• Journal of the Korean Society for Nondestructive Testing
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• v.36 no.1
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• pp.18-26
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• 2016

The semiconductor industry is one of the key industries of Korea, which has continued growing at a steady annual growth rate. Important technology for the semiconductor industry is high integration of devices. This is to increase the memory capacity for unit area, of which key is photolithography. The photolithography refers to a technique for printing the shadow of light lit on the mask surface on to wafer, which is the most important process in a semiconductor manufacturing process. In this study, the width and step-height of wafers patterned through this process were measured to ensure uniformity. The widths and inter-plate heights of the specimens patterned using photolithography were measured using transmissive digital holography. A transmissive digital holographic interferometer was configured, and nine arbitrary points were set on the specimens as measured points. The measurement of each point was compared with the measurements performed using a commercial device called scanning electron microscope (SEM) and Alpha Step. Transmission digital holography requires a short measurement time, which is an advantage compared to other techniques. Furthermore, it uses magnification lenses, allowing the flexibility of changing between high and low magnifications. The test results confirmed that transmissive digital holography is a useful technique for measuring patterns printed using photolithography.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.3
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• pp.49-53
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• 2018

Since various methods to form well-aligned nano-/micro- patterns are underlying technologies to fabricate next generation wearable electronic devices, many efforts have been made to realize finer patterns in recent years. Among lots of patterning methods, the present invention includes a nano-transfer printing (n-TP) process which is advantageous in that a processing cost is low and high-resolution patterns can be formed within a short processing time. We successfully achieved pattern formation of highly ordered Pt lines with line-width of 250 nm, 500 nm, and $1{\mu}m$ on transparent and flexible substrates. In addition, we analyzed the durability of the patterns, showing excellent stability of line-shape even after a physical and repeated bending test of 500 times using a bending machine. As a result, it is expected that a n-TP process is very useful for forming various metal patterns, and it is also expected to be applied to wiring and interconnection technology of next generation flexible electronic devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.421-427
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• 2009

We successfully fabricated 4.7-inch organic thin film transistors array with $640{\times}480$ pixels on flexible substrate. All the processes were done by photolithography, spin coating and ink-jet printing. The OTFT-Electrophoretic (EP) pixel structure, based on a top gate OTFT, was fabricated. The mobility, ON/OFF ratio, subthreshold swing and threshold voltage of OTFT on flexible substrate are: 0.01 ^2/V-s, 1.3 V/dec, 10E5 and -3.5 V. After laminated the EP media on OTFT array, a panel of 4.7-inch $640{\times}480$ OTFT-EPD was fabricated. All of process temperature in OTFT-EPD is lower than $150^{\circ}C$. The pixel size in our panel is $150{\mu}m{\times}150{\mu}m$, and the aperture ratio is 50 %. The OTFT channel length and width is 20 um and 200um, respectively. We also used OTFT to drive EP media successfully. The operation voltages that are used on the gate bias are -30 V during the row data selection and the gate bias are 0 V during the row data hold time. The data voltages that are used on the source bias are -20 V, 0 V, and 20 V during display media operation.

• Journal of Powder Materials
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• v.31 no.2
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• pp.169-179
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• 2024

Colloidal quantum dot (QDs) have emerged as a crucial building block for LEDs due to their size-tunable emission wavelength, narrow spectral line width, and high quantum efficiency. Tremendous efforts have been dedicated to improving the performance of quantum dot light-emitting diodes (QLEDs) in the past decade, primarily focusing on optimization of device architectures and synthetic procedures for high quality QDs. However, despite these efforts, the commercialization of QLEDs has yet to be realized due to the absence of suitable large-scale patterning technologies for high-resolution devices., This review will focus on the development trends associated with transfer printing, photolithography, and inkjet printing, and aims to provide a brief overview of the fabricated QLED devices. The advancement of various quantum dot patterning methods will lead to the development of not only QLED devices but also solar cells, quantum communication, and quantum computers.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.4
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• pp.11-15
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• 2001

In this paper, hermetic sealing technology was studied for wafer level packaging of the RF-MEMS devices. With the flip-chip bonding method. this non-conductive B-stage epoxy sealing will be profit to the MEMS device sealing. It will be particularly profit to the RF-MEMS device sealing. B-stage epoxy can be cured by 2-step and hermetic sealing can be obtained. After defining 500 $\mu\textrm{m}$-width seal-lines on the glass cap substrate by screen printing, it was pre-baked at $90^{\circ}C$ for about 30 minutes. It was, then, aligned and bonded with device substrate followed by post-baked at $175^{\circ}C$ for about 30 minutes. By using this 2-step baking characteristic, the width and the height of the seal-line could be maintained during the sealing process. The height of the seal-line was controlled within $\pm$0.6 $\mu\textrm{m}$ in the 4 inches wafer and the bonding strength was measured to about 20MPa by pull test. The leak rate, that is sealing characteristic of the B-stage epoxy, was about $10^{-7}$ cc/sec from the leak test.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• Progress in Medical Physics
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• v.28 no.3
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• pp.106-110
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• 2017

The variable density phantom fabricated with varying the infill values of 3D printer to provide more accurate dose verification of radiation treatments. A total of 20 samples of rectangular shape were fabricated by using the $Finebot^{TM}$ (AnyWorks; Korea) Z420 model ($width{\times}length{\times}height=50mm{\times}50mm{\times}10mm$) varying the infill value from 5% to 100%. The samples were scanned with 1-mm thickness using a Philips Big Bore Brilliance CT Scanner (Philips Medical, Eindhoven, Netherlands). The average Hounsfield Unit (HU) measured by the region of interest (ROI) on the transversal CT images. The average HU and the infill values of the 3D printer measured through the 2D area profile measurement method exhibited a strong linear relationship (adjusted R-square=0.99563) in which the average HU changed from -926.8 to 36.7, while the infill values varied from 5% to 100%. This study showed the feasibility fabricating variable density phantoms using the 3D printer with FDM (Fused Deposition Modeling)-type and PLA (Poly Lactic Acid) materials.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.6
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• pp.176-183
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• 2002

Plasma Display Panel(PDP) is a type of flat panel display utilizing the light emission produced by gas discharge. Barrier Ribs of PDP separating each sub-pixel prevents optical and electrical crosstalks from adjacent sub-pixels. The mold for forming the barrier ribs has been newly researched to overcome the disadvantages of conventional manufacturing processes such as screen printing, sand-blasting and photosensitive glass methods. The mold for PDP barrier ribs have stripes of micro grooves transferring glass-material wall. In this paper , Stripes of grooves of which width 48$\mu$m, depth 124$\mu$m , pitch 274$\mu$m was acquired by machining of single crystal silicon with dicing saw blade. Maximum roughness of the bottom of the grooves was 59.6 nm Ra in grooving Si. Barrier ribs were farmed with silicone rubber mold, which is transferred from grooved Si forming hard mold. Silicone rubber mold has the elasticity, which enable to accommodate the waviness of lower glass plate of PDP. The methods assisted by the microwave and UV was adopted for reducing the forming time of glass paste.

• The korean journal of orthodontics
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• v.42 no.1
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• pp.47-54
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• 2012

Objective: To determine and compare the frequency distribution of various arch shapes in ethnic Malays and Malaysian Aborigines in Peninsular Malaysia and to investigate the morphological differences of arch form between these two ethnic groups. Methods: We examined 120 ethnic Malay study models (60 maxillary, 60 mandibular) and 129 Malaysian Aboriginal study models (66 maxillary, 63 mandibular). We marked 18 buccal tips and incisor line angles on each model, and digitized them using 2-dimensional coordinate system. Dental arches were classified as square, ovoid, or tapered by printing the scanned images and superimposing Orthoform arch templates on them. Results: The most common maxillary arch shape in both ethnic groups was ovoid, as was the most common mandibular arch shape among ethnic Malay females. The rarest arch shape was square. Chi-square tests, indicated that only the distribution of the mandibular arch shape was significantly different between groups (p = 0.040). However, when compared using independent t-tests, there was no difference in the mean value of arch width between groups. Arch shape distribution was not different between genders of either ethnic group, except for the mandibular arch of ethnic Malays. Conclusions: Ethnic Malays and Malaysian Aborigines have similar dental arch dimensions and shapes.

• Journal of the Korean Ceramic Society
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• v.41 no.4
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• pp.313-322
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• 2004

Thick film photolithography is a new technology in that the lithography process such as exposure and development is applied to the conventional thick film process including screen-printing. In this research, low-temperature cofireable silver paste, which enabled the formation of thick film fine-line using photolithographic technology, was developed. The optimum composition for fine-line forming was studied by adjusting the amounts of silver powder, polymer and monomer, and the additional amount of photoinitiator, and then the effect of processing parameter such as exposing dose on the formation of fine-line was also tested. As the result, it was found that the ratio of polymer to monomer, silver powder loading, and the amount of photoinitiator were the main factors affecting the resolution of fine-line. The developed photosensitive silver paste was printed on low-temperature cofireable green sheet, then dried, exposed, developed in aqueous process, laminated, and fired. Results showed that the thick film fine-line under 20$\mu\textrm{m}$ width could be obtained after cofiring.