• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.6
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• pp.215-219
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• 2016

Vanadium-doped SiC crystals have been grown by using a porous graphite inner crucible filled with vanadium carbide (VC) and by using a porous graphite plate and SiC + VC powders, respectively. Semi-insulating SiC crystals were grown onto the 6H-SiC seed crystals by PVT (Physical Vapor Transport) method. The grown crystals were indicated to be 6H-SiC polytype by XRD. As result of SIMS analysis, vanadium-rich precipitates were observed when the vanadium concentration was relatively higher than the maximum solubility of vanadium ($3-5{\times}10^{17}cm^{-3}$) in vanadium-doped SiC crystals, which resulted in degradation of crystal quality.

• Membrane Journal
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• v.10 no.2
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• pp.55-65
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• 2000

The porous silica membrane was prepared from Si(${OC}_2H_5)_4-H_2O$ system by sol-gel method. To investigate the characteristics of gels and porous silica membrane, we examined gels and porous silica membrane using TG-DTA, X-ray diffractometer, IR spectrophotometer, BET, SEM and TEM. The optimum mole ratio of Si(OC$_2$H$_{5}$)$_4$ : $H_2O$ $C_2$H$_{5}$OH for porous silica membrane was 1 : 4.5 : 4. The porous silica membrane was obtained by heat treatment of the gel above 700 $^{\circ}C$. The specific surface area of sintered gel was 3.8 $m^2$/g to 902.3 $m^2$/g at 100 $^{\circ}C$ to 1100 $^{\circ}C$ The pore size of sintered gel was in the range 20 $\AA$~ 50$\AA$. The particle size of sintered gel was 15 nm to 30 nm at 30$0^{\circ}C$ to 700$^{\circ}C$. The performance of the porous silica membrane was investigated for the separation of $H_2$/$N_2$ gas mixture. Gas separation through porous silica membrane depends upon Knudsen flow and surface flow. The veal separation factor($\alpha$) of $H_2$/$N_2$ was 5.17 at 155.15 cmHg and $25^{\circ}C$. The real separation factor($\alpha$), head separation factor($\beta$), and tail separation factor( $\bar{B}$) increased as the pressure of permeation cell Increased.sed.

• Journal of the Korean Ceramic Society
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• v.26 no.6
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• pp.771-782
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• 1989

Synthesis of $\beta$-Sialon powder was attempted with carbothermal reduction of porous glass. The porous glass was prepared by heat and hydrothermal treatments of 9.32 Li2O.46.5B2O3.37.2SiO2.6.98Al2O3 glass. Carbon pyrolyzed from propane gas was deposited on the porous glass, thereafter activated carbon was added as reducing agents. The synthesized $\beta$-Sialon powder was pressureless sintered at 175$0^{\circ}C$ for 1hr in N2 atmosphere. The characterization of the $\beta$-Sialon powder was performed with XRD, BET, SEM and particle size analysis. The sinterability and mechanical properties of the sintered bodies were investigated in terms of bulk density, M.O.R., fracture toughness, morphology of microstructure and etc. The reduction effect of deposited carbon was better than that of activated carbon mechanically added. The formation of SiC was precominant over that of Si2ON2 and $\beta$-Sialon owing to low partial pressure of N2 inside the pore, wehreas on the surface of porous glass the formation of Si2ON2 and $\beta$-Sialon were predominant. Thereafter, SiC reduced unreacted glass to be $\beta$-Sialon. Single phase of $\beta$-Sialon(Z=1.92) was obtained from PGA porous glass having the largest pore radius by the simultaneous reduction and nitridation method at 145$0^{\circ}C$ for 5hrs. The bulk density, M.O.R., and KIC of the sitered body are 3.17g/cc, 434.4MPa and 4.1MPa.m1/2, respectively.

• Transactions on Electrical and Electronic Materials
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• v.12 no.3
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• pp.102-105
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• 2011

This work describes the characteristics of zinc oxide (ZnO) thin films formed on a polycrystalline (poly) 3C-SiC buffer layer using a sol-gel process. The deposited ZnO films were characterized using X-ray diffraction, scanning electron microscopy, and photoluminescence (PL) spectra. ZnO thin films grown on the poly 3C-SiC buffer layer had a nanoparticle structure and porous film. The effects of post-annealing on ZnO film were also studied. The PL spectra at room temperature confirmed the crystal quality and optical properties of ZnO thin films formed on the 3C-SiC buffer layer were improved due to close lattice mismatch in the ZnO/3C-SiC interface.

• Journal of the Korean Ceramic Society
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• v.30 no.6
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• pp.485-491
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• 1993

Porous glass in the ZrO2.SiO2 system containning up to 30mol% zirconia were prepared by the sol-gel method from metal alkoxides and their pore characteristics with reaction parameters were investigated. The gels were made by hydrolyzing and condensation of the mixed metla alkoxides and were converted into the porous glass by heating up to $700^{\circ}C$. As a results, the mean pore radius became larger with increasing contents of HCl, H2O and hydrolysis temperature, and an alcohol with a large molecular weight for making the porous glass. In the case of 20ZrO2.80SiO2 porous glass with heated at $700^{\circ}C$, HCl and H2O content was 0.3mol and 4mol, the specific surface area was 284$m^2$/g, average mean pore radius was about 19.4$\AA$, porosity was 22.55% and pore characteristics depended on heating temperature.

• Composites Research
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• v.13 no.5
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• pp.31-36
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• 2000

The effect of several important processing variables was investigated on formation of porous mullite with acicular microstructure. Experimental results demonstrated that microstructure and porosity of porous mullite are depending on concentration of $AlF_3$, holding time at $900^{\circ}C$ and starting material. Acicular mullite was developed by increasing amount of $AlF_3$ and holding time at $900^{\circ}C$. Mullite began to be formed at $1200^{\circ}C$ and the resultant microstructure sintered at this temperature is similar to those at higher temperatures. Porosity increases with increase in amounts of $AlF_3$ and holding time at $900^{\circ}C$ . Therefore, it is found that microstructure of reaction-sintered porous mullite can be controlled by governing the amount of $AlF_3$ and holding time at $900^{\circ}C$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.3
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• pp.576-583
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• 2018

Silicon carbide is considered to be a potentially useful material for high-temperature electronic devices, as its band gap is larger than that of silicon and the p-type and/or n-type conduction can be controlled by impurity doping. Particularly, porous n-type SiC ceramics fabricated from ${\beta}-SiC$ powder have been found to show a high thermoelectric conversion efficiency in the temperature region of $800^{\circ}C$ to $1000^{\circ}C$. For the application of SiC thermoelectric semiconductors, their figure of merit is an essential parameter, and high temperature (above $800^{\circ}C$) electrodes constitute an essential element. Generally, ceramics are not wetted by most conventional braze metals,. but alloying them with reactive additives can change their interfacial chemistries and promote both wetting and bonding. If a liquid is to wet a solid surface, the energy of the liquid-solid interface must be less than that of the solid, in which case there will be a driving force for the liquid to spread over the solid surface and to enter the capillary gaps. Consequently, using Ag with a relatively low melting point, the junction of the porous SiC semiconductor-Ag and/or its alloy-SiC and/or alumina substrate was studied. Ag-20Ti-20Cu filler metal showed promise as the high temperature electrode for SiC semiconductors.

• Journal of Korea Foundry Society
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• v.25 no.2
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• pp.80-87
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• 2005

The microstructure and mechanical property of the Ni and Ni-Cr porous metal reinforced AC4C matrix composites fabricated by squeeze casting were investigated. In this study Ni, Ni-Cr porous metals which are estimated to be easy to fabricate by squeeze casting are used as strengtheners for composite materials. As a matrix material, Al-7wt.%Si-0.3wt.%Mg(AC4C) has been used. In case of Ni/AC4C and Ni-Cr/AC4C composite, $750^{\circ}C$ melt temperature and minimum 25MPa squeezing pressure are needed to produce sound composite materials. The observation of interfacial reaction zone at various heat treatment condition shows that atsolutionizing temperature of above $520^{\circ}C$, the interfacial reaction zone increases proportionally with heat treatment time and the reaction products formed by interfacial reactions are mainly composed by $Al_{3}Ni$ and $Al_{3}Ni_{2}$ phases.

• Journal of the Korean Ceramic Society
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• v.37 no.11
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• pp.1119-1125
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• 2000

용융 Si 침윤 방법에 의한 새로운 다공질 RBSC 제조공정이 개발되었으며, 용융 Si 침윤공정 방법으로 제조된 다공질 RBSC의 최대 3-점 파괴 강도는 18 MPa, 최대 기공율은 46% 범위이었다. 용융 Si 침윤방법으로 제조된 다공질 RBSC의 기계적 특성 및 기공율은 성형체내 SiC 입자 표면의 카본 source의 양 및 침윤시 사용된 Si의 양에 직접적으로 영향을 받는 것으로 나타났다. 침윤시 상대 Si 양은 40%를 사용하였으며, SiC 입자 표면에 graphite와 phenol resin을 함께 코팅한 성형체를 사용하여 제조된 다공질 RBSC에서 최대 파괴강도 값을 얻었다. 상대 Si의 양의 증가는 다공질 RBSC의 파괴강도를 감소시켰으며, SiC 입자 표면의 카본 source 코팅층은 graphite와 phenol resin을 같이 사용하였을 때 다공질 RBSC의 파괴강도는 증가되었으나, RBSC 내 기공율은 감소되었다.

• Korean Chemical Engineering Research
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• v.54 no.4
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• pp.459-464
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• 2016

In this study, the electrochemical characteristics of porous silicon/carbon composite anode were investigated to improve the cycle stability and rate performance in lithium ion batteries. In this study, the effect of TEOS and $NH_3$ concentration, mixing speed and temperature on particle size of nano silica was investigated using $St{\ddot{o}}ber$ method. Nano porous Si/C composites were prepared by the fabrication processes including the synthesis of nano $SiO_2$, magnesiothermic reduction of nano $SiO_2$ to obtain nano porous Si by HCl etching, and carbonization of phenolic resin. Also the electrochemical performances of nano porous Si/C composites as the anode were performed by constant current charge/discharge test, cyclic voltammetry and impedance tests in the electrolyte of $LiPF_6$ dissolved inorganic solvents (EC:DMC:EMC=1:1:1vol%). It is found that the coin cell using nano porous Si/C composite has the capacity of 2,006 mAh/g and the capacity retention ratio was 55.4% after 40 cycle.