• Proceedings of the Korean Society of Dyers and Finishers Conference
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• 2004.11a
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• pp.79-81
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• 2004

• Proceedings of the Korean Fiber Society Conference
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• 2007.11a
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• pp.467-468
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• 2007

• Journal of the Korean Physical Society
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• v.73 no.12
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• pp.1808-1813
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• 2018

I develop a transfer matrix algorithm for computing the geometric quantities of a square lattice polymer with nearest-neighbor interactions. The radius of gyration, the end-to-end distance, and the monomer-to-end distance were computed as functions of the temperature. The computation time scales as ${\lesssim}1.8^N$ with a chain length N, in contrast to the explicit enumeration where the scaling is ${\sim}2.7^N$. Various techniques for reducing memory requirements are implemented.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.281.2-281.2
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• 2016

Two-dimensional van der Waals (2D vdWs) materials have been extensively studied for future electronics and materials sciences due to their unique properties. Among them, black phosphorous (BP) has shown infinite potential for various device applications because of its high mobility and direct narrow band gap (~0.3 eV). In this work, we demonstrate a few-nm thick BP-based nonvolatile memory devices with an well-known poly(vinylidenefluoride-trifluoroethylene) [P(VDF-TrFE)] ferroelectric polymer gate insulator. Our BP ferroelectric memory devices show the highest linear mobility value of $1159cm^2/Vs$ with a $10^3$ on/off current ratio in our knowledge. Moreover, we successfully fabricate the ferroelectric complementary metal-oxide-semiconductor (CMOS) memory inverter circuits, combined with an n-type $MoS_2$ nanosheet transistor. Our memory CMOS inverter circuits show clear memory properties with a high output voltage memory efficiency of 95%. We thus conclude that the results of our ferroelectric memory devices exhibit promising perspectives for the future of 2D nanoelectronics and material science. More and advanced details will be discussed in the meeting.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.904-906
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• 2009

Organic field-effect transistor (OFET) memory is an emerging device for its potential to realize light-weight, low cost flexible charge storage media. Here we report on a solution-processed poly[9,9-dioctylfluorenyl-2,7-diyl]-co-(bithiophene)] (F8T2) nano floating-gate memory (NFGM) with top-gate/bottom-contact device configuration. A reversible shift in the threshold voltage ($V_{Th}$) and the reliable memory characteristics were achieved by incorporation of thin Au nanoparticles (NPs) as charge storage sites for negative electrons at the interface between polystyrene and cross-linked poly(4-vinylphenol).

• Bulletin of the Korean Chemical Society
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• v.32 no.spc8
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• pp.2988-2996
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• 2011

Shape memory polyurethane (SMPU), grafted with a fluorescent dye (Rhodamine, Mehylene violet, or Fluorescein) through an allophanate linking, was tested for the fluorescence and the shape recovery effect. The main chain of SMPU was composed of 4,4'-methylenebis(phenylisocyanate) (MDI), poly(tetramethyleneglycol) (PTMG), and 1,4-butanediol (BD), and a fluorescent dye was connected through a second MDI linked to the carbamate moiety of the main chain. Three series of SMPU, differing according to their dye content, were prepared to compare their shape recovery and fluorescence properties. In tensile mechanical property, maximum stress increased up to 350% compared to the linear SMPU, and strain remained above 2000%. Shape recovery went to as high as 97%, and remained almost same after repetitive shape recovery test cycles. Finally, the fluorescence emission of SMPU was demonstrated in the luminescence spectrum and fluorescent light emission pictures. In addition, the response of SMPU to external stimuli such as metal ions was investigated.

• Journal of the Earthquake Engineering Society of Korea
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• v.28 no.1
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• pp.41-46
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• 2024

The current study investigates the seismic performance of shear-dominant RC columns retrofitted with iron-based shape memory alloy (Fe SMA). Three RC columns with insufficient transverse reinforcement were designed and fabricated for lateral cyclic loading tests. Before testing, two specimens were externally confined with carbon fiber-reinforced polymer (CFRP) sheets and self-prestressed Fe SMA strips. The test results showed that both CFRP and Fe SMA performed well in preventing severe shear failure exhibited by the unretrofitted control specimen. Furthermore, the two retrofitted specimens showed ductile flexural responses up to the drift ratios of ±8%. In terms of damage control, however, the Fe SMA confinement was superior to CFRP confinement in that the spalling of concrete was much less and that the rupture of confinement did not occur.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.244-244
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• 2012

Polymer memory devices have attracted considerable attention because of their advantages such as low cost potential, good scalability, flexibility, simplicity in structure, and large capacity for data storage. Metal/poly (4,4'-aminotriphenylene hexafluoroisopropylidenediphthalimide) (6F-TPA PI)/metal system has been found to show an electrical bi-stable behavior. Here, we show a novel set-up of 6F-TPA PI/Al sample in which holes are injected by photoelectron emission process instead of direct charge carrier injection via metal electrode. In this process, an irreversible electrical phase transition of 6F-TPA PI is found, leading to a write-once-read-many (WORM) behavior. The photoelectron spectroscopy results measured before and after the switching process revealed that the irreversible electrical phase transition of 6F-TPA PI is attributed to the chemical modification of the carbonyl group in phthalimide moiety.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.329-330
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• 2006

The research and development of an actuator are accelerating in the robotics industry. The electricity polymer and SMA actuator are designed simply and are produced a lot of forces per unit volume. Their motions are similar to human's motion, But the repeatability of the electricity polymer actuator is lower. The reaction velocity of the SMA actuator is slow and the travel is short. In this paper, the dynamic characteristic of the segmented SMA is studied. The SMA wire is divided by using the Thermo-electric module(TEM) to control each of segments independently. The MOSFET circuit is used to supply constant currents fer the Thermo-electric module(TEM). The hysteresis and displacement of the SMA wire according to load are measured.

• Proceedings of the Optical Society of Korea Conference
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• 2005.02a
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• pp.62-63
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• 2005