• Journal of Power Electronics
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• v.4 no.2
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• pp.117-126
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• 2004

This paper focuses on the electrical modeling techniques of renewable energy sources and storage devices such as batteries, fuel cells (FCs), photovoltaic (PVs) arrays, ultra-capacitors (UCs), and flywheel energy storage systems (FESS). All of these devices are being investigated recently for their typical storage and supply capabilities for various industrial applications. Hence, these devices must be modeled precisely taking into account the concerned practical issues. An obvious advantage of electrically modeling these renewable energy sources and storage devices is the fact that they can easily be simulated in real-time in any CAD simulation program. This paper reviews several types of suitable models for each of the above-mentioned devices and the most appropriate model amongst them is presented. Furthermore, a few important applications of these devices shall also be highlighted.

• Electronics and Telecommunications Trends
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• v.34 no.5
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• pp.71-80
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• 2019

Gallium nitride (GaN) can be used in high-voltage, high-power-density/-power, and high-speed devices owing to its characteristics of wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. In this study, we investigate the technology trends for X-/Ku-band GaN RF power devices and MMIC power amplifiers, focusing on gate-length scaling, channel structure, and power density for GaN RF power devices and output power level and output power density for GaN MMIC power amplifiers. Additionally, we review the technology trends in gallium arsenide (GaAs) RF power devices and MMIC power amplifiers and analyze the technology trends in RF power devices and MMIC power amplifiers based on both GaAs and GaN. Furthermore, we discuss the current direction of national research by examining the national and international technology trends with respect to X-/Ku-band power devices and MMIC power amplifiers.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.3
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• pp.15-22
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• 2019

In these days, importance of the power electronic devices and modules keeps increasing due to electric vehicles and energy saving requirements. However, current silicon-based power devices showed several limitations. Therefore, wide band gap (WBG) semiconductors such as SiC, GaN, and $Ga_2O_3$ have been developed to replace the silicon power devices. WBG devices show superior performances in terms of device operation in harsh environments such as higher temperatures, voltages and switching speed than silicon-based technology. In power devices, the reliability of the devices and module package is the critically important to guarantee the normal operation and lifetime of the devices. In this paper, we reviewed the recent trends of the power devices based on WBG semiconductors as well as expected future technology. We also presented an overview of the recent package module and fabrication technologies such as direct bonded copper and active metal brazing technology. In addition, the recent heat management technologies of the power modules, which should be improved due to the increased power density in high temperature environments, are described.

• Journal of Power Electronics
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• v.16 no.2
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• pp.815-822
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• 2016

The efficiency of light-emitting diode (LED) devices is a significant factor that reflects the capability of these devices to convert electrical power into optical power. In this study, a method for estimating the efficiency of LED devices is proposed. An efficiency model and a heat power model are established as convenient tools for LED performance evaluation. Such models can aid in the design of LED drivers and in the reliability evaluation of LED devices. The proposed estimation method for the efficiency and heat power of LED devices is verified by experimentally testing two types of commercial LED devices.

• IEMEK Journal of Embedded Systems and Applications
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• v.13 no.3
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• pp.117-124
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• 2018

Wearable devices have become widespread. Fitness band is one of common wearable devices, providing useful functions. It helps users to monitor and collect their status such as heart rate and travel distance. Wearable devices, including fitness bands, are designed in small size and it ends up having small battery capacity. In that regard, it is necessary to expand the lifetime of wearable devices. Conventional power management scheme of wearable devices is based on DVFS Ondemand Governor and peripheral control by timeout event, such as turning off the LCD. In this paper, we propose a hybrid governor applying hardware supporting low power mode such as sleep mode to exploit the periodicity of fitness band task. In addition, we show hybrid governor outperforms in power consumption than conventional power management scheme of wearable devices based on Ondemand Governor through experiments.

• Proceedings of the KIPE Conference
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• 2002.11a
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• pp.213-217
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• 2002

Power devices for high power drivers that need high switching speed (IGCT, HVIGBT) have been continuously developed. However, serial and parallel connections using several much cheaper, lower power capacity of devices than an expensive high power device are very useful methods in the aspect of cost down and high power application. Even the current and voltage unbalance problem is occurred at each devices. This unbalance characteristics are mainly caused by the differences of physical characteristics of each devices and the line inductance (stray inductance) of bus bars that consist of current path. This paper deals simulation analysis of serial connection of IGCTs and parallel connection of IGCTs using physical model of devices. And also, introduces the method to reduce the voltage and current unbalance problem.

• Journal of Electrical Engineering and Technology
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• v.7 no.5
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• pp.672-680
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• 2012

This paper proposes the control strategy of the shunt Flexible AC Transmission System (FACTS) devices to improve transient stability in multimachine power system. The multimachine power system has high nonlinear response after severe disturbance. The concept of Lyapunov energy function is applied to derive nonlinear control strategy and it was found that the time derivative of line voltage is not only can apply to control the shunt FACTS devices in multimachine system but also is locally measurable signal. The fuzzy logic control is also applied to overcome the uncertainty of various disturbances in multimachine power system. This paper presents the method of investigating the effect of the shunt FACTS devices on transient stability improvement. The proposed control strategy and the method of simulation are tested on the new England power system. It was found that the shunt FACTS devices based on the proposed nonlinear control strategy can improve transient stability of multimachine power system.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.48 no.2
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• pp.113-118
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• 1999

In this, sensitivity based approach to estimate BITC(bilateral interchange transfer capacity) considering the real power flow control function of FACTS devices is presented. The real power flow setting of the FACTS devices is adjusted so that it transfers the power flow from the first violation point of transmission capacity to other transmission lines in the power system, thus allowing more power to be transferred from the specified generator bus to the specified load bus. The transfer between the two bus locations is increased from this new operating condition until a violation of transmission capacity limits occurs or until the setting of the FACTS devices can no longer be adjusted. The proposed algorithm is illustrated using examples of small and real life power system.

• Progress in Superconductivity and Cryogenics
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• v.9 no.4
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• pp.28-31
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• 2007

This paper describes the consideration of 154kV protective relaying systems for applying HTS(High Temperature Superconducting) power devices to Korean power system. We investigates firstly 154kV relay systems of Korean power system and then do a basic study on the relay systems in the power system with superconducting devices. For the more detailed result, the study using EMTDC relay system modeling will be done from the viewpoint of superconducting devices application in the future.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.05a
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• pp.845-848
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• 2009

Power semiconductor devices are semiconductor devices used as switches or rectifiers in power electronics circuits. Theyare also caleed power devices or when used in integrated circuits, called power ICs. Some common power devices are the power diode, thyristor, power MOSFET and IGBT (insulated gate bipolar transistor). A power diode or MOSFET operates on similar principles to its low-power counterpart, but is able to carry a larger amount of current and typically is able to support a larger reverse-bias voltage in the off-state. Structural changes are often made in power devices to accommodate the higher current density, higher power dissipation and/or higher reverse breakdown voltage. The vast majority of the discrete (i.e non integrated) power devices are built using a vertical structure, whereas small-signal devices employ a lateral structure. With the vertical structure, the current rating of the device is proportional to its area, and the voltage blocking capability is achieved in the height of the die. With this structure, one of the connections of the device is located on the bottom of the semiconductor.