• Title/Summary/Keyword: Post process

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온도 및 잔류응력을 고려한 플라스틱 부품의 점탄성 해석 (Thermal Viscoelastic Analysis of Plastic Part Considering Residual Stress)

  • 문형일;김헌영;최철우;정갑식
    • 소성∙가공
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    • 제17권7호
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    • pp.496-500
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    • 2008
  • Plastics is commonly used in consumer electronics because of it is high strength per unit mass and good productivity. But plastic parts are usually distorted after injection molding due to the residual stress after filling, packing, cooling process, and etc. And plastic material is to be deteriorated according to various temperature conditions and operating time, which can be characterized by stress relaxation and creep. The viscoelastic behavior of plastic materials in time domain can be expressed by the Prony series of the commercial code, ABAQUS. In the paper, the process to predict the post deformation under cyclic thermal loadings was suggested. The process was applied to the real panel, and the deformation predicted by the analysis was compared with that of real test, which showed the possibility of applying the suggested process to predict the post deformation of plastic product under thermal loadings.

Implementation of Real-time Wheel Order Recognition System Based on the Predictive Parameters for Speaker's Intention

  • Moon, Serng-Bae;Jun, Seung-Hwan
    • 한국항해항만학회지
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    • 제35권7호
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    • pp.551-556
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    • 2011
  • In this paper new enhanced post-process predicting the speaker's intention was suggested to implement the real-time control module for ship's autopilot using speech recognition algorithm. The parameter was developed to predict the likeliest wheel order based on the previous order and expected to increase the recognition rate more than pre-recognition process depending on the universal speech recognition algorithms. The values of parameter were assessed by five certified deck officers being good at conning vessel. And the entire wheel order recognition process were programmed to TMS320C5416 DSP so that the system could recognize the speaker's orders and control the autopilot in real-time. We conducted some experiments to verify the usefulness of suggested module. As a result, we have confirmed that the post-recognition process module could make good enough accuracy in recognition capabilities to realize the autopilot being operated by the speech recognition system.

Views on the low-resistant bus materials and their process architecture for the large-sized & post-ultra definition TFT-LCD

  • Song, Jean-Ho;Ning, Hong-Long;Lee, Woo-Geun;Kim, Shi-Yul;Kim, Sang-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.9-12
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    • 2008
  • For the large-sized and post-ultra definition TFT-LCD, improved drivability is prerequisite not only for the integration of driving circuit on glass but also for the chargeability of each pixel. In order to meet required drivability, currently adopted process architecture and materials are modified for the RC delay reduction, including the drastic increase of gate bus thickness and its related solution for step coverage. We present new process architecture and material selection for the next generation TFT-LCD devices.

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근사모델과 후처리를 이용한 트러스 구조물의 이산 치수설계 (Discrete Sizing Design of Truss Structure Using an Approximate Model and Post-Processing)

  • 이권희
    • 한국기계가공학회지
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    • 제19권5호
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    • pp.27-37
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    • 2020
  • Structural optimization problems with discrete design variables require more function calculations (or finite element analyses) than those in the continuous design space. In this study, a method to find an optimal solution in the discrete design of the truss structure is presented, reducing the number of function calculations. Because a continuous optimal solution is the Karush-Kuhn-Tucker point that satisfies the optimality condition, it is assumed that the discrete optimal solution is around the continuous optimum. Then, response values such as weight, displacement, and stress are predicted using approximate models-referred to as hybrid metamodels-within specified design ranges. The discrete design method using the hybrid metamodels is used as a post-process of the continuous optimization process. Standard truss design problems of 10-bar, 25-bar, 15-bar, and 52-bar are solved to show the usefulness of this method. The results are compared with those of existing methods.

Effects of One-Time Post-Annealing(OPTA) Process on the Electrical Properties of Metal- Insulator-Metal Type Thin-Film

  • Lee, Myung-Jae;Chung, Kwan-Soo
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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    • pp.273-276
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    • 2001
  • The origin of image-slicking in metal-insulator-metal type thin-film-diode(TFD) LCDs is the asymmetric current-voltage(I-V) characteristic of TFD element. we developed that MIM-LCDs have reduced-image-sticking and perfect symmetry characteristic. One-Time Post-Annealing (OPTA) heat treatment process was introduced to reduce the asymmetry and shift of the I-V characteristics, respectively. OPTA means that the whole layers of lower metal, insulator, and uuper metal are annealed at one time. The treatment temperatures and fabricated process of TFD element were under foot. Also, this low temperature fabricated process allows the application of plastic substrates.

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구리 CMP 후 연마입자 제거에 버프 세정의 효과 (Effect of buffing on particle removal in post-Cu CMP cleaning)

  • 김영민;조한철;정해도
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2008년도 추계학술대회A
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    • pp.1880-1884
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    • 2008
  • Cleaning is required following CMP (chemical mechanical planarization) to remove particles. The minimization of particle residue is required with each successive technology generation, and the cleaning of wafers becomes more complicated. In copper damascene process for interconnection structure, it utilizes 2-steop CMP consists of Cu CMP and barrier CMP. Such a 2-steps CMP process leaves a lot of abrasive particles on the wafer surface, cleaning is required to remove abrasive particles. In this study, the buffing is performed various conditions as a cleaning process. The buffing process combined mechanical cleaning by friction between a wafer and a buffing pad and chemical cleaning by buffing solution consists of tetramethyl ammonium hydroxide (TMAH)/benzotriazole(BTA).

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온도 및 잔류응력을 고려한 플라스틱 부품의 점탄성 해석 (Thermal Viscoelastic Analysis of Plastic Part Considering Residual Stress)

  • 문형일;김헌영;최철우;정갑식
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2008년도 춘계학술대회 논문집
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    • pp.288-292
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    • 2008
  • Plastics is commonly used in consumer electronics because of it is high strength per unit mass and good productivity. But plastic parts are usually distorted after injection molding due to the residual stress after filling, packing, cooling process, and etc. And plastic material is to be deteriorated according to various temperature conditions and operating time, which can be characterized by stress relaxation and creep. The viscoelastic behaviour of plastic materials in time domain can be expressed by the Prony series of the commercial code, ABAQUS. In the paper, the process to predict the post deformation under cyclic thermal loadings was suggested. The process was applied to the real panel, and the deformation predicted by the analysis was compared with that of real test, which showed the possibility of applying the suggested process to predict the post deformation of plastic product under thermal loadings.

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Feasibility study on developing productivity and quality improved three dimensional printing process

  • Lee, Won-Hee;Kim, Dong-Soo;Lee, Taik-Min;Lee, Min-Cheol
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 2005년도 ICCAS
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    • pp.2160-2163
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    • 2005
  • Solid freeform fabrication (SFF) technology plays a major role in industry and represents a reasonable percentage of industrial rapid prototyping/tooling/manufacturing (RP/RT/RM) development applications. However, SFF technology still has long way to progress to achieve satisfactory process speed, surface finish and overall quality improvement of its application. Today, three dimensional printing (3DP) technique that is one of SFF technology is receiving many interests, and is applied by various fields. It can fabricate three dimensional objects of solid freeform with high speed and low cost using ink jet printing technology. However, need long curing time after manufacture completion. And it must do post-processing process necessarily to heighten strength of objects because strength of fabricated objects is very weak. Therefore, in this study, we proposed an improved 3DP process that can solve problems of conventional 3DP process. The general 3DP process is method to spout binder simply through printer head on powder, but proposed process is method to cure jetted UV resin by UV lamp after jet UV resin using printhead on powder. The hardening of resin is achieved strongly at early time by UV lamp in proposed method. So, the proposed process can fabricate three dimensional objects with high speed without any post-processing.

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산화막 CMP의 연마율 및 비균일도 특성 (Removal Rate and Non-Uniformity Characteristics of Oxide CMP (Chemical Mechanical polishing))

  • 정소영;박성우;박창준;이경진;김기욱;김철복;김상용;서용진
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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    • pp.223-227
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    • 2002
  • As the channel length of device shrinks below $0.13{\mu}m$, CMP(chemical mechanical polishing) process got into key process for global planarization in the chip manufacturing process. The removal rate and non-uniformity of the CMP characteristics occupy an important position to CMP process control. Especially, the post-CMP thickness variation depends on the device yield as well as the stability of subsequent process. In this paper, every wafer polished two times for the improvement of oxide CMP process characteristics. Then, we discussed the removal rate and non-uniformity characteristics of post-CMP process. As a result of CMP experiment, we have obtained within-wafer non-uniformity (WIWNU) below 4 [%], and wafer-to-wafer non-uniformity (WTWNU) within 3.5 [%]. It is very good result, because the reliable non-uniformity of CMP process is within 5 [%].

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The improvement of electrical properties of InGaZnO (IGZO)4(IGZO) TFT by treating post-annealing process in different temperatures.

  • Kim, Soon-Jae;Lee, Hoo-Jeong;Yoo, Hee-Jun;Park, Gum-Hee;Kim, Tae-Wook;Roh, Yong-Han
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.169-169
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    • 2010
  • As display industry requires various applications for future display technology, which can guarantees high level of flexibility and transparency on display panel, oxide semiconductor materials are regarded as one of the best candidates. $InGaZnO_4$(IGZO) has gathered much attention as a post-transition metal oxide used in active layer in thin-film transistor. Due to its high mobility fabricated at low temperature fabrication process, which is proper for application to display backplanes and use in flexible and/or transparent electronics. Electrical performance of amorphous oxide semiconductors depends on the resistance of the interface between source/drain metal contact and active layer. It is also affected by sheet resistance on IGZO thin film. Controlling contact/sheet resistance has been a hot issue for improving electrical properties of AOS(Amorphous oxide semiconductor). To overcome this problem, post-annealing has been introduced. In other words, through post-annealing process, saturation mobility, on/off ratio, drain current of the device all increase. In this research, we studied on the relation between device's resistance and post-annealing temperature. So far as many post-annealing effects have been reported, this research especially analyzed the change of electrical properties by increasing post-annealing temperature. We fabricated 6 main samples. After a-IGZO deposition, Samples were post-annealed in 5 different temperatures; as-deposited, $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, $400^{\circ}C$ and $500^{\circ}C$. Metal deposition was done on these samples by using Mo through E-beam evaporation. For analysis, three analysis methods were used; IV-characteristics by probe station, surface roughness by AFM, metal oxidation by FE-SEM. Experimental results say that contact resistance increased because of the metal oxidation on metal contact and rough surface of a-IGZO layer. we can suggest some of the possible solutions to overcome resistance effect for the improvement of TFT electrical performances.

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