• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.11
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• pp.63-70
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• 1999

A PLT(10) thin film has been deposited on $Pt/TiO_2/SiO_2/Si$ substrate by sol-gel method, and its switching characteristics have been investigated with various top electrode areas, input pulse voltages and loan resistances. As the external input pulse voltage increases from 2V to 5V, the switching time decreases from $0.49{\mu}s$ to $0.12{\mu}s$. The activation energy ($E_a$) obtained from the relations between the switching time and the applied pulse voltage is evaluated as 209kV/cm. The switched charge densities at 5V obtained from the hysteresis loop and the polarization switching are $11.69{\mu}C/cm^2$ and $13.02{\mu}C/cm^2$, respectively, which agree relatively well with each other and show the difference of 10%. When the top electrode area increases from TEX>$3.14{\times}10^{-4}cm^2$ to $5.03{\times}10^{-3}cm^2$ and the load resistance increases from 50${\Omega}$ to 3.3$k{\Omega}$, the switching time increases from $0.12{\mu}s$ to $1.88{\mu}s$ and from $0.12{\mu}s$ to $9.7{\mu}s$, respectively. These switching characteristics indicate that PLT(10) thin film can be well applied in nonvolatile memory devices.

• Korean Journal of Materials Research
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• v.17 no.2
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• pp.81-85
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• 2007

Embedded capacitor technology can improve electrical perfomance and reduce assembly cost compared with traditional discrete capacitor technology. To improve the capacitance density of the $Al_2O_3$ based embedded capacitor on Cu cladded fiber reinforced plastics (FR-4), the specific surface area of the $Al_2O_3$ thin films was enlarged and their surface morphologies were controlled by anodization process parameters. From I-V characteristics, it was found that breakdown voltage and leakage current were 23 V and $1{\times}10^{-6}A/cm^2$ at 3.3 V, respectively. We have also measured C-V characteristics of $Pt/Al_2O_3/Al/Ti$ structure on CU/FR4. The capacitance density was $300nF/cm^2$ and the dielectric loss was 0.04. This nano-porous $Al_2O_3$ is a good material candidate for the embedded capacitor application for electronic products.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1242-1244
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• 1995

The dielectric and polarizable properties of $0.9Pb_{1-x}La_x({Mg}_{1/3}Nb_{2/3})O_3-0.1PbTiO_3$ (x=0,1,2,3,4,5) have been investigated. The temperature-dependant electrostictive characteristics of 0.9PMN-0.1PT relaxor ferroelectric system were improved by enhencing the extent of the diffuse phase transition(DPT). This was achieved using PMN-PTceramics by the partial substitution of La at the Pb site. The curie temperature and the maximum dielectric permittivity decreased by substituting La and the electric field-related hysteresis phenomena decreased with increasing La substitution amount.

• Journal of the Korean Vacuum Society
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• v.5 no.2
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• pp.107-112
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• 1996

Thin films of $Pb(Zr_xTi_{1-x})O_3$)PZT) were grown on $Pt/SiO_2/Si(100)$ at various temperatures by RF magnetron sputtering method. Surface morphology of these films were studied by using Atomic Force Microscopy(AFM). These films were also analyzed by using Atomic Force Microscopy(AFM). These films were also analyzed by using X-ray photoemission spectroscopy(XPS) for determining their chemical composition and their depth profile. It was found that the films grown at the substrated temperature of $300^{\circ}C$ have much more smooth surface characteristics in comparison to those films grown at room temperature, which may be explained in terms of surface mobility of ad-atoms such as Pb. It was also found that Pb enrichment in the near surface region enhanced for the films grown at higher substate temperature.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1988-1990
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• 2002

마이크로 바이오칩용 미세 무게 감지 소자를 개발하기 위해 통상적인 MEMS 공정에 PZT sol solution을 함침하여 binder로서 적용하는 복합적인 스크린 인쇄 방법을 적용해 $800-850^{\circ}C}$의 비교적 저온에서 높은 소결밀도와 우수한 전기적인 특성을 가지는 PZT-0.12PCW 후막 구동형 캔틸레버 소자를 Pt/$TiO_2$/YSZ/$SiO_2$/Si 기판에 제조하였다. 제조된 PZT-0.12PCW 후막 구동형 캔틸레버 소자의 공진 주파수와 변위를 레이저 미소 변위 측정 시스템을 이용하여 공기 중 및 액체 중에서 측정함으로써 캔틸레버 크기에 따른 공진 특성 변화, 액체 내에서의 댐핑 효과 등을 분석할 수 있었다. 또한 Au를 증착하거나biotin-streptoavidin 반응을 통해 단백질을 고정화시켜 무게변화를 야기시킨 후 소자의 감도를 평가함으로써 PZT-0.12PCW 후막 구동형 캔틸레버를 우수한 성능의 바이오칩용 미세 무게 감지 소자로 응용할 수 있음을 알 수 있었다.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1394-1395
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• 2006

$(Na_{0.5}LaK_{0.5})NbO_3$ (NKN) thin films were fabricated by the alkoxide-based MOD method. NKN stock solutions were made spin-coated onto the Pt/Ti/$SiO_2$/Si substrate. The structural properties of the NKN thin films examined by x-ray diffraction. The perovskite phase was obtained as a function of the annealing temperature from $550^{\circ}C$ to $700^{\circ}C$ for 1h. The crystallinity and grain size of the NKN thin films increased with increasing annealing temperature. The dielectric constants and loss of the NKN thin films annealed at $650^{\circ}C$ ($t_{eq}$=2.35 nm) showed 323 and 0.025.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.3
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• pp.155-160
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• 2000

The piezoelectric properties and the doping effect for$0.95Pb(Zr_xTi_{1-x})O_3+0.05Pb(Mn1/3Nb2/3)O_3$ compositions were studied. Also, the heat generation and the change of electromechanical characteristics, the important problem in practical usage, were investigated under high electric field driving. As a experiment results under low electric field, the values of kp and $\varepsilon33T$ were maximized, but Qm was minimized(Kp=0.57, Qm=1550) in the composition of x=0.51. In order to increase the values of Qm $Nb_2O_5$ was used as a dopant. As the result of that, the grain size was suppressed and the uniformity of grain was improved. Also, the values of kp decreased, and the values of Qm increased with doping concentration of $Nb_2O_5$. As a experiment results under high electric field driving, when vibration velocity was lower than 0.6[m/s], the temperature increase was $20[^{\circ}C]$, and the change ratio of mechanical quality factor was less than 10[%]. So, its electromechanical characteristics was very stable. Conclusively, piezoelectric ceramic composition investigated at this paper is suitable for application to high power piezoelectric devices.

• Journal of the Korean Ceramic Society
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• v.35 no.10
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• pp.1107-1112
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• 1998

We could obtan c-axis oriented $SrBi_2$$Ta_2$$O_9$ thin films on usual Pt(111)/Ti/$SiO_2$/Si(100) substrate using a r. f. magnetron sputtering technique. According to the increase of sputtering pressure from 250 to 300 mTorr the Bi content and degree of the c-a xis preferred orientation of $SrBi_2$$Ta_2$$O_9$ thin films were increased. By controlling Bi(or $Bi_2O_3$) loss from $SrBi_2$$Ta_2$$O_9$ thin films during post annealing and by inserting $Bi_2O_3$ layer in $SrBi_2$$Ta_2$$O_9$ thin films the effect of Bi content on the c-axis oriented growth of $SrBi_2$$Ta_2$$O_9$ thin films could be investigated without the effect of sputtering pressure. The degree of the c-axis preferred orientation of $SrBi_2$$Ta_2$$O_9$ thin films was increased with increasing with increasing Bi content by control of Bi(or $Bi_2O_3$) loss of $SrBi_2$$Ta_2$$O_9$ thin films. But the c-axis oriented growth of $SrBi_2$$Ta_2$$O_9$ thin films disappeared by the inserting of $Bi_2O_3$ lay-er in $SrBi_2$$Ta_2$$O_9$ thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.248-249
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• 2007

The $V_{1.9}W_{0.1}O_5$ thin films deposited on Pt/Ti/$SiO_2$/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.9}W_{0.1}O_5$ thin films annealed at $300^{\circ}C$ were 37.7, with a dielectric loss of 2.535, respectively. Also, the TCR values of the $V_{1.9}W_{0.1}O_5$ thin films annealed at $300^{\circ}C$ were about -3.7%/K.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.817-820
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• 2004

The $Sr_{0.7}Bi_{2.6}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode($Pt/TiO_2/SiO_2/Si$) using a RF magnetron sputtering method. The ferroelectric properties of SBT capacitors with annealing time were studied. In the SEM images, Bi-layered perovskite phase was crystallized at 10min and grains largely grew with annealing tune. SBT thin films are transformed from initial amorphous phase to the fully formed layer-structured perovskite. During the annealing process at $750^{\circ}C$, we found that an fluorite-like stage is formed after 3min. In the XRD pattern, the SBT thin films after 3min annealing time had (105) orientation. The ferroelectric properties of SBT capacitor with annealing time represent a favorable properties at 60 min. The maximum remanent polarization and the coercive electric field with 60 min are $12.40C/cm^2$ and 30kV/cm, respectively. The leakage current density with 60min is $6.81{\times}10^{-10}A/cm^2$.