• Transactions of the Korean Society of Mechanical Engineers B
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• v.36 no.4
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• pp.457-463
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• 2012

Current refrigerators are designed to have thin doors and walls to facilitate user convenience and increase inner storage space. However, the thin doors and walls gives rise to the problem of dew generation on the outer surface of a refrigerator due to a large critical temperature difference between the outer wall and the room air; So far, an electric heater is commonly used for making the dew to evaporate; in this case, the heater inevitably requires additional electrical power. We propose a new approach to reduce the dew generation in a refrigerator by redesigning the gasket and varying the thickness of the inner case of the refrigerator. The results of simulations performed in this study indicate that the surface temperature in the region where dew was generated was increased by approximately $0.39{\sim}3.07^{\circ}C$ without the use of a heater.

• Journal of IKEEE
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• v.16 no.1
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• pp.28-33
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• 2012

Recently, with mobile devices increasing, as a variety of multimedia functions are needed, battery life is decreased. Accordingly the methods for extending the battery life has been proposed. In order to implement these methods, we have to know exactly the status of the battery, so we need a high resolution analog to digital converter(ADC). In case of the existing integrating sigma-delta ADC, it have not convert reset-time conversion cycle to function of resolution. Because of this reason, all digital values corresponding to the all number of bits will not be able to be expressed. To compensated this drawback, this paper propose that all digital values corresponding to the number of bits can be expressed without having to convert reset-time additional conversion cycle to function of resolution by using a up-down counter. The proposed circuit achieves improved SNDR compared to conventional converters simulation result. Also, this was designed for low power suitable for battery management systems and fabricated in 0.35um process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.5-5
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• 2009

Thin-film-transistors (TFTs) that can be prepared at low temperatures have attracted much attention because of the great potential for transparent and flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited due to low field-effect mobility and rapid degradation after exposing to air. Alternative approach is the use of amorphous oxide semiconductors as a channel. Amorphous oxide semiconductors (AOSs) based TFTs showed the fast technological development, because AOS films can be fabricated at room temperature and exhibit the possibility in application like flexible display, electronic paper, and larges solar cells. Among the various AOSs, a-IGZO has lots of advantages because it has high channel mobility, uniform surface roughness and good transparency. [1] The high mobility is attributed to the overlap of spherical s-orbital of the heavy post-transition metal cations. This study demonstrated the effect of the variation in channel thickness from 30nm to 200nm on the TFT device performance. When the thickness was increased, turn-on voltage and subthreshold swing was decreased. The a-IGZO channels and source/drain metals were deposited with shadow mask. The a-IGZO channel layer was deposited on $SiO_2$/p-Si substrates by RF magnetron sputtering, where RF power is 150W. And working pressure is 3m Torr, at $O_2/Ar$ (2/28 sccm) atmosphere. The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. Finally, Al (150nm) as a gate metal was thermal-evaporated. TFT devices were heat-treated in a furnace at 250 $^{\circ}C$ and nitrogen atmosphere for 1hour. The electrical properties of the TFTs were measured using a probe-station. The TFT with channel thickness of 150nm exhibits a good subthreshold swing (SS) of 0.72 V/decade and on-off ratio of $1{\times}10^8$. The field effect mobility and threshold voltage were evaluated as 7.2 and 8 V, respectively.

• Proceedings of the IEEK Conference
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• 2002.07a
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• pp.417-420
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• 2002

Recent works in the area of multimedia studies focus on a wide range of issues from the impact of multimedia on culture to its impact on economics and anything in between. The interconnectedness of the issues raised by this new practice is complicated by the fact that media are rapidly converging: in a very real way, multimedia is becoming a media prism that reflects the way in which media continually influence each other across disciplines and cultural borders. Thus, the impact of multimedia reflects a complicated crossroads where media, human experience, culture and technology converge. An effective design is generally based on shaping aesthetics for function and utility, with an emphasis on ease of use. However, in designing for cyberspace, it is possible to create narratives that challenge the interactor by encoding in the design an instructional aspect that teaches new approaches and forms. Such a design offers an equally aesthetic experience for the interactor as they explore the meaning of the work. This design approach has been used constructively in many applications. The crucial concern is to determine how little or how much information must be presented for the interactor to achieve a suitable level of cognition. This is always a balancing act: too much difficulty will result in interactor frustration and the abandonment of the activity and too little will result in boredom leading to the same negative result In addition, it can be anticipated that the interactor will bring her or his own level of experiential cognition and/or accretion, to the experience providing reflective cognition and/or restructure the learning curve. If the design of the application is outside their present experience, interactors will begin with established knowledge in order to explore the new work. Thus, it may be argued that the interactor explores, learns and cognates simultaneously based on primary experiential cognition. Learning is one of the most important keys to establishing a comfort level in a new media work. Once interactors have learned a new convention, they apply this cognitive knowledge to other new media experiences they may have. Pierre Levy would describe this process as a "new nomadism" that creates "an invisible space of understanding, knowledge, and intellectual power, within which new qualities of being and new ways of fashioning a society will flourish and mutate" (Levy xxv 1997). Thus, navigation itself of offers the interactors the opportunity to both apply and loam new cognitive skills. This suggests that new media narrative strategies are still in the process of developing unique conventions and, as a result, have not reached a level of coherent grammar. This paper intends to explore the cognitive aspects of new media design and in particular, will explore issues related to the design of new media interfaces. The paper will focus on the creation of narrative strategies that engage interactors through loaming curves thus enhancing interactivity.vity.

• Journal of IKEEE
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• v.22 no.1
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• pp.180-184
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• 2018

Gallium oxide ($Ga_2O_3$) and silicon carbide (SiC) are the material with the wide band gap ($Ga_2O_3-4.8{\sim}4.9eV$, SiC-3.3 eV). These electronic properties allow high blocking voltage. In this work, we investigated the characteristic of $Ga_2O_3$ and 4H-SiC vertical depletion-mode metal-oxide-semiconductor field-effect transistors. We demonstrated that the blocking voltage and on-resistance of vertical DMOSFET is dependent with structure. The structure of $Ga_2O_3$ and 4H-SiC vertical DMOSFET was designed by using a 2-dimensional device simulation (ATLAS, Silvaco Inc.). As a result, 4H-SiC and $Ga_2O_3$ vertical DMOSFET have similar blocking voltage ($Ga_2O_3-1380V$, SiC-1420 V) and then when gate voltage is low, $Ga_2O_3-DMOSFET$ has lower on-resistance than 4H-SiC-DMOSFET, however, when gate voltage is high, 4H-SiC-DMOSFET has lower on-resistance than $Ga_2O_3-DMOSFET$. Therefore, we concluded that the material of power device should be considered by the gate voltage.

• Journal of Institute of Control, Robotics and Systems
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• v.22 no.9
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• pp.705-709
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• 2016

Micro-electro-mechanical systems (MEMS) gyroscopes are widely used in various robot applications. However, these conventional gyroscopes need to vibrate the proof mass using a built-in actuator at a fixed resonance frequency to sense the Coriolis force. When a robot is not moving, the meaningless vibration of the gyroscope wastes power. In addition, this continuous vibration makes the sensor vulnerable to external sound waves with a frequency close to the proof-mass resonance frequency. In this paper, a feasibility study of a new type of gyroscope inspired by insect halteres is presented. In dipterous insects, halteres are a biological gyroscope that measures the Coriolis force. Wing muscles and halteres are mechanically linked, and the halteres oscillate simultaneously with wing beats. The vibrating haltere experiences the Coriolis force if the insect is going through a rotational motion. Inspired by this haltere structure, a gyroscope using a thin mast integrated with a robot actuation mechanism is proposed. The mast vibrates only when the robot is moving without requiring a separate actuator. The Coriolis force of the mast can be measured with an accelerometer installed at the tip of the mast. However, the signal from the accelerometer has multiple frequency components and also can be highly corrupted with noise, such that raw data are not meaningful. This paper also presents a suitable signal processing technique using the amplitude modulation method. The feasibility of the proposed haltere-inspired gyroscope is also experimentally evaluated.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.10 no.1
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• pp.31-37
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• 2017

In this paper, we implemented for the development of a high output induction lamp system, which lamp design is optimized by gas type, mixing ratio, pressure and discharge tube size, amalgam type and mixing ratio, and characteristics of ferrite core in the lamp. It's the circuit design by improving the power factor and efficiency according to the driving method, which has analyzing the characteristics according to the waveform and frequency. Finally, luminaries design part for applying the optimal lighting system considering the surrounding environment, the characteristics of the lighting circuit for electrodeless lamp has analyzed and the improvement has been proceeded. In conclusion, the driving frequency has optimized at 135kHz with degrading $7{\sim}10^{\circ}C$ based on the results of the optical characteristics of the induction lamp on peak noise FET(Q3,Q4) damage.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.9
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• pp.1747-1754
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• 2016

This paper presents a high accuracy and fast hybrid on-chip temperature sensor. The proposed temperature sensor combines a SAR type temperature sensor with a ${\Sigma}{\Delta}$ type temperature sensor. The SAR type temperature sensor has fast temperature searching time but it has more error than the ${\Sigma}{\Delta}$ type temperature sensor. The ${\Sigma}{\Delta}$ type temperature sensor is accurate but it is slower than the SAR type temperature sensor. The proposed temperature sensor uses both the SAR and ${\Sigma}{\Delta}$ type temperature sensors, so that the proposed temperature sensor has high accuracy and fast temperature searching. Also, the proposed temperature sensor includes a temperature error compensating circuit by storing the temperature errors in a memory circuit after chip fabrication. The proposed temperature sensor was fabricated in 3.3V CMOS $0.35{\mu}m$ process. Its temperature resolution, power consumption, and area are $0.15^{\circ}C$, $540{\mu}W$, and $1.2mm^2$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.137-137
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• 2009

Thin-film transistors (TFTs) that can be prepared at low temperatures have attracted much attention due to the great potential for flexible electronics. One of the mainstreams in this field is the use of organic semiconductors such as pentacene. But device performance of the organic TFTs is still limited by low field effect mobility or rapidly degraded after exposing to air in many cases. Another approach is amorphous oxide semiconductors. Amorphous oxide semiconductors (AOSs) have exactly attracted considerable attention because AOSs were fabricated at room temperature and used lots of application such as flexible display, electronic paper, large solar cells. Among the various AOSs, a-IGZO was considerable material because it has high mobility and uniform surface and good transparent. The high mobility is attributed to the result of the overlap of spherical s-orbital of the heavy pest-transition metal cations. This study is demonstrated the effect of thickness channel layer from 30nm to 200nm. when the thickness was increased, turn on voltage and subthreshold swing were decreased. a-IGZO TFTs have used a shadow mask to deposit channel and source/drain(S/D). a-IGZO were deposited on SiO2 wafer by rf magnetron sputtering. using power is 150W, working pressure is 3m Torr, and an O2/Ar(2/28 SCCM) atmosphere at room temperature. The electrodes were formed with Electron-beam evaporated Ti(30nm) and Au(70nm) structure. Finally, Al(150nm) as a gate metal was evaporated. TFT devices were heat treated in a furnace at $250^{\circ}C$ in nitrogen atmosphere for an hour. The electrical properties of the TFTs were measured using a probe-station to measure I-V characteristic. TFT whose thickness was 150nm exhibits a good subthreshold swing(S) of 0.72 V/decade and high on-off ratio of 1E+08. Field effect mobility, saturation effect mobility, and threshold voltage were evaluated 7.2, 5.8, 8V respectively.

• Journal of the Korean Institute of Intelligent Systems
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• v.25 no.1
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• pp.7-14
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• 2015

To implement an automatic picking system (APS) in distribution center with high precision and high dynamics, this paper presents a high gain observer-based robust speed controller design for a linear induction motor (LIM) drive. The force disturbance as well as the mechanical parameter variations such as the mass and friction coefficient gives a direct influence on the speed control performance of APS. To guarantee a robust control performance, the system uncertainty caused by the force disturbance and mechanical parameter variations is estimated through a high gain disturbance observer and compensated by a feedforward manner. While a time-varying disturbance due to the mass variation can not be effectively compensated by using the conventional disturbance observer, the proposed scheme shows a robust performance in the presence of such uncertainty. A Simulink library has been developed for the LIM model from the state equation. Through comparative simulations based on Matlab - Simulink, it is proved that the proposed scheme has a robust control nature and is most suitable for APS.