Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effect of Annealing Temperature on the Properties of Sputtered Bi3.25La0.75Ti3O12 Thin Films

  • Kang, Hyunil (Department of Electrical Engineering, Hanbat National University) ;
  • Song, Joontae (School of Information and Communication Engineering, Sungkyunkwan University)
  • Received : 2012.11.26
  • Accepted : 2013.03.04
  • Published : 2013.06.25
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Abstract

$Bi_{3.25}La_{0.75}Ti_3O_{12}$(BLT) thin films were prepared on the Pt(150 nm)/Ti(50 nm)/$SiO_2$/Si substrate using the rf magnetron sputtering method. The BLT thin films were annealed at temperatures ranging from $600^{\circ}C$ to $750^{\circ}C$ using the rapid thermal annealing. The structure and surface morphology of the thin films were characterized by x-ray diffraction and field emission scanning electron microscopy. The hysteresis loop of the BLT thin films showed that the remanent polarization (2Pr) of the film annealed at $700^{\circ}C$ was 10.92 ${\mu}C/cm^2$. The fatigue characteristic of the BLT thin film annealed at $700^{\circ}C$ was shown change polarization up to $1.2{\times}10^9$ switching cycles. We confirmed the excellent remnant polarization (Pr) and fatigue properties compared with other fabrication methods and suggested a good method for BLT thin films fabrications.

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  1. Bi3.25La0.75Ti3O12 thin film capacitors for energy storage applications vol.111, pp.18, 2017, https://doi.org/10.1063/1.4997351