• Journal of the Korean Ceramic Society
• /
• v.41 no.7
• /
• pp.541-547
• /
• 2004

Addition of large particles restrains densification by small particles in mixed particle systems. In the present study, large SiC whiskers or particles were introduced into small particles for restraining densification and the mixtures were sintered using yttrium aluminum garnet (Y$_3$A1$\sub$5/O$\sub$12/, YAG) as a sintering additive. By controlling the content of large SiC whiskers or particles and the applied pressure during sintering, porous SiC ceramics, with a porosity ranging from 0.3% to 39%, were fabricated. Porosity increased with increasing the content of restraining materials. SiC whiskers were more effective than large SiC partcles for restraining densification. Permeability of the porous SiC ceramics increased with increasing the porosity. Flexural strength decreased with increasing porosity. A noticeable increase in strain to failure was observed in the porous ceramics with a porosity ranging from 18% to 39%.

• The Korean Journal of Ceramics
• /
• v.1 no.3
• /
• pp.147-151
• /
• 1995

Porous composite of $Al_2O_3$ and AIN based mullite and SiC can be prepared by alumium reaction synthesis and atmosphere controllied sintering in order to improve the durability of a gas filter body. The porous $Al_2O_3$-AIN-mullite, which has a strength of 168 kg/$\textrm{cm}^2$ and porosity of 51.59%, could be obtained by stmospheric firing at $1600^{\circ}C$ and the porous $Al_2O_3$-AIN-SiC with a porosity of 33% and strength of 977 kg/$\textrm{cm}^2$, could also be prepared. The average pore size has been changed from 0.2$\mu\textrm{m}$ in a reduction atmosphere and to 2$\mu\textrm{m}$ in an air atmosphere, respectively.

• Journal of the Korean Ceramic Society
• /
• v.55 no.3
• /
• pp.285-289
• /
• 2018

We synthesized silicon carbide (${\beta}-SiC$) nanowires with nano-scale diameter (30 - 400 nm) and micro-scale length ($50-200{\mu}m$) on a porous body using low-grade silica and carbon black powder by carbothermal reduction at $1300-1600^{\circ}C$. The SiC nanowires were formed by vapor-liquid-solid deposition with self-evaporated Fe catalysts in low-grade silica. We investigated the characteristics of the SiC nanowires, which were grown on a porous body with Ar flowing in a vacuum furnace. Their structural, optical, and electrical properties were analyzed with X-ray diffraction (XRD), transmission electron microscopy (TEM), and selective area electron diffraction (SAED). We obtained high-quality SiC single crystalline nanowire without stacking faults that may have uses in industrial applications.

• Korean Journal of Materials Research
• /
• v.16 no.3
• /
• pp.188-192
• /
• 2006

The microstructures and mechanical properties of continuously porous $SiC-Si_3N_4$composites fabricated by multi-pass extrusion were investigated at different Si levels added. Si-powder with different weight percentages (0%, 5%, 10%, 15%, 20%) was added to the SiC powder to make the raw mixture powders, with $6wt%Y_2O_3-2wt%Al_2O_3$ as sintering additives, carbon ($10-15{\mu}m$) as a pore-forming agent, ethylene vinyl acetate as a binder and stearic acid ($CH_3(CH_2)_{16}COOH$) as a lubricant. In the continuously porous $SiC-Si_3N_4$ composites, $Si_3N_4$ whiskers like the hairs of nostrils were frequently observed on the wall of the pores. In this study, the morphology of the $Si_3N_4$ whiskers was investigated with the silicon addition content. In the composites containing of 10 wt% Si, a large number of $Si_3N_4$ whiskers was found at the continuous pore regions. In the sample to which 15 wt% Si powder was added, maximum values of about 101 MPa bending strength and 57.5% relative density were obtained.

• Journal of the Korean Ceramic Society
• /
• v.49 no.6
• /
• pp.625-630
• /
• 2012

Highly porous silicon carbide (SiC) ceramics were fabricated from polysiloxane, SiC and carbon black fillers, AlN-$Y_2O_3$ additives, and poly (ether-co-octene) (PEOc) and expandable microsphere templates. Powder mixtures with a fixed PEOc content (30 wt%) and varying SiC filler contents from 0-21 wt% were compression-molded. During the pyrolysis process, the polysiloxane was converted to SiOC, the PEOc generated a considerable degree of interconnected porosity, and the expandable microspheres generated fine cells. The polysiloxane-derived SiOC and carbon black reacted and synthesized nano-sized SiC with a carbothermal reduction during a heat-treatment. Subsequent sintering of the compacts in a nitrogen atmosphere produced highly porous SiC ceramics with porosities ranging from 78 % to 82 % and a flexura lstrength of up to ~7 MPa.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2004.05a
• /
• pp.44-44
• /
• 2004

• Journal of Integrative Natural Science
• /
• v.3 no.3
• /
• pp.153-156
• /
• 2010

Oxidation behaviors of porous silicon were investigated by the measurement of area of $SiO_2$ vibrational peaks in FT-IR spectra during thermal oxidation of porous silicon at corresponding temperatures. Visible photoluminescent porous silicon samples were obtained from an electrochemical etch of n-type silicon of resistivity between 1-10 ${\Omega}/cm$. The etching solution was prepared by adding an equal volume of pure ethanol to an aqueous solution of HF. The porous silicon was illuminated with a 300 W tungsten lamp for the duration of etch. Etching was carried out as a two-electrode galvanostatic procedure at applied current density of 200 $mA/cm^2$ for 5 min. The porosity of samples prepared was about 80%. After formation of porous silicon, the samples were thermally oxidized at $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, and $400^{\circ}C$, respectively. The growth rate of $SiO_2$ layer of porous silicon was investigated by using FT-IR spectroscopy. The effect of oxidation of porous silicon was presented.

• Journal of the Korean Ceramic Society
• /
• v.27 no.3
• /
• pp.412-422
• /
• 1990

Porous SiC ceramics were proposed to be promising materials for high-temperature thermoelectric energy conversion. Throughthe thermoelectric property measurements and microstructure observations on the porous alpha SiC and the mixture of $\alpha$-and $\beta$-SiC, it was experimentally clarified that elimination of stacking faults and twin boundaries by grain growth is effective to increase the seebeck coefficient and increasing content of $\alpha$-SiC gives rise to lower electrical conductivity. Furthermore, the effects of additives on the thermoelectric properties of 6H-SiC ceramics were also studied. The electrical conductivity and the seebeck coefficient were measured at 35$0^{\circ}C$ to 105$0^{\circ}C$ in argon atmospehre. The thermoelectric conversion efficiency of $\alpha$-SiC ceramics was lower than that of $\beta$-SiC ceramics. The phase homogeneity would be needed to improve the seebeck coefficient and electrical conductivity decreased with increasing the content of $\alpha$-phase. In the case of B addition, XRD analysis showed that the phase transformation did not occur during sintering. On the other hand, AlN addiiton enhanced the reverse phase transformation from 6H-SiC to 4H-SiC, and this phenomenon had a great effect upon the electrical conductivity.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.20 no.3
• /
• pp.29-34
• /
• 2019

Silicon carbide is considered to be a potentially useful material for high-temperature electronic devices, as its large energy band gap and the p-type and/or n-type conduction can be controlled by impurity doping. Particularly, electric conductivity of porous n-type SiC semiconductors fabricated from ${\beta}-SiC$ powder at $2000^{\circ}C$ in $N_2$ atmosphere was comparable to or even larger than the reported values of SiC single crystals in the temperature region of $800^{\circ}C$ to $1000^{\circ}C$, while thermal conductivity was kept as low as 1/10 to 1/30 of that for a dense SiC ceramics. In this work, for the purpose of decreasing sintering temperature, it was attempted to fabricate porous reaction-sintered bodies at low temperatures ($1400-1600^{\circ}C$) by thermal decomposition of polycarbosilane (PCS) impregnated in n-type ${\beta}-SiC$ powder. The repetition of the impregnation and sintering process ($N_2$ atmosphere, $1600^{\circ}C$, 3h) resulted in only a slight increase in the relative density but in a great improvement in the Seebeck coefficient and electrical conductivity. However the power factor which reflects the thermoelectric conversion efficiency of the present work is 1 to 2 orders of magnitude lower than that of the porous SiC semiconductors fabricated by conventional sintering at high temperature, it can be stated that thermoelectric properties of SiC semiconductors fabricated by the present reaction-sintering process could be further improved by precise control of microstructure and carrier density.

• Journal of the Korean Ceramic Society
• /
• v.47 no.4
• /
• pp.308-311
• /
• 2010

Porous SiC samples were prepared with three types of wood (poplar, pine, big cone pine) by simply embedding the wood charcoal in a powder mixture of Si and $SiO_2$ at 1600 and $1700^{\circ}C$. The basic engineering properties such as density, porosity, pore size and distribution, and strength were characterized. The samples showed full conversion to mostly $\beta$-SiC with good retention of the cellular structure of the original wood. More rigid SiC struts were developed for $1700^{\circ}C$. They showed similar bulk density ($0.5{\sim}0.6\;g/cm^3$) and porosity (81~84%) irrespective of the type of wood. The poplar sample showed three pore sizes (1, 8, $60\;{\mu}m$) with a main size of $60\;{\mu}m$. The pine sample showed a single pore size ($20\;{\mu}m$). The big cone pine sample showed two pore sizes (10, $80\;{\mu}m$) with a main size of $10\;{\mu}m$. The bend strength was 2.5 MPa for poplar, 5.7 MPa for pine, 2.8 MPa for big cone pine, indicating higher strength with pine.