• Korean Journal of Materials Research
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• v.9 no.5
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• pp.484-490
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• 1999

$(Pb,La)TiO_3$(PLT) thin films were prepared on Pt/SiO$_2$/Si substrates by the sol-gel method and investigated the crystalline and electrical properties according to La concentration and post-annealing temperatures. The PLT films annealed at above $600^{\circ}C$ were exhibited the typical perovskite structures regardless of La contents. When the $(Pb,La)TiO_3$(PT) films were doped with La concentration up to 10mol%(PLT-10), the degree of z-axis orientation was greatly decreased from 63% to 26%. From AES depth profiles for the PLT-10 samples, no remarkable inter-reaction between PLT film and lower Pt electrode was found. The remanent polarization$(2Pr,Pr_+-Pr_-)$ were increased from $4\muC\textrm{cm}^2 to 16\muC\textrm{cm}^2$ as the annealing temperature increased from $600^{\circ}C to 700^{\circ}C$. This result may be ascribed to the improvement of crystallinity by the high temperature post-annealing. The dielectric constant$({\varepsilon}r)$ and tangent loss(tan$\delta$) of the PLT-10 films annealed at $650^{\circ}C$ were about 193 and 0.02, respectively with the pyroelectric coefficient($\gamma$) of around $4.0nC/\textrm{cm}^2{\cdot}^{\circ}C at 30^{\circ}C$.

• 전자공학회논문지 IE
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• v.44 no.2
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• pp.26-31
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• 2007

A surface treatment was performed after the screen printing of a carbon nanotube paste for obtaining the carbon nanotube field emission array(CNT FEA) on the soda-lime glass substrate. In this experiment, Ar ion bombardment was applied as an effective surface treatment method. After making a cathode electrode on the glass substrate, photo sensitive CNT paste was screen-printed, and then back-side was exposure by uv light. Then, the exposed CNT paste was selectively remained by development. After post-baking, the remained CNT paste was bombarded by accelerated Ar ions for removing some binders and exposing only CNTs. As results, the field emission characteristics were strongly depended on the accelerating energy. At 100 eV, the emission was highest and as the acceleration energy increases more then 100 eV, the emission decreased. This was due to the removal of CNT itself as well as binders.

• Transactions on Electrical and Electronic Materials
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• v.15 no.4
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• pp.198-200
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• 2014

100 nm thick Ga doped ZnO (GZO) thin films were deposited with RF magnetron sputtering on polyethylene terephthalate (PET) and ZnO coated PET substrate and then the effect of the ZnO thickness on the optical and electrical properties of the GZO films was investigated. GZO single layer films had an optical transmittance of 83.7% in the visible wavelength region and a sheet resistance of $2.41{\Omega}/{\square}$, while the optical and electrical properties of the GZO/ZnO bi-layered films were influenced by the thickness of the ZnO buffer layer. GZO films with a 20 nm thick ZnO buffer layer showed a lower sheet resistance of $1.45{\Omega}/{\square}$ and an optical transmittance of 85.9%. As the thickness of ZnO buffer layer in GZO/ZnO bi-layered films increased, both the conductivity and optical transmittance in the visible wavelength region were increased. Based on the figure of merit (FOM), it can be concluded that the ZnO buffer layer effectively increases the optical and electrical performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.7
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• pp.968-975
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• 2014

This paper proposed a evaluation method for individual's subjective preferred location using EEG and emotional assessment. Visual stimulus were sequentially presented a total six points(the top and the bottom of the left, the top and the bottom of the center and the top and the bottom of the right on the screen). EEG were measured from twenty subjects according to each six points. At the same time, we were executed evaluation of subjects preferred location from emotional assessment. Alpha and beta wave were measured in Fp1, Fp2, F7 and F8 location, followed by ten to twenty electrode system. Correlations and variations of alpha and beta wave from each channel were calculated and analyzed. Because of the number of subjects population under 30, we used Speareman test for a correlation analysis between alpha and beta wave. Also, emotional assessments which compose of visual sense harmony, visual sense stability, stability of position and the visibility were performed and were analyzed by average and frequency. After visual stimulus, emotional assessments were performed. From the variance analysis of EEG, beta wave from F7 was appeared statistically significant as significance probability of 0.006. Also, between alpha wave and beta wave appeared a negative correlation(r=-0.190). From the post-hoc test of F7 beta wave, location 1, 5 and 6 appeared to difference statistically significant. Emotional assessment result according to six positions showed 0.00 significance probability. Thus, location and emotional assessment appeared to influence on each other. From the average and frequency analysis of emotional assessment, location 2 showed obtained of best emotional assessment score and appeared lower beta wave than other locations. Finally, most subjects showed a preference for location 2. Through obtained results in this paper, will be helpful to about human emotional assessment and EEG research.

• Transactions on Electrical and Electronic Materials
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• v.14 no.6
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• pp.321-323
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• 2013

100 nm thick Ga doped ZnO (GZO) thin films were deposited with DC and RF magnetron sputtering at room temperature on glass substrate and Al coated glass substrate, respectively. and the effect of the Al underlayer on the optical and electrical properties of the GZO films was investigated. As-deposited GZO single layer films had an optical transmittance of 80% in the visible wavelength region, and sheet resistance of 1,516 ${\Omega}/{\Box}$, while the optical and electrical properties of GZO/Al bi-layered films were influenced by the thickness of the Al buffer layer. GZO films with 2 nm thick Al film show a lower sheet resistance of 990 ${\Omega}/{\Box}$, and an optical transmittance of 78%. Based on the figure of merit (FOM), it can be concluded that the thin Al buffer layer effectively increases the performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.288-294
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• 2009

Various polymer electrolyte membrane fuel cell (PEMFC) startup procedures were tested to explore possible techniques for reducing performance decay and improving durability during repeated startup-shutdown cycles. The effects of applying a dummy load, which prevents cell reversal by consuming the air at the cathode, on the degradation of a membrane electrode assembly (MEA) were investigated via single cell experiments. The electrochemical results showed that application of a dummy load during the startup procedure significantly reduced the performance decay, the decrease in the electrochemically active surface area (EAS), and the increase in the charge transfer resistance ($R_{ct}$), which resulted in a dramatic improvement in durability. After 1200 startup-shutdown cycles, post-mortem analyses were carried out to investigate the degradation mechanisms via various physicochemical methods including FESEM, an on-line $CO_2$ analysis, EPMA, XRD, FETEM, SAED, FTIR. After 1200 startup-shutdown cycles, severe Pt particle sintering/agglomeration/dissolution and carbon corrosion were observed at the cathode catalyst layer when starting up a PEMFC without a dummy load, which significantly contributed to a loss of Pt surface area, and thus to cell performance degradation. However, applying a dummy load during the startup procedure remarkably mitigated such severe degradations, and should be used to increase the durability of MEAs in PEMFCs. Our results suggest that starting up PEMFCs while applying a dummy load is an effective method for mitigating performance degradation caused by reverse current under a repetition of unprotected startup cycles.

• Journal of Korean Physical Therapy Science
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• v.10 no.2
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• pp.96-103
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• 2003

The purpose of this study was to assess the effect of applied pressure to abdomen on lumbar and abdominal muscle activation during upper limb exercise. The experimental group consisted of twenty-seven healthy male subjects (mean age=$22.40{\pm}2.19years$, mean height=$175.30{\pm}2.19cm$, mean weight= $67.67{\pm}7.44kg$, RM=$8.43{\pm}2.76kg$). In each different pressure condition (OmmHg, 30mmHg, 70mmHg, 100mmHg), upper limb exercise was performed in total of 10 trials with 10 RM dumb-bell exercise. Lumbar and abdominal muscle activity was measured using surface bipolar electrode electromyography(EMG). EMG activity was measured from upper rectus abdominis, external oblique abdominis, internal oblique abdominis, and elector spinae. The raw EMG signal was processed into the root mean square(RMS). All RMS EMG data were normalized and express as a percentage of the EMG(%EMG). Collected data were statistically analyzed by SPSS/PC Ver 10.0 using two-way analysis of variance for repeated measures($4{\pm}3$) and Bonferroni post hoc, test. Lumbar and abdominal muscle activation was significantly increased when 100 mmHg was applied(p<.05). Upper rectus abdominis activation was significantly increased compared as other muscles activation(p<.05). However, there were no interaction between pressure and muscles(p>.05). The findings of this study can be used as a fundamental data when lumbar orthosis is applied and external pressure can be used as a therapeutic tool.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.624-627
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• 2003

The BLT thin-films were one of the promising ferroelectric materials with a good leakage current and degradation behavior on Pt electrode. The BLT target was sintered at $1100^{\circ}C$ for 4 hours at the air ambient. $Bi_{3.25}La_{0.75}Ti_3O_{12}$ (BLT) thin-film deposited on $Pt/Ti/SIO_2/Si$ wafer by rf magnetron sputtering method. At annealed $700^{\circ}C$, (117) and (006) peaks appeared the high intensity. The hysteresis loop of the BLT thin films showed that the remanent polarization ($2Pr=Pr^+-Pr^-$) was $16uC/cm^2$ and leakage current density was $1.8{\times}10^{-9}A/cm^2$ at 50 kV/cm with coersive electric field when BLT thin-films were annealed at $700^{\circ}C$. Also, the thin film showed fatigue property at least up to $10^{10}$ switching bipolar pulse cycles under 7 V. Therefore, we induce access to optimum fabrication condition of memory device application by rf-magnetron sputtering method in this report.

• Korean Journal of Materials Research
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• v.12 no.12
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• pp.918-923
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• 2002

In this work, CdTe films were deposited on CdS/ITO/glass substrate by a close spaced sublimation (CSS) method. A $Cu_2$Te layer was deposited on the CdTe film by evaporating $Cu_2$Te powder. Then the samples were annealed for p+ ohmic contact. TEM and XRD analysis showed that $CdTe/Cu_2$Te interface exhibited different forms with various annealing temperature. A good p+ ohmic contact was achieved when the annealing temperature was between $180^{\circ}C$ to $200^{\circ}C$. Best cell efficiency of 12.34% was obtained when post annealing temperature was $200^{\circ}C$ for 5 min. Thermal stress test of the CdS/CdTe cells with carbon back contact showed that the $Cu_2$Te contact was stable at $50^{\circ}C$ in $N_2$ and was slowly degraded at $100^{\circ}C$ in $N_2$. In comparison to the conventional carbon contact, the $Cu_2$Te contact showed a better thermal stability.

• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.135-140
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• 2002

In this paper, We deposited the BST thin-film on p-type (100)Si, (100)MgO and MgO/Si substrates respectively using RF magnetron sputtering method. After the BST thin-fil m was deposited, we performed RTA(rapid thermal anneal) at $600^{\circ}C$, oxygen atmosphere and 1 min. In the XRD measurement, we observed the (110) $Ba_{0.5}Sr_{0.5}TiO_3$ main peak in all samples and the peak intensity increased after post annealing. Then we manufactured a capacitor using Al Electrode and measured I-V, C-V. In C-V measurement result values for each substrate, dielectric constant was calculated 120 (bare Si), 305(MgO/Si), 310(MgO) respectively. A leakage current density was present less than 1 $\mu\textrm{A/cm}^2$ at applied fields below 0.3 MV/cm. In conclusion we confirmed that MgO/Si substrates give good results for BST thin-film deposition.