• Title/Summary/Keyword: Precision Machinery

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Utilization of Laser Range Measurements for Guiding Unmanned Agricultural Machinery

  • Jung, I. G.;Park, W. P.;Kim, S. C.;Sung, J. H.;Chung, S. O.
    • Agricultural and Biosystems Engineering
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    • v.2 no.2
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    • pp.69-74
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    • 2001
  • Detection of operation lines in farm works, object recognition and obstacle avoidance are essential pre-requisite technologies for unmanned agricultural machinery. A CCD camera, which has been largely used for these functions, is expensive and has difficulty in real-time signal processing. In this study, a laser range sensor was selected as the guiding vision for unmanned agricultural machinery such as a tractor. To achieve this capability, algorithms for distance measurement, signal filtering, object recognition, and obstacle avoidance were developed. Computer simulations were carried out to evaluate performance of the algorithms. Experiments were also conducted with various materials and shapes, Laser beam lost its intensity for poor reflective materials, resulting in less range value than actual, so a compensation technique was considered to be necessary. Object detection system was fabricated on an agricultural tractor and the performance was evaluated. As test result for obstacle detection and avoidance in field, to detect and avoid obstacle for path finding with guiding system for unmanned agricultural machinery was enable.

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High Resolution Electrodes Fabrication for OTFT Array by using Microcontact Printing and Room Temperature Process

  • Jo, Jeong-Dai;Choi, Ju-Hyuk;Kim, Kwang-Young;Lee, Eung-Sug;Esashi, Masayoshi
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.186-189
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    • 2006
  • The flexible organic thin film transistor (OTFT) array to use as a switching device for an organic light emitting diode (OLED) was designed and fabricated in the microcontact printing and room temperature process. The gate, source, and drain electrode patterns of OTFT were fabricated by microcontact printing process. The OTFT array with dielectric layer and organic active semiconductor layer formed at room temperature or at a temperature lower than $40^{\circ}C$. The microcontact printing process using SAM and PDMS stamp made it possible to fabricate OTFT arrays with channel lengths down to even submicron size, and reduced the fabrication process by 10 steps compared with photolithography. Since the process was done in room temperature, there was no pattern shrinkage, transformation, and bending problem appeared. Also, it was possible to improve electric field mobility, to decrease contact resistance, to increase close packing of molecules by SAM, and to reduce threshold voltage by using a big dielectric.

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ISB Bonding Technology for TSV (Through-Silicon Via) 3D Package (TSV 기반 3차원 반도체 패키지 ISB 본딩기술)

  • Lee, Jae Hak;Song, Jun Yeob;Lee, Young Kang;Ha, Tae Ho;Lee, Chang-Woo;Kim, Seung Man
    • Journal of the Korean Society for Precision Engineering
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    • v.31 no.10
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    • pp.857-863
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    • 2014
  • In this work, we introduce various bonding technologies for 3D package and suggest Insert-Bump bonding (ISB) process newly to stack multi-layer chips successively. Microstructure of Insert-Bump bonding (ISB) specimens is investigated with respect to bonding parameters. Through experiments, we study on find optimal bonding conditions such as bonding temperature and bonding pressure and also evaluate in the case of fluxing and no-fluxing condition. Although no-fluxing bonding process is applied to ISB bonding process, good bonding interface at $270^{\circ}C$ is formed due to the effect of oxide layer breakage.

Electron beam lithography patterning research for stamper fabrication using nano-injection molding (나노사출성형용 스탬퍼 제작을 위한 Electron beam lithography 패터닝 연구)

  • Uhm S.J.;Seo Y.H.;Yoo Y.E.;Choi D.S.;Je T.J.;Whang K.H.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2005.10a
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    • pp.698-701
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    • 2005
  • We have investigated experimentally a nano patterning using electron beam lithography for the nickel stamper fabrication. Recently, DVD and Blu-ray disk(BD) have nano-scale patterns in order to increase the storage density. Specially, BD has 100nm-scale patterns which are generally fabricated by electron beam lithography. In this paper, we found optimum condition of electron-beam lithography for 100nm-scale patterning. We controlled various conditions of EHP(acceleration voltage), beam current, dose and aperture size in order to obtain optimum conditions. We used 100nm-thick PMMA layer on a silicon wafer as photoresist. We found that EHP was the most dominant factor in electron-beam lithography.

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