• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.7 no.4
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• pp.147-150
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• 2014

In this paper, pulse current type power supply for laser diode dirver is discussed. High speed high power laser has been using widely because it becomes using on medical or manufacturing equipment, but researches have not being occurred actively. Current profiling method is proposed for improved lifetime expectancy of laser diode(LD). The current waveform of driving LD is most important factor of the performance and lifetime of LD. The proposed method improves shape and stability of current waveforms, thus will effect right direction of lifetime expectation.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.12
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• pp.2212-2217
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• 2010

Previous studies have been focused on the voltage of Bypass diode and Isc(Short Circuit Current) of the influenced solar cell. The Bypass diode starts working when it gets the reverse applied voltage. Previous studies have only concentrated on Isc of the influenced solar cell and Imp of PV module to explain the bypassing performance. PV module is usually working together with inverter having MPPT(Maximum Power Point Tracking) function for best performance. bypassing point is regulated by MPPT function of inverter. In this paper, simulation results of Bypass diode in PV module have been analyzed to represent the relationship of the bypassing point with the composition of PV module. From the results, the more cells are connected with each string, the earlier bypassing performance happens under the fixed number of strings. As diode groups increase or irradiation decreases, the bypassing performance starts fast.

• Transactions on Electrical and Electronic Materials
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• v.14 no.1
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• pp.47-51
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• 2013

A high power MOSFET switch based on a 0.35 ${\mu}m$ CMOS process has been developed for the protection IC of a rechargeable battery. In this process, a vertical double diffused MOS (VDMOS) using 3 ${\mu}m$-thick epi-taxy layer is integrated with a Zener diode. The p-n+Zener diode is fabricated on top of the VDMOS and used to protect the VDMOS from high voltage switching and electrostatic discharge voltage. A fully integrated digital circuit with power devices has also been developed for a rechargeable battery. The experiment indicates that both breakdown voltage and leakage current depend on the doping concentration of the Zener diode. The dependency of the breakdown voltage on doping concentration is in a trade-off relationship with that of the leakage current. The breakdown voltage is obtained to exceed 14 V and the leakage current is controlled under 0.5 ${\mu}A$. The proposed integrated module with the application of the power MOSFET indicates the high performance of the protection IC, where the overcharge delay time and detection voltage are controlled within 1.1 s and 4.2 V, respectively.

• The Transactions of the Korean Institute of Power Electronics
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• v.16 no.5
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• pp.457-465
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• 2011

The fault analysis and detecting algorithm for a 3 phase diode rectifier is proposed. The 3 phase dioderectifier is used for the AC power rectifier of the PWM inverter. The input power or diode faults cause theripples of the DC voltage, degradation of the control performance and life shortening of the DC link capacitor.In this paper, the ripple of the DC voltage is mathematically analyzed for the earth fault of input power andopen circuit fault of the diode, respectively. The fault detection and type of fault can be obtained by comparingthe average DC voltage and the instant DC voltage which is sampled with 6 times of grid frequency. Theproposed method can be easily applicable and doesn't require additional circuit. The experimental and simulationresults are presented to verify the validity of the proposed method.

• Korean Journal of Optics and Photonics
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• v.14 no.3
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• pp.292-297
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• 2003

A diode-pumped single-mode Nd:YV $O_4$ green laser was developed. Frequency doubling of the laser was achieved by using an intracavity KTP generated green beam (532 nm). By comparing the diode laser spectrum with absorption spectrum of the Nd:YV $O_4$ crystal, we found optimal operating temperature of the diode laser. From output power measured for various mirror curvatures and cavity lengths, we found the optimal matching of TE $M_{00}$ mode with the pump beam gives the best efficiency. When the pump power was 1.9 W, 80 ㎽ of TE $M_{00}$ mode green beam was obtained. We tried to get a single longitudinal mode lasing as the fluctuation of the laser power was caused by the shift of longitudinal modes and the beating between the modes. We tested the intracavity etalon method and birefringent filter method for single mode operation. The etalon method resulted in the best single mode output power of 60 ㎽. The power fluctuation of the single-mode laser was reduced to 1/10 of that of the multi-mode laser.

• Journal of Electrical Engineering and Technology
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• v.13 no.6
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• pp.2441-2446
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• 2018

This paper presents a radio frequency-to-direct current (RF-to-DC) converter for special RF power harvesting application at 915 MHz. The major featured components of the proposed RF-to-DC converter is the combination of a cross-coupled rectifier and an active diode: first, the cross-coupled rectifier boosts the input voltage to desired level, and an active diode blocks the reverse current, respectively. A prototype was implemented using $0.18{\mu}m$ CMOS technology, and the performance was proven from the fact that the targeted RF harvesting system's full-operation with higher power efficiency; even if the system's input power gets lower (e.g., from nominal 0 to min. -12 dBm), the proposed RF-to-DC converter constantly provides 1.47 V, which is exactly the voltage level to drive follow up system components like DC-to-DC converter and so on. And, maximum power conversion efficiency is 82 % calculated from the 0 dBm input power, 2.3 mA load current.

• Journal of Advanced Marine Engineering and Technology
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• v.31 no.8
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• pp.975-982
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• 2007

The single-phase switched reluctance motor(SRM) drive requires DC source which is generally supplied through a rectifier connected with a commercial source. The rectifier is consist of a diode full bridge and a filter circuit. Usually the filter circuit uses capacitor with large value capacitance to reduce ripple component of DC power. Although the peak torque ripple of SRM is small, the short charge and discharge current of the filter capacitor draws the low power factor and system efficiency. A modified single phase SRM drive system is presented in this paper, which includes drive circuit realizing reduction of torque ripple and improvement of power factor. In the proposed drive circuit, one switching part and diode which can separate the output of AC/DC rectifier from the filter capacitor is added. Also, a upper switch of drive circuit is exchanged a diode in order to reduce power switching device. Therefore the number of power switch device is not changed, two diodes are only added in the SRM drive. To verify the proposed system, some simulation and experimental results are presented.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.10C
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• pp.993-998
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• 2002

At Power amplifier, distortion of output is appeared because of non-linearlity, so we must study method of compensation for non-linearity. In this paper, it was studied about the characteristic of predistorter using serial schottky diode for an amplifier. As a result, we confirmed that power amplifier was able to linearize when we put predistorter using non-linearity of schottky diode before power amplifier. When input carrier level was low, input carrier was delivered directly into power amplifier but input carrier level was high, input carrier was delivered into power amplifier through predistorter with suppressed level. As a result power amplifier always was at saturation region. Through simulation using serenade 8.0, we have concluded that efficiency was improved about 3%, and predistorter got best linearity at 1.8㎓ between 800㎒∼2.2㎓.

• Electrical & Electronic Materials
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• v.9 no.5
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• pp.498-505
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• 1996

In the present work, we have developed the simulator to optimize the process conditions of the AR(antireflection) and HR(high-reflection) coatings for the high power laser diode. The simulator can run on the PC. After making the simple optical model, we establish the Maxwell equations for the model by the operator conversion. By using the Mathematica, we derive a matrix for the multilayer system by applying the equations to the model and optimize the AR and HR coating process conditions by obtaining the reflection rate from the matrix. We also prove the validity of the simulator by comparing the simulation with the characteristics of the laser diode which is AR and HR coated according to the optimized conditions.

• Journal of the Optical Society of Korea
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• v.8 no.1
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• pp.13-16
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• 2004

A widely tunable SG-DFB (Sampled Grating Distributed Feedback) laser diode is proposed and its feasibility is confirmed through simulation. The new SG-DFB laser diode is composed of a pair of sampled gratings, some parts of which are gain sections and the other parts of which are phase control sections. It is shown that a few tens of nanometers can be tuned through the adjustment of two currents into the phase control sections. Higher output power is expected compared with a SG-DBR laser diode with similar parameters. The dynamic single mode operation is also observed in the time-domain simulation.