• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.430-433
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• 2001

The 0.96MgTiO$_3$-0.04SrTiO$_3$+xCe(x=0∼1.6 wt%) ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were 1300$^{\circ}C$, 2hr., respectively. From the X-ray diffraction patterns, it was found that the perovskite SrTiO$_3$ and ilmenite MgTiO$_3$ structures were coexisted in the 0.96MgTiO$_3$-0.04SrTiO$_3$+xCe(x=0∼1.6 wt%) ceramics. The dielectric constant($\varepsilon$$\sub$r/) was increased with addition of Ce. The temperature coefficient of resonant frequency($\tau$$\sub$f/) was gradually varied from positive value to the negative value with increasing the Ce. The temperature coefficient of resonant frequency of the 0.96MgTiO$_3$-0.04SrTiO$_3$+0.2Ce ceramics was near zero, where the dielectric constant, quality factor, and $\tau$$\sub$f/ were 20.68, 50, 272 and -0.5pm/$^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.391-395
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• 2000

In this study, the temperature coefficient of resonant frequency(TC $F_{r}$), dielectric and piezoelectric properties of Pb[(S $b_{1}$2/N $b_{1}$2/)$_{0.0035}$-(M $n_{1}$3/N $b_{2}$3/)$_{0.0065}$-(Z $r_{x}$ $Ti_{1-x}$ )$_{0.90}$] $O_3$ceramics is investigated with Zr/Ti ratio. The dielectric constant and electromechanical coupling factor( $k_{p}$) showed the highest values of 1257, 0.562 respectively when the Zr/Ti ratio is 49.5/50.5. The mechanical quality factor( $Q_{m}$) is the lowest value of 713 when the Zr/Ti ratio is 49.5/50.5, and increased with the decrease of the Zr/Ti ratio. The temperature coefficient of resonant frequency(TC $F_{r}$) change abruptly at the morphotropic phase boundary(MPB), which is between the rhombohedral phase with highly negative TC $F_{r}$ of -106ppm/$^{\circ}C$ and the tetragonal phase with highly positive TC $F_{r}$ of +64pp $m^{\circ}C$ as Zr/Ti ratio changes from 50/50 to 49.5/50.5.50.5..5.50.5.5.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.12
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• pp.1011-1016
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• 2000

The (1-x)MgTi $O_3$-xSrTi $O_3$(x=0.02~0.08) ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were 125$0^{\circ}C$~1375$^{\circ}C$ and 2hours. The structure and microwave dielectric properties were investigated with sintering temperature and composition ratio. From the X-ray diffraction patterns, the cubic SrTi $O_3$and hexagonal MgTi $O_3$structures were coexisted in the (1-x)MgTi $O_3$-xSrTi $O_3$(x=0.02~0.08) ceramics. The dielectric constant($\varepsilon$$_{r}$) was increased and the temperature coefficient of resonant frequency($\tau$$_{f}$)was decreased with addition of SrTi $O_3$. The temperature coefficient of resonant frequency($\tau$$_{f}$) was gradually varied from negative value to positive value with increasing SrTi $O_3$. In the case of 0.96MgTi $O_3$-0.04SrTi $O_3$ceramics sintered at 130$0^{\circ}C$, the dielectric constant, quality factor and temperature coefficient of resonant frequency were 20.5, 5918(at 7.33GHz) and +10ppm/$^{\circ}C$, respectively.y.y.y.

• Journal of the Korean Ceramic Society
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• v.22 no.3
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• pp.46-52
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• 1985

(Ba0.8. Sr0.2) $TiO_3$ semiconducting ceramic with and without Ti-excess composition were prepared by various sintering temperature. The effects of Ti compositions on the samples were discussed in terms of color micro-structure resistivity at room temperature and the positive temperature coefficient resistivity(PTCR). The 1.02mol Ti-excess composition provides better PTCR properties and has uniform micrositructures with 5-7${\mu}{\textrm}{m}$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.3
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• pp.223-232
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• 1995

Abstract Urea($(NH_2)_2CO$) and THAMP (Tris(hydroxymethyl) aminomethane phosphate) are new organic nonlinear optical materials (NLO) for the device application such as the frequency conversion of laser radiation. The single crystals of urea and THAMP have been grown by the falling temperature method and the temperature difference method. The crystal growth parameters were presented associated with the molphology of the grown crystals. Based on the solubility measurements, methanol was a suitable solvent for the growth of urea. The solubilities of urea have a positive temperature coefficient and the heat of solution of urea was estimated to be -2.58 kcal/mol. The grown crystals of urea have the preferential growth habit in the z-axis. Additives such as $NH_4_H_2PO_4$, KCL, $H_3PO_4$, $CaCl_2{\cdot}2H_2O$, $C_2H_5OH$ were used for the favourable growth in the x - and y-axis and the preventive growth in the z-axis. The moleratio of THAM and H3P04 for the solution of THAMP was 1 : 1. The solubilities of THAMP have a positive temperature coefficient. The heat of solution was estimated to be - 1.70 kcal/ mol.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.4
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• pp.770-776
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• 2009

The composites were fabricated by adding 0, 15, 30, 45[vol.%] $ZrB_2$ powders as a second phase to SiC matrix. The physical, mechanical and electrical properties of electroconductive SiC ceramic composites by spark plasma sintering(SPS) were investigated. Reactions between ${\beta}$-SiC and $ZrB_2$ were not observed in the XRD and the phase analysis of the electroconductive SiC ceramic composites. The relative density of mono ${\beta}$-SiC, ${\beta}$-SiC+15[vol.%]$ZrB_2$, ${\beta}$-SiC+30[vol.%]$ZrB_2$ and ${\beta}$-SiC+45[vol.%]$ZrB_2$ composites are respectively 99.24[%], 87.53[%], 96.41[%] and 98.11[%] Phase analysis of the electroconductive SiC ceramic composites by XRD revealed mostly of ${\beta}$-SiC, $ZrB_2$ and weakly of $ZrO_2$ phase. The flexural strength showed the lowest of 114.44[MPa] for ${\beta}$-SiC+15[vol.%]$ZrB_2$ powders and showed the highest of 210.75[MPa] for composite no added with $ZrB_2$ powders at room temperature. The trend of the mechanical properties of the electroconductive SiC ceramic composites is accorded with the trend of the relative density. The electrical resistivity of the electroconductive SiC ceramic composites decreased with increased $ZrB_2$ contents. The electrical resistivity of mono ${\beta}$-SiC, ${\beta}$-SiC+15[vol.%]$ZrB_2$, ${\beta}$-SiC+30[vol.%]$ZrB_2$ and ${\beta}$-SiC+45[vol.%]$ZrB_2$ composites are respectively $4.57{\times}10^{-1},\;2.13{\times}10^{-1},\;2.68{\times}10^{-2}\;and\;1.99{\times}10^{-2}[{\Omega}{\cdot}cm]$ at room temperature. The electrical resistivity of mono ${\beta}$-SiC and ${\beta}$-SiC+15[vol.%]$ZrB_2$ are negative temperature coefficient resistance(NTCR) in temperature ranges from $25[^{\circ}C]\;to\; 100[^{\circ}C]$. The electrical resistivity of ${\beta}$-SiC+30[vol.%]$ZrB_2$ and ${\beta}$-SiC+45[vol.%]ZrB_2$ are positive temperature coefficient resistance(PTCR) in temperature ranges from $25[^{\circ}C]\;to\;100[^{\circ}C]$. It is convinced that ${\beta}$-SiC+30[vol.%]$ZrB_2$ composites by SPS for heater or ignitors can be applied.

• 전기의세계
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• v.30 no.7
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• pp.441-447
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• 1981

As a preceeding work for the study on dielectric characterstics of a kind of low density polyethylene introduced morphological change by mechanical method, glass transition temperature which is regarded as a macroscopic aspect for relaxation of molecular chain segments has been observed by means of temperature dependent dilatometric measurement. The origina specimen clearly shows two knees which correspond to two peaks (.gamma. and .betha. peak) in the intenal friction measurement, suggesting the existence of separated glass transition temperatures at 150.deg.k and 260.deg.k respectively. On the specimen irradiated to 100 Mrad both glass transition temperatures tend to shift towards high temperature sides because of crosslinking by irradiation. furthemore an evidence can be seen that radiation effect, even in amorphous phase, is also slelctive depending on slight morphological differences. The specimen extended to four times in length shows a peculiar nature such as negative linear thermal expansion coefficient increasing with temperature between 220.deg.k and ambient temperature and that this fact is interpreted by considering that c axis of the lattice aligns along the extended direction by drawing, further c axis inherently possesses the characteristics of negative linear thermal expansion coefficient. For the observations that the relatively small positive linear expansion on the specimen extended to ca. two times as well as the part below 220.deg.k of the specimen extended to four times, it is considered for the reason of the facts that the incompletely oriented region indicated as the middle part of Peterlin's model tends to restore partially to orginal arrangement-a kind of phase transition-as increasing with temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05b
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• pp.66-70
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• 2003

This dissertation is about the development of $BaTiO_{3}$-type PTC(Positive Temperature Coefficient) thermistor by composition method. PTC samples were fabricated after setting the experimental composition equation as $(Ba_{0.95-x}Sr_{0.05}Ca_x)TiO_3\;-\;0.01TiO_2\;-\;0.01SiO_2\;-\;aMnCO_3\;-\;0.2Nb_{2}O_{5}$ and their testing results were analyzed. a PTC thermistor, having the characteristics of relatively low resistance at room temperature and c and a good temperature coefficient, has been developed.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1487-1489
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• 1994

$(Zr_{0.65}Sn_{0.35})Ti_{1.04}O_4$ system which has a dielectric constant, low dielectric loss and temperature coefficient was investigated. Temperature coefficient varied from positive to negative with increasing of NiO. For the NiO content 1.0wt%. i.e $(Zr_{0.65}Sn_{0.35})Ti_{1.04}O_4$, the ceramic showed very good dielectric properties such as ${\epsilon}$=37.8, $Q{\times}f_o=49.000$ and ${\tau}_r= 4{\pm}1ppm/^{\circ}C$.

• Transactions on Electrical and Electronic Materials
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• v.14 no.2
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• pp.78-81
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• 2013

$0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3+0.2wt%\;Ag_2O$ (hereafter, No excess NKN) ceramics and $0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3+0.2wt%\;Ag_2O$ with excess $(Na_{0.5}K_{0.5})NbO_3$ (hereafter, Excess NKN) were fabricated by the conventional solid state sintering method, and their phase transition properties and dielectric properties were investigated. The crystalline structure of No excess NKN ceramics and Excess NKN ceramics were shown characteristics of polymorphic phase transition (hereafter, PPT), especially shift from the orthorhombic to tetragonal phase by increasing sintering temperature range from $1,100^{\circ}C$ to $1,200^{\circ}C$. Also, the temperature coefficient of capacitance (hereafter, TCC) of No excess NKN ceramics and Excess NKN ceramics from $-40^{\circ}C$ to $100^{\circ}C$ was measured to evaluate temperature stability for applications in cold regions. The TCC of No excess NKN and Excess NKN ceramics showed positive TCC characteristics at a temperature range from $-40^{\circ}C$ to $100^{\circ}C$. Especially, Excess NKN showed a smaller TCC gradient than those of Excess NKN ceramics in range from $-40^{\circ}C$ to $100^{\circ}C$. Therefore, NKN piezoelectric ceramics combined with temperature compensated capacitor having negative temperature characteristics is desired for usage in cold regions.