• Title/Summary/Keyword: Pre-film

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Conducting Characteristics of ABS/PPy Composite Film Prepared by Electrochemical Polymerization (전기화학적 중합으로 제조된 ABS/PPy 복합 박막의 전도특성)

  • Kim, J.;Yoon, D.Y.;Kim, D.H.;Han, C.;Kim, S.
    • Journal of the Korean Electrochemical Society
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    • v.5 no.3
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    • pp.164-167
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    • 2002
  • ABS/Polypyrrole composite film has been synthesized by means of electrochemical polymerization in order to enhance the oxidant stability by using ABS(Acrylonitrile-Butadiene-Strene) as a host-polymer. While the acetonitrile as a solvent swells the host-polymer ABS on Pt plate, and then the pyrrole in an electrolyte penetrates the Pre-coated ABS film during electrochemical Polymerization. Comparing with the sin91e-component Polypynole film, the resulting conducting ABS/PPy composite nim shows the good reliability for the uniform resistance and the enhancement of the oxidant stabilization.

Lateral Growth of PEO Films on Al1050 Alloy in an Alkaline Electrolyte

  • Moon, Sungmo;Kim, Yeajin
    • Journal of Surface Science and Engineering
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    • v.50 no.1
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    • pp.10-16
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    • 2017
  • This article reports for the first time on the lateral growth of PEO (plasma electrolytic oxidation) films on Al1050 alloy by the application of anodic pulse current in an alkaline electrolyte. Generation of microarcs was observed at the edges initially and then moved towards the central region with PEO treatment time. Disc type PEO film islands with about $20{\mu}m$ diameter were formed first and they grew laterally by the formation of new disc type PEO films at the edge of pre-formed PEO islands. The PEO film islands were found to be interconnected completely and form a continuous PEO film when generation of small size microarcs are terminated at the central part of the specimen, resulting in very smooth surface with low surface roughness less than $1{\mu}m$ of $R_a$. Further PEO treatment after the complete interconnection of PEO films islands showed local thickening of PEO films by vertical growth. It is concluded that very smooth PEO film surface can be obtained by lateral growth mechanism rather than vertical growth of them.

Optimization of PMD(Pre-Metal Dielectric) Linear Nitride Precess (PMD(Pre-Metal Dielectric) 선형 질화막 공정의 최적화에 대한 연구)

  • 정소영;김상용;서용진
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.10
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    • pp.779-784
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    • 2001
  • In this work, we studied the characteristics of nitride films for the optimization of PMD(pro-metal dielectric) linear process, which can be applied to the recent semiconductor manufacturing process. We split the deposit condition of nitride films into four parts such as PO(protect overcoat) nitride, baseline, low hydrogen and high stress and low hydrogen, respectively. We tried to find out correlation between BPSG deposition and densification. In order to analyze the changes of Si-H and Si-NH-Si bonding density, we used FTIR area method. We also investigated the crack generation on wafer edge after BPSG densification, and the changes of nitride film stress as a function of RF power variation to judge whether the deposited films.

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ECONOMY IN RADIOGRAPHY THROUGH QUALITY

  • Lenaerts, C.
    • Journal of the Korean Society for Nondestructive Testing
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    • v.8 no.1
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    • pp.44-48
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    • 1988
  • Quality and economy in radiography can be achieved by using the right techniques and the film material available on the market. Pre-packing with or without lead, under vacuum or not, play an important role provided the right kinds of procedures are applied. The author explains some of the ways used by different N.D.T.companies to achieve the best quality in an economical way.

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Sensitive and Selective Electrochemical Glucose Biosensor Based on a Carbon Nanotube Electronic Film (탄소나노튜브 전자 필름을 이용한 고감도-고선택성 전기화학 글루코스 센서)

  • Lee, Seung-Woo;Lee, Dongwook;Seo, Byeong-Gwuan
    • Applied Chemistry for Engineering
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    • v.33 no.2
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    • pp.188-194
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    • 2022
  • This work presents a non-destructive and straightforward approach to assemble a large-scale conductive electronic film made of a pre-treated single-walled carbon nanotube (SWCNT) solution. For effective electron transfer between the immobilized enzyme and SWCNT electronic film, we optimized the pre-treatment step of SWCNT with p-terphenyl-4,4"-dithiol and dithiothreitol. Glucose oxidase (GOx, a model enzyme in this study) was immobilized on the SWCNT electronic film following the positively charged polyelectrolyte layer deposition. The glucose detection was realized through effective electron transfer between the immobilized GOx and SWCNT electronic film at the negative potential value (-0.45 V vs. Ag/AgCl). The SWCNT electronic film-based glucose biosensor exhibited a sensitivity of 98 ㎂/mM·cm2. In addition, the SWCNT electronic film biosensor showed the excellent selectivity (less than 4 % change) against a variety of redox-active interfering substances, such as ascorbic acid, uric acid, dopamine, and acetaminophen, by avoiding co-oxidation of the interfering substances at the negative potential value.

ALLOY STRUCTURE AND ANODIC FILM GROWTH ON RAPIDLY SOLIDIFIED AL-SI-BASED ALLOYS

  • Kim, H.S.;Thompson, G.E.;Wood, G.C.;Wright, I.G.;Maringer, R.E.
    • Journal of Surface Science and Engineering
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    • v.17 no.2
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    • pp.29-40
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    • 1984
  • The structure of rapidly solidified Al-Si-based alloys and its relationship to subsequent anodic film growth in near neutral and acid solutions have been investigated. Solidification of the alloys proceeds via pre-dendritic nuclei, associated with rugosity of the casting surface, from which cellular-type growth, comprised of aluminium-rich material surrounded by silicon-containing material, emanates. Observation of ultramicrotomed sections of the alloys and their anodic films reveals the local oxidation of the silicon-rich phase and its incorporation into the anodic alumina film, formed in near neutral solutions. Such incorporation occurs but resultant isolation of the silicon-rich phase is not possible for anodizing in phosphoric acid, and a three-dimensional network of the oxidized silicon-containing phase, with continuing development of porous anodic alumina, is observed.

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