• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.12
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• pp.8643-8648
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• 2015

In this paper presents the design and demonstrate 8 W 3-stage HPA(High Power Amplifier) MMIC(Monolithic Microwave Integrated Circuits) for Ka-band down link satellite communications payload system at 19.5 GHz ~ 22 GHz frequency band. The HPA MMIC consist of 3-stage GaN HEMT(Hight Electron Mobility Transistors). The gate periphery of $1^{st}$ stage, $2^{nd}$ stage and output stage is determined $8{\times}50{\times}2$ um, $8{\times}50{\times}4$ um and $8{\times}50{\times}8$ um, respectively. The fabricated HPA MMIC shows size $3,400{\times}3,200um^2$, small signal gain over 29.6 dB, input matching -8.2 dB, output matching -9.7 dB, output power 39.1 dBm and PAE 25.3 % by using 0.15 um GaN technology at 20 V supply voltage in 19.5~22 GHz frequency band. Therefore, this HPA MMIC is believed to be adaptable Ka-band satellite communication payloads down link system.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.13 no.3
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• pp.184-196
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• 2020

In this paper, a single-bit 2nd-order delta-sigma modulator with the architecture of cascaded-of-integrator feedforward (CIFF) is proposed for precision measurement of current flowing through a secondary cell battery in a battery management system (BMS). The proposed modulator implements two switched capacitor integrators and a single-bit comparator with peripheral circuits such as a non-overlapping clock generator and a bias circuit. The proposed structure is designed to be applied to low-side current sensing method with low common mode input voltage. Using the low-side current measurement method has the advantage of reducing the burden on the circuit design. In addition, the ±30mV input voltage is resolved by the ADC with 15-bit resolution, eliminating the need for an additional programmable gain amplifier (PGA). The proposed a single-bit 2nd-order delta-sigma modulator has been implemented in a 350-nm CMOS process. It achieves 95.46-dB signal-to-noise-and-distortion ratio (SNDR), 96.01-dB spurious-free dynamic range (SFDR), and 15.56-bit effective-number-of-bits (ENOB) with an oversampling ratio (OSR) of 400 for 5-kHz bandwidth. The area and power consumption of the delta-sigma modulator are 670×490 ㎛2 and 414 ㎼, respectively.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.3
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• pp.46-55
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• 2016

This work proposes a 13b 100MS/s 45nm CMOS ADC with a high dynamic performance for IF-domain high-speed signal processing systems based on a four-step pipeline architecture to optimize operating specifications. The SHA employs a wideband high-speed sampling network properly to process high-frequency input signals exceeding a sampling frequency. The SHA and MDACs adopt a two-stage amplifier with a gain-boosting technique to obtain the required high DC gain and the wide signal-swing range, while the amplifier and bias circuits use the same unit-size devices repeatedly to minimize device mismatch. Furthermore, a separate analog power supply voltage for on-chip current and voltage references minimizes performance degradation caused by the undesired noise and interference from adjacent functional blocks during high-speed operation. The proposed ADC occupies an active die area of $0.70mm^2$, based on various process-insensitive layout techniques to minimize the physical process imperfection effects. The prototype ADC in a 45nm CMOS demonstrates a measured DNL and INL within 0.77LSB and 1.57LSB, with a maximum SNDR and SFDR of 64.2dB and 78.4dB at 100MS/s, respectively. The ADC is implemented with long-channel devices rather than minimum channel-length devices available in this CMOS technology to process a wide input range of $2.0V_{PP}$ for the required system and to obtain a high dynamic performance at IF-domain input signal bands. The ADC consumes 425.0mW with a single analog voltage of 2.5V and two digital voltages of 2.5V and 1.1V.