• 한국세라믹학회지
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• 제40권10호
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• pp.921-924
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• 2003

A current-voltage relation for Positive Temperature Coefficient of Resistance (PTCR) ceramic was derived and compared with the experimental data. The new current-voltage relation was developed based on Heywangs double Schottky barrier model and a bias distribution across the grain boundary. The voltage limitation V < 4${\Phi}$$\sub$b/ suggested by Heywang is no longer necessary in the new expression for the voltage dependence of the resistance. The pulsed voltages were applied to the PTCR ceramic specimen in order to avoid possible temperature variation during the measurement.

• Carbon letters
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• 제1권1호
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• pp.1-5
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• 2000

The effect of surface free energy on the positive temperature coefficient (PTC) of carbon black/thermoplastic resin composites was investigated. The thermoplastic resins such as EVA, LDPE, LLDPE and HDPE were used with the addition of 30 wt.% of the carbon black. The surface free energy of the composites was studied in the context of two-liquid contact angle measurements, i.e., deionized water and diiodomethane. It was observed that the resistivity on PTC composites Was greatly increased near the crystalline melting temperature, due to the thermal expansion of polymeric matrix. From the experimental results, it was proposed that the decrease of surface free energy induced by interactions between carbon black surfaces and polymer chains is an important factor to the fabrication of a PTC composite made of carbon black and polymeric matrix.

• 폴리머
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• 제27권4호
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• pp.275-284
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• 2003

접착성이 없는 고밀도 폴리에틸렌 (HDPE)과 나노입자 카본블랙 복합체를 대상으로 전극과의 계면 접착 향상과 고분자 가교 특성에 따른 양온도 계수 (PTC) 특성을 연구하였다. 은페이스트를 전극으로 사용하였을 때에는, 전극과 HDPE의 접착 계면 저항으로 인하여 카본함량이 45 wt% 이상에서 1 $\Omega$ 이었으나, 덴드라이트 (dendrite)된 구리 전극의 경우 HDPE와 전극간의 넓은 면적 접촉에 의한 계면 저항이 0.2 $\Omega$ 이하였다. HDPE와 은페이스트의 계면 저항의 증가로 인하여 구리 박막을 사용하였을 때보다 전체적으로 저항이 높게 나타났다. HDPE와 나노입자 카본블랙 복합체는 온도가 증가하여 HDPE의 비캣연화온도까지는 저항이 일정하게 유지하다가, HDPE의 연화점에서 증가하기 시작하여 용융점에서 극대 값을 나타내는 전형적인 PTC특성을 보여주었다. 일반적으로 HDPE의 용융점을 넘어서면 음온도 계수 (NTC) 현상이 나타나는데, 가교결합을 시킨 HDPE의 경우는, 용융점 이상에서 NTC 현상이 나타나지 않고 저항이 일정하게 유지되거나 증가하는 경향이 나타났다. 구리 (copper) 전극과 고분자와의 계면 접촉 면적을 증가시키기 위하여 크롬 (chromium)을 덴드라이트시킨 전극을 사용하여 계면 접촉 저항을 감소시켰다.

• 대한전자공학회논문지
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• 제27권4호
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• pp.563-570
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• 1990

A silicon pressure sensor made of a full bridge of diffused resistors was designed and fabricated using semiconductor integrated circuit process. Thin diaphragms with 30\ulcorner thickness were obtained using anisotropic wet chemical etching technique. Our device showed strong temperature dependence. Compensation networks are used to compensate for the temperature dependence of the pressure sensor. The bridge supply voltage having positive temperature coefficient by compensation networks was utilized against the negative temperature coefficient of bridge output voltage. The sensitivity fluctuation of pressure sensor before temperature compensation was -1700 ppm/\ulcorner, while it reduced to -710ppm\ulcorner with temperature compensation. Our result shows that the we could develop accurate and reliable pressure sensor over a wide temperature range(-20\ulcorner~50\ulcorner).

• 폴리머
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• 제29권1호
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• pp.32-35
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• 2005

탄소나노튜브를 오존처리한 후 이를 사용하여 탄소나노튜브/고밀도 폴리에틸렌 전도성 복합재료를 제조하였고, 오존처리된 탄산나노튜브가 positive temperature coefficient(PTC) 세기에 미치는 영향을 조사하였다. 원소분석(EA)과 FT-IR 분석 결과, 오존처리된 탄소나노튜브의 표면에는 O-H, C=O 그리고 C-O와 같은 산소함유 관능기가 증가하는 것을 확인할 수 있었다. 또한, 전도성 복합재료의 온도에 따른 저항성은 디지털 멀티메타를 이용하여 측정하였다. 복합재료의 저항성은 고밀도 폴리에틸렌의 결정 용융 온도에서 증가하였으며, 이는 복합재료의 매트릭스로 사용된 고밀도 폴리에틸렌의 열팽창성에 의한 전도성 네트워크의 파괴때문인 것으로 판단된다. 그리고 탄소나노튜브에 오존처리 시간이 증가할수록 탄소나노튜브/고밀도 폴리에틸렌 복합재료의 PTC 세기는 증가했고, 이는 오존처리에 의한 탄소나노튜브 표면에 산소함유 관능기는 PTC 소자의 최대 비저항 값을 증가시키기 때문인 것으로 판단된다.

• Carbon letters
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• 제2권3_4호
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• pp.159-164
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• 2001

In this study, the effects of carbon black (CB) content and anodic oxidation treatment with $AgNO_3$ on positive temperature coefficient (PTC) behavior of CB/HDPE nanocomposites were investigated. Also, the addition of elastomer as a toughing agent was studied. The 20~50 wt% of CB, 0~5 wtt% of elastomer, and 1 wt% of $AgNO_3$-filled HDPE nanocomposites were prepared using the internal mixer in 60 rpm at $160{\circ}C$ and the compression-molded at $180{\circ}C$ for 10 min. As a result, the room temperature resistivity and PTC intensity of the composites were dependent, to a large extent, on the content of CB, addition of elastomer, and surface chemical properties that were controlled in the relative arrangements of the carbon black aggregates in a polymeric matrix. Moreover, the composites with relatively low room temperature resistivity and suitable PTC intensity could be achieved by treatment of $AgNO_3$. Consequently, it was noted that PTC effect was due to the deagglomeration or the breakage of the conductive networks caused by thermal expansion or crystalline melting of the polymeric matrix.

• 한국재료학회지
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• 제16권5호
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• pp.312-317
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• 2006

Binary skutterudite $CoSb_3$ compounds were prepared by the encapsulated induction melting (EIM) process, and their thermoelectric, microstructural and mechanical properties were examined. Single-phase ${\delta}-CoSb_3$ was successfully produced by the EIM and subsequent heat treatment at 773 K-873 K for 24 hours in vacuum. Seebeck coefficient increased with increasing heat treatment temperature up to 673 K, showing the positive signs in the range of measuring temperature. However, the samples heat-treated at 773 K-873 K showed negative Seebeck coefficient from room temperature to 400 K, while it showed positive signs above 400 K. Electrical resistivity decreased with increasing temperature, showing typical semiconducting conductivity. Thermal conductivity decreased drastically with increasing heat-treatment temperature. This is closely related with the phase transition to ${\delta}-CoSb_3$.

• 전자공학회논문지A
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• 제33A권4호
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• pp.136-141
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• 1996

In this paper, a new CMOS on-chip current reference circit for memory, operational amplifiers, comparators, and data converters is proposed. The reference current is almost independent of temeprature and power-supply variations. In the proposed circuit, the current component with a positive temeprature coefficient cancels that with a negative temperature coefficient each other. While conventional curretn and voltage reference circuits require BiCMOS or bipolar process, the presented circuit can be integrated on a single chip with other digiral and analog circits using a standard CMOS process and an extra mask is not needed. The prototype is fabricated employing th esamsung 1.0um p-well double-poly double-metal CMOS process and the chip area is 300um${\times}$135 um. The proposed reference current circuit shows the temperature coefficient of 380 ppm/.deg. C with the temperature changes form 30$^{\circ}C$ to 80$^{\circ}C$, and the output variation of $\pm$ 1.4% with the supply voltage changes from 4.5 V to 5.5 V.

• 한국전기전자재료학회논문지
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• 제14권9호
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• pp.726-730
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• 2001

Temperature stabilities of dielectric constraints and resonant frequencies of the substrates are very important in piezoelectric ceramics oscillators and filters. In this study, it was investigated temperature stability of the length-extensional vibration mode of Pb(Zr$\_$y/Ti$\_$1-y/)O$_3$+x[wt%]Cr$_2$O$_3$ ceramics. The mode can be utilized in fabricating ultra-small 455 kHz IF devices. Addition of Cr$_2$O$_3$ in morphotrophic phase PZT decreased the variations of dielectric constant, electro-mechanical coupling factor k$\_$31/ and resonant frequency by thermal shock. As additive weight of Cr$_2$O$_3$increased, the temperature coefficient of resonant frequency changed from positive number to negative one. And the composition tith temperature coefficient of resonant frequency was shifted to the one with increased Cr$_2$O$_3$ additive weigh by thermal aging.

• 한국화재소방학회논문지
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• 제16권4호
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• pp.15-19
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• 2002

BaTiO$_3$계 PTC 서미스터의 조성개발을 위해 (Ba$_{0.95-x}$S $r_{0.05}$C $a_{x}$)$TiO_3$-$0.01TiO_2$-$0.01SiO_2$-$\alpha$MnCO_3$-$\beta$Nb_2$o_{5}$와 같은 실험조성식을 설정한 후 최적 조건하에서 적층형 PTC시편을 제작하여 실험하였다. 실험 결과, 시편제조시의 최적 소결온도와 냉각속도는 각각 $1350^{\circ}C$-2 hour및 $100^{\circ}C$/h였다. 또한 상온저항을 낮추는 효과가 있는 Dopant로서의 Ca와 Mn 그리고 피크(peak)저항값을 높일 수 있는 Nb를 Ca:5 mol%, Mn:0.08 mol%, Nb:0.18 mol%로 함으로써 비교적 낮은 상온저항과 높은 피크(peak)저항 및 양호한 온도계수 특성이 나타났으며, 화재감지센서로서의 활용 가능성을 확인하였다.다.다.