• Korean Security Journal
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• no.41
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• pp.37-66
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• 2014

In recent years, with the development of computers and electronics, electronics and communication technology in a growing and each part is dependent on the cross-referencing makes all electronic equipment is obsolete due to direct or indirect damage EMP. Korea and the impending standoff North Korea has a considerable level of technologies related to the EMP, EMP weapons you already have or in a few years, the development of EMP weapons will complete. North Korea launched a long-range missile and conducted a nuclear test on several occasions immediately after, when I saw the high-altitude nuclear blackmail has been strengthening the outright offensive nuclear EMP attacks at any time and practical significance for the EMP will need offensive skills would improve. At this point you can predict the damage situation of Korea's security reality that satisfy the need, more than anything else to build a protective system of the EMP. The scale of the damage that unforeseen but significant military damage and socio-economic damage and fatalities when I looked into the situation which started out as a satellite communications systems and equipment to attack military and security systems and transportation, finance, national emergency system, such as the damage elsewhere. In General, there is no direct casualties reported, but EMP medical devices that rely on lethal damage to people who can show up. In addition, the State power system failure due to a power supply interruption would not have thought the damage would bring State highly dependent on domestic power generation of nuclear plants is a serious nuclear power plant accident in the event of a blackout phenomenon can lead to the plant's internal problems should see a forecast. First of all, a special expert Committee of the EMP, the demand for protective facilities and equipment and conduct an investigation, he takes fits into your budget is under strict criteria by configuring the contractors should be sifting through. He then created the Agency for verification of performance EMP protection after you have verified the performance of maintenance, maintenance, safety and security management, design and construction company organized and systematic process Guard facilities or secret communications equipment and perfect for the EMP, such as protective equipment maneuver system should take.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.410-410
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• 2013

Next-generation nonvolatile memory (NVM) has attracted increasing attention about emerging NVMs such as ferroelectric random access memory, phase-change random access memory, magnetic random access memory and resistance random access memory (RRAM). Previous studies have demonstrated that RRAM is promising because of its excellent properties, including simple structure, high speed and high density integration. Many research groups have reported a lot of metal oxides as resistive materials like TiO2, NiO, SrTiO3 and ZnO [1]. Among them, the ZnO-based film is one of the most promising materials for RRAM because of its good switching characteristics, reliability and high transparency [2]. However, in many studies about ZnO-based RRAMs, there was a problem to get lower current level for reducing the operating power dissipation and improving the device reliability such an endurance and an retention time of memory devices. Thus in this paper, we investigated that highly reproducible bipolar resistive switching characteristics of W doped ZnO RRAM device and it showed low resistive switching current level and large ON/OFF ratio. This may be caused by the interdiffusion of the W atoms in the ZnO film, whch serves as dopants, and leakage current would rise resulting in the lowering of current level [3]. In this work, a ZnO film and W doped ZnO film were fabricated on a Si substrate using RF magnetron sputtering from ZnO and W targets at room temperature with Ar gas ambient, and compared their current levels. Compared with the conventional ZnO-based RRAM, the W doped ZnO ReRAM device shows the reduction of reset current from ~$10^{-6}$ A to ~$10^{-9}$ A and large ON/OFF ratio of ~$10^3$ along with self-rectifying characteristic as shown in Fig. 1. In addition, we observed good endurance of $10^3$ times and retention time of $10^4$ s in the W doped ZnO ReRAM device. With this advantageous characteristics, W doped ZnO thin film device is a promising candidates for CMOS compatible and high-density RRAM devices.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.3
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• pp.578-584
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• 2017

$SiO_2$ buffer layer (100 nm) has been deposited on PET substrate by electron beam evaporation. And then, IZTO (In-Zn-Sn-O) thin film has been deposited on $SiO_2$/PET substrate with different RF power of 30 to 60 W, working pressure, 1 to 7 mTorr, by RF magnetron sputtering. Structural, electrical and optical properties of IZTO thin film have been analyzed with various RF powers and working pressures. IZTO thin film deposited on the process condition of 50 W and 3 mTorr exhibited the best characteristics, where figure of merit was $4.53{\times}10^{-3}{\Omega}^{-1}$, resistivity, $4.42{\times}10^{-4}{\Omega}-cm$, sheet resistance, $27.63{\Omega}/sq.$, average transmittance (400-800 nm), 81.24%. As a result of AFM, all the IZTO thin film has no defects such as pinhole and crack, and RMS surface roughness was 1.147 nm. Due to these characteristics, IZTO thin film deposited on $SiO_2$/PET structure was found to be a very compatible material that can be applied to the next generation flexible display device.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.4
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• pp.674-682
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• 2018

Large industrial motors require a large area because of the high risk of shutdown accidents and large industrial accidents due to the lowering of the dielectric strength of the armature windings and overheating problems. Therefore, there is a demand for a large-capacity motor that has small size, light weight, and excellent dielectric strength compared with conventional motors. Superconducting motors have advantages of high efficiency and output power, low size, low weight, and improved stability. This results from greatly increasing the magnetic field generation by using superconductive field coils in rotating machines such as generators and motors. It is very important to design and analyze the cooling system to lower the critical temperature of the wires to achieve superconducting performance. In this study, a field loss analysis and low-temperature heat transfer analysis of the cooling system were performed through the conceptual design of a 100-HP high-temperature superconducting synchronous motor. The field loss analysis shows that a uniform pore magnetic flux density appears when high-temperature superconducting wire is used. The low-temperature heat transfer analysis for gaseous neon and liquid neon showed that a flow rate of 1 kg/min of liquid neon is suitable for maintaining low-temperature stability of the high-temperature superconducting wire.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.11
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• pp.1275-1284
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• 2010

100 MHz bandwidth and 1 Gbit/s data speed are needed in LTE-advanced for the next generation mobile communication system. Therefore, spectrum aggregation method has been studied recently to extend usable frequency bands. Also bandwidth utilization is increased since vacant frequencies are used to communicate. However, transceiver structure requires the digital RF and SDR. Therefore, frequency synthesizer and PA must operate over wide-bandwidth and RF impairments also increases in transceiver. Uplink of LTE advanced uses DFT-S OFDM using plural power amplifier. The effect of ICI increases in frequency domain of receiver due to phase noise and IQ imbalance. In this paper, we analyze influences of ICI in frequency domain of receiver considering phase noise and IQ imbalance in multiband system. Also, we separate phase noise and IQ imbalance effect from channel response in frequency domain of uplink system. And we propose a method to estimate the channel exactly and to compensate IQ imbalance and phase noise. Simulation result shows that the proposed method achieves the 2 dB performance gain of BER=$10^{-4}$.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.8
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• pp.1105-1111
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• 2010

The Korea Atomic Energy Research Institutes has been developing the SMART (System integrated Modular Advanced ReacTor), an environment-friendly nuclear reactor for the generation of electricity and to perform desalination. SMART reactors can be exposed to various external and internal loads caused by seismic and coolant flows. The CRDM(control rod drive mechanism), one of structures of the SMART, is a component which is adjusting inserting amount of a control rod, controlling output of reactor power and in an emergency situation, inserting a control rod to stop the reactor. The purpose of this research is performing the analysis of dynamic characteristic to ensure safety and integrity of structure of CRDM. This paper presents two FE-models, 3-D solid model and simplified Beam model of the CRDM in the coolant, and then compared the results of the dynamic characteristic about the two FE-models using a commercial Finite Element tool, ABAQUS CAE V6.8 and ANSYS V12. Beam 4 and beam 188 of simplified-model were also compared each other. And simplified model is updated for accuracy compare to 3-D solid.

• Fire Science and Engineering
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• v.24 no.5
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• pp.136-141
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• 2010

The purpose of this study is to examine the structure and heat generation mechanism of low voltage switches used to turn on or off the power supply to an indoor lighting system and investigate how the fixtures and movable contacts of the switches are damaged depending on the types of energy sources in order to secure the judgment base for expected PL disputes. Based on the Korean Standard (KS) testing method for incombustibility, this study applied a general flame to the switch. In addition, current was supplied to the switch using the PCITS (Primary Current Injection Test System). The ambient temperature and humidity were maintained at $22{\pm}2^{\circ}C$ and 40~60% respectively while performing the test. It is thought that the switch generated heat due to a defective connection of the wire and clip, insulation deterioration and defective contact of the movable contact, etc. The surface of the switch damaged by the general flame was uniformly carbonized. When the flame source was removed, the fire on the switch was extinguished naturally. From the result obtained by disassembling the switch carbonized by the general flame, it could be seen that fixtures and movable contacts remained in comparatively good shape but the enclosure, clip support, movable contact, indicating lamp, etc. showed carbonization and discoloration. In the case of the switch damaged by overcurrent, the clip connecting the wires, clip support, etc. showed almost no trace of damage, but the fixtures, movable contact, indicating lamp, etc. were severely carbonized. That is, the sections with high contact resistance were intensively damaged and showed a damage pattern indicating that carbonization progressed from the inside to the outside. Therefore, it is possible to judge the initial energy source by analyzing the characteristics of the carbonization pattern and the metal fixtures of damaged switches.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.6
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• pp.447-458
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• 2003

A high speed multiplier is essential basic building block for digital signal processors today. Typically iterative algorithms in Signal processing applications are realized which need a large number of multiply, add and accumulate operations. This paper describes a macro block of a parallel structured multiplier which has adopted a 32$\times$32-b regularly structured tree (RST). To improve the speed of the tree part, modified partial product generation method has been devised at architecture level. This reduces the 4 levels of compression stage to 3 levels, and propagation delay in Wallace tree structure by utilizing 4-2 compressor as well. Furthermore, this enables tree part to be combined with four modular block to construct a CSA tree (carry save adder tree). Therefore, combined with four modular block to construct a CSA tree (carry save adder tree). Therefore, multiplier architecture can be regularly laid out with same modules composed of Booth selectors, compressors and Modified Partial Product Generators (MPPG). At the circuit level new Booth selector with less transistors and encoder are proposed. The reduction in the number of transistors in Booth selector has a greater impact on the total transistor count. The transistor count of designed selector is 9 using PTL(Pass Transistor Logic). This reduces the transistor count by 50% as compared with that of the conventional one. The designed multiplier in 0.25${\mu}{\textrm}{m}$ technology, 2.5V, 1-poly and 5-metal CMOS process is simulated by Hspice and Epic. Delay is 4.2㎱ and average power consumes 1.81㎽/MHz. This result is far better than conventional multiplier with equal or better than the best one published.

• International Journal of Fluid Machinery and Systems
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• v.10 no.1
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• pp.40-46
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• 2017

Small valves including ball valves, gate valves and butterfly valves have been adopted in the fields of steam power generation, petrochemical industry, carriers, and oil tankers. Butterfly valves have normally been applied to fields where in narrow places installing the existing valves such as gate valves and ball valves have proven difficult due to the surrounding area and the heavier of these valves. Butterfly valves are used to control the mass flow of the piping system under low pressure by rotating the circular disk installed inside. The butterfly valve is benefitted by having simpler structure in which the flow is controlled by rotating the disc circular plate along the center axis, whereas the weight of the valve is light compared to the gate valve and ball valve above-mentioned, as there is no additional bracket supporting the valve body. The manufacturing company needs to acquire the performance and life test equipment, in the case of adopting the improving factors to detect leakage and damage on the seat of the valve disc. However, small companies, which are manufacturing the industrial valves, normally sell their products without the life test, which is the reliability test and environment test, because of financial and manpower problems. Furthermore, the failure mode analysis of the products failed in the field is likewise problematic as there is no system collecting the failure data on sites for analyzing the failures of valves. The analyzing and researching process is not arranged systematically because of the financial problem. Therefore this study firstly tried to obtain information about the failure data from the sites, analyzed the failure mode based on the field data collected from the customers, and then obtained field data using measuring equipment. Secondly, we designed and manufactured the performance and life test equipment which also have the real time monitoring system with the naked eye for the butterfly valves. The concept of this equipment can also be adopted by other valves, such as the ball valve, gate valve, and various others. It can be applied to variously sized valves, ranging from 25 mm to large sized valves exceeding 3000 mm. Finally, this study carries out the life test with square wave pressure, using performance and life test equipment. The performance found out that the failures from the real time monitoring system were good. The results of this study can be expanded to the other valves like ball valves, gate valves, and control valves to find out the failure mode using the real time monitoring system for durability and performance tests.

• Journal of Sensor Science and Technology
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• v.7 no.1
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• pp.67-72
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• 1998

The crystallized CuPc and PbTe films are formed by thermal evaporation and pulsed ArF excimer laser ablation. Structural and electrical properties of thin film is observed by XRD and current-voltage(I-V) curves. From XRD analysis, both PbTe and CuPc thin films show a-axis oriented structure. For the measurement of photovoltaic effect, the transverse current-voltage curve of CuPc/Si, PbTe/Si and PbTe/CuPc/Si junctions have been analyzed in the dark and under illumination. The PbTe/CuPc/Si junction exthibits a strong photovoltaic characteristics with short circuit current($J_{sc}$) of $25.46\;mA/cm^{2}$ and open-circuit voltage($V_{oc}$) of 170 mV. Quantum efficiency and power conversion efficiency are calculated to be 15.4% and $3.46{\times}10^{-2}$, respectively. Based on the results of QE and ${\eta}$, the photocurrent process of PbTe/CuPc/Si junction can be explained as following three effective steps; photocarrier generation in the CuPc layer, carrier separation at PbTe/CuPc interface, and finally a transportation of electrons through the PbTe layer.