• Journal of the Korean institute of surface engineering
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• v.50 no.3
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• pp.164-169
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• 2017

Ni-Cr-X ternary interlayers were investigated to improve the adhesion of Cu/Ni-Cr/Polyimide flexible copper clad laminates. The ternary compounds are sputtered Ni-Cr-X films (where X is one of Nb, V, Mo, or Ti), and the effect of third elements on the adhesion was evaluated and investigated chemically and mechanically. The feel strength was higher in the order of Ni-Cr-Nb > Ni-Cr-V > Ni-Cr > Ni-Cr-Mo > Ni-Cr-Ti. Nb, which has a comparable standard electrode potential to Cr, increased the adhesion, while Ti, with a low standard electrode potential, degraded the adhesion. The Ni-Cr-Nb interlayer was amorphous, while Ni-Cr-Ti was partially crystalline. The similar morphology structure of the Ni-Cr-Nb interlayer with polyimide resulted in a better adhesion.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.278-278
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• 2012

최근 폴리이미드(Polyimide) 고분자 물질을 기판으로 하는 플렉시블 전자소자 구현에 관한 연구가 활발히 진행 되고 있다. 폴리이미드는 수분 흡수율이 1% 이하인 소수성 물질로서 폴리이미드 기판 위 전극 형성에 있어 전극 물질이 분리되는 현상이 발생하게 된다. 따라서 본 연구에서는 소수성의 표면 성질을 갖는 폴리이미드 기판의 Asher 처리를 통한 표면 최적화에 대한 실험을 진행하였다. 유리기판 위에 액상 폴리이미드를 ${\sim}10{\mu}m$ 두께로 Spin coating 한 후 $120^{\circ}C$ hot plate에서의 soft bake와 $200^{\circ}C$, $320^{\circ}C$의 furnace에서의 단계적 cure 과정을 통해 표면의 defect을 최소화하였다. Microwave Asher 장비를 이용하여 폴리이미드 막에 10초, 15초, 20초 동안 asher 처리를 한 후 Atomic Force Microscopy (AFM) 장비로 시간에 따른 폴리이미드 기판 표면의 변화를 확인하였다. AFM 확인 결과 10 초의 공정 조건에서 가장 우수한 표면 morphology를 보였으며, 이는 표면의 탄소와 이물질을 제거하기 위해 사용되는 asher 처리 시간이 상대적으로 증가함에 따라 폴리이미드 막의 탄소 성분이 제거 되면서 표면의 형상이 최적화 이상으로 변화하기 때문이다. 본 실험은 폴리이미드를 기반으로 하는 플렉시블 전자소자 구현에 있어 전극 및 소자 제작에 크게 기여할 것으로 판단된다.

• Investigative Magnetic Resonance Imaging
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• v.13 no.2
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• pp.171-176
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• 2009

Purpose : To investigate the effect of coating material in RF coil, which is one of main parts in MRI machine, on the Q-factor and SNR(signal-to-noise ratio) in MR images. Materials and Methods : RF coils with inner diameter of 1.7 mm were made by using copper wires coated with polyester, polyurethane, polyimide, polyamideimide, and polyester-imide, and by using copper wires in which coating materials had been removed. Q-factors of the RF coils were measured by network analyzer, and SNR values in the spin-echo MR images obtained by 600 MHz (14.1 T, Bruker DMX600) micro-imaging system for the coated and uncoated cases. Results : The measured SNRs were almost same for the RF coils with coat-removed copper wires, however SNRs and Q-factors were different for the coated cases depending on the coating material. They were maximized in the polyurethane-coated case in which the SNR was > 30% greater than polyester-coated case. Conclusion : We made solenoid-type RF coils which were easily used for MR micro-imaging in Bruker MRI probe. There was a significant coating-material dependence in the measured Q values and SNRs for the home-made RF coils. The study demonstrated that the choice of coating material of RF coil may be a critical factor in the MRI sensitivity based on SNR value.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.1
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• pp.51-54
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• 2002

Polymer EL devices of glass/ITO/PI/MEH-PPV/Al structure were fabricated using spin coating and the Ionized Cluster Beam deposition technique. PMDA-ODA type thin polyimide films which can be used as a impurity blocking layer of EL device were deposited by ICB. According to our previous results, the packing densities of polyimide films were subject to change and depend on their deposition condition. By inserting a Pl layer with various thickness and packing density, I-V characteristics and life time of the devices were investigated to determine the role of a interlayer. The blocking of impurity diffusion from ITO to luminescent layer were confirmed by XPS.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.4 no.4
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• pp.361-365
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• 2003

A unipolar-type E-chuck was fabricated for the application of holding silicon wafers in the oxide etcher. For the fabrication of the unipolar ESC, core technologies such as coating of polyimide films and anodizing treatment of aluminum surface were developed. The polyimide films were prepared on thin coated copper substrates to minimize the plasma damage during the etch processing. Thin film heater technology was also developed for new type of E-chuck.

• Membrane Journal
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• v.19 no.4
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• pp.261-267
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• 2009

Polyimide which is the glassy polymer has high chemical resistance, thermal stability and high mechanical property. In this study, the polyimide hollow fiber membranes were prepared by the dry-jet wet phase inversion in order to investigate the permeation porperties of the $H_2S$ and $CH_4$. The morphology of prepared hollow fiber membranes and their permeation behaviors of $H_2S$ and $CH_4$ before and after silicon coating were evaluated. The permeance of $H_2S$ and $H_2S/CH_4$ selectivity increased due to plasticization with increasing the feed pressure. The permeance of KSM03b and selectivity of KSM03d were highest among the three type membranes used this experiments. The permeance decreased but the $H_2S/CH_4$ selectivity increased with increasing the air gap. The permeance reduced after silicon coating. However, the selectivity increased and the selectivity of KSM03d was 275 at 7 atm.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.2
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• pp.71-76
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• 2019

Recently, the demand of labels for product management is increasing, as the automation system becomes more common. the development of functional labels which can be used in various environments has been rapidly proceeded. In the case of a printed circuit board, barcode labels with thermal and chemical stability are generally used due to a high temperature process around $300^{\circ}C$ and chemical cleaning in the manufacturing process. However, the yellowing phenomenon of labels that can lower the resolution of printed barcode image still needs to be prevented. In this study, we prepared a composite coating layer using a silica inorganic binder and a titanium dioxide white pigment, and developed a functional labels with thermal and chemical stability. The silica inorganic binder prepared by sol-gel process was confirmed to show excellent adhesion and abrasion resistance with the polyimide film. The white coating layer could be formed on the polyimide film with mixing the silica inorganic binder and titanium dioxide white pigment. The prepared coating layer showed excellent whiteness and glossiness above $400^{\circ}C$. The excellent chemical stability of the coating layer was also confirmed by the chemical treatment with acidic (pH 1.6) and basic (pH 13.6) cleaners.

• Korean Journal of Materials Research
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• v.29 no.10
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• pp.631-638
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• 2019

As automation systems become more common, there is growing interest in functional labeling systems using organic and inorganic hybrid materials. Especially, the demand for thermally and chemically stable labeling paper that can be used in a high temperature environment above $300^{\circ}C$ and a strong acid and base atmosphere is increasing. In this study, a composite coating solution for the development of labeling paper with excellent thermal and chemical stability is prepared by mixing a silica inorganic binder and titanium dioxide. The silica inorganic binder is synthesized using a sol-gel process and mixed with titanium dioxide to improve whiteness at high-temperature. Adhesion between the polyimide substrate and the coating layer is secured and the surface properties of the coating layer, including the thermal and chemical stability, are investigated in detail. The effects of the coating solution dispersion on the surface properties of the coating layer are also analyzed. Finally, it is confirmed that the developed functional labeling paper showed excellent printability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.28-28
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• 2009

Fabrications of antireflection structures on solar cell were investigated to trap the light and to improve quantum efficiency. Introductions of patterned substrate or textured layer for Si solar cell were performed to prevent reflectance and to increase the path length of incoming light. However, it is difficult to deposit conformally flat electrode on perpendicular plane. ZnO is II-VI compound semiconductor and well-known wide band-gap material. It has similar electrical and optical properties as ITO, but it is nontoxic and stable. In this study, Al-doped ZnO thin films are deposited as transparent electrode by atomic layer deposition method to coat on Si substrate with micro-scale structures. The deposited AZO layer is flatted on horizontal plane as well as perpendicular one with conformal 200 nm thickness. The carrier concentration, mobility and resistivity of deposited AZO thin film on glass substrate were measured $1.4\times10^{20}cm^{-3}$, $93.3cm^2/Vs$, $4.732\times10^{-4}{\Omega}cm$ with high transmittance over 80%. The AZO films were coated with polyimide and performed selective polyimide stripping on head of column by reactive ion etching to measure resistance along columns surface. Current between the micro-columns flows onto the perpendicular plane of deposited AZO film with low resistance.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.661-664
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• 2004

In this paper, it was demonstrated that the organic thin film transistors with the organic gate insulators were fabricated by vapor deposition polymerization (VDP) processing. The configuration of OTFTs was a staggered-inverted top-contact structure and gate dielectric layer was deposited with 0.45 ${\mu}m$ thickness. In order to form polyimide as a gate insulator, VDP process was also introduced instead of spin-coating process. Polyimide film was respectively co-deposited with different materials. One was from a 4,4'-oxydiphthalic anhydride (ODPA) and 4, 4'-oxydianiline (ODA) and the other was from 2,2-bis(3,4-dicarboxyphenyl) hexafluoropropane dianhydride (6FDA) and ODA. And it was also cured at 150 $^{\circ}C$ for 1 hour followed by 200 $^{\circ}C$ for 1 hour. Electrical characteristics of the organic thin-film transistors were detailed comparisons between the ODPA-ODA and the 6FDA-ODA which were used as gate insulator.