• Transactions on Electrical and Electronic Materials
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• v.17 no.6
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• pp.359-362
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• 2016

In the PV (Photovoltaic) power system, a junction box collects the DC voltage generated from the PV module and transfers it to the PCS (power conditioning system). The junction box prevents damage caused by the voltage difference between the serially connected PV modules and provides convenience while repairing or inspecting the PV array. In addition, the junction box uses the diode to protect modules from the inverse current when the PV power system and electric power system are connected for use. However, by using the reverse blocking diode, heat is generated within the junction box while generating electric power, which decreases the generating efficiency, and causes short circuit and electric leakage. In this research, based on the purpose of improving the performance of the PV module by decreasing the heat generation within the junction box, a junction box with a built-in bypass circuit was designed/manufactured so that a certain capacity of current generated from the PV module does not run through the reverse blocking diode. The manufactured junction box was used to compare the electric power and heating power generated when the circuit was in the bypass/non-bypass modes. It was confirmed that the electric power loss and heat generation indicated a decrease when the circuit was in the bypass mode.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.8
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• pp.1386-1391
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• 2000

In this paper, the method to linearize the non-linearity of diode and to compensate the characteristics change of diode with the temperature is studied. Square root circuit is used to linearize the non-linearity of diode about the input power, and two identical diodes and OP-Amps, which have variable reference, are used to compensate the characteristic change of diode with the temperature. As the result, designed diode power detector (with the square root circuit and temperature compensation circuit) can detect the output power linearly with the 0.23 $\pm$0.025V/dBm rate in the case the input power is greater than -6 dBm, and the designed circuit operates stably with no variation in the output data about the temperature change from the room temperature to 8$0^{\circ}C$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.5
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• pp.471-482
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• 2015

In this paper, design and implementation of the 94 GHz Gunn oscillator and the evaluation of the maximum power of the Gunn diode used in the oscillator are presented. The 94 GHz Gunn oscillator is used InP Gunn diode and designed employing a WR-10 waveguide. The designed oscillator is fabricated through machining and its performance is measured. The fabricated oscillator shows an oscillation frequency of 95 GHz, output power of 12.64 dBm, and phase noise of -92.7 dBc/Hz at 1 MHz offset frequency. To evaluation the maximum power of the InP Gunn diode used in oscillator, the oscillator structure is modified to a structure having a diaphram. The height of thick diaphram which is used in the oscillator is varied. As a result, an oscillator has several different load impedances, which makes it possible to plot $G_L-V^2$ plot at the post plane. Using the $G_L-V^2$ plot, the maximum power of used Gunn diode including post is computed to be 16.8 dBm. Furthermore using the shorted and zero bias Gunn diode, the post loss used for DC biasing can be computed. Using the two losses, The maximum power of a InP Gunn diode is computed to be 18.55 dBm at 95 GHz. This result is close to a datasheet.

• Journal of Power Electronics
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• v.17 no.2
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• pp.561-569
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• 2017

Power converter design requires simulation accuracy. In addition to the requirement of accurate models of power semiconductor devices, this paper highlights the role of considering a very good description of the converter circuit layout for an accurate simulation of its electrical behavior. This paper considers a simple experimental circuit including one switching cell where a MOSFET transistor controls the diode under test. The turn-off transients of the diode are captured, over which the circuit wiring has a major influence. This paper investigates the necessity for accurate modeling of the experimental test circuit wiring and the MOSFET transistor. It shows that a simple wiring inductance as the circuit wiring representation is insufficient. An adequate model and identification of the model parameters are then discussed. Results are validated through experimental and simulation results.

• Laser Solutions
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• v.8 no.3
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• pp.21-26
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• 2005

A bonding process between tape-carrier package and a glass panel with anisotropic conductive film (ACF) has been investigated by making use of high power diode laser as a heat source for cure. The results from modeling of process and from optical properties of layers showed that heat absorbed from polyimide film surface and ACF layer is dominant source of curing during laser illumination. Laser ACF bonding has better bonding quality than conventional bonding in view of peel strength, flatness, pressure unbalance and processing time. New ACF bonding processes by making use of high power diode laser are proposed.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.3 s.32
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• pp.71-76
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• 2004

The power consumption of TEC for Laser diode cooling was predicted by 3-D FEM simulation and verified by experiment. The operating conditions such as power consumption of Laser diode, set temperature, ambient temperature, resistance of thermal path was considered to estimate the TEC power consumption. Using 3-D FEM simulation, the relation between TEC configuration defined by the pellet dimension and the number and power consumption was investigated for low power consumption scheme. As a result, as the thermal resistance of the pellet increased, the power consumption decreased.

• Journal of Power Electronics
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• v.14 no.2
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• pp.265-270
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• 2014

In terms of power loss, a MOSFET has two advantages over an IGBT with an antiparallel diode: purely resistive without an offset voltage in conduction and no tail current at turn-off. However, the reverse recovery characteristic of the body diode is so poor that MOSFETs have not yet been available for high-voltage power converters with bidirectional power flow legs. This paper introduces how MOSFETs can be fully applied to high-voltage power converters with bidirectional power flow legs in order to achieve high efficiency. With a bidirectional DC-DC converter with one leg as the simplest example, the basic circuit topology and operating principle are described in detail. The high efficiency and stable operation of the proposed converter are validated through experiments with a 1.5 kW prototype.

• Proceedings of the KIPE Conference
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• 2014.07a
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• pp.59-60
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• 2014

In this paper, development of laser diode driver with 2.5kW rating is presented. The driver is configured with interleaved PFC converter, high frequency full bridge DC-DC converter, two laser diode drivers and ${\mu}$-processor based controller. The system has two laser diode drivers for providing high current and low current. High current driver delivers normal output power of diode; low current driver is for providing critical current of diode for long lifetime. Computer simulation and experiment was performed for verification, as the results, developed driver performs well.

• Journal of Power Electronics
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• v.16 no.2
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• pp.815-822
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• 2016

The efficiency of light-emitting diode (LED) devices is a significant factor that reflects the capability of these devices to convert electrical power into optical power. In this study, a method for estimating the efficiency of LED devices is proposed. An efficiency model and a heat power model are established as convenient tools for LED performance evaluation. Such models can aid in the design of LED drivers and in the reliability evaluation of LED devices. The proposed estimation method for the efficiency and heat power of LED devices is verified by experimentally testing two types of commercial LED devices.

• Journal of Electrical Engineering and Technology
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• v.13 no.1
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• pp.333-344
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• 2018

This proposed paper aims for the high efficiency contactless power transfer in household dc power distribution. A 300 W five-level diode clamped multi-level converter with 300 Vdc input dc link bus is employed for the power transferring task and the output voltage range is controlled at 48 Vdc. The inner and outer solenoid coils are used for inductive power transfer (IPT) transformer with the 200 kHz switching frequency for designed power density. Therefore, to achieve the converter efficiency above 95%, the LLC series resonant with fundamental harmonic analysis (FHA) and the calculated switching angles are used as an optimized tool for designing the system resonant tank. The validations of this approached topology are illustrated in both MATLAB/Simulink simulation and implementation.