• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.21 no.8
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• pp.752-760
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• 2011

In tilting pad bearing design process, the selection of the proper configuration type of either a load-between-pad(LBP) or load-on-pad(LOP) as well as preload and pivot offset conditions is to be carefully considered. Also the bearing needs to be designed in order to be suited for the rotor-bearing system and operating condition. In this paper, it is observed that the dynamic characteristics in a five pad tilting pad bearing for the LBP and the LOP configurations are influenced by the variation of preload and pivot offset. In this context, rotor dynamic analysis of the 5 MW industrial gas turbine supported by the tilting pad bearing at the front and roller bearing at the rear is carried out based on the dynamic coefficients of the tilting pad bearing investigated. The result shows that two rigid body critical modes experience various changes according to the influence of the tilting pad bearing uniquely applied to one side of this machine. Mainly, the second critical speed, the rigid body mode of conical shape with high whirling in the tilting pad bearing, is significantly changed by preload and pivot offset regardless of the LBP and LOP configurations. And, the first critical mode, the rigid body mode of conical shape with high whirling in the roller bearing, is sensitively affected by preload applied to the LOP configuration and by its asymmetric dynamic properties.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2011.04a
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• pp.425-432
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• 2011

In tilting pad bearing design process, the selection of the proper configuration type of either a Load-Between-Pad (LBP) or Load-On-Pad (LOP) as well as preload and pivot offset conditions is to be carefully considered. Also the bearing needs to be designed in order to be suited for the rotor-bearing system and operating condition. In this paper, it is observed that the dynamic characteristics in a 5 pad tilting pad bearing for the LBP and the LOP configurations are influenced by the variation of preload and pivot offset. In this context, rotor dynamic analysis of the 5MW industrial gas turbine supported by the tilting pad bearing at the front and roller bearing at the rear is carried out based on the dynamic coefficients of the tilting pad bearing investigated. The result shows that two rigid body critical modes experience various changes according to the influence of the tilting pad bearing uniquely applied to one side of this machine. Mainly, the second critical speed, the rigid body mode of conical shape with high whirling in the tilting pad bearing, is significantly changed by preload and pivot offset regardless of the LBP and LOP configurations. And, the first critical mode, the rigid body mode of conical shape with high whirling in the roller bearing, is sensitively affected by preload applied to the LOP configuration and by the its asymmetric dynamic properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.168-171
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• 2002

A SSIMT(Suppressed Sidewall Injection Magnetotransistor) sensor with high linearity is presented in this thesis. The prototype is fabricated by using the Hynix 0.6$\mu\textrm{m}$ P-substrate twin-well double poly three-metal CMOS Process. The fabricated SSIMT shows that variation of the collector current is extremely linear by varing the magnetic induction from -200mT to 200mT at I$\_$B/=500${\mu}$A, V$\_$CE/=2V and V$\_$SUB/=5V. The relative sensitivity is up to 120%/T. At B = 0, magnetic offset is about 79mT, there relative sensitivity is 30.5%/T. The nonlinearity of the fabricated SSIMT is measured about 1.4%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.443-446
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• 2003

A 2-Dimensional SSIMT(Suppressed Sidewall Injection Magnetotransistor) sensor with high linearity is presented in this paper. The prototype is fabricated by using the Hynix $0.6{\mu}m$ CMOS Process. The fabricated SSIMT shows that the variation of each collectors current are extremely linear by varing the magnetic induction from -200mT to 200mT at $I_B\;:\;1000{\mu}A,\;V_{CE}\;=\;5V\;and\;V_{SUB}\;=\;5V$. The relative sensitivity is up to 13%/T. At B = 0, magnetic offset is about 40mT, there relative sensitivity is 4.72%/T. The nonlinearity of the fabricated 2-D SSIMT is measured about 1.2%.

• ETRI Journal
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• v.31 no.6
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• pp.755-764
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• 2009

This paper presents a switched self-biasing and a tail current-shaping technique to suppress the 1/f noise from a tail current source in differential cross-coupled inductance-capacitance (LC) voltage-controlled oscillators (VCOs). The proposed LC VCO has an amplitude control characteristic due to the creation of negative feedback for the oscillation waveform amplitude. It is fabricated using a 0.13 ${\mu}m$ CMOS process. The measured phase noise is -117 dBc/Hz at a 1 MHz offset from a 4.85 GHz carrier frequency, while it draws 6.5 mA from a 0.6 V supply voltage. For frequency tuning, process variation, and temperature change, the amplitude change rate of the oscillation waveform in the proposed VCO is 2.1 to 3.2 times smaller than that of an existing VCO with a fixed bias. The measured amplitude change rate of the oscillation waveform for frequency tuning from 4.55 GHz to 5.04 GHz is 131 pV/Hz.

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.131-145
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• 1992

This paper has been described a process technology for the fabrication of Si-on-insulator(SOI) transducers and circuits. The technology utilizes Si-wafer direct bonding(SDB) and mechanical-chemical(M-C) local polishing to create a SOI structure with a high-qualify, uniformly thin layer of single-crystal Si. The electrical and piezoresistive properties of the resultant thin SOI films have been investigated by SOI MOSFET's and cantilever beams, and confirmed comparable to those of bulk Si. Two kinds of pressure transducers using a SOI structure have been proposed. The shifts in sensitivity and offset voltage of the implemented pressure transducers using interfacial $SiO_{2}$ films as the dielectrical isolation layer of piezoresistors were less than -0.2% and +0.15%, respectively, in the temperature range from $-20^{\circ}C$ to $+350^{\circ}C$. In the case of pressure transducers using interfacial $SiO_{2}$ films as an etch-stop layer during the fabrication of thin Si membranes, the pressure sensitivity variation can be controlled to within a standard deviation of ${\pm}2.3%$ from wafer to wafer. From these results, the developed SDB process and the resultant SOI films will offer significant advantages in the fabrication of integrated microtransducers and circuits.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.12
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• pp.2246-2253
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• 2011

This paper presents the error correction method of magnetic position sensor using recursive least square method (RLSM) with forgetting factor. Magnetic position sensor is proposed for linear position detection of the linear motor which has tooth shape stator, consists of permanent magnet, iron core and linear hall sensor, and generates sine and cosine waveforms according to the movement of the mover of the linear motor. From the output of magnetic position sensor, the position of the linear motor can be detected using arc-tan function. But the variation of the air gap between magnetic position sensor and the stator and the error in manufacturing process can cause the variation in offset, phase and amplitude of the generated waveforms when the linear motor moves. These variations in sine and cosine waveforms are changed according to the current linear motor position, and it is very difficult to compensate the errors using constant value. In this paper, the generated sine and cosine waveforms from the magnetic position sensor are compensated on-line using the RLSM with forgetting factor. And the speed observer is introduced to reduce the effect of uncompensated harmonic component. The approaches are verified by some simulations and experiments.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.7
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• pp.23-29
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• 1997

The performance degradation of CMOS differential amplifiers due to hot carrier effect has been measured and analyzed. Two-state CMOS amplifiers whose input transistors are PMOSFETs were designed and fabriacted using the ISRC CMOS 1.5.mu.m process. It was observed after the amplifier was hot-carrier stressed that the small-signal voltage gain and the input offset voltage increased and the phase margin decreased. The performance variation results from the increase of the transconductances and gate capacitances of the PMOSFETs used as input transistors in the differential input stage and the output stage and also resulted from the decrease of their output conductances. After long-term stress, the amplifier became unstable. The reason might be that its phase margin was reduced due to hot carrier effect.

• Geophysics and Geophysical Exploration
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• v.14 no.1
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• pp.25-41
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• 2011

AVO analysis was conducted on hydrocarbon-bearing structures by applying the crossplot and offset-coordinate amplitude polynomial techniques. To evaluate the applicability of the AVO analysis, it was conducted on synthetic data that were generated with an anticline model, and field data from the hydrocarbon-bearing Colony Sand bed in Canada. Analysis of synthetic data from the anticline model demonstrates that the crossplot method yields zero-offset reflection amplitude and amplitude variation with negative values for the upper interface of the hydrocarbon-bearing layer. The crossplot values are clustered in the third quadrant. The results of AVO analysis based on the coefficients of the amplitude polynomial are similar to those from the crossplots. These well correlated results of AVO analysis on field and synthetic data suggest that both methods successfully investigate the characteristics of the reflections from the upper interface of a hydrocarbon-bearing layer. Analysis based on the incident-angle equation facilitates the application of various interpretation methods. However, it requires the conversion of seismic data to an incident angle gather. By contrast, analysis using coefficients of the amplitude polynomial is cost-effective because it allows examining amplitude variation with offset without involving the conversion process. However, it warrants further investigation into versatile application. The two different techniques can be complement each other effectively as AVO-analysis tools for the detection of hydrocarbon reservoirs.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.4
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• pp.437-444
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• 2015

A high output power voltage controlled oscillator (VCO) in the U-band was implemented using a 65 nm CMOS process. The proposed VCO used a transmission line to increase output voltage swing and overcome the limitations of CMOS technologies. Two varactor banks were used for fine tuning with a 5% frequency tuning range. The proposed VCO showed small variation in output voltage and operated at 51.55-54.18 GHz. The measured phase noises were -51.53 dBc/Hz, -91.84 dBc/Hz, and -101.07 dBc/Hz at offset frequencies of 10 kHz, 1 MHz, and 10 MHz, respectively, with stable output power. The chip area, including the output buffer, is $0.16{\times}0.16mm^2$ and the maximum output power was -0.11 dBm. The power consumption was 33.4 mW with a supply voltage of 1.2-V. The measured $FOM_P$ was -190.8 dBc/Hz.