• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.597-600
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• 1999

By periodically varying the current density and etching time during anodic oxidation of crustalline silicon wafers in 15% HF-ethanol solution, we obtained porous silicon multilayers which have periodically varying refractive index. We fabricated the porous silicon microcavity (PSM) which consist of porous silicon multilayers (I), active layer of porous silicon, and porous silicon multilayers (II) and investigated its physical properties. The AFM (Atomic Force Microscope) measurement from the cross section of multilayers (I and II) shows uniformity of high refractive index and low index layers as well as the active layer. We observed the characteristics of Bragg reflector when the thickness of layers was 1/4 and the thickness of active layer was twice of the effective wavelength, which can be used as a filter for specific wavelength. We found the emission characteristic from the PSM, which FWHM (full width half maximum) was considerably decreased and emission intensity was increased.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.10
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• pp.106-112
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• 1990

The progress of oxidation of a porous silicon layer(PSL) was studied by examining the temperature dependence of the oxidation and the infrared absorption spectra. Thick OPSL(oxidized porous silicon layer). which has the same properties as thermal $SiO_{2}$ of bulk silicon, is formed in a short time by two steps wet oxidation of PSL at $700^{\circ}C$, 1 hr and $1100^{\circ}C$, 1 hr. Etching rate, breakdown strength of the OPSL are strongly dependent on the oxidation temperature, oxidation atmosphere. And its breakdown field was ${1\MV/cm^-2}$ MV/cm The oxide film stress was determined through curvature measurement using a dial gauge. During oxidation at temperature above $1000^{\circ}C$ in dry $O_{2}$, stress on the order of ${10^9}\dyne/{cm^2}{-10^10}\dyne/{cm^2}$ are generated in the OPSL.

• Journal of Sensor Science and Technology
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• v.8 no.1
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• pp.32-37
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• 1999

A capacitance-type humidity sensor with mesa structure in which porous silicon layer is used as humidity-sensing material is developed and its humidity sensing properties are measured. This sensor has a structure where two electrodes are set on the up-side of the wafer against the past typical structure having these electrodes on the up and down-side of the wafer. Therefore, the sensor can be fabricated monolithically to be more compatible with the IC process technology, and is possible to detect more correct output capacitance by removing the effect of the parasitic capacitance from the bottom layer and other junctions. To do this, the sensor was fabricated using process such as localized formation of porous silicon, oxidation of porous silicon layer, and etching of oxidized porous silicon layer. From the completed samples, the dependence of capacitance on the relative humidity of 55 to 90% more was measured at room temperature. As the result, the measured capacitance increased monotonously higher at the low frequency of 120 Hz, where the capacitance was observed to increase over 300%.

• Korean Chemical Engineering Research
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• v.45 no.6
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• pp.591-595
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• 2007

The membrane filter coated with nanostructured porous surface layer was made by heat treatment after depositing nanoparticles onto a conventional micron-fibrous metal filter as a substrate filter. The nanostructured porous layer membrane filter (NSPL-MF), whose the filtration performance was improved compared with the conventional metal membrane filters, was developed by coating the nanoparticle agglomerates of dendrite structure onto the micron-fibrous metal filter. Pressure drop of nanostructured porous layer membrane filter decreased with increasing the heat treatment temperature to make the nanostructured porous layer adhered on the filter surface because the nanoparticle agglomerates shrank, but filtration efficiency did not decrease clearly.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.8
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• pp.560-564
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• 2003

Thick oxide layer was fabricated by anodic reaction and complex oxidation performed by combining low temperature thermal oxidation (50$0^{\circ}C$, 1 hr at $H_2O$/O$_2$) and a RTO (rapid thermal oxidation) process (105$0^{\circ}C$, 1 min). Electrical characteristics of OPSL (oxidized porous silicon layer) were almost the same as those of thermal silicon dioxide prepared at high temperature. The leakage current through the OPSL of 20${\mu}{\textrm}{m}$ thickness was about 100 - 500 ㎀ in the range 0 V to 50 V. The average value of breakdown field was about 3.9 MV/cm. From the XPS analysis, surface and internal oxide films of OPSL prepared by complex process were confirmed completely oxidized and also the role of RTO process was important for the densification of PSL (porous silicon layer) oxidized at low temperature.

• Journal of the Korean institute of surface engineering
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• v.28 no.3
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• pp.182-191
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• 1995

A highly porous silicon layer was fabricated by anodizing single crystalline silicon in a dilute solution of hydrofluoric acid. The color of the porous silicon changed from red and blue to yellow gold during the anodizing process. The current-voltage (I-V) curve of the anodizing process showed a typical Schottky diode rectification form. The cell voltage decreased with the increase of HF concentration in the solution at high current range. However, the voltage was independent on HF concentration in the solution at low current range. The pore size was dependant on anodizing condition (HF concentration, current and anodizing time). The pore size and wall width of porous silicon layer were 4~6 and 1~3 nm, respectively. Surface of the porous silicon was covered with silicon compound ($SiH_x$etc.) according to IR spectrum analysis. The peak wavelength and width of photoluminescence (PL) spectrum of porous silicon were 650~850 nm (1.5~1.9 eV) and 250 nm, respectively. The photoluminescence intensity and peak wavelength, and porosity of porous silicon increased with increasing anodizing current and decreased with increasing HF concentration in the anodizing solution.

• Advances in nano research
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• v.8 no.1
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• pp.69-82
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• 2020

In this study, the free and forced vibration analysis of micro sandwich plate with porous core layer and magneto-electric face sheets based on modified couple stress theory and first order shear deformation theory under simply supported boundary conditions is illustrated. It is noted that the core layer is composed from balsa wood and also piezo magneto-electric facesheets are made of BiTiO₃-CoFe₂O₄. Using Hamilton's principle, the equations of motion for micro sandwich plate are obtained. Also, the Navier's method for simply support boundary condition is used to solve these equations. The effects of applied voltage, magnetic field, length to width ratio, thickness of porous to micro plate thickness ratio, type of porous, coefficient of porous on the frequency ratio are investigated. The numerical results indicate that with increasing of the porous coefficient, the non-dimensional frequency increases. Also, with an increase in the electric potential, the non-dimensional frequency decreases, while and with increasing of the magnetic potential is vice versa.

• Geomechanics and Engineering
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• v.15 no.1
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• pp.645-657
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• 2018

The paper aims to analyze the behaviour of torsional type surface waves propagating through fluid saturated inhomogeneous porous media clamped between two inhomogeneous anisotropic media. We considered three types of inhomogeneities in upper anisotropic layer which varies exponentially, quadratically and hyperbolically with depth. The anisotropic half space inhomogeneity varies linearly with depth and intermediate layer is taken as inhomogeneous fluid saturated porous media with sinusoidal variation. Following Biot, the dispersion equation has been derived in a closed form which contains Whittaker's function and its derivative, for approximate result that have been expanded asymptotically up to second term. Possible particular cases have been established which are in perfect agreement with standard results and observe that when one of the upper layer vanishes and other layer is homogeneous isotropic over a homogeneous half space, the velocity of torsional type surface waves coincides with that of classical Love type wave. Comparative study has been made to identify the effects of various dimensionless parameters viz. inhomogeneity parameters, anisotropy parameters, porosity parameter, and initial stress parameters on the torsional wave propagation by means of graphs using MATLAB. The study has its own relevance in connection with the propagation of seismic waves in the earth where fluid saturated poroelastic layer is present.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.81.2-81.2
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• 2011

The gas diffusion layer (GDL) consists of two main parts, the GDL backing layer, called as a substrate and the micro porous layer (MPL) coated on the GDBL. In this process, carbon particles of MPL penetrates to the GDBL consequently forms MPL penetration part. In this study, the micro porous layer (MPL) penetration thickness is determined as a design parameter of the GDL which affect pore size distribution profile through the GDL inducing different mass transfer characteristics. The pore size distribution and water permeability characteristics of the GDL are investigated and the cell performance is evaluated under fully/low humidification conditions. Transient response and voltage instability are also studied. In addition, to determine the effects of MPL penetration on the degradation, the carbon corrosion stress test is conducted. The GDL that have deep MPL penetration thickness shows better performance in high current density region because of enhanced water management, however, loss of penetrated MPL parts is shown after aging and it induces worse water management characteristics.

• Journal of the Korean Ceramic Society
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• v.46 no.5
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• pp.534-539
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• 2009

Reaction Bonded Silicon Carbide(RBSC) has been used for engineering ceramics due to low-temperature fabrication and near-net shape products with excellent structural properties such as thermal shock resistance, corrosion resistance and mechanical strength. Recently, attempts have been made to develop hot gas filter with gradient pore structure by RBSC to overcome weakness of commercial clay-bonded SiC filter such as low fracture toughness and low reliability. In this study a fabrication process of porous RBSC with multi-layer pore structure with gradient pore size was developed. The support layer of the RBSC with multi-layer pore structure was fabricated by conventional Si infiltration process. The intermediate and filter layers consisted of phenolic resin and fine SiC powder were prepared by dip-coating of the support RBSC in slurry of SiC and phenol resin. The temperature of $1550^{\circ}C$ to make Si left in RBSC support layer infiltrate into dip-coated layer to produce SiC by reacting with pyro-carbon from phenol resin.