• Korean Journal of Materials Research
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• v.13 no.7
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• pp.436-441
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• 2003

The characteristics of <112> orientation were studied for the $TiO_2$thin films, which were prepared on the glass by CVD (chemical vapor deposition) at various substrate temperatures. It was confirmed that $TiO_2$ films exhibited <112>-preferred orientation in a specific temperature range. Although $TiO_2$polycrystalline film grown deposited at relatively low temperature showed the growth of random directions, the <112>-preferred orientation was gradually developed with increasing deposition temperature. According to exhibit higher degree of <112>-preferred orientation, $TiO_2$thin film showed porous surface morphology, well-developed columnar structure, and deeper voids resulted from non-aggregation of columns were observed. In addition, transmittance was enhanced. Therefore, the growth of $TiO_2$with <112>-preferred orientation is suitable for glass coating because of predominance of photocatalytic efficiency and transmittance.

• Korean Journal of Materials Research
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• v.17 no.6
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• pp.308-312
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• 2007

Chromium oxide thin films have been deposited on silicon substrates using a tabletop 9kJ mathertyped plasma focus (PF) device. Before deposition, pinch behavior with gas pressure was observed. Strength of pinches was increased with increasing working pressure. Deposition was performed at room temperature as a function of working pressure between 50 and 1000 mTorr. Composition and surface morphology of the films were analyzed by Auger Electron Spectroscopy and Scanning Electron Microscope, respectively. Growth rates of the films were decreased with pressure. The oxide films were polycrystalline containing some impurities, Cu, Fe, C and revealed finer grain structure at lower pressure.

• Journal of Magnetics
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• v.19 no.4
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• pp.333-339
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• 2014

Single crystal growth of $BaFe_{12}O_{19}$ by the solid state crystal growth method was attempted. Seed crystals of ${\alpha}-Fe_2O_3$ were pressed into pellets of $BaFe_{12}O_{19}$ + 2 wt% $BaCO_3$ and heat-treated at temperatures between $1150^{\circ}C$ and $1250^{\circ}C$ for up to 100 hours. Instead of single crystal growth taking place on the seed crystal, BaO diffused into the seed crystal and reacted with it to form a polycrystalline reaction layer of $BaFe_{12}O_{19}$. The microstructure, chemical composition and structure of the reaction layer were studied using scanning electron microscopy-energy dispersive spectroscopy (SEM-EDS), x-ray Diffraction (XRD) and micro-Raman scattering and confirmed to be that of $BaFe_{12}O_{19}$. XRD showed that the reaction layer shows a strong degree of orientation in the (h00)/(hk0) planes in the sample sintered at $1200^{\circ}C$. $BaFe_{12}O_{19}$ layers with a degree of orientation in the (hk0) planes could also be grown by heat-treating an ${\alpha}-Fe_2O_3$ seed crystal buried in $BaCO_3$ powder.

• Bulletin of the Korean Chemical Society
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• v.35 no.11
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• pp.3261-3266
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• 2014

A pellet of polycrystalline $CuGaO_2$ with a delafossite structure was prepared from $Ga_2O_3$ and CuO by high-temperature solid-state synthesis. The $CuGaO_2$ pellet was a p-type semiconductor for which the electrical conductivity, carrier density, carrier mobility and Seebeck coefficient were $5.34{\times}10^{-2}{\Omega}^{-1}cm^{-1}$, $3.5{\times}10^{20}cm^{-3}$, $9.5{\times}10^{-4}cm^2V^{-1}s^{-1}$ at room temperature, and $+360{\mu}V/K$, respectively. It also exhibited two optical transitions at about 2.7 and 3.6 eV. The photoelectrochemical properties of the $CuGaO_2$ pellet electrode were investigated in aqueous electrolyte solutions. The flat-band potential of this electrode, determined using a Mott-Schottky plot, was +0.18 V vs SCE at pH 4.8 and followed the Nernst equation with respect to pH. Under UV light illumination, a cathodic photocurrent developed, and molecular hydrogen simultaneously evolved on the surface of the electrode due to the direct reduction of water without deposition of any metal catalyst.

• Bulletin of the Korean Chemical Society
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• v.32 no.9
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• pp.3338-3342
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• 2011

We fabricated ceria ($CeO_2$) nanofibers by applying a mixed solution of polyvinylpyrrolidone (PVP) and various concentrations of cerium nitrate hydrate ($Ce(NO_3)_3$) ranging from 15.0 to 26.0 wt % by the electrospinning process. Ceria nanofibers were obtained after calcining PVP/$Ce(NO_3)_3$ nanofiber composites at 873 and 1173 K. The SEM images indicated that the diameters of $CeO_2$ nanofibers calcined at 873 and 1173 K were smaller than those of nanofibers obtained at RT. As the amount of cerium increased, the diameter of $CeO_2$ nanofibers increased. XRD analysis revealed that the ceria nanofibers were in cubic form. TEM results revealed that the ceria nanofibers were formed by the interconnection of Ce oxide nanoparticles. The ceria nanofibers obtained at low concentrations of Ce (CeL) showed spotty ring patterns indicated that the ceria nanofibers were polycrystalline structure. And the ceria nanofibers obtained at high concentration of Ce (CeH) showed fcc (001) diffraction pattern. XPS study indicated that the oxidation of Ce shifted from $Ce^{3+}$ to $Ce^{4+}$ as the calcination temperature increased.

• Journal of the Korean Ceramic Society
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• v.24 no.6
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• pp.543-552
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• 1987

The effects of deposition variables on SnO2 CVD were investigated for SnCl4＋O2 reaction at 300∼700$^{\circ}C$, Psncl4=1${\times}$10-5∼1${\times}$10-3 atm, and Po2=5${\times}$10-4∼1 atm. A thermodynamic equilibrium study on Sn-Cl-O system has been performed with the computer calculation. The calculation indicates that major species participating the reaction in SnCl4 and not intermediate species, SnCl2. Good uniformity of the film thickness was obtained at the flow rate of 11cm/sec, which resulted from the stable gas flow in our cold wall reactor. The experimental results showed that apparent activation energy of the deposition was about 13.5Kcal/mole below the temperature of 500$^{\circ}C$ and the deposition mechanism was controlled by surface reation. The behavior of deposition rate on the reactant partial pressures could be explained with the Langmuri-Hinshelwood mechanism. X-ray study demonstrated that SnO2 film deposited at temperatures above 400$^{\circ}C$ were polycrystalline with tetragonal rutile structure and grew with (211) and (301) preferred orientations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.783-786
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• 2003

Thin films of vanadium oxide(VOx) have been deposited by r.f. magnetron sputtering from $V_2O_5$ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio of 0% and 8% is adopted. Crystal structure and optical properties of films sputter-deposited under different oxygen gas pressures and in situ annealed in vacuum at $400^{\circ}C$ for 1h and 4h are characterized through XRD and optical absorption measurements. The films as-deposited are amorphous, but $0%O_2$ films annealed for time longer than 4h and $8%O_2$ films annealed for time longer than 1h are polycrystalline. The optical transmission of the films annealed in vacuum decreases considerably than the as-deposited films and the optical absorption of all the films increases rapidly at wavelength shorter than about 550nm. Indirect and direct optical band gaps were decreased with increasing the annealing time.

• Transactions on Electrical and Electronic Materials
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• v.1 no.1
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• pp.22-25
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• 2000

Polycrystalline SBTN layered ferroelectric thin film with various Nb mole ratios were prepared by sol-gel method Pt/ $SiO_2$/Si (100) substrates. The films were annealed at different temperature and characterized in terms of phase and microstructure. The films were crystallized with a high (105) diffraction intensity and had rodike structure, SBTN films fired at 800$^{circ}C$ revealed standard hysteresis loops with no fatigue for up to 10$^{10}$ cycles. At an applied voltage of 5V the dielectric constant($varepsilon$) , dissipation factor (tan $delta$), remanent polarization(ZPr) and coercive field(Ec) of typical S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$) $O_{9+}$$alpha$/ thin film(x=0.1) prepared on Pt/ $SiO_2$/Si (100) were about 277.7, 0.042, 3.74$mu$C/$textrm{cm}^2$, and 24.8kv/cm respectively.ly.y. respectively.ly.y.y..

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.383-386
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• 2002

Polycrystalline Cu(In,Ga)Se$_2$(CIGS) thin-films were grown by co-evaporation on a soda lime glass substrate. In this paper the effects of the Se evaporation temperature on the properties of CuIn0.75Ga0.25Se2 (CIGS) thin films. Structure, surface morphology and optical properties of CIGS thin films deposited at various Se evaporation temperatures have been investigated using a number of analysis techniques. X-ray diffraction (XRD) analysis shows that CIGS films exhibit a strong <112> preferred orientation. As expected, at higher Se evaporation temperatures the films displayed a lower degree of crystallinity. The <112> peak was also enhanced and other CIGS peaks appeared simultaneously. These results were supported by experimental work using scanning electron microscopy When the Se evaporation temperature was increased, the average grain size also decreased together with a reduction Cu content. The Se evaporation temperature also had a significant inf1uence on the transmission spectra. Increasing the Se evaporation temperature, the cell efficiency was improved dramatically to 11.75% with Voc = 556 mV, Jsc = 32.17 mA/cm2 and FF = 0.66. The Se evaporation temperature is an important parameter in thin film deposition regardless of the deposition technique being used to deposit thin films

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.77-82
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• 1995

PTCR(Positive Temperature Coefficient of Resistivity) thermistor in thin film BaTiO$_{3}$ system was prepared by using radio frequency(13.56 MHz) and DC magnetron sputter equipment. Polycrystalline, surface structure, and R-T(Resistivity-Temperature) characteristics of the specimens were measured by X-ray diffraction(D-Max3, Rigaku, Japan), SEM(Scanning Electron Microscopy: M.JSM84 01, Japan), and insulation resistance measuring system (Keithley 719), respectively. Thin films characteristics of the thermistor showed different properties depending on the substrate even with the same sputtering condition. The thin film formed on the A1$_{2}$O$_{3}$ substrate showed a good crystalline and a low resistivity at below curie point. However, the thin films prepared on slide glass and Si wafer were amorphous. The thicknesses of the three samples prepared under the same process conditions were 700[.angs.], 637.75[.angs.], and 715[.angs.], respectively.