• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.657-662
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• 2005

In this study, the deposition of micrometer-scale metallic interconnects on LCD glass for the repair of open-circuit type defects is investigated. Although there had been a few studies Since 1980 s for the deposition of metallic interconnects by laser-induced chemical vapor deposition, those studies mostly used continuous wave lasers. In this work, a third harmonic Nd:YLF laser (351nm) of high repetition rates, up to 10 KHz, was used as the illumination source and $W(CO)_6$ was selected as the precursor. General characteristics of the metal deposit (tungsten) such as height, width, morphology as well as electrical properties were examined for various process conditions. Height of the deposited tungsten lines ranged from 35 to 500 nm depending on laser power and scan speed while the width was controlled between $3\~50{\mu}$ using a slit placed in the beam path. The resistivity of the deposited tungsten lines was measured to be below 1 $O\cdot{\mu}m$, which is an acceptable value according to the manufacturing standard. The tungsten lines produced at high scan speed had good surface morphology with little particles around the patterns. Experimental results demonstrated that it is likely that the deposit forms through a hybrid process, namely through the combination of photolytic and pyrolytic mechanisms.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.8
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• pp.1747-1752
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• 2012

The SiOC film of carbon centered system was prepared using bistrimethylsilylmethane (BTMSM) and oxygen mixed precursor by the chemical vapor deposition. The dielectric constant is measured by MIS(metal/insulator/Si) structure, but it could decrease the reliability because the uniformity is not assured. To research the dielectric constant of SiOC film, the range of low polarization was researched in SiOC film using the optical analysis and hardness, and then calculated the dielectric constant of SiOC film with amorphous structure of high degree. After annealing, the dielectric constant of SiOC film was decreased owing to the lowering of polarization, and FTIR spectra of the main bond was shifted to higher wave number. The main bond of 950~1200 cm-1 was composed of the Si-C and Si-O bonds. The intensity increases in Si-O bond infers the bonding strength became stronger than that of deposited film. Annealed SiOC film showed 2.06 in dielectric constant.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.8 s.173
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• pp.165-173
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• 2005

This paper presents the results for deposition of micrometer-scale metal lines on glass for the development of TFT-LCD circuit repair-system. Although there had been a few studies in the late 1980's for the deposition of metallic interconnects by laser-induced chemical vapor deposition, those studies mostly used continuous wave lasers. In this work, a third harmonic Nd:YLF laser (351nm) of high repetition rates, up to 10 KHz, was used as the illumination source and W(CO)s was selected as the precursor. General characteristics of the metal deposit (tungsten) such as height, width, morphology as well as electrical properties were examined for various process conditions. Height of the deposited tungsten lines ranged from 35 to 500 m depending on laser power and scan speed while the width was controlled between 50um using a slit placed in the beam path. The resistivity of the deposited tungsten lines was measured to be below $1{\Omega}{\cdotu}um$, which is an acceptable value according to the manufacturing standard. The tungsten lines produced at high scan speed had good surface morphology with little particles around the patterns. Experimental results demonstrated that it is likely that the deposit forms through a hybrid process, namely through the combination of photolytic and pyrolytic mechanisms.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.80-80
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• 2000

Surface acoustic wave (SAW) devices have become more important as mobile telecommunication systems need h호-frrequency, low-loss, and down-sized components. Higher-frequency SAW divices can be more sasily realized by developing new h호-SAW-velocity materials. The ZnO/diamond/Si multilasyer structure is one of the most promising material components for GHz-band SAW filters because of its SAW velocity above 10,000 m/sec. Silicon carbide is also a potential candidate material for high frequency, high power and radiation resistive electronic devices due to its superior mechanical, thermal and electronic properties. However, high price of commercialized 6- or 4H-SiC single crystalline wafer is an obstacle to apply SiC to high frequency SAW devices. In this study, single crystalline 3C-SiC thin films were grown on Si (100) by MOCVD using bis-trimethylsilymethane (BTMSM, C7H20Si7) organosilicon precursor. The 3C-SiC film properties were investigated using SEM, TEM, and high resolution XRD. The FWHM of 3C-SiC (200) peak was obtained 0.37 degree. To investigate the SAW propagation characteristics of the 3C-SiC films, SAW filters were fabricated using interdigital transducer electrodes on the top of ZnO/3C-SiC/Si(100), which were used to excite surface acoustic waves. SAW velocities were calculated from the frequency-response measurements of SAW filters. A generalized SAW mode. The hard 3C-SiC thin films stiffened Si substrate so that the velocities of fundamental and the 1st mode increased up to 5,100 m/s and 9,140 m/s, respectively.

• Journal of Environmental Science International
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• v.11 no.5
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• pp.419-436
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• 2002

The current paper reports on the enhancement of O$_3$, CO, NO$_2$, and aerosols during the Asian dust event that occurred over Korea on 1 May 1999. To confirm the origin and net flux of the O$_3$, CO, NO$_2$, and aerosols, the meteorological parameters of the weather conditions were investigated using Mesoscale Meteorological Model 5(MM5) and the TOMS total ozone and aerosol index, the back trajectory was identified using the Hybrid Single-Particle Lagrangian Integrated Trajectory Model(HYSPLIT), and the ozone and ozone precursor concentrations were determined using the Urban Ashed Model(UAM). In the presence of sufficiently large concentrations of NO$\sub$x/, the oxidation of CO led to O$_3$ formation with OH, HO$_2$, NO, and NO$_2$ acting as catalysts. The sudden enhancement of O$_3$, CO, NO$_2$ and aerosols was also found to be associated with a deepening cut-off low connected with a surface cyclone and surface anticyclone located to the south of Korea during the Asian dust event. The wave pattern of the upper trough/cut-off low and total ozone level remained stationary when they came into contact with a surface cyclone during the Asian dust event. A typical example of a stratosphere-troposphere exchange(STE) of ozone was demonstrated by tropopause folding due to the jet stream. As such, the secondary maxima of ozone above 80 ppbv that occurred at night in Busan, Korea on 1 May 2001 were considered to result from vertical mixing and advection from a free troposphere-boundary layer exchange in connection with an STE in the upper troposphere. Whereas the sudden enhancement of ozone above 100 ppbv during the day was explained by the catalytic reaction of ozone precursors and transport of ozone from a slow-moving anticyclone area that included a high level of ozone and its precursors coming from China to the south of Korea. The aerosols identified in the free troposphere over Busan, Korea on 1 May 1999 originated from the Taklamakan and Gobi deserts across the Yellow River. In particular, the 1000m profile indicated that the source of the air parcels was from an anticyclone located to the south of Korea. The net flux due to the first invasion of ozone between 0000 LST and 0600 LST on 1 May 1999 agreed with the observed ground-based background concentration of ozone. From 0600 LST to 1200 LST, the net flux of the second invasion of ozone was twice as much as the day before. In this case, a change in the horizontal wind direction may have been responsible for the ozone increase.

• Asia-Pacific Journal of Business Venturing and Entrepreneurship
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• v.18 no.5
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• pp.123-139
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• 2023

Incubating future social entrepreneurs is of increasing importance for governments and industries that aim to create positive social changes through innovative, market-based solutions. Considering the distinct and challenging nature of a social entrepreneurial career, prior research has explored various antecedents of the formation of social entrepreneurial intention. The current research aims to contribute to the literature by examining social class as a potential precursor of individuals' social entrepreneurial intention formation, with a specific focus on social entrepreneurial identity aspiration as the underlying psychological mechanism and communal narcissism as the contingent factor. Using a two-wave survey data collected among 144 potential entrepreneurs from South Korea, we tested a moderated mediation model to validate the research propositions. The findings can be summarized as follows. First, lower social class was associated with higher social entrepreneurial identity aspiration. Second, when communal narcissism was high(low), the negative relationship between social class and social entrepreneurial identity aspiration was stronger(weaker). Third, communal narcissism moderated the negative impact of social class on social entrepreneurial intention via its effect on social entrepreneurial identity aspiration. This study has significant implications on several fronts. First, we explore the motivations that drive individuals from lower-class backgrounds to participate in social entrepreneurship, going beyond the previous notion that a higher-class context promotes entrepreneurial pursuits. Second, we delve into the underlying mechanism and condition that influence the formation of social entrepreneurial intentions, highlighting the pivotal roles played by social entrepreneurial identity aspiration and communal narcissism. Our findings provide practical insights for institutions seeking to foster the involvement of prospective social entrepreneurs from lower-class backgrounds, thereby generating positive outcomes for marginalized communities.