• 한국전기전자재료학회논문지
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• 제11권2호
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• pp.133-137
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• 1998

$(Pb_{0.72}La_{0.28})Ti_{0.93}O_3(PLT(28))$ thin films were fabricated by pulsed laser deposition. PLT films deposited on $Pt/Ti/SiO_2/Si$ at $600^{\circ}C$ had a preferred orientation in (111) plane and at $550^{\circ}C$ had a (100) preferred orientation. We found that (111) preferred oriented films had well grown normal to substrate surface. This PLT(28) thin films of $1{\mu}m$ thickness had dielectric properties of ${\varepsilon}_r$=1300, dielectric $loss{\fallingdotseq}0.03 $. and had charge storage density of 10 [${\mu}C/cm^2$] and leakage current density of less than $10^{-6}[A/cm^2]$ at 100[kV/cm]. These results indicated that the PLT(28) thin films fabricated by pulsed laser deposition are suitable for DRAM capacitor application.

• 한국세라믹학회지
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• 제34권10호
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• pp.1021-1026
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• 1997

RuO2 thin film has reasonably good conductivity and stiffness and it is thought to substitute for the cantilever beam made up of Pt and Si3N4 double layers in microactuators. Therefore, anisotopic Si etching was performed using RuO2 thin film as a mask layer in 25 wt. % TMAH water solution. In the etching temperature ranging from 6$0^{\circ}C$ to 75$^{\circ}C$, the etch rates of all the crystallographic directions increased linearly as the etching temperature increased. The etch rate ratio(selectivity) of [111]/[100] which varied from 0.08 to 0.14, was not sensitive to temperature. The activation energies for [110] direction, [100] direction and [111] direction were 0.50, 0.66 and 1.04eV, respectively. RuO2 cantilever beam with a clean surface was formed at the etching temperatures of 6$0^{\circ}C$ and $65^{\circ}C$. But the damages due to formation of pin holes on RuO2 surface were observed beyond 7$0^{\circ}C$. The tensile stress of RuO2 thin films caused the cantilever bending upward. As a result, it was demonstrated that the formation of conducting oxide RuO2 cantilever beam which can replace the role of an electrode and supporting layer could be possible by TMAH solution.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.192-195
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• 2003

There has been increasing interest in the applications of synthesized molecules of nanometer scale in recent years due to their potential utilization in various fields such as biology, optoelectronics and molecular electronics. In this study, the terpyridine-platinum (II) complex on the periphery of the dendritic carbosilane has been prepared from the reaction of Pt(COD)Cl2 and the 4'-functionalized-(2,2':6',2"-terpyridine) on dendrimers. The self-assembly process was carried out to obtain indivially dispersed dendrimer on Au (111) substrate. It was found that STM was unsuitable to obtain a obvious image of dendrimers. Tapping-mode atomic force microscopy(AFM) has been used to investigate the shape and size of dendrimers individually dispersed on Au (111)substrate. As a result, the imaged single dendrimer show that dendrimer is dome shaped and its size can be measured by tapping-mode AFM.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.60-60
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• 2015

Nanosheets of graphene and related 2D materials have attracted much attention due to excellent physical, chemical and mechanical properties. Single-layer graphene (SLG) was first synthesized by Blakely et al in 1974 [1]. Following his achievements, we initiated the growth and characterization of graphene and h-BN on metal substrates using surface segregation and precipitation in 1980s [2,3]. There are three important steps for nanosheet growth; surface segregation of dopants, surface reaction for monolayer phase, and subsequent 3-D growth (surface precipitation). Surface phase transition was clearly demonstrated on C-doped Ni(111) by in situ XPS at elevated temperatures [4]. The growth mode was clarified by inelastic background analysis [5]. The surface segregation approach has been applied to C-doped Pt(111) and Pd(111), and controllable growth of SLG has been demonstrated successfully [6]. Recently we proposed a promising method for producing SLG fully covering an entire substrate using Ni films deposited on graphite substrates [7]. A universal method for layer counting has been proposed [8]. In this paper, we will focus on the effect of competitive surface-site occupation between carbon and other surface-active impurities on the graphene growth. It is known that S is a typical impurity of metals and the most surface-active element. The surface sites shall be occupied by S through surface segregation. In the case of Ni(110), it is confirmed by AES and STM that the available surface sites is nearly occupied by S with a centered $2{\times}2$ arrangement. When Ni(110) is doped with C, surface segregation of C may be interfered by surface active elements like S. In this case, nanoscopic characterization has discovered a preferred directional growth of SLG, exhibiting a square-like shape (Fig. 1). Also the detailed characterization methodologies for graphene and h-BN nanosheets, including AFM, STM, KPFM, AES, HIM and XPS shall be discussed.

• Journal of Chest Surgery
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• 제29권9호
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• pp.971-976
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• 1996

경북대학교 병원에서는 1988년 3월부터 1992년 10월까지 연속적인 166명의 환자(평균 나이 38세, 남녀 성비 66 대 100)에게 201개 (승모판 150개, 대동맥판 50개, 삼천판 1개)의 CarboMedics 인공 판막을 이식하였다. 전체 추적 기간은 6646환자-월(평균40개월)이었고, 추적율은 96%였다. 술전에 124명 이 뉴욕 심장병학회 기능 분류 )기와 4기에 속하였고, 술후에는 164명 (98.7 %)이 1기와 2기에 속하였다. 병원 사망은 4.2%였고, 만기 사망도 4.2%였다. 전체 집단에서 생존율의 중간값인 77개월까지의 생존율은 89.4 %였다. 판막 관련 사망, 인공 판막의 혈전, 항응고요법에 따른 출혈, 비구조적 기능 이상, 재수술등의 linearized incidence는 환자-연당 각각 0.72%, 0.18%, 0.18%, 0.18%, 0.36%였다. 77개월까지 판막 관련 사망이 없을 율은 94.9%, 인공 판막의 혈전이 없을 율은 99.4%, 항응고요법에 따른 출혈이 없을 율은 99.4%, 비구조적 기능 이상이 없을 율은 98.6%, 재수술이 필요하지 않을 율은 97.6%였다. 77개월까지 병원 사망을 포함한 모든 판막 관련 합병증과 사망이 없을 율은 90.9 %였다. 이상의 결과에서 CarboMedics 판막은 판막에 관련된 합병증이 적었고, 구조적 이상은 없어서 중단기 추적 조사 결과는 만족스러우며, 향후 장기 추적 검사를 요한다.

• 한국세라믹학회지
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• 제31권8호
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• pp.886-892
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• 1994

Structural and electrical properties of BaTiO3 thin films deposited on Pt/SiO2/Si substrates by RF magnetron sputtering method have been investigated. Crystallization behavior and electrical properties were studied for the films deposited under various sputtering gas compositions (Ar+O2 gas mixture) and substrate temperatures. All the films deposited above 50$0^{\circ}C$ were all crystallized and their preferred orientation changed from (001) to (111) with the addition of oxygen gas. The dielectric constant of films deposited in pure argon was about 110 and showed little dependence on the substrate temperature. But that was increased as the ratio of O2/Ar increased and its substrate temperature dependence was discernible. The highest dielectric constant reached to 550. In addition, the films deposited in mixed gas showed stable dielectric properties against the frequency and temperature.

• 한국세라믹학회지
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• 제32권4호
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• pp.441-447
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• 1995

Ba0.65Sr0.35TiO3 (BST) thin films were deposited on Pt/SiO2/Si(100) substrate by rf magnetron sputtering. The substrate temperature changed from 35$0^{\circ}C$ to 55$0^{\circ}C$ and crystalline BST thin films were deposited above 45$0^{\circ}C$. Most of the films had (111) preferred orientation regardless of deposition temperature, but the films changed to (100) preferred orientation as gas pressure increased. The dielectric constant increased with increasing substrate temperature and film thickness, and ranged from 100 to 600 at room temperature. The leakage current increased as substrate temperature increased or as film thickness decreased.

• 한국세라믹학회지
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• 제43권7호
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• pp.389-392
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• 2006

Electric field-induced phase transition from the tetragonal to rhombohedral phase was investigated for the <111> direction in tetragonal PZN-PT single crystals, which have spontaneous polarization along the <001> direction. From the strain and dielectric data, it was confirmed that the samples followed a tetragonal-orthorhombic-rhombohedral phase transition sequence with application of an electric field. This transition is different from the rhombohedral-tetragonal phase transition of <001> rhombohedral composition single crystals, in which a phase transition occurred without showing the intermediate orthorhombic phase.

• 한국진공학회지
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• 제12권S1호
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• pp.17-20
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• 2003

We have studied magnetic and structural properties of ultrathin Ni films grown on PI(lII) surface using in situ surface magneto-optic Kerr effect and X-ray photoelectron spectroscopy. Perpendicular magnetic anisotropy was absent, and longitudinal Kerr signal was only detectable for Ni films thicker than 6 monolayers. Enhancement in longitudinal Kerr signal by 30% was achieved by post-annealing at temperatures below 800K, but upon annealing at 820K, surface alloy was formed. By using core-level binding-energy shifts, the composition was determined to be Ni 70 at. %.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.11-12
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• 2005

[ $Pb(Zr_{0.48}Ti_{0.52})O_3$ ] (PZT) thin films were deposited on Pt(111)/Ti/$SiO_2$/Si substrates by pulsed laser deposition. In order to study the effect of different laser pulse repetition rate on the dielectric and ferroelectric properties of PZT thin films,2 Hz and 5 Hz of laser pulse repetition rate were selected. We compared the results of XRD pattern, dielectric constant and hysteresis characteristics. From the experimental data, we found that the electrical properties of PZT thin films which grown ar 2 Hz of laser pulse repetition rate were better than those which grown at 5 Hz of laser pulse repetition rate.