• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.08a
• /
• pp.296-296
• /
• 2011

동시 증발법(co-evaporation)에 의해 성장된 $CuIn_xGa_{1-x}Se_2$ (CIGS) 박막의 광학적 특성을 photoreflectance (PR) 분광법으로 연구하였다. 조성비 x는 0~1까지 변화시켰다. 시료의 두께는 약 2.2 ${\mu}m$였다. PR 측정은 변조빔 세기, 변조빔 주파수 및 온도의 함수로 조사하였다. PR 스펙트럼으로부터 조성비 x가 증가함에따라 시료의 띠간격 에너지가 증가하는 것을 관측하였다. 상온 PR 스펙트럼으로부터 시료내에 형성된 내부 전기장을 구하였다. 그리고 변조빔 세기의 증가에 따른 PR 신호의 세기는 점차 증가하는 반면에, 변조 주파수를 증가시킴에 따라 신호의 세기가 점차 감소함을 보였다. PR 신호의 온도 의존성 실험으로부터 띠간격 에너지의 변화 및 Varshni 계수 등을 구하여 CIGS 시료의 특성을 조사하였다.

• Korean Journal of Crystallography
• /
• v.10 no.2
• /
• pp.105-109
• /
• 1999

Ar 기류 하에서 Re(N-C6H3-2,6-i-Pr2)2Cl3(py) (1)과 propionaldehyde (C2H5CHO)가 반응하여 생성된 혼합물에서, [cis-ReCl4(py)(N-C6H3-2,6-i-Pr2)·(NH2-C6H3-2,6-i-Pr2)] (2)가 분리되었다. 이 화합물의 구조가 X-ray 회절법으로 규명되었다. 착물 2의 결정학 자료: 단사정계 공간군 P21/n, a=11.555(1) Å, b=27.066(3) Å, c=11.881(1) Å, β=117.991(8)°, Z=4, R(wR2)=0.0332(0.0851.

• Journal of the Korean Ceramic Society
• /
• v.36 no.5
• /
• pp.478-482
• /
• 1999

SrTiO3 :Al, Pr phosphor as an oxide compound phosphor is expect to be applied for a field emission display(FED). In this phosphor the excitation spectrum shows a different tendency according to an addition Al3+ and Pr3+ In this excitation spectrum the main peak at 359 nm represent excitation level of Pr3+(1S0longrightarrow1D2 transition) and the absorption characteristic according to Ti/Sr molar ratio is influenced by the structure symmetry. The emission spectrum exhibits the red luminescence with the radiative decay of the 1D2 states(1D2 longrightarrow3H4 transition) The concentration quenching phenomena at 1D2 state shows up as Al3+ and Pr3+ ion concentration increases.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.5
• /
• pp.422-426
• /
• 2006

[ $Sr_xCa_{(1-x)}TiO_3$ ] red phosphors doped with Pr(0.13 mol%) and Al(0.23 mol%) were synthesized by solid state reaction method. Change of crystal structure occurred in $Sr_xCa_{(1-x)}TiO_3:Pr,Al$ phosphors with increasing value of x. Green and red luminescence were observed from $SrTiO_3:Pr,Al$ phosphors at low temperature. However, only red luminescence in the case of $CaTiO_3:Pr,Al$ phosphors was measured at low temperature. The main cause of green luminescence was explained by the bandgap reduction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.9
• /
• pp.825-828
• /
• 2008

$Sr_xBa_{(1-x)}TiO_3$ red phosphors doped with Pr(0.13 mol%) and Al(O.23 mol%) were synthesized by solid state reaction method. Orthorhombic perovskite structure with increasing value of x in $Sr_xBa_{(1-x)}TiO_3$:Pr,Al phosphors changed to cubic perovskite structure. Emission bands at 615 nm and 492 nm in $Sr_{0.25}Ba_{0.75}TiO_3$:Pr,Al and $BaTiO_3$:Pr,Al phosphors were observed at room temperature. The main cause of green luminescence at 492 nm was explained by the change of the 4f5d band.

• Mycobiology
• /
• v.50 no.6
• /
• pp.457-466
• /
• 2022

Epicoccum nigrum is a saprophytic or endophytic fungus that is found worldwide. Because of the antagonist effects of E. nigrum on many plant pathogens, current studies on E. nigrum have focused on the development of biological control agents and the utilization of its various metabolites. In this study, E. nigrum was collected from a wheat field, and its genetic diversity was analyzed. Phylogenetic analyses identified 63 isolates of E. nigrum divided into seven groups, indicating a wide genetic diversity. Isolates antagonized the wheat pathogen Fusarium graminearum, and reduced disease symptoms caused by F. graminearum in wheat coleoptiles. Moreover, pretreatment of wheat coleoptiles with E. nigrum induced the upregulation of pathogen-related (PR) genes, PR1, PR2, PR3, PR5, PR9, and PR10 in wheat coleoptiles responding to F. graminearum invasion. Overall, this study indicates that E. nigrum isolates can be used as biological pathogen inhibitors applied in wheat fields.

• Proceedings of the Korean Institute of Intelligent Systems Conference
• /
• 1998.06a
• /
• pp.413-416
• /
• 1998

In this paper we first show that uniform PR systems and half independent PR systems have same dynamics, and then an important property of this two kinds of systems is derived. The most important property of uniform PR systems is that they have the ability of classifying m-dimensional problabilistic vector into in classes. The significance of studying the dynamics of uniform PR systems are tried from the beginning with a uniform PR system.

• 대학교육
• /
• s.69
• /
• pp.92-101
• /
• 1994

현대 사회에서 PR이란 많은 문제에 대처하는 효율적인 방안임에는 틀림없으나 모든 문제를 해결하는 만능의 도구는 결코 아니다. 그러므로 효율적인 PR의 활용방안은 곧 그것이 대처하는 문제의 정확한 인식에 근거하고 있으므로 대학의 책임자들이 자기 조직의 문제점을 정확하게 인식하고 인정하는 것이 바로 건전한 대학 PR 활용의 출발점이 된다. "오늘날 많은 조직들이 어려움을 겪고 있는 이유는 그들이 문제를 해결할 수 없기 때문이 아니라 그들이 문제를 보려(인정)하지 않기 때문이다."라고 말한 가드너의 지적은 오늘날 대학사회에서도 그대로 적용된다.

• Proceedings of the Korea Contents Association Conference
• /
• 2012.05a
• /
• pp.397-398
• /
• 2012

본 연구는 대학 홍보 전략에 활용하고 있는 마케팅PR 전략 활동을 연구 목적에 따라 3가지의 유목을 분류하고 각 유형에 맞는 사례를 조사하여 분석하고자 한다.

• Korean Chemical Engineering Research
• /
• v.44 no.5
• /
• pp.498-504
• /
• 2006

The etch rates of photoresist (PR) and the etch selectivity of $SiO_2$ to PR in a high density $CHF_3$ plasma were investigated at different ion-incident angles and bias voltages. A Faraday cage was employed for the accurate control of ion-incident angles. The ion energy was controlled by changing bias voltages. The etch rate of $SiO_2$ continuously decreased with ion-incident angles but the etch rate of PR remained constant up to the middle angle region and decreased afterwards. The etch rates of $SiO_2$ normalized to those at $0^{\circ}$ incident angle changed with the ion-incident angle following a cosine(${\theta}$) curve. On the other hand, the normalized etch rates of the PR changed showing a drastic over-cosine shape in the middle angle region. The etch selectivity of $SiO_2$ to PR decreased with an increase in the ion-incident angle because the etch yields of PR were enhanced by physical sputtering in the middle angle region compared to the case of $SiO_2$ etching. The etch selectivity of $SiO_2$ to PR decreased with an increase in the bias voltage at nearly all ion-incident angles.