• Proceedings of the KSME Conference
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• 2001.06a
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• pp.26-36
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• 2001

Smart sensors and actuators have recently been developed. In this study, first, small-diameter fiber Bragg grating (FBG) sensors developed by the author, whose cladding and polyimide coating diameters were 40 and $52{\mu}m$, respectively, were embedded inside a laminate without resin-rich regions around sensors and the deterioration of mechanical properties of the composite laminate. The small-diameter FBG sensor was embedded in $0^{\circ}$ ply of a CFRP laminate for the detection of transverse cracks in $90^{\circ}$ ply of the laminate. The reflection spectra from the FBG sensor were measured at various tensile stresses. The spectrum became broad and had some peaks with an increase of the transverse crack density. Furthermore, the theoretical calculation reproduced the change in the spectrum very well. These results show that the small-diameter FBG sensors have a potential to detect the occurrence of transverse cracks through the change in the form of the spectrum, and to evaluate the transverse crack density quantitatively by the spectrum width. On the other hand, shape memory alloy (SMA) films were used to suppress the initiation and growth of transverse cracks in CFRP laminates. Pre-strained SMA films were embedded between laminas in CFRP laminates and then heated to introduce the recovery stress in SMA films and compressive stresses in the weakest plies ($90^{\circ}$ ply). The effects of recovery stresses are demonstrated in the experiments and well predicted using the shear-lag analysis and the nonlinear constitutive equation of SMA films.

• Proceedings of the KIEE Conference
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• 2007.11a
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• pp.104-105
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• 2007

In this study, characteristics of silver ink-jet printing were investigated under various substrate treatments such as substrate heating, hydrophobic coating, and ultraviolet(UV)/ozone soaking. Fluorocarbon(FC) film was spin-coated on the polyimide (PI) film substrate to obtain a hydrophobic surface. Although hydrophobicity of the FC film could reduce the diameter of the printed droplets, the singlet images printed on the FC film surface showed irregularities in the pattern size and the position of the printed droplet along with droplet merging phenomenon. The proposed UV/ozone soaking of the FC film improved the uniformity of the pattern size and the droplet position after printing and substrate heating was very effective way in preventing droplet merging. By heating of the substrate after UV/ozone soaking of the coated FC film, silver conductive lines of 78-116 ${\mu}m$ line were successfully printed at low substrate temperatures of $40^{\circ}C$.

• Korean Chemical Engineering Research
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• v.49 no.2
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• pp.250-255
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• 2011

In this study, by using the polymeric membrane separation process, the $CO_{2}/CH_{4}$ separation and $H_{2}S$ removal from biogas were performed in order to $CH_{4}$ purification and enrichment for the fuel cell energy source application. Fibers were spun by dry/wet phase inversion method. The module was manufactured by fabricating fibers after surface coating with silicone elastomer. The scanning electron microscopy(SEM) studies showed that the produced fibers typically had an asymmetric structure; a dense top layer supported by a porous, sponge substructure. The permeance of $CO_{2}$ and $CO_{2}/CH_{4}$ selectivity increased with pressure and temperature. Mixture gas with increasing pressure and temperature, removal efficiency of the $CO_{2}$ and $H_{2}S$ were decreased while concentration of $CH_{4}$ was increased up to 100%. When retentate flow rate was increased with the decreasing of pressure and temperature the $CH_{4}$ recovery ratio in retentate side was increased while the $CH_{4}$ purity in retentate side was decreased.

• Korean Journal of Materials Research
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• v.21 no.2
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• pp.115-119
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• 2011

Si Nanowire (NW) field effect transistors (FETs) were fabricated on hard Si and flexible polyimide (PI) substrates, and their electrical characteristics were compared. Si NWs used as channels were synthesized by electroless etching method at low temperature, and these NWs were refined using a centrifugation method to get the NWs to have an optimal diameter and length for FETs. The gate insulator was poly(4-vinylphenol) (PVP), prepared using a spin-coating method on the PI substrate. Gold was used as electrodes whose gap was 8 ${\mu}m$. These gold electrodes were deposited using a thermal evaporator. Current-voltage (I-V) characteristics of the device were measured using a semiconductor analyzer, HP-4145B. The electrical properties of the device were characterized through hole mobility, $I_{on}/I_{off}$ ratio and threshold voltage. The results showed that the electrical properties of the TFTs on PVP were similar to those of TFTs on $SiO_2$. The bending durability of SiNWs TFTs on PI substrate was also studied with increasing bending times. The results showed that the electrical properties were maintained until the sample was folded about 500 times. But, after more than 1000 bending tests, drain current showed a rapid decrease due to the defects caused by the roughness of the surface of the Si NWs and mismatches of the Si NWs with electrodes.

• Korean Journal of Optics and Photonics
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• v.27 no.4
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• pp.143-150
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• 2016

The thickness of each layer in a multilayered system is determined by a Fourier-transform method using spectroscopic reflectance measurements. To verify this method, we first generate theoretical reflectance spectra for three layers, and these are fast-Fourier-transformed using our own Matlab program. Each peak of the Fourier-transformed delta function denotes the optical thickness of each layer, and these are transformed to physical thicknesses. The relative thickness error of the theoretical model is less than 1.0% while a layer's optical thickness is greater than 730 nm. A PI-(thin $SiO_2$)-PImultilayeredstructure produced by the bar-coating method was analyzed, and the thickness errors compared to SEM measurements. Even though this Fourier-transform method requires knowing the film order and the refractive index of each layer prior to analysis, it is a fast and nondestructive method for the analysis of multilayered structures.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1313-1314
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• 2007

This paper presents organic thin-film transistors (OTFTs) with poly(3-hexylthiophene)(P3HT) semiconductor and several polymeric dielectric materials of poly(vinyl phenol)(PVP), poly(vinyl alcohol)(PVA), and polyimide(PI) by using soluble process. The fabricated OTFT's have inverted staggered structure using transmission line method(TLM) pattern. In order to evaluate the electrical characteristics of the OTFT, capacitance-voltage(C-V) and current-voltage(I-V) were measured. C-V graphs were measured at several frequencies of 100 Hz, 1 kHz, and 1 MHz and ID-VDS graphs according to $V_{GS}$. The current on/off ratio and threshold voltage with each of PVP, PVA, and PI based OTFTs were measured to $10^3$, and -0.36, -0.41, and -0.62 V. Also, the calculated mobility with each of PVP, PVA, and PI was 0.097, 0.095, and 0.028 $cm^{2}V^{-1}s^{-1}$, respectively. In the cases of PVP and PVA, the hole mobility of P3HT was in excellent agreement with the published value of 0.1 $cm^{2}V^{-1}s^{-1}$.

• Korean Journal of Materials Research
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• v.17 no.10
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• pp.509-515
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• 2007

In order to fabricate adhesiveless 2-layer flexible copper clad laminate (FCCL) used for COF (chip on film) with high peel strength, polyimide (PI; Kapton-EN, $38\;{\mu}m$) surface was modified by reactive $O_2^+$ and $N_2O^+$ ion beam irradiation. 300 mm-long linear electron-Hall drift ion source was used for ion irradiation with ion current density (J) higher than $0.5\;mA/cm^2$ and energy lower than 200 eV. By vacuum web coating process, PI surface was modified by linear ion source and then 10-20 nm thick Ni-Cr and 200 nm thick Cu film were in-situ sputtered as a tie layer and seed layer, respectively. Above this sputtered layer, another $8-9{\mu}m$ thick Cu layer was grown by electroplating and subsequently acid and base resistance and thermal stability were tested for examining the change of peel strength. Peel strength for the FCCLs treated by both $O_2^+$ and $N_2O^+$ ion irradiation showed similar magnitudes and increased as the thickness of tie layer increased. FCCL with Cu (200 nm)/Ni-Cr (20 nm)/PI structure irradiated with $N_2O^+$ at $1{\times}10^{16}/cm^2$ ion fluence was proved to have a strong peel strength of 0.73 kgf/cm for as-received and 0.34 kgf/cm after thermal test.

• Journal of the Korean Vacuum Society
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• v.17 no.3
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• pp.195-198
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• 2008

In this paper, it was demonstrated that organic thin-film transistors (OTFTs) were fabricated with the organic passivation layer by vapor deposition polymerization (VDP) processing. In order to form polymeric film as a passivation layer, VDP process was also introduced instead of spin-coating process, where polymeric film was co-deposited by high-vacuum thermal evaporation from 6FDA and ODA followed by curing. In order to investigate by compared with different passivation layer, the other OTFTs is fabricated to passivation by Polyvinylalcohol using spincoating. We can see that two different ways of passivation layer affect electric characteristic of OTFTs. The initial electric characteristic of OTFTs before passivation such as field effect mobility, threshold voltage, and on-off current ratio are $0.24cm^2/Vs$, -3V, and $10^6$, respectively. Then after polyimide passivation layer, field effect mobility change from $0.24cm^2/Vs$ to $0.26cm^2/Vs$, threshold voltage from -3V to 1V and on-off current ratio from $10^6$ to $10^6$, respectively. In the case of polyvinylalcohol passivation, the initial electric characteristic of OTFTs before passivation such as field effect mobility, threshold voltage, and on-off current ratio are $0.13cm^2/Vs$, 0V, and $10^6$, respectively. Then after polyvinylalcohol passivation layer, field effect mobility changes from $0.13cm^2/Vs$ to $0.13cm^2/Vs$, threshold voltage from 0V to 2V, and on-off current ratio from $10^6$ to $10^5$, respectively.

• Korean Chemical Engineering Research
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• v.50 no.5
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• pp.929-932
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• 2012

Novel platform technology has been developed to replace the photolithography used currently for manufacturing semiconductors and display devices. As a substrate, plastics, especially polycarbonates, have been considered for future application such as flexible display. Other plastics, i.e. polyimide, polyetheretherketon, and polyethersulfone developed for the substrate at this moment, are available for photolithography due to their high glass transition temperature, instead of high price. After thin polystyrene film was coated on the polycarbonate substrate, microstructure of the film was formed with polydimethylsiloxane template over the glass transition temperature of the polystyrene. The surface of the structure was treated with potassium permanganate and octadecyltrimethoxysilane so that the surface became hydrophobic. After this surface treatment, the nanoparticles dispersed in aqueous solution were aligned in the structure followed by evaporation of the DI water. Without the treatment, the nanoparticles were placed on the undesired region of the structure. Therefore, the interfacial interaction was also utilized for the nanoparticle alignment. The surface was analyzed using X-ray photoelectron spectrometer. The evaporation of the solvent occurred after several drops of the solution where the hydrophilic nanoparticles were dispersed. During the evaporation, the alignment was precisely guided by the physical structure and the interfacial interaction. The alignment was applied to the electric device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.430-430
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• 2007

In general, polyimides (PIs) are used in liquid crystal displays (LCDs) as alignment layer of liquid crystals (LCs). Up to date, the rubbing alignment technique has been widely used to align liquid crystals on the PI surface, which is suitable for mass-production of LCDs because of its simple process and high productivity. However, this method has some disadvantages. Rubbed PI surfaces include the debris left by the cloth and the generation of electrostatic charges during rubbing process. Therefore, rubbing-free techniques for LC alignment are strongly required in LCD technology. In this experiment, PI was uniformly coated on indium-tin-oxide electrode substrates to form LC alignment layers using a spin-coating method and the PI layers were subsequently imidized at 433 K for 1 h. The thickness of the PI layer was set at 50 nm. The LC alignment layer surfaces were exposed to an $Ar^+$ ion-beam under various ion-beam energies. The antiparallel cells and twisted-nematic (TN) cells for the measurement of pretile angle and electro-optical characteristics were fabricated with the cell gap of 60 and $5\;{\mu}m$, respectively. The LC cells were filled with nematic LC (NLC, MJ001929, Merck) and were assembled. The NLC alignment capability on ion-beam-treated PI was observed using photomicroscope and the pretilt angle of the NLC was measured by the crystal-rotation method at room temperature. Voltage-transmittance (V-T) and response time characteristics of the ion-beam irradiated TN cell were measured by a LCD evaluation system.