• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1019-1022
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• 2004

High performance p-ch poly-Si TFTs with excellent stability were developed. By using a frequency doubled DPSS CW laser, the a-Si on glass could be crystallized into one dimensional single crystalline silicon named as a sequential lateral crystallization (SLC) region. We fabricated p-ch TFTs on SLC region and the typical characteristic values of the TFTs were $u_{fe}$ = 180 $cm^2$/Vs, $V_{th}$ = -3 V, S.S. = 0.5 V/dec, and $I_{off}$ = 1 pA/um@ $V_d$ = -10V. It is found that the TFTs are very stable after bias stresses such as negative and positive gate biases, hot carrier bias and high current bias. These results indicate that the poly-Si in SLC region is suitable for system on glass (SOG) application.

• Korean Journal of Metals and Materials
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• v.46 no.11
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• pp.755-761
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• 2008

We fabricated thermally evaporated 10 nm-Ni/1 nm-Ir/(poly)Si films to investigate the energy saving property of silicides formed by rapid thermal annealing (RTA) at the temperature range of $300{\sim}1200^{\circ}C$ for 40 seconds. Moreover, we fabricated 100 nm-thick ITO/(poly)Si films with an rf-sputter as references. A transmission electron microscope (TEM) and an X-ray diffractometer were used to determine cross-sectional microstructure and phase changes. A UV-VIS-NIR and FT-IR (Fourier transform infrared spectroscopy) were employed for near-IR and middle-IR absorbance. Through TEM analysis, we confirmed 20~65 nm-thick silicide layers formed on the single and polycrystalline silicon substrates. Ir-inserted nickel silicide on single crystalline substrate showed almost the same absorbance in near IR region as well as ITO, but Ir-inserted nickel silicide on polycrystalline substrate, which had the uniform absorbance in specific region, showed better absorbance in near IR region than ITO. The Ir-inserted nickel silicide on polycrystalline substrate particularly showed better absorbance in middle IR region than ITO. The results imply that nano-thick Ir-inserted nickel silicides may have excellent absorbing capacity in near-IR and middle-IR region.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.795-800
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• 2008

A sublimation method using the SiC seed crystal and SiC powder as the source material is commonly adopted to grow SiC bulk single crystal. However, it has proved to be difficult to achieve the high quality crystal and the process reliability because SiC single crystal should be grown at very high temperature in closed system. The present research was focused to improve SiC crystal quality grown by PVT method through using the new inner guide tube. The new inner guide tube was designed to prevent the enlargement of polycrystalline region into single crystalline region and to enlarge the diameter of SiC single crystal. The 6H-SiC crystals were grown by conventional PVT process. The seed adhered on seed holder and the high purity SiC source materials are placed on opposite side in sealed graphite crucible surrounded by graphite insulation. The SiC bulk growth was conducted around 2300 $^{\circ}C$ of growth temperature and 50 mbar in an argon atmosphere of growth pressure. The axial thermal gradient across the SiC crystal during the growth was estimated in the range of 15${\sim}$20 $^{\circ}C$/cm.

• Bulletin of the Korean Chemical Society
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• v.23 no.4
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• pp.580-586
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• 2002

We investigated the effect of ionic component on crystalline morphology development during isothermal annealing in a sodium neutralized sulfonated poly(ethylene terephthalate) ionomer (Ion-PET) by time-resolved small-angle x-ray scattering (TR-SAX S) using synchrotron radiation. At early stage in Ion-PET, SAXS intensity at a low annealing temperature (Ta = 120 $^{\circ}C)$ decreased monotonously with scattering angle for a while. Then SAXS profile showed a peak and the peak position progressively moved to wider angles with isothermal annealing time. Finally, the peak intensity decreased, shifting the peak angle to wider angle. It is revealed that ionic aggregates (multiplets structure) of several nm, calculated by Debye-Bueche plot, are formed at early stage. They seem to accelerate the crystallization rate and make fine crystallites without spherulite formation (supported by optical microscopy observation). From decrease of peak intensity in SAXS,it is suggested that new lamellae are inserted between the preformed lamellae so that the concentration of ionic multiplets in amorphous region decreases to lower the electron density difference between lamellar crystal and amorphous region. In addition, analysis on the annealing at a high temperature (Ta = 210 $^{\circ}C)$ by optical microscopy, light scattering and transmission electron microscopy shows a formation of spherulite, no ionic aggregates, the retarded crystallization rate and a high level of lamellar orientation.

• International Journal of Precision Engineering and Manufacturing
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• v.5 no.3
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• pp.35-42
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• 2004

This research describes that the cutting characteristics and tool wear behavior in the micro cutting of three kinds of wear resistant cemented carbides (WC-Co; V40, V50 and V60) using PCD (Poly Crystalline Diamond) and PCBN (Poly crystalline Cubic Boron Nitride) cutting tools by use of the SEM (Scanning Electron Microscope) direct observation method. The purpose of this research is to present reasonable cutting conditions from the viewpoint of high efficient cutting refer to a precise finished surface and tool wear. Summary of the results is as follows: (1) The cutting forces tend to increase as the increase of the weight percentage of WC particles, and the thrust forces was larger than the principal forces in the cutting of WC-Co. These phenomena were different from the ordinary cutting such as cutting of steel or cast iron. (2) The cutting speed hardly influenced the thrust force, because of the frictional force between the cutting tool edge and small WC particles at low cutting speed region such as 2$\mu\textrm{m}$/s. It seemed that the thrust cutting force occurred by the contact between the flank face and work material near the cutting edge. (3) The wear mechanism for PCD tools is abrasion by hard WC particles of the work materials, which leads diamond grain to be detached from the bond. (4) From the SEM direct observation in cutting the WC-Co, it seems that WC particles are broken and come into contact with the tool edge directly. This causes tool wear, resulting in severe tool damage. (5) In the orthogonal micro cutting of WC-Co, the tool wear in the flank face was formed bigger than that in the rake face on orthogonal micro cutting. And the machining surface integrity on the side of the cutting tool with a negative rake angle was better than that with a positive one, as well as burr in the case of using the cutting tool with a negative rake angle was formed very little compared to the that with a positive one.

• Elastomers and Composites
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• v.51 no.1
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• pp.56-62
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• 2016

The isothermal crystallization behaviors of blends of poly(ethylene naphthalate) (PEN) and a thermotropic liquid crystalline polymer (TLCP) were investigated by differential scanning calorimetry (DSC) as functions of crystallization temperature and blend composition. Avrami analyses were applied to obtain information on the crystal growth geometry and the factors controlling the rate of crystallization. The crystallization kinetics of the PEN/TLCP blends followed the Avrami equation up to a high degree of crystallization, regardless of crystallization temperature. The calculated Avrami exponents for PEN/TLCP revealed three-dimensional growth of the crystalline region in each blend. The crystallization rate of each blend increased as the crystallization temperature decreased, and decreased as the TLCP content increased. The crystallization of PEN in the blend was affected by the addition of TLCP, which acts as a nucleating agent.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1050-1053
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• 2002

In this paper, Amorphous silicon on glass substrate was recrystallized to poly-crystalline silicon by solid phase crystallization (SPC) technology. The active region of thin film transistor (TFT) was fabricated by amorphous silicon. The output and transfer characteristics of thin film transistor with lightly doped drain (LDD) structure was measured and analyzed. As a results, analyzed TFTs reliability with LDD's length by various kinds argument such as sub-threshold swing coefficient, mobility and threshold voltages were evaluated. Stress effects in TFT were able to improve to the characteristics of turn-on current and hot carrier effects by LDD's length variations.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.185-188
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• 2002

In this paper, Amorphous silicon on glass substrate was recrytallized to poly-crystalline silicon by solid phase crystallization(SPC) technology The active region of thin film transistor(TFT) was fabricated by amorphous silicon. The output and transfer characteristics of thin film transistor with lightly doped drain(LDD) structure was measured and analyzed. As a results, analyzed TFT's reliability with LDD's length by various kinds argument such as sub-threshold swing coefficient, mobility and threshold voltages were evaluated. Stress effects in TFT were able to improve to the characteristics of turn-on current and hot carrier effects by LDD's length variations

• Polymer(Korea)
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• v.27 no.4
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• pp.293-298
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• 2003

The development of the crystalline structure of poly(trimethylene terephthalate) (PTT) in a confined geometry was investigated with optical microscope, small angle light scattering, and X-ray diffraction. The rejected distance, which was represented in terms of the parameter $\delta$, played an important role in determining the morphological patterns of poly (ethylene terethphalate) (PET/PTT) blend. In case of stepwise crystallization, the crystallization of PTT commenced in the interspherulitic region between the grown PET crystals and proceeded until the interspherulitic space was filled with the PTT crystals. The spherulitic surface of the PET crtstals acted as the nucleation sites where the PTT molecules preferentially crystallized, leading to the formation of transcrystalline structure. As a result, a mixed morphological pattern was observed in the PTT-rich phase: one was a typical spherulitic texture and the other was a transcrystalline texture. Some of the molecular conformations of PTT, which could adopt in the absence of the space limitation, were probably forbidden in the interlamellar and/or interfibrillar regions of the PET spherulite. This constraint was responsible for difference in the crystallization and melting behavior of PTT between the intra and interspheulitic regions of PET.

• Polymer(Korea)
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• v.27 no.2
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• pp.106-112
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• 2003

Poly(trimethylene terephthalate)(PTT) fibers were treated by passing on the plate heater to study the annealing effect on the change of morphological structure and physical properties. In the X-ray diffraction curves of PTT annealed, a sharp peak at 2$\theta$=15.6$^{\circ}$ appeared and the peak intensity became stronger with the increase of annealing temperature and time. This peak was based on the (010) plane of PTT crystals. The crystallinity determined by density measurement was also increased by annealing. With the increases of temperature and time, the dynamic viscoelastic behaviors were shown to be a large reduction in T(tan $\delta$$_{max}$). The birefringence and $T_g$ were also reduced, but the melting temperature was the same. These results mean that the molecular chains in armorphous region are transfered into the crystalline legion, making the remained chains relaxed during annealing at tensionless state.