• Journal of the Korean Society for Precision Engineering
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• v.19 no.2
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• pp.106-113
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• 2002

Stencil is used normally as a mask for seeder pasting on pad of PCB. The objective of this study is to develop stencil cutting system and determine optimal conditions which make good-quality stencil by using a Nd:YAG laser. The effects of process parameters such as laser power, type of mask, gas pressure, cutting speed and pulse width old the cut edge quality were investigated. In order to analyse fille cut surface characteristics(roughness, kerf width, dross) optical microscopy, SEM photography and roughness test were used. As a result, the optimal conditions of process parameters were determined, and the practical feasibility of the proposed system is also examined by using a commercial Gerber file for PCB stencil manufacturing.

• Proceedings of the KIEE Conference
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• summer
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• pp.518-520
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• 2004

In these days, there is a demand to develop fault current limiters(FCLs) to reduce excessive fault current and protect electrical equipments which are installed in the transmission and distribution power systems. We considered the resistive superconducting FCLs among the various kinds of FCLs. In this study, in order to develop the resistive superconducting FCL of 6.6kV 200A $3\phi$, we designed the new mask pattern for etching YBCO films by means of numerical analysis method, current limiting experiments and visualization of bubbles in films and investigated dielectric performance of the designed mask by using elecrtostatic numerical analysis method and breakdown experiments. We etched YBCO films by using the newly designed mask, connected the etched films in series and in parallel, and designed the 6.6kV resistive SFCL and then we observed the current limiting characteristics of the SFCL.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.44-47
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• 2019

Amorphous carbon layer (ACL) is actively used as an etch mask. Recent advances in patterning ACL requires the next level of durability of hard mask in high aspect ratio etch in near future semiconductor manufacturing, and it is worthwhile to know the surface property of ACL thin film to enhance the property of etch hard mask. In this research, ACL are deposited by 6 inch plasma enhanced chemical vapor deposition system with $C_3H_6$ and $N_2$ gas mixture. Surface properties of deposited ACL are investigated depending on gas flow, pressure, RF power. Fourier transform infrared is used for the analysis of surface chemistry, and X-ray photoemission spectra is used for the structural analysis with the consideration of the contents of $sp^2$ and $sp^3$ through fitting of C1s. Also mechanical properties of deposited ACL are measured in order to evaluate hardness.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.48-52
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• 2019

Virtual metrology, which is one of APC techniques, is a method to predict characteristics of manufactured films using machine learning with saving time and resources. As the photoresist is no longer a mask material for use in high aspect ratios as the CD is reduced, hard mask is introduced to solve such problems. Among many types of hard mask materials, amorphous carbon layer(ACL) is widely investigated due to its advantages of high etch selectivity than conventional photoresist, high optical transmittance, easy deposition process, and removability by oxygen plasma. In this study, VM using different machine learning algorithms is applied to predict the thickness of ACL and trained models are evaluated which model shows best prediction performance. ACL specimens are deposited by plasma enhanced chemical vapor deposition(PECVD) with four different process parameters(Pressure, RF power, $C_3H_6$ gas flow, $N_2$ gas flow). Gradient boosting regression(GBR) algorithm, random forest regression(RFR) algorithm, and neural network(NN) are selected for modeling. The model using gradient boosting algorithm shows most proper performance with higher R-squared value. A model for predicting the thickness of the ACL film within the abovementioned conditions has been successfully constructed.

• Journal of Internet of Things and Convergence
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• v.8 no.6
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• pp.27-33
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• 2022

Sleep is an essential factor for living a healthy life, but most modern people complain of poor sleep. For these people, as the need for a means to simply evaluate and manage the quality of sleep increases, devices that can check the sleep state at home without monitoring by an examiner are being developed. The smart sleep mask, which is the subject of this usability test, provides bio-signal monitoring while sleeping so that you can conveniently measure and manage your sleep state for yourself. The purpose of this study is to evaluate the usability and safety of the smart sleep mask, to find and prevent potential factors related to errors in use that may occur, and to develop the comfort and safety of this product. As a result of the formative evaluation of the sleep mask prototype, it was reported that it was difficult to turn on the power and check the results, and that the sleep mask was not comfortable to wear. Different opinions were presented on the size and weight of the sleeping mask by people in different age groups.

• Korean Journal of Materials Research
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• v.8 no.2
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• pp.147-153
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• 1998

Tungsten nitride is very attractive as absorber for X-ray lithographic mask and as a diffusion barrier for interconnecting metallization in Si VLSI technology. Microstructure of tungsten nitride films prepared by RF magnetron sputtering has been investigated as a function of deposition parameter. The crystal structure of sputtered films on silicon nitride membrane depends strongly on the NJAr gas flow ratio(0~18%1, gas pressure(l0~43mTorr). RF power (60~150W), target-substrate distance(4~8cm). Tungsten nitride films deposited at the $N_2/Ar$ gas flow ratio(- 10%). gas pressure(~10mmTorr), RF power(~150W) and target-substrate distance(6cm) are amorphous, but at other conditions are almost rough -surfaced polycrystalline. Amorphous films are very smooth($3.1\AA$ rms) and expected to be excellent absorber for X-ray mask.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.32 no.6A
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• pp.573-587
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• 2007

In this paper, we analyze the adjacent interference between WCDMA and M-WiMAX systems in the 2.6GHz Band under the SISO (Single Input Single Output) configuration. The interference scenarios are characterized into 8 scenarios with different victim and interfering links. Among the 8 scenarios, we find that the most performance loss is observed in the scenarios of victim uplink suffering interference from downlink in both systems. Besides, guard band is applied to mitigate the adjacent interference in all the scenarios. Especially, we reveal that M-WiMAX system is much more sensitive to adjacent interference than WCDMA system due to the lower transmission power. In this paper, we consider the worst interference environment, where interferers always transmit with the maximum power, a loose spectrum mask is adapted, and no additional channel fitters are equipped in both systems.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.24 no.10
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• pp.1262-1270
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• 2020

Recently, the smart video surveillance research, which has been receiving increasing attention, has mainly focused on the intruder detection and tracking, and abandoned object detection. On the other hand, research on real-time detection of stolen objects is relatively insufficient compared to its importance. Considering various smart surveillance video application environments, this paper presents two different types of stolen object detection algorithms. We first propose an algorithm that detects theft of statically and dynamically registered surveillance objects using a dual background subtraction model. In addition, we propose another algorithm that detects theft of general surveillance objects by applying the dual background subtraction model and Mask R-CNN-based object segmentation technology. The former algorithm can provide economical theft detection service for pre-registered surveillance objects in low computational power environments, and the latter algorithm can be applied to the theft detection of a wider range of general surveillance objects in environments capable of providing sufficient computational power.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.3
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• pp.87-92
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• 1997

Inductively coupled Cl$_{2}$ plasma has been studied to etch Pt thin films, which hardly form volatile compound with any reactive gas at normal process temperature. Low etch rate and residue problems are frequently observed. For higher etch rate, high density plasma and higher process temperature is adopted observed. For higher etch rate, high density plasma and higher process temperature is adopted and thus SiO$_{2}$ is used as for patterning mask instead of photoresist. The effect of O$_{2}$ or Ar addition to Cl$_{2}$ was investigated, and the chamber pressure, gas flow rate, surce RF power and bias RF power are also varied to check their effects on etch rate and selectivity. The major etching mechanism is the physical sputtering, but the ion assisted chemical raction is also found to be a big factor. The proposs can be optimized to obtain the etch rate of Pt up to 200nm/min and selectivity to SiO$_{2}$ at 2.0 or more. Patterning of submicron Pt lines are successfully demonstrated.

• Journal of Advanced Marine Engineering and Technology
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• v.31 no.5
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• pp.575-582
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• 2007

In this paper, a 100 Watt high power amplifier has been implemented and performed evaluation, which is operating at UHF band ($470\;{\sim}\;806\;MHz$) for Digital TV repeater. To achieve increase of bandwidth and high power capability, 3-way power combiner and divider of Wilkinson type was adopted. In order to measure the fabricated 100 Watt power amplifier, the estimation technique function which makes equivalent mask was used. As a result of the measurement, the existence of pilot signal is confirmed and the signal transmitted at the rated output power 100 Watt is brought out the flat feature through 6 MHz bandwidth. and it resulted that its value was less than -47 dB at the edge of radiation channel and less than -110 dB at more than 6 MHz position from channel edge.