• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.151-151
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• 2012

A new plasma process, i.e., the combination of PIII&D and HIPIMS, was developed to implant non-gaseous ions into materials surface. HIPIMS is a special mode of operation of pulsed-DC magnetron sputtering, in which high pulsed DC power exceeding ~1 kW/$cm^2$ of its peak power density is applied to the magnetron sputtering target while the average power density remains manageable to the cooling capacity of the equipment by using a very small duty ratio of operation. Due to the high peak power density applied to the sputtering target, a large fraction of sputtered atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed plasma of sputtered target material by HIPIMS operation, the implantation of non-gaseous ions can be successfully accomplished. The new process has great advantage that thin film deposition and non-gaseous ion implantation along with in-situ film modification can be achieved in a single plasma chamber. Even broader application areas of PIII&D technology are believed to be envisaged by this newly developed process. In one application of non-gaseous plasma immersion ion implantation, Ge ions were implanted into SiO2 thin film at 60 keV to form Ge quantum dots embedded in SiO2 dielectric material. The crystalline Ge quantum dots were shown to be 5~10 nm in size and well dispersed in SiO2 matrix. In another application, Ag ions were implanted into SS-304 substrate to endow the anti-microbial property of the surface. Yet another bio-application was Mg ion implantation into Ti to improve its osteointegration property for bone implants. Catalyst is another promising application field of nongaseous plasma immersion ion implantation because ion implantation results in atomically dispersed catalytic agents with high surface to volume ratio. Pt ions were implanted into the surface of Al2O3 catalytic supporter and its H2 generation property was measured for DME reforming catalyst. In this talk, a newly developed, non-gaseous plasma immersion ion implantation technique and its applications would be shown and discussed.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.59.1-59.1
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• 2010

Aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) is studied with the structure of a glass/Al/$SiO_2$/a-Si, in which the $SiO_2$ layer has micron-sized laser holes in the stack. An oxide layer between aluminum and a-Si thin films plays a significant role in the metal-induced crystallization (MIC) process determining the properties such as grain size and preferential orientation. In our case, the crystallization of a-Si is carried out only through the key hole because the $SiO_2$ layer is substantially thick enough to prevent a-Si from contacting aluminum. The crystal growth is successfully realized toward the only vertical direction, resulting a crystalline silicon grain with a size of $3{\sim}4{\mu}m$ under the hole. Lateral growth seems to be not occurred. For the AIC experiment, the glass/Al/$SiO_2$/a-Si stacks were prepared where an Al layer was deposited on glass substrate by DC sputter, $SiO_2$ and a-Si films by PECVD method, respectively. Prior to the a-Si deposition, a $30{\times}30$ micron-sized hole array with a diameter of $1{\sim}2{\mu}m$ was fabricated utilizing the femtosecond laser pulses to induce the AIC process through the key holes and the prepared workpieces were annealed in a thermal chamber for 2 hours. After heat treatment, the surface morphology, grain size, and crystal orientation of the polycrystalline silicon (pc-Si) film were evaluated by scanning electron microscope, transmission electron microscope, and energy dispersive spectrometer. In conclusion, we observed that the vertical crystal growth was occurred in the case of the crystallization of a-Si with aluminum by the MIC process in a small area. The pc-Si grain grew under the key hole up to a size of $3{\sim}4{\mu}m$ with the workpiece.

• Membrane Journal
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• v.17 no.2
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• pp.99-111
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• 2007

It is impossible to remove toxic organic substances that are recognized as a cancer caused suspicious element in drinking water using the conventional water purification method. This study introduces groundwater into a reaction chamber as an effective amount of water to process this water using a mixed method of AOP oxidation and M/F membrane and purifies it as a desirable level by artificially mixing such toxic substances in order to effectively process the water. Based on this fact, this study configures an optimal operation condition. The VOCs existed in toxic substances was investigated as a term of phenol and toluene, and agricultural chemicals were also investigated as a term of parathion, diazinon and carbaryl. The experiment applied in this study was performed using a single and composite soolution. In the operation condition applied to fully dissolve and remove such substances, the amount of $H_2O_2$ injected in the process was 150 mL of a fixed quantity, the value of pH was configured as $5.5{\sim}6.0$, the temperature was controlled as a range of $12{\sim}16^{\circ}C$, the dissolved amount of ozone was applied more than 5.0 mg/L, the reaction time was determined as an optimal condition, such as $30{\sim}40$ minutes, and the segregation membrane in the same reactor was determined for acquire water drinking of large quantity using a pore size of $0.45{\mu}m$ M/F membrane.

• Mineral and Industry
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• v.26
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• pp.1-12
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• 2013

In this study, an accelerated carbonation process was applied to stabilize hazardous heavy metals of industrial solid waste incineration (ISWI) bottom ash and fly ash, and to reduce $CO_2$ emissions. The most commonly used method to stabilize heavy metals is accelerated carbonation using a high water-to-solid ratio including oxidation and carbonation reactions as well as neutralization of the pH, dissolution, and precipitation and sorption. This process has been recognized as having a significant effect on the leaching of heavy metals in alkaline materials such as ISWI ash. The accelerated carbonation process with $CO_2$ absorption was investigated to confirm the leaching behavior of heavy metals contained in ISWI ash including fly and bottom ash. Only the temperature of the chamber at atmospheric pressure was varied and the $CO_2$ concentration was kept constant at 99% while the water-to-solid ratio (L/S) was set at 0.3 and $3.0dm^3/kg$. In the result, the concentration of leached heavy metals and pH value decreased with increasing carbonation reaction time whereas the bottom ash showed no effect. The mechanism of heavy metal-stabilization is supported by two findings during the carbonation reaction. First, the carbonation reaction is sufficient to decrease the pH and to form an insoluble heavy metal-material that contributes to a reduction of the leaching. Second, the adsorbent compound in the bottom ash controls the leaching of heavy metals; the calcite formed by the carbonation reaction has high affinity of heavy metals. In addition, approximately 5 kg/ton and 27 kg/ton $CO_2$ were sequestrated in ISWI bottom ash and fly ash after the carbonation reaction, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.96-97
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• 2012

In nitride and oxide film deposition, sputtered metals react with nitrogen or oxygen gas in a vacuum chamber to form metal nitride or oxide films on a substrate. The physical properties of sputtered films (metals, oxides, and nitrides) are strongly influenced by magnetron plasma density during the deposition process. Typical target power densities on the magnetron during the deposition process are ~ (5-30) W/cm2, which gives a relatively low plasma density. The main challenge in reactive sputtering is the ability to generate a stable, arc free discharge at high plasma densities. Arcs occur due to formation of an insulating layer on the target surface caused by the re-deposition effect. One current method of generating an arc free discharge is to use the commercially available Pinnacle Plus+ Pulsed DC plasma generator manufactured by Advanced Energy Inc. This plasma generator uses a positive voltage pulse between negative pulses to attract electrons and discharge the target surface, thus preventing arc formation. However, this method can only generate low density plasma and therefore cannot allow full control of film properties. Also, after long runs ~ (1-3) hours, depends on duty cycle the stability of the reactive process is reduced due to increased probability of arc formation. Between 1995 and 1999, a new way of magnetron sputtering called HIPIMS (highly ionized pulse impulse magnetron sputtering) was developed. The main idea of this approach is to apply short ${\sim}(50-100){\mu}s$ high power pulses with a target power densities during the pulse between ~ (1-3) kW/cm2. These high power pulses generate high-density magnetron plasma that can significantly improve and control film properties. From the beginning, HIPIMS method has been applied to reactive sputtering processes for deposition of conductive and nonconductive films. However, commercially available HIPIMS plasma generators have not been able to create a stable, arc-free discharge in most reactive magnetron sputtering processes. HIPIMS plasma generators have been successfully used in reactive sputtering of nitrides for hard coating applications and for Al2O3 films. But until now there has been no HIPIMS data presented on reactive sputtering in cluster tools for semiconductors and MEMs applications. In this presentation, a new method of generating an arc free discharge for reactive HIPIMS using the new Cyprium plasma generator from Zpulser LLC will be introduced. Data (or evidence) will be presented showing that arc formation in reactive HIPIMS can be controlled without applying a positive voltage pulse between high power pulses. Arc-free reactive HIPIMS processes for sputtering AlN, TiO2, TiN and Si3N4 on the Applied Materials ENDURA 200 mm cluster tool will be presented. A direct comparison of the properties of films sputtered with the Advanced Energy Pinnacle Plus + plasma generator and the Zpulser Cyprium plasma generator will be presented.

• Applied Chemistry for Engineering
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• v.25 no.3
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• pp.262-267
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• 2014

SAGD (steam assisted gravity drainage) process is the most commonly used in-situ technology for the recovery of bitumen from oil sand. It was investigated that the effects of different additives on bitumen recovery rate from oil sand in SAGD process among many possible mechanisms studied throughout the study. Bitumen recovery from thin layer oil sand reservoirs was simulated by using an experimental SAGD apparatus with scale of 150:1. To improve the simulation accuracy of thin layer oil reservoir, we have attached geological model (GM). Oil sand was simulated by using a mixture of extra heavy oil and glass beads with a diameter of 1.5 mm. $CO_2$ was used as an additive and the evolution of steam chambers were closely monitored, and the effects of $CO_2$ as an additive was investigated. Two types of injection methods were tested; continuous ($cCO_2$-SAGD) and sequential interruption ($sCO_2$-SAGD) $CO_2$ injection. For the $sCO_2$-SAGD experiment, it was observed that the recovery rates and CSOR were efficiently improved control experiment from 60.2% to 69.3% and 7.1 to 6.0, respectively, whereas $cCO_2$-SAGD experiment decreased from 60.2% to 57.6% and 7.1 to 7.3.

• Journal of Popular Narrative
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• v.25 no.2
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• pp.169-216
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• 2019

This study proposes the concept of Bachchin's Chronotope as a tool for analyzing coevolution between the genre of the epic and society. Bachchin says through the concept of chronotope, literary works are on the foundation on which the axs of time and space intersect, and the literary works standsuch intersections are always conversing with social and historical chronotopes and mutually penetrating. Thus, finding and analyzing chronotope in literary works and extended things such as films and dramas reveals how chronotope and chronotope of a society have created specific social realities through a process of resonance. To make analytical use of this concept, we proposed a "cronotope drama analysis method" and concretely analyzed the genre of Korean medical dramas. The naturalized categories of health care, health, and disease are socially constructed entities, and the analysis of public works that has a significant impact on this process of social construction is essential but was underperformed. According to the analysis, the Korean medical drama's "Chronotope" has evolved using "Chronotope of the school" and "Chronotope of the secret chamber". At this time, the genre of Chronotope was expanding spatially and converging in time. In other words, the influence of structures and systems within the genre has grown, and the capacity of individual actors has decreased. This change in chronotope was interpreted as resonating with the social reality of neo-liberalistic spatial expansion and simultaneous production. The neo-liberalistic trend that dominates Korean society has embraced the category of health care and was further influencing the chronotope of drama text. It can also be inferred that the popular understanding of health care produced by the medical drama genre has taken a break in the process of forming a social reality of health care again.

• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.288-295
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• 2009

We report the etch characteristics of GaAs and AlGaAs in the diffusion pump-based capacitively coupled $BCl_3$ plasma. Process variables were chamber pressure ($50{\sim}180$ mTorr), CCP power ($50{\sim}200\;W$) and $BCl_3$ gas flow rate ($2.5{\sim}10$ sccm). Surface profilometry was used for etch rate and surface roughness measurement after etching. Scanning electron microscopy was used to analyze the etched sidewall and surface morphology. Optical emission spectroscopy was used in order to characterize the emission peaks of the $BCl_3$ plasma during etching. We have achieved $0.25{\mu}m$/min of GaAs etch rate with only 5 sccm $BCl_3$ flow rate when the chamber pressure was in the range of 50{\sim}130 mTorr. The etch rates of AlGaAs were a little lower than those of GaAs at the conditions. However, the etch rates of GaAs and AlGaAs decreased significantly when the chamber pressure increased to 180 mTorr. GaAs and AlGaAs were not etched with 50 W CCP power. With $100{\sim}200\;W$ CCP power, etch rates of the materials increased over $0.3{\mu}m$/min. It was found that the etch rates of GaAs and AlGaAs were not always proportional to the increase of CCP power. We also found the interesting result that AlGaAs did not etched at 2.5 sccm $BCl_3$ flow rate at 75 mTorr and 100 W CCP power even though it was etched fast like GaAs with more $BCl_3$ gas flow rates. By contrast, GaAs was etched at ${{\sim}}0.3{\mu}m$/min at the 2.5 sccm $BCl_3$ flow rate condition. A broad molecular peak was noticed in the range of $500{\sim}700\;mm$ wavelength during the $BCl_3$ plasma etching. SEM photos showed that 10 sccm $BCl_3$ plama produced more undercutting on GaAs sidewall than 5 sccm $BCl_3$ plasma.

• KSBB Journal
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• v.23 no.1
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• pp.90-95
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• 2008

In this study, a combined process of sequential anaerobic-aerobic digestion (SAAD), fluidized-bed bioreactor (FBBR), and ultrafiltration (UF) for the treatment of small scale food waste leachate was developed and evaluated. The SAAD process was tested for performance and stability by subjecting leachate from food waste to a two-phase anaerobic digestion. The main process used FBBR composed of aerators for oxygen supply and fluidization, three 5 ton reaction chambers containing an aerobic mesophilic microorganism immobilized in PE (polyethylene), and a sedimentation chamber. The HRTs (hydraulic retention time) of the combined SAAD-FBBR-UF process were 30, 7, and 1 day, and the operation temperature was set to the optimal one for microbial growth. The pilot process maintained its performance even when the CODcr of input leachate fluctuated largely. During the operation, average CODcr, TKN, TP, and salt of the effluent were 1,207mg/L, 100mg/L, 50 mg/L, and 0.01 %, which corresponded to the removal efficiencies of 99.4%, 98.6%, 89.6%, and 98.5%, respectively. These results show that the developed process is able to manage high concentration leachate from food waste and remove CODcr, TKN, TP, and salt effectively.

• Agricultural and Biosystems Engineering
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• v.7 no.1
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• pp.1-7
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• 2006

A need exists to monitor and control the localized high temperatures often experienced in solar grain dryers, which result in grain cracking, reduced germination and loss of cooking quality. A verified finite element model would be a useful to monitor and control the drying process. This study examined the feasibility of the finite element method (FEM) to predict temperature distribution in solar grain dryers. To achieve this, an indirect solar grain dryer system was developed. It consisted of a solar collector, plenum and drying chambers, and an electric fan. The system was used to acquire the necessary input and output data for the finite element model. The input data comprised ambient and plenum chamber temperatures, prevailing wind velocities, thermal conductivities of air, grain and dryer wall, and node locations in the xy-plane. The outputs were temperature at the different nodes, and these were compared with measured values. The ${\pm}5%$ residual error interval employed in the analysis yielded an overall prediction performance level of 83.3% for temperature distribution in the dryer. Satisfactory prediction levels were also attained for the lateral (61.5-96.2%) and vertical (73.1-92.3%) directions of grain drying. These results demonstrate that it is feasible to use a two-dimensional (2-D) finite element model to predict temperature distribution in a grain solar dryer. Consequently, the method offers considerable advantage over experimental approaches as it reduces time requirements and the need for expensive measuring equipment, and it also yields relatively accurate results.