• 제목/요약/키워드: Potential barrier

검색결과 644건 처리시간 0.029초

배리어 유전체 방전을 이용한 전기 집진부에서의 나노 입자 집진 효율 (Collection Efficiency of Nano Particles by Electrostatic Precipitator using Dielectric Barrier Discharge)

  • 강석훈;변정훈;지준호;황정호
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2003년도 춘계학술대회
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    • pp.1435-1440
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    • 2003
  • Although Dielectric Barrier Discharge (DBD) in air has been applied to a wider range of aftertreatment processes for HAPs(Hazardous Air Pollutants), due to its high electron density and energy, its potential use as precharging dust particles is not well known. In this work, we measured size distributions of bimodal aerosol particles and estimated collection efficiency of the particles by electrostatic precipitator(ESP) using DBD as particle charger. To examine the particle collection with DBD charger, nano size particles of NaCl($20{\sim}100$ nm) and DOS($50{\sim}800$ nm) were generated by tube furnace and atomizer, respectively. For experimental conditions of 60 Hz, 11 kV, and 60 lpm, the particle collection efficiency for the hybrid system comprising DBD charger and ESP was over 85 %, based on the number of particles captured.

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Effect of Double Schottky Barrier in Gallium-Zinc-Oxide Thin Film

  • Oh, Teresa
    • Transactions on Electrical and Electronic Materials
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    • 제18권6호
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    • pp.323-329
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    • 2017
  • This reports the electrical behavior, bonding structure and Schottky contact of gallium-zinc-oxide (GZO) thin film annealed at $100{\sim}400^{\circ}C$. The mobility of GZO with high density of PL spectra and crystal structure was also increased because of the structural matching between GZO and Si substrate of a crystal structure. However, the GZO annealed at $200^{\circ}C$ with an amorphous structure had the highest mobility as a result of a band to band tunneling effect. The mobility of GZO treated at low annealing temperatures under $200^{\circ}C$ increased at the GZO with an amorphous structure, but that at high temperatures over $200^{\circ}C$ also increased when it was the GZO of a crystal structure. The mobility of GZO with a Schottky barrier (SB) was mostly increased because of the effect of surface currents as well as the additional internal potential difference.

Numerical analysis of plasma-sprayed ceramic coatings for high-temperature applications

  • St. Doltsinis, Ioannis;Haller, Kai-Uwe;Handel, Rainer
    • Structural Engineering and Mechanics
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    • 제4권6호
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    • pp.679-702
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    • 1996
  • The finite element method is employed in conjunction with micromechanical modelling in order to assess the performance of ceramic thermal barrier coatings applied to structural components. The study comprises the conditions of the deposition of the coating by plasma spraying as well as the thermal cycling of the coated component, and it addresses particularly turbine blades. They are exposed to high temperature changes strongly influencing the behaviour of the core material and inducing damage in the ceramic material by intense straining. A concept of failure analysis is discussed starting from distributed microcracking in the ceramic material, progressing to the formation of macroscopic crack patterns and examining their potential for propagation across the coating. The theory is in good agreement with experimental observations, and may therefore be utilized in proposing improvements for a delayed initiation of failure, thus increasing the lifetime of components with ceramic thermal barrier coatings.

유전체 베리어 방전형 2단 전기집진기의 인가전압 파형별 나노 및 서브마이크론 입자 집진 특성 (Nano and Submicron Sized Particle Collection with Various Voltage Waveforms for Dielectric Barrier Discharge Type 2-Stage ESP)

  • 박재홍;변정훈;황정호
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2004년도 춘계학술대회
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    • pp.1261-1266
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    • 2004
  • Dielectric Barrier Discharge (DBD) in air, which has been established for the production of large quantities of ozone, is more recently being applied to a wider range of aftertreatment processes for HAPs (Hazardous Air Pollutants). Although DBD has high electron density and energy, its potential use as precharging nano and submicron particles are not well known. In this work, we measured I-V characteristics of DBD and estimated collection efficiency of the particles by DBD type 2-stage ESP. To examine the particle collection with various applied voltage waveforms of DBD for nano and submicron sized, bimodal particles were generated by a electrical tube furnace and an atomizer.

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Nb+5첨가된 반도성 BaTiO3세라믹스에서 MoO3의 영향과 주파수 특성 (Effect of MoO3 Addition and Their Frequency Characteristics in Nb+5 doped Semiconductive BaTiO3 Ceramics)

  • 윤상옥;정형진;윤기현
    • 한국세라믹학회지
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    • 제24권1호
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    • pp.63-69
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    • 1987
  • Effect of MoO3 additiion on the semiconductive BaTiO3 ceramics doped with 0.2 mole% Nb2O5 and their frequency characteristics have been investigated on the view of intergranular barrier layer model through the observation of changes in their electrical properties. The resistivity increases with the increase of MoO3 addition, but the capacitance, the frequency dependence of capacitance and the effect of positive temperature coefficient of resistivity (PTCR) decrease. It is explained by the possible increase in the thickness of potential barrier due to the formation of insulating layer and thus decrease in the degree of energy band bending. Both the PTCR effect and resistivity decrease with the increase of frequency due to the possible elimination of barrier layer at the grain boundary.

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MOM-Bentonite 투수성반응벽체를 이용한 PCE로 오염된 지하수의 정화 (Remediation of PCE-contaminated Groundwater Using Permeable Reactive Barrier System with M0M-Bentonite)

  • 정성래;이달희
    • 한국지하수토양환경학회지:지하수토양환경
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    • 제17권4호
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    • pp.73-80
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    • 2012
  • The objectives of this research were to study the applicability and limitations of permeable reactive barrier (PRB) for the removal of tetrachloroethylene (PCE) from the groundwater. PRB column tests were conducted using reactive material with Moringa Oleifera Mass - Bentonite (Mom-Bentonite). Most of the PCE in the groundwater was degraded and/or captured (sorpted) in the zone containing activated material (MOM-Bentonite). The removal rate of PCE from the groundwater was 90% and 75% after 30 days and 180 days, respectively. The effect of micro-organisms on the long-term permeability and reactivity of the barrier is not well understood. MOM-Bentonite PRB system in this research has the potential to be developed into an environmentally and economically acceptable technology for the in situ remediation of PCE-contaminated groundwater.

Acid sphingomyelinase-mediated blood-brain barrier disruption in aging

  • Park, Min Hee;Jin, Hee Kyung;Bae, Jae-sung
    • BMB Reports
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    • 제52권2호
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    • pp.111-112
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    • 2019
  • Although many studies have reported that the breakdown of the blood-brain barrier (BBB) represents one of the major pathological changes in aging, the mechanism underlying this process remains relatively unexplored. In this study, we described that acid sphingomyelinase (ASM) derived from endothelial cells plays a critical role in BBB disruption in aging. ASM levels were elevated in the brain endothelium and plasma of aged humans and mice, resulting in BBB leakage through an increase in caveolae-mediated transcytosis. Moreover, ASM caused damage to the caveolae-cytoskeleton via protein phosphatase 1-mediated ezrin/radixin/moesin dephosphorylation in primary mouse brain endothelial cells. Mice overexpressing brain endothelial cell-specific ASM exhibited acceleration of BBB impairment and neuronal dysfunction. However, genetic inhibition and endothelial specific knock-down of ASM in mice improved BBB disruption and neurocognitive impairment during aging. Results of this study revealed a novel role of ASM in the regulation of BBB integrity and neuronal function in aging, thus highlighting the potential of ASM as a new therapeutic target for anti-aging.

퍼텐셜 필드를 이용한 이동 로봇의 경로 계획 (Path Planning of Mobile Robot using a Potential Field)

  • 정경권;강성호;정성부;엄기환
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2006년도 춘계종합학술대회
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    • pp.701-705
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    • 2006
  • 본 논문에서는 바퀴로 구성된 이동 로봇의 슬립 방지를 위한 경로 계획은 제안한다. 제안한 방식은 퍼텐셜 필드 경로 계획에서 척력에 대한 인위적인 힘을 평탄화 시키는 방식이다. 제안한 방식의 유용성을 확인하기 위하여 이동 로봇의 활동 영역에 C-obstacle이 존재하는 경우에 대해 시뮬레이션하여 제안한 방식의 성능이 기존 퍼텐셜 필드 방식보다 우수함을 확인하였다.

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Fabrication of Organic-Inorganic Superlattice Films Toward Potential Use For Gas Diffusion Barrier

  • 윤관혁;;성명모
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.394-394
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    • 2012
  • We fabricated organic-inorganic superlattice films using molecular layer deposition (MLD) and atomic layer deposition (ALD). The MLD is a gas phase process in the vacuum like to atomic layer deposition (ALD) and also relies on a self-terminating surface reaction of organic precursor which results in the formation of a monolayer in each sequence. In the MLD process, 'Alucone' is very famous organic thin film fabricated using MLD. Alucone layers were grown by repeated sequential surface reactions of trimethylaluminum and ethylene glycol at substrate temperature of $80^{\circ}C$. In addition, we developed UV-assisted $Al_2O_3$ with gas diffusion barrier property better than typical $Al_2O_3$. The UV light was very effective to obtain defect-free, high quality $Al_2O_3$ thin film which is determined by water vapor transmission rate (WVTR). Ellipsometry analysis showed a self-limiting surface reaction process and linear growth of each organic, inorganic film. Composition of the organic films was confirmed by infrared (IR) spectroscopy. Ultra-violet (UV) spectroscopy was employed to measure transparency of the organic-inorganic superlattice films. WVTR is calculated by Ca test. Organic-inorganic superlattice films using UV-assisted $Al_2O_3$ and alucone have possible use in gas diffusion barrier for OLED.

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An Analytical Model for the Threshold Voltage of Short-Channel Double-Material-Gate (DMG) MOSFETs with a Strained-Silicon (s-Si) Channel on Silicon-Germanium (SiGe) Substrates

  • Bhushan, Shiv;Sarangi, Santunu;Gopi, Krishna Saramekala;Santra, Abirmoya;Dubey, Sarvesh;Tiwari, Pramod Kumar
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제13권4호
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    • pp.367-380
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    • 2013
  • In this paper, an analytical threshold voltage model is developed for a short-channel double-material-gate (DMG) strained-silicon (s-Si) on silicon-germanium ($Si_{1-X}Ge_X$) MOSFET structure. The proposed threshold voltage model is based on the so called virtual-cathode potential formulation. The virtual-cathode potential is taken as minimum channel potential along the transverse direction of the channel and is derived from two-dimensional (2D) potential distribution of channel region. The 2D channel potential is formulated by solving the 2D Poisson's equation with suitable boundary conditions in both the strained-Si layer and relaxed $Si_{1-X}Ge_X$ layer. The effects of a number of device parameters like the Ge mole fraction, Si film thickness and gate-length ratio have been considered on threshold voltage. Further, the drain induced barrier lowering (DIBL) has also been analyzed for gate-length ratio and amount of strain variations. The validity of the present 2D analytical model is verified with ATLAS$^{TM}$, a 2D device simulator from Silvaco Inc.