• Korean Journal of Materials Research
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• v.20 no.8
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• pp.434-438
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• 2010

The selenization process has been a promising method for low-cost and large-scale production of high quality CIGS film. However, there is the problem that most Ga in the CIGS film segregates near the Mo back contact. So the solar cell behaves like a $CuInSe_2$ and lacks the increased open-circuit voltage. In this study we investigated the Ga distribution in CIGS films by using the $Ga_2Se_3$ layer. The $Ga_2Se_3$ layer was applied on the Cu-In-Ga metal layer to increase Ga content at the surface of CIGS films and to restrict Ga diffusion to the CIGS/Mo interface with Ga and Se bonding. The layer made by thermal evaporation was showed to an amorphous $Ga_2Se_3$ layer in the result of AES depth profile, XPS and XRD measurement. As the thickness of $Ga_2Se_3$ layer increased, a small-grained CIGS film was developed and phase seperation was showed using SEM and XRD respectively. Ga distributions in CIGS films were investigated by means of AES depth profile. As a result, the [Ga]/[In+Ga] ratio was 0.2 at the surface and 0.5 near the CIGS/Mo interface when the $Ga_2Se_3$ thickness was 220 nm, suggesting that the $Ga_2Se_3$ layer on the top of metal layer is one of the possible methods for Ga redistribution and open circuit voltage increase.

• Korean Journal of Materials Research
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• v.20 no.8
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• pp.429-433
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• 2010

In this study, activated carbon (AC) as a carbon source was modified with different concentrations of cobalt chloride ($CoCl_2$) to prepare a Co-AC composite, and it was used for the preparation of Co-AC/$TiO_2$ composites with titanium oxysulfate (TOS) as the titanium precursor. The physicochemical properties of the prepared Co-AC/$TiO_2$ composites were characterized by $N_2$ adsorption at 77 K, X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive X-ray (EDX) analysis. The photocatalytic treatments of organic dyes were examined under an irradiation of visible light with different irradiation times. $N_2$ adsorption data showed that the composites had decreased surface area compared with the pristine AC, which was $389\;m^2/g$. From the XRD results, the Co-AC/$TiO_2$ composites contained a mixturephase structuresof anatase and rutile, but a cobalt oxide phase was not detected in the XRD pattern. The EDX results of the Co-AC/$TiO_2$ composites confirmed the presence of various elements, namely, C, O, Ti, and Co. Subsequently, the decomposition of methylene orange (MO, $C_{14}H_{14}N_3NaO_3S$) and rhodamine B (Rh.B, $C_{28}H_{31}ClN_2O_3$) in an aqueous solution, respectively, showed the combined effects of an adsorption effect by AC and the photo degradation effect by $TiO_2$. Especially, the Co particles in the Co-AC/$TiO_2$ composites could enhance the photo degradation behaviors of $TiO_2$ under visible light.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.05a
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• pp.139-145
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• 2005

In the study, in order to deposit TaN thin film using diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristic of TaN thin films deposited PAALD method, PAALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamlno) tantalum) Precursor and $NH_3$ reaction gas is aware that TaN thin film deposited of high density and amorphous phase with XRD measurement The degree of diffusion and react ion taking place in Cu/TaN(deposited using 150 W PAALD)/$SiO_2$/Si systems with increasing annealing temperature was estimated from MOS capacitor property and the $SiO_2(600\;\AA)$/Si system surface analysis by C-V measurement and secondary ion material spectrometer(SIMS) after Cu/TaN/$SiO_2(400\;\AA)$ system etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to $500^{\circ}C$.

• Membrane Journal
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• v.24 no.6
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• pp.417-422
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• 2014

The poly(ethylene oxide) (PEO)/Ag Nanoparticles (NPs)/7,7,8,8-Tetracyanoquinodimethane (TCNQ) membrane was fabricated to obtain highly permeable facilitated olefin transport nanocomposite membrane, compared with PEO/Ag NPs/p-Benzoquinone (p-BQ) membrane. Polymer matrix, PEO and silver nanoparticle precursor $AgBF_4$ were fixed at 1 : 0.4 mole ratio and electron acceptor TCNQ content was controlled variously. And the best olefin separation performance was obtained at 1/0.4/0.004 mole ratio, and long-term separation performance was measured at this ratio. As a result, mixed-gas permeance decreased from 23 to 6 GPU, and selectivity decreased from 6 to 2 (propylene/propane) after 32 hours.

• Journal of the Mineralogical Society of Korea
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• v.13 no.4
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• pp.171-185
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• 2000

Siliceous mudstones are embedded on a large scale in the Tertiary formations of Pohang area. Some useful zeolites such as NsP, (Na, TMA)P, analcime and hydroxysodalite were synthesized from the siliceous mudstones by treating with the variety of solution, i.e ., NaOH, NaOH+NaCl, NaOH, NaOH+$NaAlO_2$and NaOH+TMAOH at the low-temperature hydrothermal system ranging 60~12$0^{\circ}C$. Major precursor of zeolites is found as opal-CT in the zeolite-forming reaction. Smectite, which is included in considerable amounts in the mudstone, appears to play a major role of Al-source in the zeolite synthesis. In comparison, chalcedonic quartz and mica are rather insoluble in alkaline solution, and thus, these are observed as major impurities in the reaction products. An addition of $NaAlO_2$to NaOH solution is effective for eliminating these impurities in the reaction procedure, through these are partly dissolved when elevating the reaction temperature, concentration, and time. Phase change from NaP to hydroxysodalite takes place at the NaOH concentrations of 3.0~4.0 M, and the reaction is not sensitive to the temperature shift. NaP is more stable at lower NaOH concentration and higher activity of $Na_{+}$ whereas analcime is sensitive to the temperature change and stable at higher than $100^{\circ}C$ and 2.0~4.0 M in NaOH concentration. For the pure NaP synthesis without any other products, the treatment of mudstones with 1:1 solution of NaOH and $NaAlO _2$ turns out to be quite effective. NaP was successfully synthesized together with analcime at $100^{\circ}C$ as well as lower concentrations of NaOH+NaCl solution. In addition, the organic type, (Na, TMA)P was formed together with smectite in the 1:1 solution of NaOH and TMAOH.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.3
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• pp.109-114
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• 2016

Monodispersed $ZnGa_2O_4$ microspheres were synthesized by a facile two-step process consisting of a solvothermal method and calcination process. The prepared monodispersed $ZnGa_2O_4$ microspheres were aggregated into 3D microstructures by self-assembly with a large number of small $ZnGa_2O_4$ particles generated in nucleation. This nucleation and self-assembly making hierarchical microstructures were depended on the concentration of PEG (polyethylene glycol) due to CAC (critical aggregation concentration) theory. And also we controlled the amount of zinc acetate to make pure $ZnGa_2O_4$ phase. Additionally, to fix the optimized calcination condition, sample was characterized by TG-DTA to prove the thermal property in the calcination process and by FT-IR to identify the changes of functional group bonding between each element of the $ZnGa_2O_4$ precursor and oxide calcined at $900^{\circ}C$ for 1 h.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.3
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• pp.118-122
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• 2018

Ceria ($CeO_2$) is a rare earth oxide, which has been widely investigated to improve the property. It is important to increase the surface area of $CeO_2$, because high surface area of $CeO_2$ can improve the catalytic ability. $CeO_2$ nanoparticles were synthesized by a solvothermal process. A discussion on the influence of solvent ratio and precursors on $CeO_2$ nanoparticles was performed. The size and degree of the agglomeration of the synthesized $CeO_2$ could be tuned by controlling those parameters. The average size and distribution of prepared $CeO_2$ powders was in the range of 3 to 13 nm and narrow, respectively. The XRD pattern showed that the synthesized $CeO_2$ powders were crystalline with cubic phase of $CeO_2$. The average particle size was calculated by Scherrer equation and FE-TEM images. The morphology of the synthesized $CeO_2$ particle was objected using FE-TEM and FE-SEM. Specific surface area of the synthesized $CeO_2$ was determined using BET (Brunauer-Emmett-Teller) equation.

• Bulletin of the Korean Chemical Society
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• v.30 no.2
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• pp.348-354
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• 2009

Copper(II) complexes with tetraoxo dithia tetraaza macrocyclic ligands; [18]ane$N_4S_2$: 1,4,10,13-tetraaza-5,9,14,18-tetraoxo-7,16-dithia-cyclooctadecane, [20]ane$N_4S_2$: 1,5,11,15-tetraaza-6,10,16,20-tetraoxo-8,18-dithia-cyclocosane,Bzo2[18]ane$N_4S_2$: dibenzo-1,4,10,13-tetraaza-5,9,14,18-tetraoxo-7,16-dithia-cyclooctadecane, Bzo2[20]ane$N_4S_2$: dibenzo-1,5,11,15-tetraaza-6,10,16,20-tetraoxo-8,18-dithia-cyclocosane; were entrapped in the nanopores of zeolite-Y by a two-step process in the liquid phase: (i) adsorption of [bis(diamine)copper(II)] (diamine = 1,2-diaminoethane, 1,3-diaminopropane, 1,2-diaminobenzene, 1,3-diaminobenzene); $[Cu(N-N)_2]^{2+}$-NaY; in the nanopores of the zeolite, and (ii) in situ template condensation of the copper(II) precursor complex with thiodiglycolic acid. The obtained complexes and new host-guest nanocomposite materials; $[Cu([18]aneN_4S_2)]^{2+}-NaY,\;[Cu([20]aneN_4S_2)]^{2+}-NaY,\;[Cu(Bzo_2[18]aneN_4S_2)]^{2+}-NaY,\;[Cu(Bzo_2[20]aneN_4S_2)]^{2+}$-NaY; have been characterized by elemental analysis FT-IR, DRS and UV-Vis spectroscopic techniques, molar conductance and magnetic moment data, XRD and, as well as nitrogen adsorption. Analysis of data indicates all of the complexes have been encapsulated within nanopore of zeolite Y without affecting the zeolite framework structure.

• Journal of the Semiconductor & Display Technology
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• v.4 no.2 s.11
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• pp.39-43
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• 2005

In the study, in order to deposit TaN thin film for diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristics of TaN thin films grown PAALD method. Plasma Assisted ALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamino) tantalum) precursor and NH3 reaction gas is shown that TaN thin film deposited high density and amorphous phase with XRD measurement. The degree of diffusion and reaction taking place in Cu/TaN (deposited using 150W PAALD)/$SiO_{2}$/Si systems with increasing annealing temperature was estimated for MOS capacitor property and the $SiO_{2}$, (600${\AA}$)/Si system surface analysis by C-V measurement and secondary ion material spectrometer (SIMS) after Cu/TaN/$SiO_{2}$ (400 ${\AA}$) layer etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to 500$^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.9
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• pp.423-429
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• 2002

RuOx thin films were fabricated by the method of liquid delivery MOCVD using Ru(C$_{8}$ $H_{13}$ $O_2$)$_3$ as the precursor and their thermal effects and conductivity were investigated. Ru films deposited at 25$0^{\circ}C$ were annealed at $650^{\circ}C$ for 1min with Ar, $N_2$ or N $H_3$ ambient. The changes of the micro-structure, the surface morphology and the electrical resistivity of the Ru films after annealing were studied. Ar gas was more effective than $N_2$ and N $H_3$ gases as an ambient gas for the post annealing of the Ru films, because of smaller resistivity and denser grains. The X-ray diffraction and X-ray photoelectron spectroscopy results indicate that the Ru $O_2$ phase and the silicidation are not observed regardless of the ambient gases. The minimum resistivity of the Ru film is found to have the value of 26.35 $\mu$Ω-cm in Ar ambient. Voids were formed at Ru/TiN interface of the Ru layer after annea1ing in $N_2$ ambient. The $N_2$ gas generated due to the oxidation of the TiN layer accumulated at the Ru/TiN interface, forming bubbles; consequently, the stacked film may peel off the Ru/TiN interface.e.