• Transactions on Electrical and Electronic Materials
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• 제14권3호
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• pp.130-132
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• 2013

$Bi_{3.25}La_{0.75}Ti_3O_{12}$(BLT) thin films were prepared on the Pt(150 nm)/Ti(50 nm)/$SiO_2$/Si substrate using the rf magnetron sputtering method. The BLT thin films were annealed at temperatures ranging from $600^{\circ}C$ to $750^{\circ}C$ using the rapid thermal annealing. The structure and surface morphology of the thin films were characterized by x-ray diffraction and field emission scanning electron microscopy. The hysteresis loop of the BLT thin films showed that the remanent polarization (2Pr) of the film annealed at $700^{\circ}C$ was 10.92 ${\mu}C/cm^2$. The fatigue characteristic of the BLT thin film annealed at $700^{\circ}C$ was shown change polarization up to $1.2{\times}10^9$ switching cycles. We confirmed the excellent remnant polarization (Pr) and fatigue properties compared with other fabrication methods and suggested a good method for BLT thin films fabrications.

• 한국전기전자재료학회논문지
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• 제22권1호
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• pp.29-34
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• 2009

PLZT thin films were deposited on platinized silicon (Pt/$TiSiO_2$/Si) substrate by RF magnetron sputtering. A $TiO_2$ buffer layer was fabricated, prior to deposition of PLZT films. the layer was strongly affected the crystallographic orientation of the PLZT films. X-ray diffraction was performed on the films to study the crystallization of the films as various substrate temperatures (Ts). According to increasing Ts, preferred orientation of films was changed (110) plane to (111) plane. The ferroelectric, dielectric and electrical properties of the films were also investigated in detail as increased substrate temperatures. The PLZT films deposited at $400^{\circ}C$ showed good ferroelectric properties with the remnant polarization of $15.8{\mu}C/cm^2$ and leakage current of $5.4{\times}10^{-9}\;A/cm^2$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.49-52
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• 2003

The role of gas ratio with the crystallization behavior and electrical properties in $Bi_{3.25}La_{0.75}Ti_3O_{12}$(BLT) thin films by rf magnetron sputtering method has not been precisely defined. In this work, the ferroelectric properties of these films with gas variation was investigated. BLT thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method and then they were crystallized by rapid thermal annealing (RTA). The experiment showed that all BLT films indicated perovskite polycrystalline structure with preferred orientation (020) and (0012). And no pyrochlore phase was observed. The fabricated film annealed with $O_2$ of 15 sccm showed that value of leakage current was $9.67{\times}10^{-7}A/cm^2$ at 50kV /em, and the value of remanent polarization (2Pr=Pr+-Pr-) was $11.8{\mu}C/cm^2$. Therefore we induce access to memory device application by rf-magnetron sputtering method in this report.

• 전자공학회논문지D
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• 제36D권6호
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• pp.44-51
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• 1999

High density DRAM의 cell capacitor로 촉망 받고 있는 고유전체 BST박막 커패시터의 저 전계(<0.2MV/cm) 영역에서의 전기전도 현상을 분석하였다. 저 전계 영역에서 Pt/BST/Pt구조의 MIM 커패시터에 일정 전계를 인가한 후 전류를 측정하는 I(t)방법을 이용하여 유전완화전류와 누설전류를 분리해내어 박막의 측정온도 변화, 전계의 크기, 인가방향 변화, 후속 열처리에 따른 BST 박막의 전기전도 기구를 분석하였다. 그 결과, 유전완화전류는 Hoppiong process에 의한 BST박막내부의 trap된 전자들의 이동에 의한 전하재배치로 설명되어지며, 누설전류도 박막내의 trap에 의한 poole-Frenkel process에 의한 것임을 알 수 있었다. 그리고 각 전류성분에 기억하고 있는 trap이 BST박막내의 산호 결핍임을 추정하였다.

• 한국전기전자재료학회논문지
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• 제14권10호
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• pp.785-791
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• 2001

High dielectric (Ba, Sr) TiO$_3$ thin films were etched in an inductively coupled plasma (ICP) as a function of Cl$_2$/Ar mixing ration. Under Cl$_2$(20)/Ar(80), the maximum etch rate of the BST films was 400 $\AA$/mim and selectivities of BST to Pt and PR were obtained 0.4 and 0.2, respectively. Etching products were redeposited on the surface of BST and resulted in varying the nature of crystallinity. Therefore, we investigated the etched surface of BST by x-ray photoelectron spectroscopy (XPS) atomic force microscopy (AFM) and x-ray diffraction (XRD). From the result of XPS analysis, we found that residues of Ba-Cl and Ti-Cl bonds remained on the surface of the etched BST for high boiling point. The morphology of the etched surfact was analyzed by AFM. A smoothsurface(roughness ~2.8nm) ws observed under Cl$_2$(20)/Ar(80), rf power of 600 W, dc bias voltage of -250 V and pressure of 10 mTorr. This changed the nature of the crystallinity of BST. From the result of XRD analysis, the crystallinities of the etched BST film under Ar only and Cl$_2$(20)/Ar(80) were maintained as similar to as-deposited BST. However, intensity of BST(100) orientation under Cl$_2$ only plasma was abruptly decreased. This indicated that CI compounds were redeposited on the etched BST surface and resulted in changed of the crystallinity of BST during the etch process.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권3호
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• pp.156-156
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• 2000

The piezoelectric properties and the doping effect for $0.95Pb(Zr_xTi_{l-x})O_3+0.O5Pb(Mn_{1/3}Nb_{2/3})O_3$compositions were studied. Also, the heat generation and the change of electromechanical characteristics, the important problem in practical usage, were investigated under high electric field driving. As a experiment results under low electric field, the value of $k_p$ and ${\varepsilon}_{33}^T$ were maximized, but $Q_m$ was minimized $(k_p=0.57, Q_m=1550)$ in the composition of x=0.51. In order to increase the values of $Q_m$, $Nb_2O_5$ was used as a dopant. As the result of that, the grain size was suppressed and the uniformity of grain was improved. Also, the values of $k_p$ decreased, and the values of $Q_m$ increased with doping concentration of $Nb_2O_5$ . As a experiment results under high electric field driving, when vibration velocity was ower than 0.6[m/s], the temperature increase was 20[℃], and the change ratio of mechanical quality factor was less than 10[%]. So, its electromechanical characteristics was very stable. Conclusively, piezoelectric ceramic composition investigated at this paper is suitable for application to high power piezoelectric devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.187-191
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• 1995

Thin film of the (Pb$\_$1-x/La.sub x/)(Zr$\_$0.25/Ti/Sub 0.48/) O$_3$(x=0~13[at%]) were prepared by Sol - Gel method. Multi-layer PLZT thin films were fabricated by spin-coating on Pt/Ti/SiO$_2$/Si substrate. The crystallinity and microstructure of the films were investigated with the sintering condition. At the sintering temperature of of 600[$^{\circ}C$], the perovskite phase was dominat. PLZT(11/52/48)thin films sintered at 600[$^{\circ}C$], 1[hr] had good dielectric constant (1236), dielectric loss (2.2[%]), remanent polarization (1.38[${\mu}$C/$\textrm{cm}^2$] and coercive field(16.86[ kV/cm]) respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.56-59
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• 2000

In this study, Ferroelectric $Pb(Zr_x,Ti_{1-x})O_3$(x=0.53) thin films were fabricated by the spin-coating on the Pt/Ti/$SiO_2$/Si substrate using the PZT metal alkoxide solutions with various excess Pb contents. Etching of PZT film was performed using planar inductively coupled Ar(20)$/Cl_2/BCl_3$ plasma. The etch rate of PZT film was 2450 ${\AA}/min$ at Ar(20)$/BCl_3$(80) gas mixing ratio and substrate temperature of $80^{\circ}C$. The leakage current densities of before etching and after etching PZT thin film were $6.25\times10^{-8}A/cm^2$, $8.74\times10^{-7}A/cm^2$ with electric field of 0.07MV/em, respectively.

• 한국결정성장학회지
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• 제19권2호
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• pp.70-74
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• 2009

Sol-gel 법으로 제조한 $Pb(Sc_{1/2}Nb_{1/2})O_3$(이하 PSN) sol을 이용하여 스핀 코팅법으로 Pt(111)/Ti/$SiO_2$/Si 기판위에 제조한 박막의 제조 공정에 따른 영향을 연구하였다. Pt 기판위에 PSN sol을 증착, 건조한 후에 $370^{\circ}C$에서 5분간 열처리를 행한 후 $10^{\circ}C/sec$의 급속 가열로 $600{\sim}700^{\circ}C$에서 최종 열처리한 경우에 박막은 (111)면으로 우선 배향하는 것으로 나타났다. 그러나 중간 열처리를 거치지 않고, 급속가열에 의한 최종 열처리만을 행한 경우에는 (100)면으로 우선 배향하는 것으로 나타났다. 한편, 중간 열처리 후 $4^{\circ}C/min$의 승온속도로 관상로에서 최종 열처리를 행한 경우에는 (111)면과 (100)면이 동시에 나타나는 것으로 나타났다. 동일한 조건하에서 박막의 두께는 모두 300로 중간 열처리 공정이 어떠한 영향도 미치지 않는 것으로 나타났다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1537-1539
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• 1997

In this study, the dielectric properties of $Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3$ Ceramics have been investigated as a addition of the amount of $MnO_2(0{\leq}x{\leq}0.9wt%)$. The Temperature-dependant dielectric characteristics of 0.9PMN-0.1PT relaxor ferroelectric system were improved by enhencing the extent of the diffuse phase transition(DPT). The maximum dielectric permittivity decreased by substitution $MnO_2$ and the dielectric loss decreased with increasing $MnO_2$ substitution amount. It is expected decreasing in inner heat energy for temperature with increasing $MnO_2$ substitution.