• Korean Chemical Engineering Research
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• 제43권2호
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• pp.305-312
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• 2005

본 연구에서는 새로운 형태의 미세 전자 소자용 절연필름으로서 사용이 기대되는 폴리우레탄이미드를 용해성 폴리이미드와 폴리우레탄의 가교에 의해 합성하여 폴리우레탄의 함량에 따른 잔류응력 및 모폴로지, 열적 특성변화에 관해 연구하였다. 기존의 폴리우레탄이미드와는 달리 가교가 가능한 말단기로서 maleic anhydride(MA)를 사용하여 용해성 폴리이미드(6FDA-ODA/MA)를 화학적 이미드화법을 사용하여 합성하였다. 여기에 폴리우레탄 전구체를 hydroxyl ethyl acrylate로 반응시켜 만들어진 폴리우레탄을 가교시킴으로써 네트워크 구조의 새로운 폴리우레탄이미드 필름을 제조한 후 thin film stress analyzer(TFSA), XRD, TGA, DMTA를 이용해 그 특성을 분석하였다. 종래의 다른 폴리우레탄이미드 합성법과는 차별화된 각각의 폴리머의 가교형 말단끼리의 결합을 유도하는 제조법을 이용하여 합성함으로써 상온에서 잔류응력 값이 폴리우레탄의 함량이 증가할수록 감소하는 것으로 나타났다. 이러한 응력 실험 결과는 고분자 주쇄 구조의 모폴로지에 의해 영향을 받는 것을 확인할 수 있었고, 열안정성 또한 기존 폴리우레탄($240^{\circ}C$)에 비해 많이 향상된 것을 확인할 수 있었다. 잔류응력 측정 온도 범위하에서 열팽창계수는 폴리우레탄의 함량이 증가함에 따라 증가하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.429-429
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• 2007

For various applications of liquid crystal displays (LCDs), the uniform alignment of liquid crystal (LC) molecules on treated surfaces is significantly important. Generally, a rubbing method has been widely used to align the LC molecules on polyimide (PI) surfaces. Rubbed PI surfaces have suitable characteristics, such as uniform alignment. However, the rubbing method has some drawbacks, such as the generation of electrostatic charges and the creation of contaminating particles. Thus, we strongly recommend a non contact alignment technique for future generations of large high-resolution LCDs. Most recently, the LC aligning capabilities achieved by ultraviolet and ion-beam exposures which are non contact methods, on diamond-like carbon (DLC) inorganic thin film layers have been successfully studied because DLC thin films have a high mechanical hardness, a high electrical resistivity, optical transparency, and chemical inertness. In addition, nitrogen-doped DLC (NDLC) thin films exhibit properties similar to those of the DLC thin films and a higher thermal stability than the DLC thin films because C:N bonding in the NDLC thin filmsis stronger against thermal stress than C:H bonding in the DLC thin films. Our research group has already studied the NDLC thin films by an ion-beam alignment method. The $SiN_x$ thin films deposited by plasma-enhanced chemical vapor deposition are widely used as an insulation layer for a thin film transistor, which has characteristics similar to those of DLC inorganic thin films. Therefore, in this paper, we report on LC alignment effects and pretilt angle generation on a $SiN_x$, thin film treated by ion-beam irradiation for various N ratios

• 전기학회논문지
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• 제67권3호
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• pp.406-412
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• 2018

This paper describes the fabrication process of laser induced graphene (LIG) and its transfer method on to a flexible and stretchable PDMS substrate. By irradiating CO2 laser on a polyimide(PI) film surface, a localized high temperature is created, resulting in a three-dimensional porous graphene network structure with good conductivity. This LIG electrode is relatively easy to fabricate and since it is very weak the LIG electrode was transferred to a flexible PDMS substrate to increase the sturdiness as well as possible use in flexible applications. Sheet resistance, thickness, and electrochemical activity of the fabricated in-situ LIG electrodes have been examined and compared with the LIG electrodes after transferring to PDMS elastomer. The properties of the LIG electrodes were also examined depending on the $CO_2$ laser power. As the irradiated laser power increased, the LIG electrode resistance decreases and the LIG electrode thickness increased. At 4.8 W of laser power, the average sheet resistance and thickness of the fabricated LIG electrodes were approximately $31.7{\Omega}/{\Box}$ and $62.67{\mu}m$, respectively. Moreover, the electrochemical activity of the fabricated LIG electrode at 4.8 W of laser power showed a high oxidation current of $28.2{\mu}A$ after transferring to PDMS.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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• pp.57-60
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• 2003

Electro-Optical (EO) performances for the ion beam (IB) aligned twisted-nematic (TN)-liquid crystal display (LCD) with ion beam exposure on the new of diamond like carbon (DLC) thin film surface were investigated. Voltage-transmittance (V-T) curve and response time without backflow bounce in the ion beam aligned TN-LCD with ion beam exposure for 0.5 and 1min on the DLC thin film was observed. Also. the fast response time of ion beam aligned TN-LCD with ion beam exposure for 1min on the DLC thin film surface can be achieved. The residual DC voltage of the ion beam aligned TN-LCD on the DLC thin film surface was almost the same as that of the rubbing aligned TN-LCD on the polyimide(PI) surface.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 제2회 학술대회 논문집 일렉트렛트 및 응용기술전문연구회
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• pp.11-14
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• 2000

This paper describes a thennally stimulated displacement current(TSDC) of polyamic acid alkylamine salts(PAAS) Langmuir-Blodgett(LB) films, which is a precursor of polyimide(PI). The TSDC measurements of PAAS LB film were performed from room temperature to about $250^{\circ}C$ and the temperature was increased at a rate of $0.2^{\circ}C/s$. This show that this is TSDC peaks at about $70^{\circ}C$ in the arachidic acid LB films, and at about $70^{\circ}C$ and $160^{\circ}C$ in the PAAS LB films. Results of this measurements indicate that one small peak at $70^{\circ}C$ is resulted from a softening of the alkyl group and the large peak at $160^{\circ}C$ is possibly due to dipole moment of C-O group in the PAAS molecule. We have calculated the vertical component of dipole moment of the P AAS LB film out of the TSDC curves. It shows that the dipole moment of PAAS LB film is about -40mD at $70^{\circ}C$ and about 200mD at $160^{\circ}C$ in the first measurement of TSDC. In the second measurement of TSDC of PAAS LB film after cooling down to room temperature, the TSDC peaks are almost disappeared.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.278.1-278.1
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• 2014

Organic materials have been explored as the gate dielectric layers in thin film transistors (TFTs) of backplane devices for flexible display because of their inherent mechanical flexibility. However, those materials possess some disadvantages like low dielectric constant and thermal resistance, which might lead to high power consumption and instability. On the other hand, inorganic gate dielectrics show high dielectric constant despite their brittle property. In order to maintain advantages of both materials, it is essential to develop the alternative materials. In this work, we manufactured nanocomposite gate dielectrics composed of organic material and inorganic nanoparticle and integrated them into organic TFTs. For synthesis of nanocomposite gate dielectrics, polyimide (PI) was explored as the organic materials due to its superior thermal stability. Candidate nanoprticles (NPs) of halfnium oxide, titanium oxide and aluminium oxide were considered. In order to realize NP concentration dependent electrical characteristics, furthermore, we have synthesized the different types of nanocomposite gate dielectrics with varying ratio of each inorganic NPs. To analyze gate dielectric properties like the capacitance, metal-Insulator-metal (MIM) structures were prepared together with organic TFTs. The output and transfer characteristics of organic TFTs were monitored by using the semiconductor parameter analyzer (HP4145B), and capacitance and leakage current of MIM structures were measured by the LCR meter (B1500, Agilent). Effects of mechanical cyclic bending of 200,000 times and thermally heating at $400^{\circ}C$ for 1 hour were investigated to analyze mechanical and thermal stability of nanocomposite gate dielectrics. The results will be discussed in detail.

• 한국전기전자재료학회논문지
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• 제17권10호
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• pp.1100-1106
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• 2004

In this paper, we intend to make fringe-field switching (FFS) mode cell by the ion beam (IB) alignment method on the a-C：H thin film, to analyze electro-optical characteristics in this cell. We studied on the suitable inorganic thin film for fringe-field switching (FFS) cell and the aligning capabilities of nematic liquid crystal (NLC) using the alignment material of a-C：H thin film as working gas at 30 W rf bias condition. A high pretilt angle of about 5 $^{\circ}C$ by ion beam (IB) exposure on the a-C：H thin film surface was measured. Consequently, the high pretilt angle and the good thermal stability of LC alignment by the IB alignment method on the a-C：H thin film surface as working gas at 30 W rf bias condition can be achieved. An excellent voltage-transmittance (V -T) and response time curve of the IE-aligned FFS-LCD was observed with oblique IB exposure on the a-C：H thin films. Also, AC V-T hysteresis characteristics of the IB-aligned FFS-LCD with IE exposure on the a-C：H thin films is almost the same as that of the rubbing-aligned FFS cell on a polyimide (PI) surface.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2017년도 춘계학술대회 논문집
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• pp.110-110
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• 2017

마이크로 플루이딕 디바이스는 화학, 생물학 실험 및 생체 의학 진단을 위한 플랫폼으로 지난 20년간 그 사용 및 연구가 증가되어 왔다. 마이크로 플루이딕 디바이스를 제작하는 데 있어 가장 일반적으로 사용되는 재료는 실리콘이지만 비용이 많이 들고 불투명하므로 광학 검출이 필요한 곳에 적용이 제한된다. 이러한 측면에서 열가소성 플라스틱은 상업화의 중요한 요소인 대량 생산에 있어 큰 잠재력을 가지고 있으며 저렴하고, 가공이 쉽고, 유연하고, 광학적으로 투명하고, 화학적으로 불활성이며, 생체적합성을 가진다. 본 연구에서는 열가소성 플라스틱의 일종인 PMMA Poly(methylmethacrylate)를 효율적으로 접합하기 위해 비교적 낮은 온도와 낮은 압력에서 에탄올을 활용한 접착방식을 개발하였다. 먼저, PMMA 기판의 전체 표면을 $80^{\circ}C$에서 20 분 동안 에탄올로 처리한 후, $60^{\circ}C$에서 20 분간 열 압착하는 방식으로 영구적인 결합이 이루어졌다. 결합 강도 및 채널의 sealing 정도를 확인하기 위해, 인장 강도, 누수 및 파열 테스트를 수행하였다. 결합강도는 약 12.4 MPa로 타 연구와 비교할 때 매우 높았으며 마이크로 채널의 전체 내부 체적보다 거의 450 배 높은 강한 액체 흐름을 견딜 정도로 견고한 결합이 유지되었다. 열가소성 플라스틱의 본딩에 사용되는 유기 용매는 광학 특성을 희생시키지 않으면서 결합 속도를 높일 수 있지만, 결합 공정 중에 용매로 인해 마이크로 채널이 막히는 현상이 발생될 수 있다. 따라서, 견고한 본딩을 유지하면서 채널 막힘을 방지하기 위해 마이크로 채널을 소수성으로 선택적으로 처리하여 내벽의 표면 특성을 튜닝해 주는 기법을 추가로 적용하였다. 본 연구에서 사용한 방법은 아민-PDMS (polydimethylsiloxane) 링커를 적용하여 기판 표면의 극성을 변경시켜 주었다. 아민-PDMS 링커는 PC (polycarbonate), PET (polyethylene terephthalate), PVC (polyvinyl chloride) 및 PI (polyimide)와 같은 다양한 열가소성 플라스틱의 표면 소수성을 현저히 증가시키며 화학적, 열적 안정성이 뛰어나다. 아민-PDMS 링커는 PMMA의 카보닐 그룹과 반응할 수 있는 아민 사이드 그룹을 포함하는 PDMS 백본으로 구성되며 처리된 대상표면을 소수성으로 만든다. 아민-PDMS 링커 처리 이후 채널은 소수성으로 변화되었으며 이는 접촉각(contact angle)의 증가로 확인되었다. 코팅된 채널을 에탄올로 30분간 80도에서 처리하여도 소수성은 그대로 유지되어 마이크로 채널의 선택적인 소수성 코팅이 성공적으로 수행되었다.

• 한국전기전자재료학회논문지
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• 제11권8호
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• pp.581-586
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• 1998

This paper describes athermally stimulated displacement current (TSDC) of arachidic acid(AA) and polyamic acid alkylamine salts(PAAS) Langmuir-Blodgett(LB) films, which is a precursor of polyimide(PI). The TSDC measurements of AA LB film were performed from temperature to about 11$0^{\circ}C$ at a rate of 0.2$^{\circ}C$/ｓ inside a vacuum chamber for a reference. And the TSDC measurements PAAS LB film were performed from room temperature to about 25$0^{\circ}C$ and temperature was increased at the same rate as that of AA LB film. They show that there are TSDC peaks at about 7$0^{\circ}C$ in the arachidic acid LB films, and at about 7$0^{\circ}C$ and 16$0^{\circ}C$ in the PAAs LB films. Results of these measurements indicate the one small peak at 7$0^{\circ}C$ is resulted from a softening of the alkyl group and the large peak at 16$0^{\circ}C$ is possibly due to dipole of C-O group in the PASS molecule. We have calculated the vertical component of the AA and PAAs L film out of the TSDC curves. It shows that the dipole moment of the AA LB film is about 70-mD at 7$0^{\circ}C$. And the dipole moment of PAAS LB film is about 040mD at 7$0^{\circ}C$ and about 200mD at 16$0^{\circ}C$ in the first measurement of TSDC. In the second measurement of TSDC of PASS LB film after cooling down to room temperature, the TSDC peaks are almost disappeared.

• 한국표면공학회지
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• 제50권6호
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• pp.510-515
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• 2017

In this study, a transient liquid phase sintering (TLPS) process of Ag pastes mixed with a fusible metal alloy of Bi58Sn42 with the melting temperature of $138^{\circ}C$, was examined. After screen printing of the Ag pastes with and without Bi58Sn42 powders on polyimide (PI) substrates, the electrodes were heat-treated at different temperatures in the range between 150 and $300^{\circ}C$ for 60 min in air. Comparing the electrical conductivity of the Ag pastes with and without Bi58Sn42 alloy powder after the heat treatment, it was manifested that the low melting temperature alloy definitely played a major role in an increased conductivity when it is added into the Ag pastes by providing more electrical conduction paths between Ag particles. This can be explained by the fact that capillary force of the melts of Bi58Sn42 can contribute to the rearrangement of the Ag particles during the heat-treatment inducing better connectivity between the Ag particles.