at 1 kHz. The remnant polarization and coercive field of three-layer PZT/BFO thin films were 13.86 ${\mu}C/cm^2$ and 37 kV/cm respectively.

• E2M - 전기 전자와 첨단 소재
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• 제9권3호
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• pp.251-258
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• 1996

Sol-Gel derived ferroelectric Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ thin films have been fabricated on Pt/Ti/ $SiO_{2}$/Si substrate. Two kinds of fast annealing methods, F-I (six times of intermediate and final annealing) and F-II(one final annealing after six times of intermediate annealing) were used for preparation of multi-coated PZT thin films. As the annealing temperature was increased, high capacitance could be obtained, for instance, 2700.angs.-thick PZT thin film annealed at 680.deg. C had a capacitance value of approximately 20nF at 1kHz. In addition, it is found that the dielectric constant is a function of the perovskite phase fraction. In case of F-I method, PZT thin film had a remanent polarization(Pr) of 8-15.mu.C/c $m^{2}$ and a coercive field( $E_{c}$) of 35-44kV/cm according to annealing temperature, whereas PZT film fabricated by F-II method had as high as 24-25.mu.C/c $m^{2}$ and 48-59kV/cm, respectively. As a result of measuring Curie temperature, PZT thin film had a range of 460-480.deg. C by F-I method and more or less higher range of 525-530.deg. C by F-II method, which implied that different microstructures could cause the different Curie temperature. Through I-V measurement, leakage current of PZT thin film fabricated by F-I and F-II methods was 64nA/c $m^{2}$ and 2.2.mu.A/c $m^{2}$ in the electric field of 100kV/cm, respectively.y.y.y.

• 한국전기전자재료학회논문지
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• 제31권4호
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• pp.226-230
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• 2018

Pure $BiFeO_3$ (BFO) and codoped $Bi_{0.9}A_{0.1}Fe_{0.975}Zn_{0.025}O_{3-{\delta}}$ (A=Eu, Dy) thin films were prepared on Pt(111)/Ti/$SiO_2$/Si(100) substrates by chemical solution deposition. The remnant polarizations (2Pr) of the $Bi_{0.9}Eu_{0.1}Fe_{0.975}Zn_{0.025}O_{3-{\delta}}$ (BEFZO) and $Bi_{0.9}Dy_{0.1}Fe_{0.975}Zn_{0.025}O_{3-{\delta}}$ (BDFZO) thin films were about 36 and $26{\mu}C/cm^2$ at the maximum electric fields of 900 and 917 kV/cm, respectively, at 1 kHz. The codoped BEFZO and BDFZO thin films showed improved electrical properties, and leakage current densities of 3.68 and $1.21{\times}10^{-6}A/cm^2$, respectively, which were three orders of magnitude lower than that of the pure BFO film, at 100 kV/cm.

• KIEE International Transactions on Electrophysics and Applications
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• 제11C권2호
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• pp.18-22
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• 2001

The thin films of high permitivity in ferroelectric materials using a capacitor are applied to DRAMs and FRAMs. (Ba, Sr)TiO$_3$ thin as ferroelectric materials were prepared by the sol-gel method and made by spin-coating on the Pt/Sio$_2$/Si substrate at 4,000 [rpm] for 10 seconds. The structural characteristics of the surface were analyzed by fractal dimension. The thickness of BST ceramics thin films was about 260∼280 [nm]. The property of the leakage current was stable with 10-9∼10-11[A] when the applied voltage was 0∼3[V]. BST thin films ha low leakage current properties when fractal dimension was low and a coating area was high.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.278-281
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• 1999

PLZT thin films on Pt/Ti/SiO$_2$/Si substrate were fabricated with different Thickness by pulsed laser deposition. 14/50/50 PLZT thin film showed a maximum dielectric constant value of $\varepsilon$$_{t}$=985 at 5000$\AA$, and $\varepsilon$$_{t}$=668 at 2000A. P-EI hysteresis loop of 14/50/50 PLZT thin film was slim ferroelectric. Leakage current density of 14/50/70 PLZT thin film was 10$^{-8}$ A/$\textrm{cm}^2$ at 2000$\AA$.EX>.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.667-670
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• 2004

The dielectric properties of PZT(4060)/(6040) multilayered thin films with substrate temperature were investigated. PZT(4060)/(6040) thin films were deposited by RF sputtering method on Pt/Ti/$SiO_2$/Si substrates with different substrate temperature of $200{\sim}700^{\circ}C$. Increasing the substrate temperature, perovskite structure was increased, and PZT (001), (110), (002), (200) peaks were increased. The relative dielectric constant and dielectric loss of PZT(4060)/(6040) multilayered thin films at the substrate temperature of $700^{\circ}C$ were 843 and 2.45, respectively at 1000(Hz).

• 대한전자공학회논문지SD
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• 제40권9호
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• pp.631-637
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• 2003

Pt/TiO/sub x/SiO₂/Si 기판 위에 1,3-propanediol 을 이용해 sol-gel 법으로 제작한 PZT(30/70) 후막의 구조적 및 전기적, 강유전 특성에 대하여 조사하였다. 열처리 공정은 열 응력 (thermal stress) 를 줄이기 위해 RTA를 사용하였고, 최종적으로 650℃의 로(furnace)에서 어닐링하였다. SEM 분석 결과 1회 코팅에 330nm 의 두께를 얻었으며, 3회 코팅으로 약 1 μm 정도의 두께를 얻었다. C-D 측정결과, 1 kHz에서 비유전률과 유전손실은 각각 886 과 0.03 이었다. C-V 곡선은 좌우 대칭인 나비모양을 나타내었다. 누설전류밀도는 200kV/cm 에서 1.23×10/sup -5/A/cm²이었으며, 이력곡선으로부터 구한 잔류분극 (P/sub r/) 과 항전계(E/sub c/) 는 각각 33.8μC/cm²과 56.9kV/cm 이었다. 결론적으로 본 연구에서 제작된 PZT(30/70) 후막은 우수한 강유전 및 전기적 특성을 보였다.

• 한국재료학회지
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• 제11권1호
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• pp.27-33
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• 2001

본 실험에서는 $Pt/Ti/SiO_2/Si(100)$ 기판 위에 KLN 박막을 형성할 때 나타나는 4-fold 그레인의 성장 특성을 조사하기 위하여 공정 변수를 변화시키면서 박막을 제작하였다. 공정 변수는 기판 온도, 스퍼터링 압력, 고주파 전력을 선택하여 최적의 증착 조건 근방에서 공정 변수를 변화시키면서 실험하였다. K와 Li가 과량된 타겟을 사용하여 KLN 박막을 제조할 때 최적의 성장 조건은 고주파 전력 100 W, 공정압력 150 mTorr, 기판온도 $600^{\circ}C$이며 공정변수의 작은 변화에도 박막의 표면 형상은 매우 민감하게 변화하였다. KLN은 화합물을 구성하는 원소 사이의 증기화 온도의 차이가 많이나는 물질로서 고온 고진공의 환경에서 박막을 제조할 때 어려움이 있으며, 녹는점과 기판 온도와의 관계를 설명한 Thornton의 모델로 설명하기 어려운 현상이 나타났다. 이러한 것은 박막 물질을 이루는 구성 원소의 증기화 온도를 이용하여 이 현상을 간단하게 설명할 수 있었다.

• 한국재료학회지
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• 제19권11호
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• pp.601-606
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• 2009

$BiFeO_3$ (BFO) thin films were prepared on $Pt/TiO_2/Si$ substrate by r.f. magnetron sputtering. The effects of deposition pressure on electrical properties were investigated using measurement of dielectric properties, leakage current and polarization. When BFO targets were prepared, Fe atoms were substituted with Mn 0.05% to increase electrical resistivity of films. (Fe+Mn)/Bi ratio of BFO thin films increases with increasing partial pressure of $O_2$ gas. The deposited films showed the only BFO phase at 10 mTorr, the coexistence of BFO and $Bi_2O_3$ phase at 30-50 mTorr, and the only $Bi_2O_3$ phase at 70 mTorr. The crystallinity of BFO films was reduced due to the higher Bi contents and the decrease of surface mobility of atoms at high temperature. The porosity and surface roughness of films increased with the increase of the deposition pressure. The films deposited at high pressure showed low dielectric constant and high leakage current. The dielectric constant of films deposited at various deposition pressures was 84${\sim}$153 at 1 kHz. The leakage current density of the films deposited at 10${\sim}$70 mTorr was about $7{\times}10.6{\sim}1.5{\times}10.2A/cm^2$ at 100 kV/cm. The leakage current was found to be closely related to the morphology and composition of the BFO films. BFO films showed poor P-E hysteresis loops due to high leakage current.