• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.54-57
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• 2003

[ $HfO_xN_y$ ] films using a hafnium tertiary-butoxide $(Hf[OC(CH_3)_3]_4)$ in plasma and $N_2$ ambient were prepared to improve the thermal stability of hafnium-based gate dielectrics. A 10% nitrogen incorporation into $HfO_2$ films showed a smooth surface morphology and a crystallization temperature as high as $200^{\circ}C$ compared with pure $HfO_2$ films. The $TaN/HfO_xN_y/Si$ capacitors showed a stable capacitance-voltage characteristics even at post-metal annealing temperature of $1000^{\circ}C$ in $N_2$ ambient and a constant value of 1.6 nm EOT (equivalent oxide thickness) irrespective of an increase of PDA and PMA temperature. Leakage current densities of $HfO_xN_y$ capacitors annealed at PDA temperature of 800 and $900^{\circ}C$, respectively were approximately one order of magnitude lower than that of $HfO_2$ capacitors.

• Journal of Welding and Joining
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• v.31 no.5
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• pp.47-53
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• 2013

We have investigated the traits of clad metals in hot-rolled clad steel plates, including the sensitization and mechanical properties of STS 316 steel plate and carbon steel (A516), under various specific circumstances regarding post heat treatment, multilayered welds, and thick or repeated welds for repair. For evaluations, sectioned weldments and external surfaces were investigated to reveal the degree of sensitization by micro vickers hardness, tensile, and etching tests the results were compared with those of EPR tests. The clad steel plates were butt-welded using FCAW and SAW with the time of heat treatment as the variable, a that was conducted at $625^{\circ}C$, for 80, 160, 320, 640, and 1280 min. Then, the change in corrosion resistance was evaluated in these specimens. With carbon steel (A516), as the heat treatment time increased, the annealing effect caused the tensile strength to decrease. The micro-hardness gradually increased and decreased after 640 min. The elongation and contraction of the area also increased gradually. The oxalic acid etch test and EPR test on STS316 and the clad metal showed STEP structure and no sensitization. From the test results on multi-layered and repair welds, it could be concluded that there is no effect on the corrosion resistance of clad metals. The purpose of this study was to suggest some considerations for developing on-site techniques to evaluate the sensitization of stainless steels.

• Nuclear Engineering and Technology
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• v.22 no.4
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• pp.337-350
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• 1990

A post-irradiation annealing study was conducted with use of reactor pressure vessel(RPV) steel A533B Cl.1 base metal irradiated to a dose of 4.84$\times$10$^{18}$ n/$\textrm{cm}^2$ at about 38$0^{\circ}C$. Microhardness and positron annihilation (PA) methods were used to obtain better understanding of the recovery of radiation hardening. Isochronal anneal experiments indicated that two recovery processes occur during annealing of irradiated specimens. The first recovery process occurs in the temperature range of 280-3O5$^{\circ}C$, Michrohardness and positron annihilation (PA) methods were used to obtain better understanding of the recovery of radiation hardening. Isochronal anneal experiments indicated that two recovery processes occur during annealing of irradiated specimens. The first recovery process occurrs in the temperature range of 280-305$^{\circ}C$. The variations of Ip, Iw and R parameters indicated that the formation of vacancy clusters by vacancy agglomeration and the annihilation of monovacancies are the first recovery process. The second recovery process occurs in the range of 405-49$0^{\circ}C$ and positron annihilation parameters measured indicated that the dissolution of carbon atoms decorated around vacancy-type defects and possible precipitates, and the annihilation of monovacancies give rise to the second recovery process. It was further indicated that radiation anneal hardening (RAH) in the range of 305-405$^{\circ}C$ between the temperature ranges for the two processes occurs due to the formation of carbon-decorated vacancy clusters and precipitates. The activation energies, orders of reaction and other characteristics of recovery processes were determined by the Meechan-Brinkman method. The activation energy for the first recovery process was determined as 1.76 eV and that for the second recovery process as 2.00eV. These values are lower than those obtained by other workers. This difference may be attributed to the lower copper content of the RPV steel used in the present study. The order of reaction for the first recovery process was determined as 1.78, while that for the second recovery process as 1.67 Non-integer orders of reaction for recovery processes seem to be attributed to the fact that several mechanisms for the first order and the second order of reaction are compounded in one process. This result also supports for the above conclusions from measurements of PA parameters.

• Korean Journal of Materials Research
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• v.10 no.6
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• pp.437-444
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• 2000

We investigated the effect of substrate temperature, chemical composition and post-deposition heat-treatment on the crystal structure and electrical transport of $La_{1-x}Sr_xMnO_{3-{\delta}}$(0.19${\leq}x{\leq}$0.31) thin films. As-prepared $La_{1-x}Sr_xMnO_{3-{\delta}}$ films grown at $500^{\circ}C$ by sputter techniques were found to have the pseudo-tetragonal system(a/c=0.97) and a highly preferential <001> orientation. The films were changed to be of the cubic system by post-deposition annealing at around $900^{\circ}C$. A main target of $La_{0.67}Sr_{0.33}MnO_3$ as well as auxliary targets of $La_{0.3}Sr_{0.7}MnO_3$ ceramics were co-sputtered to control the chemical composition of the film. The Sr content(x) of the film ranged from 0.19 to 0.31, depending on the number of the auxiliary target. When x increased from 0.19 to 0.31, the electrical resistivity of the film decreased and the transition temperature between metal and semiconductor shifted to higher temperature. With a magnetic field of 0.18 T, the magneto-resistance ratio (MR(%) = (${\rho}_o-{\rho}_H/{\rho}_H$) of the $La_{0.69}Sr_{0.31}MnO_3$ thin film was about 390%.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.4
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• pp.41-45
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• 2021

In this study, in order to secure the high reliability of the memristor, we adopted a patterned lithium filament seed layer as the main agent for resistive switching (RS) characteristic on the 30 nm thick ZrO₂ thin film at the device manufacturing stage. Lithium filament seed layer with a thickness of 5 nm and an area of 5 ㎛ × 5 ㎛ were formed on the ZrO₂ thin film, and various electrode areas were applied to investigate the effect of capacitance on filament type memristive behavior in the parallel memristive circuit of memristor and capacitor. The RS characteristics were measured in the samples before and after 250℃ post-annealing for lithium metal diffusion. In the case of conductive filaments formed by thermal diffusion (post-annealed sample), it was not available to control the filament by applying voltage, and the other hand, the as-deposited sample showed the reversible RS characteristics by the formation and rupture of filaments. Finally, via the comparison of the RS characteristics according to the electrode area, it was confirmed that capacitance is an important factor for the formation and rupture of filaments.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.4
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• pp.202-208
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• 2001

In Recent results suggested that doping $Ta_2O_5$ with a small amount of $TiO_2$ using standard ceramic processing techniques can increase the dielectric constant of $Ta_2O_5$ significantly. In this paper, this concept is studied using RTCVD (Rapid Thermal Chemical Vapor Deposition). Ti-doped $Ta_2O_5$ films are deposited using $TaC_{12}H_{30}O_5N$, $C_8H_{24}N_4Ti$, and $O_2$ on both Si and $NH_3$-nitrided Si substrates. An $NH_3$-based interface layer at the Si surface is used to prevent interfacial oxidation during the CVD process and post deposition annealing is performed in $H_2/O_2$ ambient to improve film quality and reduce leakage current. A sputtered TiN layer is used as a diffusion barrier between the Al gate electrode and the $TaTi_xO_y$ dielectric. XPS analyses confirm the formation of a ($Ta_2O_5)_{1-x}(TiO_2)_x$ composite oxide. A high quality $TaTi_xO_y$ gate stack with EOT (Equivalent Oxide Thickness) of $7{\AA}$ and leakage current $Jg=O.5A/textrm{cm}^2$ @ Vg=-1.0V has been achieved. We have also succeeded in forming a $TaTi_x/O_y$ composite oxide by rapid thermal oxidation of the as-deposited CVD TaTi films. The electrical properties and Jg-EOT characteristics of these composite oxides are remarkably similar to that of RTCVD $Ta_2O_5, suggesting that the dielectric constant of $Ta_2O_5$ is not affected by the addition of $TiO_2$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.599-604
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• 1998

We have investigated Pt and $RuO_2$ as a bottom electrode for ferroelectric capacitor applications. The bottom electrodes were prepared by using an RF magnetron sputtering method. Some of the investigated parameters were a substrate temperature, gas flow rate, RF power for the film growth, and post annealing effect. The substrate temperature strongly influenced the surface morphology and resistivity of the bottom electrodes as well as the film crystallographic structure. XRD results on Pt films showed a mixed phase of (111) and (200) peak for the substrate temperature ranged from RT to $200^{\circ}C$, and a preferred (111) orientation for $300^{\circ}C$. From the XRD and AFM results, we recommend the substrate temperature of $300^{\circ}C$ and RF power 80W for the Pt bottom electrode growth. With the variation of an oxygen partial pressure from 0 to 50%, we learned that only Ru metal was grown with 0~5% of $O_2$ gas, mixed phase of Ru and $RuO_2$ for $O_ 2$ partial pressure between 10~40%, and a pure $RuO_2$ phase with $O_2$ partial pressure of 50%. This result indicates that a double layer of $RuO_2/Ru$ can be grown in a process with the modulation of gas flow rate. Double layer structure is expected to reduce the fatigue problem while keeping a low electrical resistivity. As post anneal temperature was increased from RT to $700^{\circ}C$, the resistivity of Pt and $RuO_2$ was decreased linearly. This paper presents the optimized process conditions of the bottom electrodes for memory device applications.