• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.561-561
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• 2012

Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as fast electron mobility, high thermal conductivity and optical transparency, and also found many applications such as field-effect transistors (FET), energy storage and conversion, optoelectronic device, electromechanical resonators and chemical sensors. Several techniques have been developed to form the graphene. Especially chemical vapor deposition (CVD) is a promising process for the large area graphene. For the electrically isolated devices, the graphene should be transfer to insulated substrate from Cu or Ni. However, transferred graphene has serious drawback due to remaining polymeric residue during transfer process which induces the poor device characteristics by impurity scattering and it interrupts the surface functionalization for the sensor application. In this study, we demonstrate the characteristics of solution-gated FET depending on the removal of polymeric residues. The solution-gated FET is operated by the modulation of the channel conductance by applying a gate potential from a reference electrode via the electrolyte, and it can be used as a chemical sensor. The removal process was achieved by several solvents during the transfer of CVD graphene from a copper foil to a substrate and additional annealing process with H2/Ar environments was carried out. We compare the properties of graphene by Raman spectroscopy, atomic force microscopy(AFM), and X-ray Photoelectron Spectroscopy (XPS) measurements. Effects of residual polymeric materials on the device performance of graphene FET will be discussed in detail.

• Journal of Adhesion and Interface
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• v.22 no.3
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• pp.91-97
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• 2021

By introducing an organic interlayer on the Parylene C dielectric surface, the electrical device performances and the operating stabilities of organic field-effect transistors (OFETs) were improved. To achieve this goal, hexamethyldisilazane (HMDS) and octadecyltrichlorosilane (ODTS), as the organic interlayer materials, were used to control the surface energy of the Parylene C dielectrics. For the bare case used with the pristine Parylene C dielectrics, the field-effect mobility (μ_FET) and threshold voltage (V_th) of dinaphtho[2,3-b:2',3'-f ]thieno[3,2-b]- thiophene (DNTT) FET devices were measured at 0.12 cm²V^-1s^-1 and - 5.23 V, respectively. On the other hand, the OFET devices with HMDS- and ODTS-modified cases showed the improved μ_FET values of 0.32 and 0.34 cm²V^-1s^-1, respectively. More important point is that the μ_FET and V_th of the DNTT FET device with the ODTS-modified Parylene C dielectric presented the smallest changes during a repeated measurement of 1000 times, implying that it has the most stable operating stability. The results could be meaned that the organic interlayer, especially ODTS, effectively covers the Parylene C dielectric surface with alkyl chains and reduces the charge trapping at the interface region between active layer and dielectric, thereby improving the electrical operating stability.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.637-640
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• 2008

The properties of oriented poly(3-hexylthiophene-2,5-diyl) in field effect transistors (FETs) have been investigated through mechanical stretching process as the original. Silicon-based FETs shown high mobility of $0.02\;cm^2/V$ s after thermal treatment and $0.0092\;cm^2/V$ s at r.t. PET-based FETs were expected to show a similar performance in mobility to that of silicon-based FETs.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1319-1321
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• 2009

Copper phthalocyanine (CuPc) Field-effect transistors (FETs) was successfully fabricated on plastic substrates. Orientation of CuPc crystallites on substrate could be obtained via rubbing process. It was revealed that CuPc crystallites were perpendicularly aligned on PES substrates with the rubbing direction. The performance of FETs was affected by orientation of CuPc on rubbed substrates.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.642-642
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• 2013

Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as high electron mobility, high thermal conductivity and optical transparency. Especially, chemical vapor deposition (CVD) grown graphene has been used as a promising material for high quality and large-scale graphene film. Unfortunately, although CVD-grown graphene has strong advantages, application of the CVD-grown graphene is limited due to ineffective transfer process that delivers the graphene onto a desired substrate by using polymer support layer such as PMMA(polymethyl methacrylate). The transferred CVD-grown graphene has serious drawback due to remaining polymeric residues generated during transfer process, which induces the poor physical and electrical characteristics by a p-doping effect and impurity scattering. To solve such issue incurred during polymer transfer process of CVD-grown graphene, various approaches including thermal annealing, chemical cleaning, mechanical cleaning have been tried but were not successful in getting rid of polymeric residues. On the other hand, lithographical patterning of graphene is an essential step in any form of microelectronic processing and most of conventional lithographic techniques employ photoresist for the definition of graphene patterns on substrates. But, application of photoresist is undesirable because of the presence of residual polymers that contaminate the graphene surface consistent with the effects generated during transfer process. Therefore, in order to fully utilize the excellent properties of CVD-grown graphene, new approach of transfer and patterning techniques which can avoid polymeric residue problem needs to be developed. In this work, we carried out transfer and patterning process simultaneously with no polymeric residue by using a metal etch mask. The patterned thin gold layer was deposited on CVD-grown graphene instead of photoresists in order to make much cleaner and smoother surface and then transferred onto a desired substrate with PMMA, which does not directly contact with graphene surface. We compare the surface properties and patterning morphology of graphene by scanning electron microscopy (SEM), atomic force microscopy(AFM) and Raman spectroscopy. Comparison with the effect of residual polymer and metal on performance of graphene FET will be discussed.