• Journal of the Korean Ceramic Society
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• v.33 no.4
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• pp.391-398
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• 1996

In order to understand the electrostrictive behavior of Pb(Mg1/3Nb2/3)O3-PbTiO3(PMN-PT) solid solutions the dielectric constants and the electric-field-induced strains in (1-x)PMN-xPT (x=0.0-0.4) were investigated in the temperature range -5$0^{\circ}C$-20$0^{\circ}C$. Powder of (1-x)Pb(Mg2/3Nb2/3)O3-xPbTiO3 (x=0.0, 0.1, 0.2, 0.3, 0.35, and 0.4) were prepared from the oxide forms of Pb, Mg, Nb and Ti via a columbite precursor method As the amount of PbTiO3 increases the temperature of maximum dielectric constant(T$\varepsilon$max) increases and the phase transition become less diffusive. The strain maximum occurs only when the diffuse phase transition occurs from rhombohedral to cubic or rhombohedral to tetragonal as in x=0.1-0.35 The strains monotonically decrease with temperature in the materials in which phase transition occurs from tetragonal to cubic as in x=0.4.

• Journal of Environmental Science International
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• v.20 no.2
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• pp.251-260
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• 2011

$TiO_2$- and $SiO_2$-supported $Co_3O_4$, Pt and $Co_3O_4$-Pt catalysts have been studied for CO and $C_3H_8$ oxidations at temperatures less than $250^{\circ}C$ which is a lower limit of light-off temperatures to oxidize them during emission test cycles of gasoline-fueled automotives with TWCs (three-way catalytic converters) consisting mainly of Pt, Pd and Rh. All the catalysts after appropriate activation such as calcination at $350^{\circ}C$ and reduction at $400^{\circ}C$ exhibited significant dependence on both their preparation techniques and supports upon CO oxidation at chosen temperatures. A Pt/$TiO_2$ catalyst prepared by using an ion-exchange method (IE) has much better activity for such CO oxidation because of smaller Pt nanoparticles, compared to a supported Pt obtained via an incipient wetness (IW). Supported $Co_3O_4$-only catalysts are very active for CO oxidation even at $100^{\circ}C$, but the use of $TiO_2$ as a support and the IW technique give the best performances. These effects on supports and preparation methods were indicated for $Co_3O_4$-Pt catalysts. Based on activity profiles of CO oxidation at $100^{\circ}C$ over a physical mixture of supported Pt and $Co_3O_4$ after activation under different conditions, and typical light-off temperatures of CO and unburned hydrocarbons in common TWCs as tested for $C_3H_8$ oxidation at $250^{\circ}C$ with a Pt-exchanged $SiO_2$ catalyst, this study may offer an useful approach to substitute $Co_3O_4$ for a part of platinum group metals, particularly Pt, thereby lowering the usage of the precious metals.

• Korean Journal of Materials Research
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• v.11 no.2
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• pp.151-154
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• 2001

The leakage current behaviors of PLZT capacitors with top electrodes of Pt, Ir, and $IrO_2$ are investigated before and after hydrogen forming gas anneal. The P-E hysteresis and fatigue properties of Pt/PLZT/Pt capacitors are almost recovered after recovery anneal in $O_2$ ambient. The leakage current mechanisms of PLZT capacitors with Pt and $IrO_2$ top electrodes are consistent with space-charge influenced injection model showing the strong time dependence irrespective of annealing conditions. On the other hand, the leakage current behavior of Ir/PLZT/Pt capacitor shows steady state independent of time because IrPb, conducting phase, formed at interface between Ir top and PLZT is a high conduction path. Teh leakage current mechanism of Ir/PLZT/Pt capacitor is consistent with Schottky barrier model.

• Analytical Science and Technology
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• v.27 no.6
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• pp.308-313
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• 2014

The effect of electrochemical characteristics of dye-sensitized solar cells (DSSC) upon employing multi-wall carbon nanotube (MWCNT) on both working electrode and counter electrode were examined with using EIS, J-V curves and UV-Vis absorption spectrometry. When 0.1 wt% of MWCNT was employed in the $TiO_2$-MWCNT composit on working electrode, the energy conversion efficiency increased about 12.5% compared to the $TiO_2$ only working electrode. The higher light conversion efficiency may attribut to the high electrical conductivity of MWCNT in $TiO_2$-MWCNT composite which improves the electron transport in the working electrode. However, higher amount of MWCNT than 0.1 wt% in the $TiO_2$-MWCNT composite decreases the light conversion efficiency, which is mainly ascribed to the decreased transmittance of light by MWCNT and to the decreased adsorption of dye onto $TiO_2$. The MWCNT employed counter electrode exhibited much lower light conversion efficiency of DSSC than the Pt-counter electrode, while the MWCNT-Pt counter electrode showed similar in light conversion efficiency to that of Pt-counter electrode.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.305-305
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• 2010

It is known that a pulse of electrons of high kinetic energy (1-3 eV) in metals can be generated with the deposition of external energy to the surface such as in the absorption of light or in exothermic chemical processes. These energetic electrons are not in thermal equilibrium with the metal atoms and are called "hot electrons" The concept of photon energy conversion to hot electron flow was suggested by Eric McFarland and Tang who directly measured the photocurrent on gold thin film of metal-semiconductor ($TiO_2$) Schottky diodes [1]. In order to utilize this scheme, we have fabricated metal-semiconductor Schottky diodes that are made of Pt or Au as a metallic layer, Si or $TiO_2$ as a semiconducting substrate. The Pt/$TiO_2$ and Pt/Si Schottky diodes are made by PECVD (Plasma Enhanced Chemical Vapor Deposition) for $SiO_2$, magnetron sputtering process for $TiO_2$, e-beam evaporation for metallic layers. Metal shadow mask is made for device alignment in device fabrication process. We measured photocurrent on Pt/n-Si diodes under AM1.5G. The incident photon to current conversion efficiency (IPCE) at different wavelengths was measured on the diodes. We also show that the steady-state flow of hot electrons generated from photon absorption can be directly probed with $Pt/TiO_2$ Schottky diodes [2]. We will discuss possible approaches to improve the efficiency of photon energy conversion.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.436-441
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• 1998

$Pt/SrTiO_3/Pb_x(Zr_{0.52}, Ti_{0.48})O_3/SrTiO_3/Si$ structure was prepared by rf-magnetron sputtering method for use in nondestructive read out ferroelectric RAM(NDRO-FEAM). PBx(Zr_{0.52}Ti_{0.48})O_3}$(PZT) and $SrTiO_3$(STO) films were deposited respectively at the temperatures of $300^{\circ}C and 500^{\circ}C$on p-Si(100) substrate. The role of the STO film as a buffer layer between the PZT film and the Si substrate was studied using X-ray diffraction (XRD), Auger electron spectroscopy (ASE), and scanning electron microscope(SEM). Structural analysis on the interfaces was carried out using a cross sectional transmission electron microscope(TEM). For PZT/Si structure, mostly Pb deficient pyrochlore phase was formed due to the serious diffusion of Pb into the Si substrate. On the other hand, for STO/PZT/STO/Si structure, the PZT film had perovskite phase and larger grain size with a little Pb interdiffusion. the interfaces of the PZT and the STO film, of the STO film and the interface layer and $SiO_2$, and of the $SiO_2$ and the Si substate had a good flatness. Across sectional TEM image showed the existence of an amorphous layer and $SiO_2$ with 7nm thickness between the STO film and the Si substrate. The electrical properties of MIFIS structure was characterized by C-V and I-V measurements. By 1MHz C-V characteristics Pt/STO(25nm)/PZT(160nm)/STO(25nm)/Si structure, memory window was about 1.2 V for and applied voltage of 5 V. Memory window increased by increasing the applied voltage and maximum voltage of memory window was 2 V for V applied. Memory window decreased by decreasing PZT film thickness to 110nm. Typical leakage current was abour $10{-8}$ A/cm for an applied voltage of 5 V.

• Journal of the Korean Vacuum Society
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• v.11 no.1
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• pp.1-7
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• 2002

We deposited $Ba_{0.5}Sr_{0.5}TiO_3$(BST) thin-films on Pt/Ti/$SiO_2$/Si substrates using RF magnetron sputtering method. A Substrate temperature was fixed at room temperature, while working gas flow ratio and RF Power were changed from 90:10 to 60:40 and 50 W, 75 W respectively. Also after BST thin films were deposited, we performed annealing in oxygen atmosphere using Rapid Thermal Annealing. For capacitor application we deposited Pt using E-beam evaporator of UHV system. In a structural property study through XRD measurement we found that crystallization depends on annealing rather than working gas ratio or and RF Power. Electrical properties showed relatively superior characteristic on the annealed sample with 50 W of RF Power.

• Journal of Korean Society of Water and Wastewater
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• v.25 no.4
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• pp.527-534
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• 2011

In this research, the photocatalytic degradation of dibenzothiophene (DBT) in $TiO_2$ aqueous suspension has been studied. $TiO_2$ photocatalysts are prepared by a sol-gel method. The dominant anatase-structure on $TiO_2$ particles is observed after calcining the $TiO_2$ gel at $500^{\circ}C$ for 1hr. Photocatalysts with various transition metals (Nd, Pd and Pt) loading are tested to evaluate the effect of transition metal impurities on photodegradation. The photodegradation efficiencies with $TiO_2$ including Pt and Pd are higher than pure $TiO_2$ powder. Also we investigated the applicability of $H_2O_2$ to increase the efficiency of the $TiO_2$ photocatalytic degradation of dibenzothiophene. The degradation efficiency increases with increasing dosage of $H_2O_2$ in the range of 0.01M to 0.1M . The effect of pH is investigated; we obtained the maximum photodegradation efficiency at pH 5. In addition, the intermediate analysis found dihydroxyl -dibenzothiophene as a reaction intermediate of dibenzothiophene during the photodegradation.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.102.1-102.1
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• 2000

• Proceedings of the Korea Society for Energy Engineering kosee Conference
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• 2006.05a
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• pp.256-261
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• 2006