• Journal of the Korean Ceramic Society
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• v.37 no.12
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• pp.1135-1139
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• 2000

본 연구에서는 Pt/Sn $O_2$박막의 CO 감지특성을 향상시키기 위하여 표면 형상을 제어하였다. Pt/Sn $O_2$계 박막센서의 최적 동작온도는 175$^{\circ}C$이었다. Pt가 12초 동안 증착된 Sn $O_2$가 200ppm의 CO 가스에 대하여 1.23의 최대감도를 나타내었고, 그 이상의 Pt 증착시간 증가에 따라 Sn $O_2$위의 Pt의 coverage가 증가하여 센서의 감도를 감소시켰다. 다층박막(multi-layer thin film)의 단층의 Pt/Sn $O_2$복합체 위에 다시 Sn $O_2$및 Pt의 cluster 층들을 연속적으로 증착함으로서 제작되었다. 단지 하나의 Pt 층만을 증착한 Sn $O_2$막보다 다층의 Pt/Sn $O_2$막이 더욱 우수한 감도( $R_{air}$/ $R_{co}$=1.72, CO: 200 ppm)를 나타내었다. Pt/Sn $O_2$다층박막의 우수한 감도의 원인은 Pt와 Sn $O_2$사이의 계면적 증대 때문인 것으로 생각되어 진다.다.

• The Korean Journal of Ceramics
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• v.6 no.3
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• pp.315-317
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• 2000

A magnetoplumbite type of Ba ferrite(BaM) layers were deposited on Pt(111) and Pt(200) layers, and their c-axis orientation and magnetic characteristics were compared each other. The as-deposited BaM layer on Pt(111) one at the substrate temperature $T_s$ above $500^{\circ}C$ revealed remarkable c-axis orientation. The saturation magnetization 4$\piM_s$ and the perpendicular coercivity $H_{c⊥}$ of the films as-deposited at $T_s$ of $600^{\circ}C$ were 4.0kG and 2.5kOe, respectively. On the other hand, BaM ferrite layer deposited on Pt(200) layer at $T_s$ as relatively low as $500^{\circ}C$ also revealed weak c-axis orientation as well as (107) one and the films as-deposited at $T_s$ of $600^{\circ}C$ exhibited 4$\piMs_{and}$ $H_{c⊥}$ of 2.8kG and 2.5kOe, respectively. It was suggested that although chemical activity of Pt surface was effective for the formation of BaM crystallites, the lattice matching was also important for obtaining BaM layer with good c-axis orientation and large perpendicular anisotropy.sotropy.

• Journal of Energy Engineering
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• v.1 no.1
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• pp.58-65
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• 1992

Pt loaded porous carbon Pt/C electrode was prepared by hot pressing process to enhance the electrode performance in PAFC (phosphoric acid fuel cell). By changing the hot pressing conditions and PTFE contents, Pt/C electrodes were prepared and the electrochemical characteristics of oxygen reduction and unit-cell performance were evaluated. The optimum condition of hot press to make electrode is 360$^{\circ}C$ and 10 kg/$\textrm{cm}^2$. Maximum performance was obtained at 30 wt% PTFE content in the catalyst layer with 80% utilization of platinum clusters. Unit-cell performance of hot pressed Pt/C electrode was 200 mA/$\textrm{cm}^2$ at 700 ㎷ and stable performance was maintained more than 200 hr.

• Korean Journal of Materials Research
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• v.17 no.5
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• pp.283-288
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• 2007

This study aimed to investigate the effects of the seed layer with copper electroplating on the surface morphology of copper foil. Three kinds of seed metal such as platinum, palladium, Pt-Pd alloy were used in this study. Electrodeposition was carried out with the constant current density of 200 $mA/cm^2$ for 68 seconds. Electrochemical experiments, in conjunction with SEM, XRD, AFM and four-point probe, were performed to characterize the morphology and mechanical characteristics of copper foil. Large particles were observed on the surface of the copper deposition layer when a copper foil was electroplated on the 130 nm thickness of Pd, Pt-Pd seed layer. However, a homogeneous surface, low resistivity was obtained when the 260 nm thickness of Pt, Pt-Pd alloy seed layer was used. The minimum value of resistivity was 2.216 ${\mu}{\Omega}-cm$ at the 260 nm thickness of Pt-Pd seed layer.

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.352-362
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• 2000

In this study, effects of novel VMn underlayer on magnetic properties of CoCrPt/VMn longitudinal medium was studied and compared with those of CoCrPt/Cr medium. It was found that the VMn film had (200) preferred orientation and the lattice constant was about 0.2967 nm, which is slightly larger than that of the Cr, 0.2888 nm. The grain size of VMn film was 9.3 nm at 30 nm thickness, and this is about 38 % smaller than that of a similarly deposited Cr film. The CoCrPt/VMn films showed higher coercivity in comparison with the CoCrPt/Cr films. The coercivity increase seems to be attributed to the increased Co (11.0) texture, improved lattice matching between Co (11.0) and VMn (200), and lower stacking fault density. Mn must have diffused into the CoCrPt magnetic layer more uniformly rather than preferentially along grain boundaries this reduced Ms at higher substrate temperature

• Journal of Magnetics
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• v.5 no.4
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• pp.143-146
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• 2000

In this study, the magnetic properties of CoCrPt films (far longditudinal recording) on a novel VMn underlayer were measured and compared with similar films on conventional Cr underlayers. It was found that the VMn film had (200) preferred orientation and the lattice constant was about 0.2967 nm, which is slightly larger than that of the Cr film, 0.2888 m. The grain size of the VMn film was 9.8 nm at 30 m thickness, about 39% smaller than that of a similarly deposited Cr. The CoCrPt/VMn films showed higher coercivity in comparison with the CoCrPt/Cr films. The coercivity increase is attributed to the increased Co (11.0) texture, improved lattice matching between Co (11.0) and VMn (200), and lower stacking fault density. V or Mn must have diffused into the CoCrPt magnetic layer uniformly rather than preferentially along grain boundaries. This reduced Ms at higher substrate temperature.

• Journal of the Korean Ceramic Society
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• v.42 no.2 s.273
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• pp.104-109
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• 2005

To study the role of PbO as the buffer layer, Pt/PZT/PbO/Si with the MFIS structure was deposited on the p-type (100) Si substrate by the r.f. magnetron sputtering with $Pb_{1.1}Zr_{0.53}Ti_{0.47}O_3$ and PbO targets. When PbO buffer layer was inserted between the PZT thin film and the Si substrate, the crystallization of the PZT thin films was considerably improved and the processing temperature was lowered. From the result of an X-ray Photoelectron Spectroscopy (XPS) depth profile result, we could confirm that the substrate temperature for the layer of PbO affects the chemical states of the interface between the PbO buffer layer and the Si substrate, which results in the inter-diffusion of Pb. The MFIS with the PbO buffer layer show the improved electric properties including the high memory window and low leakage current density. In particular, the maximum value of the memory window is 2.0V under the applied voltage of 9V for the Pt/PZT(200 nm, $400^{\circ}C)/PbO(80 nm)/Si$ structures with the PbO buffer layer deposited at the substrate temperature of $300^{\circ}C$.

• Journal of Sensor Science and Technology
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• v.6 no.5
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• pp.400-406
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• 1997

The electrical and physical characteristics of aluminum oxide and Pt thin films on it, deposited by reactive sputtering and DC magnetron sputtering, respectively, were analyzed with increasing annealing temperature($400{\sim}800^{\circ}C$) by four point probe, SEM and XRD. Under $600^{\circ}C$ of annealing temperature, aluminum oxide had the properties of improving Pt adhesion to $SiO_{2}$ and insulation without chemical reaction to Pt thin films and the resistivity of Pt thin films was improved. But these properties of aluminum oxide and Pt thin films on it were degraded over $700^{\circ}C$ of annealing temperature because aluminum oxide was changed into metal aluminum and then reacted to Pt thin films deposited on it. The thermal characteristics of Pt micro heater were analyzed with Pt-RTD integrated on the same substrate. In the analysis of properties of Pt micro heater, active area was smaller size, Pt micro heater had better thermal characteristics. The temperature of Pt micro heater with active area, $200{\mu}m{\times}200{\mu}m$ was up to $400^{\circ}C$ with 1.5watts of the heating power.

• Journal of the Korean Magnetics Society
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• v.11 no.2
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• pp.72-77
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• 2001

Top spin valve films with PtMn antiferromagnetic layers were deposited using a multi-target dc magnetron sputtering in (100)Si substrates overcoated with 500 $\AA$ of Al$_2$O$_3$. Firstly, the post-deposition annealing was performed at 270$\^{C}$ in a unidirectional magnetic field of 3 kOe to induce the crystallographic transformation of the PtMn layer from a fcc (111) to a fct (111) structure. Secondly, the spin valve films were annealed without magnetic fields and magnetic properties were measured. In Si/A1$_2$O$_3$ (500$\AA$)/Ta(50$\AA$)NiFe(40$\AA$)/CoFe(17$\AA$)/Cu(28$\AA$)/CoFe (30$\AA$)PtMn(200$\AA$)Ta(50$\AA$) top spin valve samples, the MR ratio decreased slowly with increasing annealing temperature up to 325$\^{C}$. But above 325$\^{C}$, the MR ratio decreased rapidly to 1%, due to a collapse of the exchange coupling between a antiferromagnetic layer and a pinned layer with increasing annealing temperature. Also above 325$\^{C}$, the exchange biased field rapidly decreased and the interlayer coupling field rapidly increased with increasing annealing temperature. A change in the interlayer coupling field was resulted from the increase in interface roughness due to Mn-interdiffusion through the grain boundaries. We confirmed the temperature in changing magnetic properties agreed well with the blocking temperature of PtMn based spin valve structure.

• Korean Chemical Engineering Research
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• v.46 no.4
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• pp.697-700
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• 2008

The underpotential deposited Bi on Pt($Bi_{upd}/Pt$) anode for formic acid fuel cells (FAFCs) was developed using multi-layered preparation method for better electrocatalytic utilization of Pt. The electron probe microanalysis (EPMA) result indicated that $Bi_{upd}$ remains through the catalyst layer during stability test. In performance test, the multilayered $Bi_{upd}$ on Pt black showed superior performance by approximately 200 mV at current density of $150mA/cm^2$ compared with PtRu black anode catalyst. Based on preparation condition of $Bi_{upd}/Pt$ black, carbon supported $Bi_{upd}/Pt/C$ electrode was prepared and it showed enhanced performance and stability.