• Journal of Electrical Engineering and Technology
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• v.11 no.5
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• pp.1153-1164
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• 2016

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1947-1949
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• 1999

Carrier lifetime in silicon power devices caused switching delay and excessive power loss at high frequency switching. We studied transient turn-on/turn-off transient characteristics of electron irradiated and proton irradiated silicon pn junction diodes. Both the electron and proton irradiation of power devices have already become a widely used practice to reduce minority carrier lifetime locally[1]. The sample is n+p junction diode, made by ion implantation on a $20\Omega.cm$ p-type wafer. We investigated turn-on/turn-off transient & breakdown voltage characteristics by digital oscilloscope. Our data show that proton irradiated samples show better performance than electron irradiated samples.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.9
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• pp.1085-1094
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• 1992

A variable-spacing cesium thermionic energy conversion test station is designed and fabricated for the study of power generation. The diode is in the form of a guard-ringed plane-parallel geometry in which a polycrystalline rhenium emitter of 2 cmS02T area faces a radiation-cooled polycrystalline rhenium collector of 1.9 cmS02T area. The emission of plasma from heated refractory electrode metal is the driving reaction in the direct conversion of heat to electricity by thermionic energy conversion. The plasma is produced from electrons and positive ions formed simultaneously by thermionic emission and surface ionization of cesium atoms incident on the hot emitter from the cesium vapor in the diode. And high plasma density causes plasma multiplication within the gap due to volume ionization that results in high power output. The variation of the saturation current of a Knudsen converter is investigated at an emitter-collector gap of 0.1 mm and an emitter temperatures. A maximum power output of 13.47 watta/cmS02T is observed at a collector temperature of 963 K and a cesium reservoir temperature of 603 K.

• Proceedings of the Korean Institute of Intelligent Systems Conference
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• 2003.09b
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• pp.118-121
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• 2003

Generally, the repeater in CDMA(Code Division Multiple Access) included HPA(HI-Power Amplifier) to amplifier communication signals. Also , HPA contained PD(Predistortor) to maintain the linearization of amplifier characteristics. A configuration component of PD have been used electricity nonlinear devices such that diode. But this diode takes many influences at the circumstance temperature. Consequently, it can't maintain output linearization, and drop the communication quality. The manufacturer set bias of the circuit to the manual at the first out of ware-house low But the Q-point changes according to the change of the high temperature or low temperature. Therefore, we designed a system to maintain the Q-point by FDM(Fuzzy Decision Maker) in this paper.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.7
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• pp.580-583
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• 2009

This paper introduces a gate drive IC for power modules with shoot-through immunity. A new approach uses a bootstrap diode as a high-side voltage bias and a level shift function at the same time. Therefore, the gate drive circuit becomes a simple and low-cost without conventional level shift functions such as HVIC(High-Voltage IC), optocoupler and transformer. The proposed gate drive IC is designed and fabricated using the Dongbu-Hitek's 0.35um BD350BA process. It has been tested and verified with IGBT modules.

• Proceedings of the KIPE Conference
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• 2001.12a
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• pp.149-152
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• 2001

A Single-phase bi-directional inverter Using a diode bridge-type resonant circuit to implement ZVT(Zero Voltage Transition) switching is Presented. It is shown that the ZACE(Zero Average Current Error) algorithm based polarized ramptime current control can provide a suitable interface between diode bridge-type resonant circuit DC link and the inverter. The current control algorithm is analyzed about how to design the circuit with analyzed switch which m ZVT operation for the main power switch The simulation and experimental results would be shown to verify the proposed current algorithm, because the main power switch is turn on with ZVT and the bi-directional inverter is operated.

• Journal of Power Electronics
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• v.7 no.4
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• pp.301-309
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• 2007

The flyback converter is one of the most attractive isolated converters in small power applications because of its simple structure. However, it suffers from high device stress, large transformer size, and high voltage stress across its switch and diode. To solve these problems a new cost-effective PWM single-switch isolated converter is proposed. The proposed converter has no output filter inductor, reduced voltage stress on the secondary devices, and reduced transformer size. Moreover, the switch turn-off loss is reduced and no dissipative snubber across the secondary diode is required. Therefore, it features a simple structure, a low cost, and high efficiency. The operational principle and characteristics of the proposed converter are presented and compared with the flyback converter and then verified experimentally.

• ETRI Journal
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• v.28 no.1
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• pp.84-86
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• 2006

This letter presents a small-sized, high-power single-pole double-throw (SPDT) switch with defected ground structure (DGS) for wireless broadband Internet application. To reduce the circuit size by using a slow-wave characteristic, the DGS is used for the quarter-wave (${\lambda}$/4) transmission line of the switch. To secure a high degree of isolation, the switch with DGS is composed of shunt-connected PIN diodes. It shows an insertion loss of 0.8 dB, an isolation of 50 dB or more, and power capability of at least 50 W at 2.3 GHz. The switch shows very similar performance to the conventional shunt-type switch, but the circuit size is reduced by about 50% simply with the use of DGS patterns.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.81-82
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• 2009

This paper introduces a gate drive IC for power modules with shoot-through immunity. A new approach uses a bootstrap diode as a high-side voltage bias and a level shift function at the same time. Therefore, the gate drive circuit becomes a simple and low-cost without conventional level shift functions such as HVIC(High-Voltage IC), optocoupler and transformer. The proposed gate drive IC is designed and fabricated using the Dongbu-Hitek's 0.35um BD350BA process. It has been tested and verified with IGBT modules.

• Proceedings of the KIPE Conference
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• 2003.07b
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• pp.880-885
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• 2003

Using a Assistance Power Sources of the Railroad Vehicles Three-Level ZVZCS DC/DC Converter is presented in this paper. The proposed three-Level DC/DC Converter Is to achieved zero voltage and zero current switching for the two Main switches. phase shift method is used a parastic capacitance by reverse recovery characteritics in a inner diode of the switching device. Also. using a diode second part of the Transformer by the simple auxiliary circuit for the achieved zero current switching of the Auxiliary switch. For the ZVZCS movement of the all switching devices is analyzed and verified under a 5kW, in the 100kHz switching frequency.