• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.2
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• pp.51-55
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• 2015

The present research is focused on the effect of porous graphite what is influenced on the 4H-SiC crystal growth by PVT method. We expect that it produces more C-rich and a change of temperature gradient for polytype stability of 4H-SiC crystal as adding the porous graphite in the growth cell. The SiC seeds and high purity SiC source materials were placed on opposite side in a sealed graphite crucible which was surrounded by graphite insulator. The growth temperature was around $2100{\sim}2300^{\circ}C$ and the growth pressure was 10~30 Torr of an argon pressure with 5~15 % nitrogen. 2 inch $4^{\circ}$ off-axis 4H-SiC with C-face (000-1) was used as a seed material. The porous graphite plate was inserted on SiC powder source to produce a more C-rich for polytype stability of 4H-SiC crystal and uniform radial temperature gradient. While in case of the conventional crucible, various polytypes such as 6H-, 15R-SiC were observed on SiC wafers, only 4H-SiC polytype was observed on SiC wafers prepared in porous graphite inserted crucible. The defect level such as MP and EP density of SiC crystal grown in the conventional crucible was observed to be higher than that of porous graphite inserted crucible. The better crystal quality of SiC grown using porous graphite plate was also confirmed by rocking curve measurement and Raman spectra analysis.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.5
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• pp.2002-2008
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• 2012

In recent years, while the importance of thermal management has been emphasized due to smaller electronic products, various materials have been used as heat sink. In this study, porous ceramic heat sink was developed with SiC, successfully separated from the slurry of SiC occurring in solar energy materials industry and the thermal performance of porous SiC heat sink has been compared with those of aluminum heat sink and pure SiC heat sink through experiment. From the experimental results, it was verified that porous recycled SiC heat sink has better thermal performance than aluminum heat sink since its micropores increase the heat transfer area. In addition, the effect of the micropores on thermal performance has been quantified by increasing convective heat transfer coefficient with numerical analysis.

• Korean Journal of Materials Research
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• v.16 no.3
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• pp.188-192
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• 2006

The microstructures and mechanical properties of continuously porous $SiC-Si_3N_4$composites fabricated by multi-pass extrusion were investigated at different Si levels added. Si-powder with different weight percentages (0%, 5%, 10%, 15%, 20%) was added to the SiC powder to make the raw mixture powders, with $6wt%Y_2O_3-2wt%Al_2O_3$ as sintering additives, carbon ($10-15{\mu}m$) as a pore-forming agent, ethylene vinyl acetate as a binder and stearic acid ($CH_3(CH_2)_{16}COOH$) as a lubricant. In the continuously porous $SiC-Si_3N_4$ composites, $Si_3N_4$ whiskers like the hairs of nostrils were frequently observed on the wall of the pores. In this study, the morphology of the $Si_3N_4$ whiskers was investigated with the silicon addition content. In the composites containing of 10 wt% Si, a large number of $Si_3N_4$ whiskers was found at the continuous pore regions. In the sample to which 15 wt% Si powder was added, maximum values of about 101 MPa bending strength and 57.5% relative density were obtained.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.32 no.11
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• pp.1016-1021
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• 2008

The development of the first wall whose major function is to withstand high neutron and heat fluxes is a critical path to fusion power. The materials database and the fabrication technology are being developed for design, construction and safety operation of the fusion reactor. The first wall was designed to consist of the plasma facing armor, the heat sink layer and the supporting plates. and Porous materials are of significant interest due to their wide applications in catalysis, separation, lightweight structural materials. In this study, the characteristics of the sintering process of SiC ceramic, $SiC_f$/SiC composite and porous $C_f$/SiC composite have been introduced order to study of the fusion blanket materials and heat-exchange pannel.

• Journal of the Korean Ceramic Society
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• v.30 no.6
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• pp.485-491
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• 1993

Porous glass in the ZrO2.SiO2 system containning up to 30mol% zirconia were prepared by the sol-gel method from metal alkoxides and their pore characteristics with reaction parameters were investigated. The gels were made by hydrolyzing and condensation of the mixed metla alkoxides and were converted into the porous glass by heating up to $700^{\circ}C$. As a results, the mean pore radius became larger with increasing contents of HCl, H2O and hydrolysis temperature, and an alcohol with a large molecular weight for making the porous glass. In the case of 20ZrO2.80SiO2 porous glass with heated at $700^{\circ}C$, HCl and H2O content was 0.3mol and 4mol, the specific surface area was 284$m^2$/g, average mean pore radius was about 19.4$\AA$, porosity was 22.55% and pore characteristics depended on heating temperature.

• Journal of the Korean Ceramic Society
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• v.33 no.10
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• pp.1170-1176
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• 1996

Porous silicon was prepared by anodic reaction. The process was controlled by current density and etching time an the thickness change and the room temperature PL was measured. The thickness of porous silicon was increased with etching time and was decreased after critical time. It was the same as increasing current density. It needed only 15 sec to electropolish the surface of porous silicon above current density 70 mA/cm2. We can understand that increasing etching time leads narrow size of Si column by porous silicon formation mechanism. And the sample with narrow Si column revealed PL blue shift. The specimens were heated in the range of 300-1000$^{\circ}C$ in order to see PL changes. The heat treatment was proceeded in H2 atmosphere vacuum system to avoid oxidation. The PL was disappeared above 600$^{\circ}C$. In high temperature some sintered Si columns were observed in SEM photography. There was no difference of -Hx bonds which was suggested as evidence of hydride compounds luminescence between 500$^{\circ}C$ and 600$^{\circ}C$. Thus it is concluded that quantum confinement is major factor of PL of porous silicon.

• Journal of the Korean Ceramic Society
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• v.47 no.4
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• pp.308-311
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• 2010

Porous SiC samples were prepared with three types of wood (poplar, pine, big cone pine) by simply embedding the wood charcoal in a powder mixture of Si and $SiO_2$ at 1600 and $1700^{\circ}C$. The basic engineering properties such as density, porosity, pore size and distribution, and strength were characterized. The samples showed full conversion to mostly $\beta$-SiC with good retention of the cellular structure of the original wood. More rigid SiC struts were developed for $1700^{\circ}C$. They showed similar bulk density ($0.5{\sim}0.6\;g/cm^3$) and porosity (81~84%) irrespective of the type of wood. The poplar sample showed three pore sizes (1, 8, $60\;{\mu}m$) with a main size of $60\;{\mu}m$. The pine sample showed a single pore size ($20\;{\mu}m$). The big cone pine sample showed two pore sizes (10, $80\;{\mu}m$) with a main size of $10\;{\mu}m$. The bend strength was 2.5 MPa for poplar, 5.7 MPa for pine, 2.8 MPa for big cone pine, indicating higher strength with pine.

• Journal of the Korean Ceramic Society
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• v.46 no.5
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• pp.534-539
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• 2009

Reaction Bonded Silicon Carbide(RBSC) has been used for engineering ceramics due to low-temperature fabrication and near-net shape products with excellent structural properties such as thermal shock resistance, corrosion resistance and mechanical strength. Recently, attempts have been made to develop hot gas filter with gradient pore structure by RBSC to overcome weakness of commercial clay-bonded SiC filter such as low fracture toughness and low reliability. In this study a fabrication process of porous RBSC with multi-layer pore structure with gradient pore size was developed. The support layer of the RBSC with multi-layer pore structure was fabricated by conventional Si infiltration process. The intermediate and filter layers consisted of phenolic resin and fine SiC powder were prepared by dip-coating of the support RBSC in slurry of SiC and phenol resin. The temperature of $1550^{\circ}C$ to make Si left in RBSC support layer infiltrate into dip-coated layer to produce SiC by reacting with pyro-carbon from phenol resin.

• Journal of Integrative Natural Science
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• v.3 no.3
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• pp.153-156
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• 2010

Oxidation behaviors of porous silicon were investigated by the measurement of area of $SiO_2$ vibrational peaks in FT-IR spectra during thermal oxidation of porous silicon at corresponding temperatures. Visible photoluminescent porous silicon samples were obtained from an electrochemical etch of n-type silicon of resistivity between 1-10 ${\Omega}/cm$. The etching solution was prepared by adding an equal volume of pure ethanol to an aqueous solution of HF. The porous silicon was illuminated with a 300 W tungsten lamp for the duration of etch. Etching was carried out as a two-electrode galvanostatic procedure at applied current density of 200 $mA/cm^2$ for 5 min. The porosity of samples prepared was about 80%. After formation of porous silicon, the samples were thermally oxidized at $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, and $400^{\circ}C$, respectively. The growth rate of $SiO_2$ layer of porous silicon was investigated by using FT-IR spectroscopy. The effect of oxidation of porous silicon was presented.

• Korean Chemical Engineering Research
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• v.54 no.4
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• pp.459-464
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• 2016

In this study, the electrochemical characteristics of porous silicon/carbon composite anode were investigated to improve the cycle stability and rate performance in lithium ion batteries. In this study, the effect of TEOS and $NH_3$ concentration, mixing speed and temperature on particle size of nano silica was investigated using $St{\ddot{o}}ber$ method. Nano porous Si/C composites were prepared by the fabrication processes including the synthesis of nano $SiO_2$, magnesiothermic reduction of nano $SiO_2$ to obtain nano porous Si by HCl etching, and carbonization of phenolic resin. Also the electrochemical performances of nano porous Si/C composites as the anode were performed by constant current charge/discharge test, cyclic voltammetry and impedance tests in the electrolyte of $LiPF_6$ dissolved inorganic solvents (EC:DMC:EMC=1:1:1vol%). It is found that the coin cell using nano porous Si/C composite has the capacity of 2,006 mAh/g and the capacity retention ratio was 55.4% after 40 cycle.