• Food Science and Preservation
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• v.17 no.3
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• pp.405-409
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• 2010

Surface cleaning is both essential and troublesome when a consumer seeks to eliminate soil attached to the surface of fresh ginseng because all ginseng purchased in the market is covered with soil, reflecting the post-harvest situation. To facilitate ginseng use at home, a fresh-cut type of ginseng is required. As a first step toward production of such ginseng, several washing and dipping treatments were investigated with respect to surface cleaning and reduction of microbial populations on fresh ginseng. In terms of microbial distribution on the surface of fresh ginseng, higher levels of viable bacteria (6.63 log CFU/each) and fungi (5.12 log CFU/each) were present on the rhizome head than on other regions of the root. Of the washing treatments tested, hand-brushing was effective for surface cleaning and to reduce microorganism levels on fresh ginseng, but use of a high-pressure water spray followed by hand-brushing was optimally effective. To further reduce the levelsof microorganisms on the surface of fresh ginseng after washing, additional dipping treatments in 70% (v/v) ethanol and electrolyzed acidic water (at pH 2.3) were somewhat effective but showed no significant differences compared with other dipping treatments tested, including a 3 ppm ozone solution, a 200 ppm sodium hypochlorite solution, or hot water at $50^{\circ}C$.

• Korean Chemical Engineering Research
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• v.54 no.4
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• pp.548-554
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• 2016

In this study, semi-aqueous solutions containing carboxylic acids such as oxalic acid (OA), lactic acid (LA) and citric acid (CA) were formulated for the removal of copper etching residues produced at the interconnection process, and their characteristics were analyzed. Carboxylic acids in the solutions were apt to form various copper complexes according to the value of pH. Semi-aqueous solution containing 10 wt% CA showed the lowest etching rate of copper in the range from pH2 to pH7 and the highest selectivity in the range of pH 2 to pH 4. However, the cleaning solution containing 10 wt% LA revealed the superior selectivity at the range from pH 5 to pH 7. Appropriate selection of carboxylic acid should be required to improve the performance of cleaning solution. In the case of CA, the etching selectivity of copper oxide complex to copper was increased with the concentration of CA in the solution, when the solutions contain over 5 wt% CA, the copper interconnection layer has a metallic copper surface more than 88% in the area. The result shows that CA contained semi-aqueous solution has a relatively good cleaning ability.

• Textile Coloration and Finishing
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• v.22 no.3
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• pp.194-206
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• 2010

This study was carried out to identify the optimum dyeing conditions for maximum dye uptake of Prunus yedoensis Matsumura flower extract on silk fabric and to investigate hue/tone characteristics and fastness properties of the dyed fabrics. As results, the flower extract was found to contain flavonoids by FT-IR and to show yellowish shade by UV-vis spectrum. Silk fabric was optimized for maximum dye uptake to five repetitions of dyeing at $80^{\circ}C$ for 60 min with an extract concentration of 600% owf in terms of both K/S and color differences. Pre-mordanting was more effective to dye uptake than post-mordanting for all of the mordants used. Un-mordanted and pre-mordanted fabric showed YR(Yellow Red) while most of post-mordanted ones did Y(Yellow). Main tones of dyed fabrics were sf(soft) and lt(light) in the case of unmordanting or Al-mordanting whereas they were d(dull) and g(grayish) by post-mordanting with Cu, Cr, and Fe, respectively. The fastness grades to rub and dry cleaning were reasonably good for most dyeing conditions while those to light were poor. Finally dyeing condition for each hue/tone of the dyed silk with the flower extract was optimized considering fastness properties.

• Korean Journal of Materials Research
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• v.18 no.4
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• pp.204-210
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• 2008

$1.5\;{\mu}m$-thick copper films deposited on silicon wafers were successfully bonded at $415^{\circ}C$/25 kN for 40 minutes in a thermo-compression bonding method that did not involve a pre-cleaning or pre-annealing process. The original copper bonding interface disappeared and showed a homogeneous microstructure with few voids at the original bonding interface. Quantitative interfacial adhesion energies were greater than $10.4\;J/m^2$ as measured via a four-point bending test. Post-bonding annealing at a temperature that was less than $300^{\circ}C$ had only a slight effect on the bonding energy, whereas an oxygen environment significantly deteriorated the bonding energy over $400^{\circ}C$. This was most likely due to the fast growth of brittle interfacial oxides. Therefore, the annealing environment and temperature conditions greatly affect the interfacial bonding energy and reliability in Cu-Cu bonded wafer stacks.

• The Journal of Advanced Prosthodontics
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• v.14 no.1
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• pp.45-55
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• 2022

PURPOSE. This in vitro study investigates the effect of different post-rinsing times and methods on the trueness and precision of denture base resin manufactured through stereolithography. MATERIALS AND METHODS. Ninety clear photopolymer resin specimens were fabricated and divided into nine groups (n = 10) based on rinsing times and methods. All specimens were rinsed with 99% isopropanol alcohol for 5, 10, and 15 min using three methods-automated, ultrasonic cleaning, and hand washing. The specimens were polymerized for 30 min at 40℃. For trueness, the scanned intaglio surface of each SLA denture base was superimposed on the original standard tessellation language (STL) file using best-fit alignment (n = 10). For precision, the scanned intaglio surface of the STL file in each specimen group was superimposed across each specimen (n = 45). The root mean square error (RMSE) was measured, and the data were analyzed statistically through one-way ANOVA and Tukey test (α < .05). RESULTS. The 10-min automated group exhibited the lowest RMSE. For trueness, this was significantly different from specimens in the 5-min hand-washed group (P < .05). For precision, this was significantly different from those of other groups (P < .05), except for the 15-min automated and 15-min ultrasonic groups. The color map results indicated that the 10-min automated method exhibited the most uniform distribution of the intaglio surface adaptation. CONCLUSION. The optimal postprocessing rinsing times and methods for achieving clear photopolymer resin were found to be the automated method with rinsing times of 10 and 15 min, and the ultrasonic method with a rinsing time of 15 min.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1600-1604
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis of used slurry.

• Journal of Environmental Science International
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• v.7 no.1
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• pp.74-80
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• 1998

Because permeate flux was very low as It has the suspension soled of higher concentration In the trafiltration membrane separation treatment of dyestuff wastewater, pre-treatment of Ponton reaction was carried out. In the case of pH 3, COD removal rate was the hi각erst of 58%. When PAC was added into the pre-treatment supernatant, the COD removal rate was found to be 53% , and when COD was 153mg/L, the removal rate was 92.3% in the trafiltration separation. In addition, the effect of the addition of PAC on the permeate flux was also investigated. The decrease of permeate flux In the presence of PAC was higher than In the abscence of PAC, but the recovery of permeability by cleaning was better In the case of PAC system.

• Journal of Information Display
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• v.7 no.1
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• pp.1-6
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• 2006

A 10" carbon nanotube field emission display device was fabricated with a novel structure with a hopping electron spacer (HES) by screen printing technique. HES plays a role of preventing the broadening of electron beams emitted from carbon nanotubes without electrical discharge during operation. The structure of the novel tetrode is composed of carbon nanotube emitters on a cathode electrode, a gate electrode, an extracting electrode coated on the top side of a HES, and an anode. HES contains funnel-shaped holes of which the inner surfaces are coated with MgO. Electrons extracted through the gate are collected inside the funnel-shaped holes. They hop along the hole surface to the top extracting electrode. In this study the effects of the addition of HES on emission characteristics of field emission display were investigated. An active ozone treatment for the complete removal of residues of organic binders in the emitter devices was applied to the field emission display panel as a post-treatment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.93-96
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis of used slurry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.189-192
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• 2001

Recently, STI process is getting attention as a necessary technology for making high density of semiconductor by devices isolation method. However, it does have various problems caused by CMP nprocess, such as torn oxide defects, nitride residues on oxide, damages of si active region, contaminations due to post-CMP cleaning, difficulty of accurate end point detection in CMP process, etc. In this work, the various defects induced by CMP process was introduced and the above mentioned problems of CMP process was examined in detail. Finally, the guideline of future CMP process was presented to reduce the effects of these defects.