• Title/Summary/Keyword: Protection film

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Quench recovery characteristics of YBCO thin film type superconducting fault current limiter (YBCO 박막형 초전도 한류소자의 퀜치 회복 특성에 관한 연구)

  • Yim, Seong-Woo;Sim, Jung-Wook;Kim, Hye-Rim;Hyun, Ok-Bae;Kim, Ho-Min;Park, Kwon-Bae;Lee, Bang-Wook;Oh, Il-Sung
    • Proceedings of the KIEE Conference
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    • 2006.07b
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    • pp.711-712
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    • 2006
  • For the application of superconducting fault current limiters(SFCLs) to the protection system, quench recovery characteristics of Au/YBCO thin film were investigated. The Au/YBCO thin film was designed as a SFCL element with a bi-spiral pattern. The SFCL element limited the fault current successfully. For the analysis of the recovery to superconducting state, we measured resistance variation of the SFCL element after the quench. In addition, in order to investigate the dependence of quench characteristics of SFCL on the $LN_2$ cooling condition, we measured the recovery time under a pressure of 1, 2 and 3 atm. As the results, the recovery time increased in proportion to the duration of the fault currents. In the sub-cooled condition, while the quench development was exactly the same, the recovery time was shortened as the pressure increased.

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A Study on Immorality in the Transition of Film Censorship and Rating System in Korea (한국영화 검열과 등급분류 제도 변천사에 담긴 비윤리성 탐구)

  • CHUNG, Sujin
    • Trans-
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    • v.2
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    • pp.39-58
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    • 2017
  • This essay aims to examine Korean motion picture policy on the government censorship system from Jacques Derrida's thought associated with sense of ethics. Korean motion picture policy has focused on protection of domestic films to achieve a national goal from military dictatorship regime, so-called people unification or social stability. It also aimed to spread propaganda for despotic government. Thus, the government keeps tight control over all motion picture policy. It restricts not only freedom of choosing movies but also creativity from artist. Derrida used to talk about the justice and violence law. Derrida's thought is connected with the ethical consideration. This research concerned about the violence within film censorship policy of Korean government and explore possibilities of ethical censorship policy from Derrida's perspectives.

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Mechanical Stability Evaluation of Thin Film with Spin-coater (스핀코터를 이용한 박막의 기계적 안정성 평가)

  • Kim, Ji Eun;Kim, Jung Hwan;Hong, Seongchul;Cho, HanKu;Ahn, Jinho
    • Journal of the Semiconductor & Display Technology
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    • v.15 no.1
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    • pp.6-11
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    • 2016
  • For high volume manufacturing using extreme ultraviolet (EUV) lithography, mask protection from contamination during lithography process must be solved, and EUV pellicle is the strongest solution. Based on the technical requirements of EUV pellicle, EUV pellicle should have large membrane area ($110{\times}140mm^2$) with film transmittance over 90% and mechanical stability. Even though pellicle that satisfies size standard with high transmittance has been reported, its mechanical stability has not been confirmed, nor is there a standard to evaluate the mechanical stability. In this study, we suggest a rather simple method evaluating mechanical stability of pellicle membrane using spin-coater which can emulate the linear accelerated motion. The test conditions were designed by simulating the acceleration distribution inside pellicle membrane through correlating the linear acceleration and centripetal acceleration, which occurs during linear movement and rotation movement, respectively. By these simulation results, we confirmed the possibility of using spin-coater to evaluate the mechanical stability of EUV pellicle.

Corrosion Protection of Plasma-Polymerized Cyclohexane Films Deposited on Copper

  • Park, Z.T.;Lee, J.H.;Choi, Y.S.;Ahn, S.H.;Kim, J.G.;Cho, S.H.;Boo, J.H.
    • Journal of the Korean institute of surface engineering
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    • v.36 no.1
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    • pp.74-78
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    • 2003
  • The corrosion failure of electronic devices has been a major reliability concern lately. This failure is an ongoing concern because of miniaturization of integrated circuits (IC) and the increased use of polymers in electronic packaging. Recently, plasma-polymerized cyclohexane films were considered as a possible candidate for a interlayer dielectric for multilever metallization of ultra large scale integrated (ULSI) semiconductor devices. In this paper the protective ability of above films as a function of deposition temperature and RF power in an 3.5 wt.% NaCl solution were examined by polarization measurement. The film was characterized by FTIR spectroscopy and contact angle measurement. The protective efficiency of the film increased with increasing deposition temperature and RF power, which induced the higher degree of cross-linking and hydrophobicity of the films.

Development of chemical conversion coating technology by environment friendly method for Zn electroplated steel (아연 전기 도금 강의 환경친화적인 화성처리 기술 개발)

  • Kim, Seong-Jong;Kim, Jeong-Il;Jang, Seok-Ki
    • Proceedings of the Korean Society of Marine Engineers Conference
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    • 2006.06a
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    • pp.271-272
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    • 2006
  • Zinc confers high corrosion resistance by acting as a sacrificial anode, and a zinc coating improves the appearance of steel. Chromate conversion coating (CCC) films are still one of the most efficient surface treatments for steel. Although such films can self-repair via the dissolution of Cr(VI), dissolved Cr(VI) have adverse effects on humans, and the environment. Therefore, we examined the corrosion protection property and morphology of colloidal silica conversion films as an alternative to CCC films. The corrosion behavior was investigated in 3% NaCl solution using electrochemical techniques, including electrochemical impedance spectroscopy, open circuit potential, and the salt spray test(SST). Corrosion was implied by the appearance of red rust on the specimen surface. In corrosion resistance at 3% NaCl solution, red rust appeared at 15-20, 55-70, and 83-98 days on Zn-electroplated steel, colloidal silica conversion-coated specimens, and CCC-coated specimens, respectively. In the salt spray test, the colloidal silica film provided better corrosion protection than CCC films, i.e., red rust appeared at 96 hours on the Zn-electroplated steel sheet, at 432 hours with the CCC films, and at 888 hours with silica conversion coating.

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The study on MgO formation for AC PDP prepared by R.F. reactive magnetron Sputtering (반응성 R.F. 스퍼트링에 의한 AC PDP 용 MgO형성에 관한 연구)

  • Ha, H.J.;Lee, W.G.;Nam, S.O.;Ha, S.C.;Cho, J.S.;Park, C.H.
    • Proceedings of the KIEE Conference
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    • 1996.07c
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    • pp.1576-1578
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    • 1996
  • MgO protection layer in ac PDP prevents the dielectric layer from sputtering of ion in discharge plasma in addition to the contribution to the memory function and also have the additional important roll in lowering the firing Voltage due to a large secondary electron emission yield(${\gamma}$). The methode of Sputtering are easy to apply on mass production and to enlarge the size of the panel and are known to have the superior Adhesion and Uniformity of thin film. MgO protection layer of $1000{\AA}$ on dielectric layer by Reactive R.F magnetron sputtering is formed. Discharge characteristics have done with the formation of protection layer.

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Channel Protection Layer Effect on the Performance of Oxide TFTs

  • KoPark, Sang-Hee;Cho, Doo-Hee;Hwang, Chi-Sun;Yang, Shin-Hyuk;Ryu, Min-Ki;Byun, Chun-Won;Yoon, Sung-Min;Cheong, Woo-Seok;Cho, Kyoung-Ik;Jeon, Jae-Hong
    • ETRI Journal
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    • v.31 no.6
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    • pp.653-659
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    • 2009
  • We have investigated the channel protection layer (PL) effect on the performance of an oxide thin film transistor (TFT) with a staggered top gate ZnO TFT and Al-doped zinc tin oxide (AZTO) TFT. Deposition of an ultra-thin PL on oxide semiconductor films enables TFTs to behave well by protecting the channel from a photo-resist (PR) stripper which removes the depleted surface of the active layer and increases the carrier amount in the channel. In addition, adopting a PL prevents channel contamination from the organic PR and results in high mobility and small subthreshold swings. The PL process plays a critical role in the performance of oxide TFTs. When a plasma process is introduced on the surface of an active layer during the PL process, and as the plasma power is increased, the TFT characteristics degrade, resulting in lower mobility and higher threshold voltage. Therefore, it is very important to form an interface using a minimized plasma process.

Establishing Plan for Non-governmental Film Classification System (민간자율 영화등급분류제도 도입방안)

  • Yang, Young-Chul
    • The Journal of the Korea Contents Association
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    • v.14 no.12
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    • pp.598-606
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    • 2014
  • While the United States and Japan have non-government film rating system, Korea and France are still maintaining governmental control process. But the restrict showing rate in Korea does possibly violate the Constitution with no theatre for the movies of that rate right now. No other visual media including broadcasting have any outer classification process before their showing. So we need to improve our system by replacing it with non-governmental system. To establish independent non-government rating system, first of all, the major companies of film industry should get together to set up Korean Classification and Rating Association, to support the Film Rating Board. The most important thing is that the board operates independently. Government can support art cinemas financially with rating fee. Juvenile protection groups have to keep watch on the process of the board going fairly as well. The chief obstacle for non-governmental rating system is the fact that major companies don't want to get it. But continuing efforts to find any rational way is worthy enough.

Application of Si3N4 Thin Film as a Humidity Protection Layer for Organic Light Emitting Diode (Si3N4 박막의 유기발광소자 수분침투 방지막으로의 응용)

  • Kim, Chang-Jo;Shin, Paik-Kyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.5
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    • pp.397-402
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    • 2010
  • In this paper, we studied WVTR(water vapor transmission rate) properties of $Si_3N_4$ thin film that was deposited using TCP-CVD (transformer coupled plasma chemical vapor deposition) method for the possibility of OLED(organic light emitting diode) encapsulation. Considering the conventional OLED processing temperature limit of below $80^{\circ}C$, the $Si_3N_4$ thin films were deposited at room temperature. The $Si_3N_4$ thin films were prepared with the process conditions: $SiH_4$ and $N_2$, as reactive gases; working pressure below 15 mTorr; RF power for TCP below 500 W. Through MOCON test for WVTR, we analyzed water vapor permeation per day. We obtained that WVTR property below 6~0.05 gm/$m^2$/day at process conditions. The best preparation condition for $Si_3N_4$ thin film to get the best WVTR property of 0.05 gm/$m^2$/day were $SiH_4:N_2$ gas flow rate of 10:200 sccm, working pressure of 10 mTorr, working distance of 70 mm, TCP power of 500 W and film thickness of 200 nm. respectively. The proposed results indicates that the $Si_3N_4$ thin film could replace metal or glass as encapsulation for flexible OLED.

Characterization of Thin Film Passivation for OLED by PECVD (PECVD에 의한 OLED 소자의 Thin Film Passivation 특성)

  • Kim, KwanDo;Jang, SeokHee;Kim, JongMin;Chang, SangMok
    • Korean Chemical Engineering Research
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    • v.50 no.3
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    • pp.574-581
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    • 2012
  • The relatively short lifetime is a major obstruction for the commercial applications of OLED. One of the reason for the short lifetime is that the organic materials are interacted with water or oxygen in the atmosphere. Protection of water or oxygen from diffusing into the organic material layers are necessary to increase the lifetime of OLED. Although encapsulation of OLED with glass or metal cans has been established, passivation methods of OLED by organic/inorganic thin films are still being developed. In this paper we have developed in-situ passivation system and thin film passivation method using PECVD by which deposition can be performed at room temperature. We have analyzed the characteristics of the passivated OLED device also. The WVTR (Water Vapor Transmission Rate) for the inorganic thin film mono-layer can be reached down to $1{\times}10^{-2}g/m^2{\cdot}day$ and improved lifetime can be obtained. Thin film passivation methods are expected to be applied to flexible display.