1 |
J. C. W. Lam and P. K. Jain, “A high power factor, electrolytic capacitor-less ac-input LED driver topology with high frequency pulsating output current,” IEEE Trans. Power Electron., Vol. 30, No. 2, pp. 943-955, Feb. 2015
DOI
|
2 |
X. H. Tao and S. Y. R. Hui, “Dynamic photo-electro-thermal theory for light-emitting diode systems,” IEEE Trans. Ind. Electron., Vol. 59, No. 4, pp. 1751-1759, Apr. 2012.
DOI
|
3 |
Y. Xi, J. Q. Xi, T. Gessmann, J. M. Shah, J. K. Kim, E. F. Schubert, and A. A. Allerman, “Junction and carrier temperature measurements in deep-ultraviolet light emitting diodes using three different methods,” Appl. Phys. Lett., Vol. 86, No. 3, pp. 1907-1909, Jan. 2005.
DOI
|
4 |
H. T. Chen, S. C. Tan, and S. Y. R. Hui, “Color variation reduction of GaN-based white light-emitting diodes via peak-wavelength stabilization,” IEEE Trans.Power Electron., Vol. 29, No. 7, pp. 3709-3719, Jul. 2014.
|
5 |
H. T. Chen, D. Y. Lin, S. C. Tan, and S. Y. R. Hui, “Chromatic, photometric and thermal modeling of LED systems with nonidentical LED devices,” IEEE Trans. Power Electron., Vol. 29, No. 12, pp. 6636-6647, Dec. 2014.
DOI
|
6 |
A. Keppens, W. R. Ryckaert, G. Deconinck, and P. Hanselaer, “High power light-emitting diode junction temperature determination from current–voltage characteristics,” J. Appl. Phys., Vol. 104, No. 9, pp. 3104-3108, Nov. 2008.
DOI
|
7 |
C. W. Tang, B. J. Huang, and S. P. Ying, “Illumination and color control in red-green-blue light-emitting diode,” IEEE Trans. Power Electron., Vol. 29, No. 9, pp. 4921-4937, Sep. 2014.
DOI
|
8 |
H. T. Chen, S. C. Tan, and S. Y. Hui, “Analysis and modeling of high-power phosphor-coated white light-emitting diodes with a large surface area,” IEEE Trans. Power Electron., Vol. 30, No. 6, pp. 3334-3344, Jun. 2015.
DOI
|
9 |
H. Y. Ye, X. P. Chen, and G. Q. Zhang, “Thermal transient effect and improved junction temperature measurement method in high-voltage light-emitting diodes,” IEEE Electron Device Lett., Vol. 34, No. 9, pp. 1172-1174, Sep. 2013.
DOI
|
10 |
O. Heikkilä, J. Oksanen, and J. Tulkki, “Ultimate limit and temperature dependency of light-emitting diode efficiency,” J. Appl. Phys., Vol. 105, pp. 3119-3119, May 2009.
DOI
|
11 |
O. Heikkilä, J. Oksanen, and J. Tulkki, “The challenge of unity wall plug efficiency: The effects of internal heating on the efficiency of light emitting diodes,” J. Appl. Phys., Vol. 107, No. 3, pp. 3105-3106, Feb. 2010.
DOI
|
12 |
C. H. Wang, D. W. Lin, C. Y. Lee, M. A. Tsai, G. L. Chen, H. T. Kuo, W. H. Hsu, H. C. Kuo, T. C. Lu, S. C. Wang, and G. C. Chi, “Efficiency and droop improvement in GaN-based high-voltage light-emitting diodes,” IEEE Electron. Device Lett., Vol. 32, No. 8, pp. 1098-1100, Aug. 2011.
DOI
|
13 |
J. Piprek, “Origin of InGaN/GaN light-emitting diode efficiency improvements using tunnel junction-cascaded active regions,” Appl. Phys. Lett., Vol. 104, pp. 051118, Feb. 2014.
DOI
|
14 |
B. Monemar and B. E. Sernelius, “Defect related issues in the “current roll-off” in InGaN based light emitting diodes,” Appl. Phys. Lett., Vol. 91, No. 18, pp. 181103, Oct. 2007.
DOI
|
15 |
Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and M. R. Krames, “Auger recombination in InGaN measured by photoluminescence,” Appl. Phys. Lett., Vol. 91, No. 14, pp. 141101, Oct. 2007.
DOI
|
16 |
K. A. Bulashevich and S. Y. Karpov, “Is auger recombination responsible for the efficiency rollover in III-nitride light-emitting diodes?” Phys. Stat. Sol. (C), Vol. 5, No. 6, pp. 2066–2069, 2008.
DOI
|
17 |
A. Poppe, G. Farkas, V. Sz´ekely, G. Horv´ath, and M. Rencz, "Multidomain simulation and measurement of power LED-s and power LED assemblies," in Proc. 22nd Annu. IEEE Semicond. Thermal Meas. Manag. Symp., pp. 191-198, 2006.
|
18 |
K. J. Vampola, M. Iza, S. Keller, S. P. D. Baars, and S. Nakamura, “Measurement of electron overflow in 450 nm InGaN light-emitting diode structures,” Appl. Phys. Lett., Vol. 94, No. 6, pp. 061116, Feb. 2009.
DOI
|
19 |
J. Piprek, “Efficiency droop in nitride-based light-emitting diodes,” Phys. Stat. Sol. (A), Vol. 207, No. 10, pp. 2217–2225, 2010
DOI
|
20 |
X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, U. Ozgur, H. Morkoc, A. Matulionis, T. Paskova, G. Mulholland, and K. R. Evans, “InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes,” Appl. Phys. Lett., Vol. 97, No. 3, pp. 031110, Jul. 2010.
DOI
|
21 |
CREE X Lamp XR-E LED, Datasheet, http://www.cree.com/LED-Components-and-Modules/Products/XLamp.
|
22 |
SEOUL N42180 LED, Datasheet, http://www.seoulsemicon.com/_upload/Goods_Spec/X42180_07(0).pdf.
|
23 |
G. Farkas, Q. V. V. Vader, A. Poppe, and G. Bogn´ar, “Thermal investigation of high power optical devices by transient testing,” IEEE Trans. Compon., Packag., Technol., Vol. 28, No. 1, pp. 45-50, Mar. 2005.
DOI
|
24 |
V. Sz´ekely, A. Poppe, M. Rencz, M. Rosental, and T. Tesz´eri, “Therman: A thermal simulation tool for IC chips, microstructures and PW boards,” Microelectron. Rel., Vol. 40, No. 3, pp. 517-524, 2000.
DOI
|
25 |
U.S. Department of Energy, Energy Efficiency and Renewable Energy, Thermal management of white LEDs, www.eere.energy.gov
|
26 |
S. Y. R. Hui and Y. X. Qin, “A general photo-electro-thermal theory for light-emitting-diode (LED) systems,” IEEE Trans. Power Electron., Vol. 24, No. 8, pp. 1967-1976, Aug. 2009.
DOI
|