• Journal of Radiation Protection and Research
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• v.48 no.3
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• pp.124-130
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• 2023

Background: When bipolar junction transistors (BJTs) are used as switches, their switching characteristics can be deteriorated because the recombination time of the minority carriers is long during turn-off transient. When BJTs operate as low frequency switches, the power dissipation in the on-state is large. However, when BJTs operate as high frequency switches, the power dissipation during switching transients increases rapidly. Materials and Methods: When silicon (Si) BJTs are irradiated by fast neutrons, defects occur in the Si bulk, shortening the lifetime of the minority carriers. Fast neutron irradiation mainly creates displacement damage in the Si bulk rather than a total ionization dose effect. Defects caused by fast neutron irradiation shorten the lifetime of minority carriers of BJTs. Furthermore, these defects change the switching characteristics of BJTs. Results and Discussion: In this study, experimental results on the switching characteristics of a pnp Si BJT before and after fast neutron irradiation are presented. The results show that the switching characteristics are improved by fast neutron irradiation, but power dissipation in the on-state is large when the fast neutrons are irradiated excessively. Conclusion: The switching characteristics of a pnp Si BJT were improved by fast neutron irradiation.

• Proceedings of the KIPE Conference
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• 2007.07a
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• pp.232-234
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• 2007

본 논문은 Z-Source 인버터의 효율 증대를 위해 기존의 스위칭 회로에의 lower-arm의 스위칭 소자를 BJT구성하여, 스위칭 회로가 FET와 BJT로 구성된 Z-Source 인버터 구조를 제안하였으며, 제안된 인버터 구조에 적합한 스위칭 신호를 분석 및 스위칭 손실의 효율을 개선하였다. 또한 본 논문을 PSIM 시뮬레이션과 실험을 통해 제안된 방식의 성능을 확인하였다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.765-768
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• 2003

본 논문에서는 Noise Figure, IP3, Gain, power dissipation들을 최대한 고려하여 간단하면서도 훌륭한 성능을 보이는 PCS용 1.9 GHz CDMA Low Noise Amplifier를 설계하였다. 비록 본 논문에서는 특정한 트랜지스터를 이용하여 설계하였지만, 다른 트랜지스터를 사용하여 이러한 방법으로 설계하여도 무관할 것이다.

• Journal of Power Electronics
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• v.12 no.2
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• pp.242-248
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• 2012

Self oscillating current fed push pull resonant inverters can be controlled without using special drivers. Dc current flows through the choke coil and the power switches, although the driving signals of the power switches are sinusoidal. When the base current is near zero, the transistors cannot be operated in switching mode. Hence higher switching power losses and instantaneous peak power during off transitions are observed. In this study, an alternative design has been proposed to overcome this problem. A prototype circuit has been built which provides dc bias current to the base of the transistors. Experimental results are compared with theoretical calculations to demonstrate the validity of the design. The proposed design decreases the peak and average power losses by about 8 times, when compared to conventional designs.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.7
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• pp.729-736
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• 2011

In this paper, we propose a varactor-diodeless voltage-controlled oscillator operating at X-band, and verify the possibility of applying to a receiver for microwave radar signal detection applications. The proposed VCO is realized by only single RF BJT device as a varactor diode is substitued by a intrinsic collector-base PN-junction of the active device which is used to generate negative resistance. The fabricated VCO meets the specification of the receiver, which has a 11.20~11.75 GHz tuning bandwidth with respect to the tuning voltage, 1.0~7.0 V, output power of 9.0~12.0 dBm and linear frequency tuning performance.

• Proceedings of the KIPE Conference
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• 2000.07a
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• pp.509-512
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• 2000

LCD displays for flat monitors the backlit using Cold Cathode Flourescent Lamps(CCFLs) In this paper a low-cost series resonant half-bridge inverter for LCD backlight is proposed as a CCFL ballast. It is regulated by asymmetric control for its fixed frequency soft switching model. The attractiveness of this topology is primarily its low cost because of using BJT switches and reduction of anti-parallel diode. Design procedure and experimental verification from 5W 15"LCD backlight are presented.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.164-165
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• 2007

파워 IC 공정은 CMOS 공정과 달리 내압별로 다양한 소자가 제공되며 BJT와 DMOS 구조를 포함할 경우 매스크가 20장이 넘는 매우 복잡한 공정이다. 본 논문에서는 국내의 파운드리 기업인 동부하이텍과 매그나칩사에서 제공하는 파워 IC 공정 및 제공되는 소자의 특성을 비교 분석하였다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.2
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• pp.152-158
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• 2004

A low phase noise frequency synthesizer at X-Band which employs the subharmonic injection locking was designed and tested. The designed frequency synthesizer consists of a 1.75 GHz master oscillator - which also operates as a harmonic generator - and a 10.5 GHz slave oscillator. A 1.75 GHz master oscillator based on PLL technique used two transistors - one constitutes the active part of VCO and the other operates as a buffer amplifier as well as harmonic generator. The first stage operates a fixed locked oscillator and using the BJT transistor whose cutoff frequency is 45 GHz, the second stage is designed, operating as a harmonic generator. The 6th harmonic which is produced from the harmonic generator is injected into the following slave oscillator which also behaves as an amplifier having about 45 dB gain. The realized frequency synthesizer has a 7.4 V/49 mA, -0.5 V/4 mA of the low DC power consumption, 4.53 dBm of output power, and a phase noise of -95.09 dBc/Hz and -108.90 dBc/Hz at the 10 kHz and 100 kHz offset frequency, respectively.

• Proceedings of the KIEE Conference
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• 2001.11c
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• pp.34-37
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• 2001

In this paper, we designed and implemented the 60W DC characteristic measurement system for semiconductor devices. The proposed system is composed of 2 SMU(Source and Measure Unit)s, 2 HPU(High power Unit)s, 2VSU(Voltage Source Unit)s, and 2 VMU(Voltage Measurement Unit)s. HPU can source/measure voltage from -200V to 200V and source/measure current from -3A to 3A within 60W. Experimental results show that the implemented system can measure the power devices such as power BJT, regulator IC, and voltage detector.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.359-359
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• 2010

IGBT(Insulated Gate Bipolar Transistor) 란 MOS(Metal Oxide Silicon) 와 Bipolar 기술의 결정체로 낮은 순방향 손실(Low Saturation)과 빠른 Speed를 특징으로 기존의 Thyristor, BJT, MOSFET 등으로 실현 불가능한 분양의 응용처를 대상으로 적용이 확대 되고 있고, 300V 이상의 High Power Application 영역에서 널리 사용되고 있는 고효율, 고속의 전력 시스템에 있어서 필수적으로 이용되는 Power Device이다. IGBT는 출력 특성 면에서 Bipolar Transistor 이상의 전류 능력을 가지고 있고 입력 특성 면에서 MOSFET과 같이 Gate 구동 특성을 갖기 때문에 High Switching, High Power에 적용이 가능한 소자이다. 반면에, Conventional IGBT는 MOSFET과 달리 IGBT 내부에 Anti-Parallel Diode가 없기 때문에 Inductive Load Application 적용시에는 별도의 Free Wheeling Diode가 필요하다. 그래서, 본 논문에서 별도의 Anti-Parallel Diode의 추가 없이도 Inductive Load Application에 적용 가능한 RC IGBT를 적용하여 600V/15A급 Three Phase Inverter Module을 제안 하고자 한다.