• 제목/요약/키워드: Polyimide layer

검색결과 244건 처리시간 0.027초

이온빔 및 이미다졸-실란 화합물에 의한 폴리이미드 필름과 구리의 접착 특성 (Adhesion Properties between Polyimide Film and Copper by Ion Beam Treatment and Imidazole-Silane Compound)

  • 강형대;김화진;이재흥;서동학;홍영택
    • 접착 및 계면
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    • 제8권1호
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    • pp.15-27
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    • 2007
  • 폴리이미드 필름과 구리의 접착력을 향상시키기 위하여 이온빔과 실란-이미다졸 커플링제를 사용하여 폴리이미드 표면개질을 실시하였다. 실란-이미다졸 커플링제는 구리와의 배위결합을 형성하는 이미다졸 그룹과 실록산 폴리머를 형성하는 메톡시 실란 그룹을 함유한다. 폴리이미드 필름표면은 아르곤/산소 이온빔으로 일차로 처리하여 친수성을 높인 폴리이미드 필름에 커플링제 수용액에 침지하여 폴리이미드 필름 표면에 커플링제를 그라프트시켜 표면개질을 실시하였다. XPS 스펙트럼 분석결과 아르곤/산소 플라즈마 처리는 폴리이미드 표면에 하이드록시 및 카르보닐 그룹과 같은 산소 기능성기를 형성함을 알 수 있었고 폴리이미드 필름 표면에 실란-이미다졸과의 커플링반응에 의하여 표면이 개질되었음을 확인하였다. 이온빔을 사용하여 그라프트된 폴리이미드 필름과 구리와의 접착력은 처리되지 않은 폴리이미드 필름과의 접착력 보다 높은 접착력을 나타내었다. 또한 커플링제로 그라프트된 폴리이미드 필름의 접착력 보다 아르곤/산소의 양자화 이온을 이용하여 개질한 그라프트된 폴리이미드 필름의 시편이 더 높은 접착력을 나타내었다. 구리-폴리이미드 필름의 계면으로부터 박리된 층은 분석결과 완전히 서로 다른 화학적 조성을 나타내었는데 이것으로부터 박리가 접합면의 커플링제 내에서 일어나는 것보다는 폴리이미드와 커플링제의 사이에서 일어남을 확인하였다.

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유연소자용 기판과의 접착 특성에 따른 구리 배선의 압축 피로 거동 및 신뢰성 (Reliability of Cu Interconnect under Compressive Fatigue Deformation Varying Interfacial Adhesion Treatment)

  • 김민주;현준혁;허정아;이소연
    • 마이크로전자및패키징학회지
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    • 제30권4호
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    • pp.105-111
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    • 2023
  • 차세대 전자기기는 기계적인 굽힘이나 말림(rolling) 변형이 반복적으로 가능한 형태로 발전하고 있다. 이에 따라 전자기기 내부 소자들 간의 연결을 위한 금속 배선의 기계적인 신뢰성 확보가 필수적이며, 특히, 실제 사용 환경을 모사한 압축 환경에서의 굽힘 피로 변형에 대한 신뢰성 평가가 중요하다. 본 연구에서는 구리(Cu)와 폴리이미드(Polyimide, PI) 기판 간의 접착력을 향상시키고, 굽힘 피로 변형 환경에서 구리 배선의 신뢰성을 높이기 위한 방법을 탐구했다. 접착력 향상을 위해 폴리이미드 기판에 산소 플라즈마 처리와 크롬(Cr) 접착층 도입이라는 두 가지 방법을 적용하고, 이들이 압축 상황에서의 피로 거동에 미치는 영향을 비교 분석했다. 연구 결과, 접착력 향상 방법에 따라 압축 피로 거동에서 차이가 발생하는 것을 확인했다. 특히, 크롬 접착층을 도입한 경우 1.5% 변형률에서는 크랙 생성이 주된 변형 메커니즘이며, 피로 특성이 취약한 결과를 얻었으나, 2.0%의 높은 변형률에서는 플라즈마 처리법에 비해 박리가 발생하지 않아 가장 개선된 피로 특성을 나타냈다. 본 연구의 결과는 유연 전자기기의 사용 환경에 적합한 피로 저항 개선법을 제시하고, 크랙 발생 정도를 포함한 전자기기의 신뢰성 향상에 중요한 정보를 제공할 수 있을 것으로 기대한다.

TCO 응용을 위한 패턴된 기판위에 증착된 AZO 박막의 특성 연구 (Conformal coating of Al-doped ZnO thin film on micro-column patterned substrate for TCO)

  • 최미경;안철현;공보현;조형균
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.28-28
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    • 2009
  • Fabrications of antireflection structures on solar cell were investigated to trap the light and to improve quantum efficiency. Introductions of patterned substrate or textured layer for Si solar cell were performed to prevent reflectance and to increase the path length of incoming light. However, it is difficult to deposit conformally flat electrode on perpendicular plane. ZnO is II-VI compound semiconductor and well-known wide band-gap material. It has similar electrical and optical properties as ITO, but it is nontoxic and stable. In this study, Al-doped ZnO thin films are deposited as transparent electrode by atomic layer deposition method to coat on Si substrate with micro-scale structures. The deposited AZO layer is flatted on horizontal plane as well as perpendicular one with conformal 200 nm thickness. The carrier concentration, mobility and resistivity of deposited AZO thin film on glass substrate were measured $1.4\times10^{20}cm^{-3}$, $93.3cm^2/Vs$, $4.732\times10^{-4}{\Omega}cm$ with high transmittance over 80%. The AZO films were coated with polyimide and performed selective polyimide stripping on head of column by reactive ion etching to measure resistance along columns surface. Current between the micro-columns flows onto the perpendicular plane of deposited AZO film with low resistance.

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고출력 Nd:YAG UV레이저를 이용한 polyimide층과 Cu-metal층의 가공상태에 대한 실험적 고찰 (Experimental Investigation for Ablation Characteristics of Polyimide Layer and Cu-metal Layer using High Power Nd:YAG UV Laser)

  • 최경진;이용현
    • 반도체디스플레이기술학회지
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    • 제8권4호
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    • pp.31-36
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    • 2009
  • In this paper, the laser cutting characteristics of the flexible PCB using high power Nd:YAG UV laser were investigated. A specific FPCB model was selected for the experiment. Test sheets were made, which had equal materials and layer structure to those of the outline (OL) region and the contact pad (CP) region in the FPCB. The experiment is made up of two stages. In the first stage of the experiment, the laser cutting fluence was found, which is the threshold fluence to cut the test sheets completely. The laser cutting fluence of the OL sheet is $1781.26{\sim}1970.16\;J/cm^2$ and that of the CP sheet is $2109.34{\sim}2134.34\;J/cm^2$. In the second stage, cutting performance and its qualities were analyzed by the experiment. The laser cutting performance remained almost unchanged for all laser and process parameter sets. The average cutting width (top side/bottom side) of the OL sheet was $40.45\;{\mu}m/11.52\;{\mu}m$ and that of the CP sheet was $22.14\;{\mu}m/10.93\;{\mu}m$. However, the laser cutting qualities were different according to the parameters. The adjacent region of the cutting line on the OL sheet was carbonized as the beam speed was low and the overlap coefficient was high. The surface quality around the cutting line of the CP sheet was about the same. Carbonization and debris occurred on the surface of the cutting line. As a result of the experiment, the cutting qualities were better as the overlap coefficient was made low and beam speed high. Therefore, the overlap coefficient 2 or 3 is proper for the FPCB laser cutting.

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비정질 실리콘 희생층을 이용한 니켈산화막 볼로미터 제작 (Fabrication of Nickel Oxide Film Microbolometer Using Amorphous Silicon Sacrificial Layer)

  • 김지현;방진배;이정희;이용수
    • 센서학회지
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    • 제24권6호
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    • pp.379-384
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    • 2015
  • An infrared image sensor is a core device in a thermal imaging system. The fabrication method of a focal plane array (FPA) is a key technology for a high resolution infrared image sensor. Each pixels in the FPA have $Si_3N_4/SiO_2$ membranes including legs to deposit bolometric materials and electrodes on Si readout circuits (ROIC). Instead of polyimide used to form a sacrificial layer, the feasibility of an amorphous silicon (${\alpha}-Si$) was verified experimentally in a $8{\times}8$ micro-bolometer array with a $50{\mu}m$ pitch. The elimination of the polyimide sacrificial layer hardened by a following plasma assisted deposition process is sometimes far from perfect, and thus requires longer plasma ashing times leading to the deformation of the membrane and leg. Since the amorphous Si could be removed in $XeF_2$ gas at room temperature, however, the fabricated micro-bolomertic structure was not damaged seriously. A radio frequency (RF) sputtered nickel oxide film was grown on a $Si_3N_4/SiO_2$ membrane fabricated using a low stress silicon nitride (LSSiN) technology with a LPCVD system. The deformation of the membrane was effectively reduced by a combining the ${\alpha}-Si$ and LSSiN process for a nickel oxide micro-bolometer.

게이트 절연막에 사용된 점착층에 대한 영향 (Effect of Adhesion Layer on Gate Insulator)

  • 이동현;형건우;표상우;김영관
    • 한국전기전자재료학회논문지
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    • 제19권4호
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    • pp.357-361
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    • 2006
  • The electrical performances of organic thin-film transistors (OTFTs) have been improved for the last decade. In this paper, it was demonstrated that the electrical characteristics of the organic thin film transistors (OTFTs) were improved by using polymeric material as adhesion layer on gate insulator. We have investigated OTFTs with polyimide adhesion layer which was fabricated by vapor deposition polymerization (VDP) processing and formed by co-deposition of 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride and 4,4'-oxydianiline. It was found that the OTFTs with adhesion layer showed better electrical characteristics than with bare layer because of good matching between semiconductor and gate insulator. Our devices of performance are field effect mobility of $0.4cm^2/Vs$, threshold voltage of -0.8 V and on-off current ratio of $10^6$. In addition, to improve the electrical characteristics of OTFT, we have reduced the thickness of adhesion layer up to a few nanometrs.

OTFT의 게이트 절연막에 사용된 점착층에 대한 영향 (The Effect of Adhesion layer on Gate Insulator for OTFTs)

  • 이동현;형건우;표상우;김정수;김영관
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.70-71
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    • 2005
  • The electrical performances of organic thin-film transistors (OTFTs) have been improved for the last decade. In this paper, it was demonstrated that the electrical characteristics of the organic thin film transistors (OTFTs) were improved by using polymeric material as adhesion layer on gate insulator. We have investigated OTFTs with polyimide adhesion layer which was fabricated by vapor deposition polymerization (VDP) processing and formed by co-deposition of 6FDA and ODA. It was found that the OTFTs with adhesion layer showed better electrical characteristics than with bare layer because of good matching between semiconductor and gate insulator. Our devices of performance are field effect mobility of $0.4cm^2$/Vs, threshold voltage of -0.8 V and on-of current ratio of $10^6$. In addition, to improve the electrical characteristics of OTFT, we have reduced the thickness of adhesion layer up to a few nanometrs.

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PDMS기판에 이온빔 처리에 따른 수평 액정의 배향 연구

  • 김영환;오병윤;김병용;이원규;임지훈;나현재;서대식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.159-159
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    • 2009
  • We characterize a flexible self-assembled liquid crystal display (LCD) fabricated from a polyimide (PI) alignment layer with polydimethylsiloxane pixel walls. Ion beam (IB) irradiation aligned LC molecules in the PI layer and bonded two flexible plastic substrates in a one-step assembly of the pixel walls. X-ray photoelectron spectroscopic analysis, Fourier transform infrared spectroscopy, and scanning electron microscopy provided chemical and physical evidence for the formation of stable chemical bonds between the PI layer and the PDMS pixel walls in addition to the important maintenance of a uniform 6 um gap between the two substrates without the use of any epoxy resins or other polymers.

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광반응 폴리이미드위에 RF bias sputtering 방식으로 증착된 Cr의 접착력에 관한 연구

  • 김선영;김영호;윤종승
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2001년도 추계 기술심포지움
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    • pp.171-177
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    • 2001
  • The adhesion enhancement from inserting a RF bias-sputtered Cr layer between Cu and polyimide (PI) has been studied. The RF bias power applied in this study was ranged from 0 to 400 W. Without the RF bias, the peel strength, which measures the adhesion strength, was nearly o g/mm. As the RF power was increased, the peel strength rose up to ~130 g/mm at 200 W, which remained constant with further increase of the RF bias power. Cross-sectional transmission electron microscopy(TEM) was used to investigate the interfacial reaction between the Cr film and PI substrate during the bias sputtering. The Cr/PI interface without the application of RF dais showed a clean, sharp interface while the RF raised Cr/PI interface had about 10~30 nm thick atomistically mixed interlayer between the metal film and PI substrate. This interlayer appeared to have resulted from the implantation of high energy adatoms during the RF bias sputtering of Cr film. This mixed layer serves as an interlocking layer, which enhances adhesion between the metal and PI layers.

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러빙배향된 액정셀에 대한 자외선 조사효과 (Effects of UV Irradation on the Alignment of Liquid Crystal)

  • 김영식;김재형
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.324-327
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    • 2001
  • Liquid crystal alignments on a rubbed polyimide layer were investigated by using optical transmission method. Using this technique, we also studied the pretilt angle of the polymer molecules near the surface of a side-chain polymer layer as a function of the rubbing strength. In particular, we obtained the optical characteristics of liquid crystal orientations and pretilt angles for LC cell photo-aligned by UV as well after rubbing alignment. High pretilt angle of 3.84 degree was obtained on the weekly rubbed polymide layer duribg UV irradation time of 60min.

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