• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.39-42
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• 2002

Recently, CMP (chemical mechanical polishing) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, COO (cost of ownership) and COC (cost of consumables) were relatively increased because of expensive slurry. In this paper, we have studied the possibility of recycle of reused silica slurry in order to reduce the costs of CMP slurry. The post-CMP thickness and within-wafer non-uniformity(WIWNU) were measured as a function of different slurry composition. As a experimental result, the performance of reused slurry with annealed silica abrasive of 2 wt% contents was showed high removal rate and low non-uniformity. Therefore, we propose two-step CMP process as follows In the first-step CMP, we can polish the thick and rough film surface using remaked slurry, and then, in the second-step CMP, we can polish the thin film and fine pattern using original slurry. In summary, we can expect the saving of high costs of slurry.

• Journal of the Korean institute of surface engineering
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• v.31 no.2
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• pp.117-126
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• 1998

In this study, the residue remaining on the silicon wafer during the oxide overetching using $C_4F_8/H_2$ helicon were plasmas and effects of various cleaning and annealing methods on the removal of the remaining residue were investigated. The addition of 30%$H_2$ to the C4F8 plasma increased the C/F ratio and the thickness of the residue on the etched silicon surface. Most of the residuse on the etched surfaces colud be removed by the oxygen plasmsa cleaning followed by thermal annealing over $450^{\circ}C$. Hydrogen-coataining residue formed on the silicon by 70%$C_4F_8/30%H_2$ helicon plasmas was more easily removed than hydrogen-free residue formed residue formed by $C_4F_8$ helicon wear plasmas. However, damage remaining on the silicon surface overetched using 70%$C_4F_8/30%H_2$ helicon plasmas was intensive and the degree of reocvery duing the post-annealing was lower.

• The Journal of the Korean dental association
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• v.58 no.2
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• pp.103-113
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• 2020

Background: Reduction malarplasty is one of the most popular facial contouring surgeries in east Asia for making patients' faces smaller. Currently in Korea, reduction malarplasty surgeries are performed mostly at plastic surgery clinics, but few cases are done at oral and maxillofacial surgery clinics. The reason might be because of post-operative complications after reduction malarplasty, such as undercorrection, overcorrection, asymmetry, cheek drooping, malunion, pain and noise. Those complications should be uneasy to be handled by oral and maxillofacial surgeons, however, they can be prevented by knowing the effective and safe reduction malarplasty techniques. Therefore, in this article the author as an oral and maxillofacial surgeon, would like to suggest safe and effective surgical methods for reduction malarplasty customized for Korean patients. Method: L- shape osteotomy of zygomatic body was performed with intraoral approach via vestibular incision, and the zygomatic arch was osteotomized with extraoral approach via sideburn incision. Then zygomatic complex was separated and rotated mesio-superiorly without removal of a bony strip and fixed with miniplates and microplates without making a bony gap. Conclusion: Surgical results were favorable and satisfied by the patients without cheek drooping, malunion, undercorrection and asymmetry.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.759-764
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• 2003

Recently, CMP (chemical mechanical polishing) technology has been widely used for global planarization of multi-level interconnection for ULSI applications. However, COO (cost of ownership) and COC (cost of consumables) were relatively increased because of expensive slurry. In this paper, we have studied the possibility of recycle of roused silica slurry in order to reduce the costs of CMP slurry. The post-CMP thickness and within-wafer non-uniformity (WIWNU) wore measured as a function of different slurry composition. As an experimental result, the performance of reused slurry with annealed silica abrasive of 2 wt％ contents was showed high removal rate and low non-uniformity. Therefore, we propose two-step CMP process as follows , In tile first-step CMP, we can polish the thick and rough film surface using remaked slurry, and then, in the second-step CMP, we can polish the thin film and fine pattern using original slurry. In summary, we can expect the saying of high costs of slurry.

• The Transactions of the Korea Information Processing Society
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• v.6 no.9
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• pp.2558-2562
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• 1999

This paper proposes on the methods of noise removal and edge extraction which is done by eliminating the ambiguities of the image using normalization and minimizing the entropy. Pre-existing methods have their own peculiarities and limitations, such as gray level distributions change very slowly or two regions which having similar gray level distribution are touched. This affects on the post processing such as feature extraction, as a result, this leads to false-recognition or no-recognition. Therefore, this paper proposes on the methods which overcome these problems. Finally, the effectiveness of this paper is demonstrated by several experiments.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.2
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• pp.131-136
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• 2000

We have investigated the slurry induced metallic contaminations of undoped and doped silicate oxides surface on CMP cleaning process. The metallic contaminations by CMP slurry were evaluated in four different oxide films, such as plasma enhanced tetra-ethyl-orthyo-silicate glass(PE-TEOS), O3 boro-phos-pho-silicate glass(O3-BPSG), PE-BPSG, and phospho-silicate glass(PSG). All films were polished with KOH-based slurry prior to entering the post-CMP cleaner. The Total X-Ray fluorescence(TXRF) measurements showed that all oxide surfaces are heavily contaminated by potassium and calcium during polishing which is due to a CMP slurry. The polished O3-BPSG films presented higher potassium and calcium contaminations compared to PE-TEOS because of a mobile ions gettering ability of phosphorus. For PSG oxides, the slurry induced mobile ion contamination increased with an increase of phosphorus contents. In addition, the polishing removal rate of PSG oxides had a linear relationship as a function of phosphorus contents.

• KSBB Journal
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• v.6 no.2
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• pp.135-141
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• 1991

This study thus looks into two treatment processess : i) Anaerobic digester coupled with hollow fibre membrane unit. Treatment of starch waste with anaerobic digester-membrane system was studied. $0.17\m^2$ area of hollow fibre membrane unit of known pore size was immersed into laboratory-scale anaerobic digestion system. The pore size of membrane was varied from 0.03 to $\0.15mu$m. The hydraulic retention time of anaerobic digester was varied from 1.5 to 10 days. The effect of hydraulic retention time on treatment efficiency was significant while effect of membrane size was not significant. The gas production was about 0.74㎥/kg COD treated. The COD removal efficient was about 80-95% depending on the hydraulic retention time. ii ) Crossflow ultrafiltration as post treatment to anaerobic filter. The effluent from anaerobic filter, which had a total COD in the range of 4,500-5,200 mg/L was treated by crossflow ultrafiltration units. The study conducted with different membrane pore size indicated that membrace with 1,000,000 molecular weight cut-off size gave a higher COD removal efficiency in the range of 83-87% while giving a study flux of $120-130 L/\m^2$.h. A study was conducted to see the long term clogging effect of membrane also.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.20-23
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing(CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Chemical-Mechanical polishing(CMP) of conductors is a key process in Damascene patterning of advanced interconnect structure. The effect of alternative commercial slurries pads, and post-CMP cleaning alternatives are discuss, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. Electroplated copper deposition is a mature process from a historical point of view, but a very young process from a CMP perspective. While copper electro deposition has been used and studied for decades, its application to Cu damascene wafer processing is only now gaining complete acceptance in the semiconductor industry. The polishing mechanism of Cu-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. however it is important to understand the effect of oxidizer on copper passivation layer in order to obtain higher removal rate and non-uniformity during Cu-CMP process. In this paper, we investigated the effects of oxidizer on Cu-CMP process regarding the additional volume of oxidizer.

• Korean Journal of Materials Research
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• v.29 no.8
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• pp.483-490
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• 2019

Currently, the Korean nuclear industry uses ZIRLO as material for nuclear fuel cladding(zirconium alloy). KEPCO Nuclear Fuel is in the process of developing a HANA alloy to enable domestic production of cladding. Cladding manufacture involves multistage heat treatments and pickling processes, the latter of which is vital for the removal of defects and impurities on the cladding surface. SMUT that forms on the cladding surface during such pickling process is a source of surface defects during heat treatment and post-treatment processes if not removed. This study analyzes ZIRLO, HANA-4, and HANA-6 alloy claddings to extensively study the SEM/EDS, XRD, and particle size characteristics of SMUT, which are second phase particles that are formed on the cladding surface during pickling processes. Using the analysis results, this study observes SMUT formation characteristics according to Nb concentration in Zr alloys during the washing process following the pickling process. In addition, this study observes SMUT removal characteristics on cladding surfaces according to concentrations of nitric acid and hydrofluoric acid in the acid solution.

• Journal of Electrochemical Science and Technology
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• v.13 no.1
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• pp.1-18
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• 2022

Persistent organic pollutants (POPs) and emerging pollutants (EP) are characterized by their difficulty to be removed through biological oxidation processes (BOPs); they persist in the environment and could have adverse effects on the aquatic ecosystem and human health. The electro-oxidation (EO) process has been successfully used as an alternative technique to oxidize many kinds of the aforementioned pollutants in wastewater. However, the EO process has been criticized for its high energy consumption cost and its potential generation of by-products. In order to decrease these drawbacks, its combination with biological oxidation processes has been reported as a solution to reduce costs and to reach high rates of recalcitrant pollutants removal from wastewaters. Thus, the location of EO in the treatment line is an important decision to make, since this decision affects the formation of by-products and biodegradability enhancement. This paper reviews the advantages and disadvantages of EO as a pre and post-treatment in combination with BOPs. A perspective of the EO scale-up is also presented, where hydrodynamics and the relationship of A/V (area of the electrode/working volume of the electrochemical cell) experiments are examined and discussed.