• 제목/요약/키워드: Porous surface

검색결과 1,500건 처리시간 0.03초

TEOS-$H_2O$계로부터 다공성 실리카 막의 제조 및 수소-질소 혼합기체의 분리 (Preparation of Microporous Silica Membrane from TEOS-$H_2O$ System and Separation Of $H_2$-$N_2$ Gas Mixture)

  • 강태범;이현경;이용택
    • 멤브레인
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    • 제10권2호
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    • pp.55-65
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    • 2000
  • 다공성 실리카 막을 졸겔법에 의해서 Si(${OC}_2H_5)_4-H_2O$ 로부터 제조하고, 막의 특성을 TG-DTA, XRD, IR, BET, SEN, TEM을 사용하여 조사하였다. 다공성 실리카 막 제조를 위한 Si(${OC}_2H_5)_4$ : $H_2O4$ : $H_2O$ : $C_2H_5{OH}$의 최적 몰비는 1 : 4.5 : 4 이었다. 100$^{\circ}C$~1100$^{\circ}C$~에서 열처리된 막의 비표면적은 3.8 $m^2$/g~902.3$m^2$/g 이었으며, 기공크기는 20$\AA$~50$\AA$이었다. 300$^{\circ}C$~~700$^{\circ}C$~범위에서 열처리된 막의 입자크기는 15nm~30nm이며, 열처리 온도가 증가하면 입자의 크기도 증가하였다. 이렇게 제조한 다공성 실리카 막으로 $H_2$/$N_2$ 혼합기체를 분리하는데 응용하였으며, 다공성 실리카 막에 의한 $H_2$/$N_2$혼합기체분리는 Knudsen flow와 surface flow에 의해서 일어나며 주로 surface flow에 의존하였다. 다공성 실리카 막의 $H_2$/$N_2$ 혼합기체에 대한 real separation factor($\alpha$)는 155.15 cmHg($\Delta$P)와 $25^{\circ}C$에서 5.17이었으며, real separation factor($\alpha$), head separation factor ($\beta$), tail separation factor$\bar{B}$)는 압력이 증가하면 증가하였다.

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투과성 이중 원통구조물 배열에 의한 파랑제어 (Wave Control by an Array of Porous Dual Cylindrical Structures)

  • 조일형
    • 한국해양공학회지
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    • 제18권5호
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    • pp.7-14
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    • 2004
  • The interaction of incident manochromatic waves with an array of N surface-piercing porous dual cylindrical structures is investigated in the frame of three-dimensional linear potential theory. The dual cylindrical structure is camposed of concentric two cylinders. The exterior cylinder is porous and the interior cylinder is impermeable. The fluid domain is divided into N+1 regions i.e. a single exterior region and N interior regions. The diffraction potentials in each region representing the scattering of incident waves by an array of porous cylindrical structures are expressed by the Fourier Bessel series. The unknown coefficients in each region are determined by applying the porous boundary condition and continuity of mass flux at the matching boundary. It is found that an array of porous cylindrical structures reduces both the wave forces and the wave run-up, and shows the excellent performance of wave blocking. The results show that various types of breakwater exchanging seawater are prospective by controlling the porosity and the configuration of cylindrical structures.

공극률에 따른 다공성 타이타늄 임플란트의 기계적 특성 (Mechanical properties of the porous Ti implants according to porosity)

  • 김영훈
    • 대한치과기공학회지
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    • 제37권2호
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    • pp.57-62
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    • 2015
  • Purpose: This study was performed to investigate mechanical properties of the porous Ti implants according to porosity. Porous Ti implant will be had properties similar to human bone such as microstructure and mechanical properties. Methods: Porous Ti implant samples were fabricated by sintering of spherical Ti powders(below $25{\mu}m$, $25{\sim}32{\mu}m$, $32{\sim}38{\mu}m$, and $38{\sim}45{\mu}m$) in a high vacuum furnace. Specimen's diameter and height were 4mm and 40 mm. Surface and sectional images of porous Ti implants were evaluated by scanning electron microscope(SEM). Porosity and average pore size were evaluated by mercury porosimeter. Young's modulus and tensile strength were evaluated by universal testing machine(UTM). Results: Porosity of Implant was increased according to larger particle size of the powder. Boundary portions of particles are sintered fully and others portions were formed pore. Young's modulus was decreased by formed porous structure. Tensile strength was decreased according to larger the particle size of the powder, but higher than human bone. Conclusion: If prepared by adjust the porosity of the porous Ti implant will be able to resolve the stress shielding phenomenon.

The Fabrication of Porous Nickel Oxide Thin Film using Anodization Process for an Electrochromic Device

  • 이원창;최은창;홍병유
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.407.1-407.1
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    • 2016
  • Electrochromism is defined as a phenomenon which involves persistently repeated change of optical properties between bleached state and colored state by simultaneous injection of electrons and ions, sufficient to induce an electrochemical redox process. Due to this feature, considerable progress has been made in the synthesis of electrochromic (EC) materials, improvements of EC properties in EC devices such as light shutter, smart window and variable reflectance mirrors etc. Among the variable EC materials, solid-state inorganics in particular, metal oxide semiconducting materials such as nickel oxide (NiO) have been investigated extensively. The NiO that is an anodic EC material is of special interest because of high color contrast ratio, large dynamic range and low material cost. The high performance EC devices should present the use of standard industrial production techniques to produce films with high coloration efficiency, rapid switching speed and robust reversibility. Generally, the color contrast and the optical switching speed increase drastically if high surface area is used. The structure of porous thin film provides a specific surface area and can facilitate a very short response time of the reaction between the surface and ions. The large variety of methods has been used to prepare the porous NiO thin films such as sol-gel process, chemical bath deposition and sputtering. Few studies have been reported on NiO thin films made by using sol-gel method. However, compared with dry process, wet processes that have the questions of the durability and the vestige of bleached state color limit the thin films practical use, especially when prepared by sol-gel method. In this study, we synthesis the porous NiO thin films on the fluorine doped tin oxide (FTO) glass by using sputtering and anodizing method. Also we compared electrical and optical properties of NiO thin films prepared by sol gel. The porous structure is promised to be helpful to the properties enhancement of the EC devices.

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초박형 태양전지의 Porous Si Layer Transfer 기술 적용을 위한 전기화학적 실리콘 에칭 (Electrochemical Etching of Silicon in Porous Silicon Layer Transfer Process for Thin Film Solar Cell Fabrication)

  • 이주영;한원근;이재호
    • 마이크로전자및패키징학회지
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    • 제16권4호
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    • pp.55-60
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    • 2009
  • 불산과 에탄올 혼합용액에서 전기화학적 에칭을 통하여 다공성 실리콘 층을 제작하였다. 에칭 시 인가된 초음파의 주파수, 전류밀도, 에칭시간의 변화에 따른 다공성 실리콘 층의 변화를 확인하였다. 초음파를 가해주지 않은 시편은 표면에 특별한 변화가 일어나지 않았으나, 초음파 진동자의 주파수가 40 kHz와 130 kHz인 초음파 발생조에서 실험한 시편을 관찰한 결과, 가해준 초음파의 주파수가 높을수록 다공성 실리콘 층의 기공의 크기가 더 커지고 실리콘 표면에서의 에칭이 더 균일하게 일어났다. 후면접촉 에칭조와 current shield를 이용한 결과 다공성 실리콘 층 전면에 걸쳐 균일하게 기공이 발생하였다. 다공성 실리콘 층의 기공의 크기는 전류밀도가 증가함에 따라 함께 증가하였고, 에칭 시간에는 영향을 받지 않았다.

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팔라듐 합금 수소 분리막의 전처리에 관한 연구 (A Study on the Surface Pre-treatment of Palladium Alloy Hydrogen Membrane)

  • 박동건;김형주;김효진;김동원
    • 한국표면공학회지
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    • 제45권6호
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    • pp.248-256
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    • 2012
  • A Pd-based hydrogen membranes for hydrogen purification and separation need high hydrogen perm-selectivity. The surface roughness of the support is important to coat the pinholes free and thin-film membrane over it. Also, The pinholes drastically decreased the hydrogen perm-selectivity of the Pd-based composite membrane. In order to remove the pinholes, we introduced various surface pre-treatment such as alumina powder packing, nickel electro-plating and micro-polishing pre-treatment. Especially, the micro-polishing pretreatment was very effective in roughness leveling off the surface of the porous nickel support, and it almost completely plugged the pores. Fine Ni particles filled surface pinholes with could form open structure at the interface of Pd alloy coating and Ni support by their diffusion to the membrane and resintering. In this study, a $4{\mu}m$ surface pore-free Pd-Cu-Ni ternary alloy membrane on a porous nickel substrate was successfully prepared by micro-polishing, high temperature sputtering and Cu-reflow process. And $H_2$ permeation and $N_2$ leak tests showed that the Pd-Cu-Ni ternary alloy hydrogen membrane achieved both high permeability of $13.2ml{\cdot}cm^{-2}{\cdot}min^{-1}{\cdot}atm^{-1}$ permation flux and infinite selectivity.

AISI4115 기계구조용 합금강의 질화 가스분위기에 따른 화합물층의 형성 및 내마모특성 (Formation of compound layers and Wear behavior of AISI4115 steels by gaseous nitriding process)

  • 김태환;손석원;조균택;이기안;이원범
    • 한국표면공학회지
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    • 제54권5호
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    • pp.267-277
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    • 2021
  • Nitriding layers developed during gaseous nitriding of AISI4115 steels for the application of steel bushing part were investigated. The compound layer thickness of about 10㎛, 0.3mm of case depth under the same conditions, and conventional nitriding, nitrocarburizing, and controlled nitriding were performed in three methods. In the controlled nitriding, KN was controlled by measuring the hydrogen partial pressure. The nitrided samples were analyzed by micro Vickers hardness test, optical microscopy and scanning electron microscopy. The phases of compound layer were identified by X-ray diffraction and electron backscatter diffraction. The controlled nitriding specimen indicated the highest surface hardness of about 860 HV0.1. The compound layer of the conventional nitriding and nitrocarburizing specimen was formed with about 46% porous layer and 𝜺 + 𝜸' phase, and about 13% porous layer and about 80% 𝜸' phase were formed on the controlled nitriding specimen. As a result of the Ball-on-disk wear test, the worn mass loss of ball performed on the surface of the controlled nitriding specimen was the largest. The controlled nitriding specimen had the highest surface hardness due to the lowest porous percentage of compound layer, which improved the wear resistance.

산화공정에 따른 Porous Poly-Silicon Emitter의 방출특성 조사 (Electron Emission Characteristic of Porous Poly-Silicon Emitter as a Oxidation process)

  • 제병길;배성찬;최시영
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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    • pp.722-726
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    • 2003
  • 본 논문에서는 Porous poly-silicon cold cathode에 의해 전자를 방출하는 Ballistic electron surface-emitting display(BSD)의 전계방출 특성을 실험했다. BSD는 nanocrystalline을 둘러싼 산화막을 multi-tunneling한 전자에 의해 발광이 되는 mechanism이기 때문에 산화막의 두께를 변수로 두어 특성을 실험했다. 900℃에서 1시간에서 3시간까지 30분 간격으로산화 반응을 진행하였으며, leakage current와 emission current의 비로 효율을 나타내었을 때 1시간 30분 동안 산화 반응을 한 시료가 가장 좋은 특성을 나타내었다.

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나노 구조를 갖는 다공성 실리콘의 광 발광성을 이용한 광학이미지 칩의 제작 (Fabrication of Optically Images Using Nanostructured Photoluminescenct Porous Silicon)

  • 정대혁
    • 통합자연과학논문집
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    • 제2권3호
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    • pp.202-206
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    • 2009
  • Optical images based on the porous silicon exhibiting photoluminescence have been prepared from an electrochemical etching of n-type silicon wafer (boron-doped,<100> orientation, resistivity $1{\sim}10{\Omega}-cm$) by using a beam projector. The images remained in the substrate displayed an optical images correlating to the optical pattern and could be useful for optical data storage. This provides the ability to fabricate complex optical encoding in the surface of silicon.

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