• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.1019-1022
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• 2004

High performance p-ch poly-Si TFTs with excellent stability were developed. By using a frequency doubled DPSS CW laser, the a-Si on glass could be crystallized into one dimensional single crystalline silicon named as a sequential lateral crystallization (SLC) region. We fabricated p-ch TFTs on SLC region and the typical characteristic values of the TFTs were $u_{fe}$ = 180 $cm^2$/Vs, $V_{th}$ = -3 V, S.S. = 0.5 V/dec, and $I_{off}$ = 1 pA/um@ $V_d$ = -10V. It is found that the TFTs are very stable after bias stresses such as negative and positive gate biases, hot carrier bias and high current bias. These results indicate that the poly-Si in SLC region is suitable for system on glass (SOG) application.

• 대한금속재료학회지
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• 제46권11호
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• pp.755-761
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• 2008

We fabricated thermally evaporated 10 nm-Ni/1 nm-Ir/(poly)Si films to investigate the energy saving property of silicides formed by rapid thermal annealing (RTA) at the temperature range of $300{\sim}1200^{\circ}C$ for 40 seconds. Moreover, we fabricated 100 nm-thick ITO/(poly)Si films with an rf-sputter as references. A transmission electron microscope (TEM) and an X-ray diffractometer were used to determine cross-sectional microstructure and phase changes. A UV-VIS-NIR and FT-IR (Fourier transform infrared spectroscopy) were employed for near-IR and middle-IR absorbance. Through TEM analysis, we confirmed 20~65 nm-thick silicide layers formed on the single and polycrystalline silicon substrates. Ir-inserted nickel silicide on single crystalline substrate showed almost the same absorbance in near IR region as well as ITO, but Ir-inserted nickel silicide on polycrystalline substrate, which had the uniform absorbance in specific region, showed better absorbance in near IR region than ITO. The Ir-inserted nickel silicide on polycrystalline substrate particularly showed better absorbance in middle IR region than ITO. The results imply that nano-thick Ir-inserted nickel silicides may have excellent absorbing capacity in near-IR and middle-IR region.

• 한국전기전자재료학회논문지
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• 제21권9호
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• pp.795-800
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• 2008

A sublimation method using the SiC seed crystal and SiC powder as the source material is commonly adopted to grow SiC bulk single crystal. However, it has proved to be difficult to achieve the high quality crystal and the process reliability because SiC single crystal should be grown at very high temperature in closed system. The present research was focused to improve SiC crystal quality grown by PVT method through using the new inner guide tube. The new inner guide tube was designed to prevent the enlargement of polycrystalline region into single crystalline region and to enlarge the diameter of SiC single crystal. The 6H-SiC crystals were grown by conventional PVT process. The seed adhered on seed holder and the high purity SiC source materials are placed on opposite side in sealed graphite crucible surrounded by graphite insulation. The SiC bulk growth was conducted around 2300 $^{\circ}C$ of growth temperature and 50 mbar in an argon atmosphere of growth pressure. The axial thermal gradient across the SiC crystal during the growth was estimated in the range of 15${\sim}$20 $^{\circ}C$/cm.

• Bulletin of the Korean Chemical Society
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• 제23권4호
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• pp.580-586
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• 2002

We investigated the effect of ionic component on crystalline morphology development during isothermal annealing in a sodium neutralized sulfonated poly(ethylene terephthalate) ionomer (Ion-PET) by time-resolved small-angle x-ray scattering (TR-SAX S) using synchrotron radiation. At early stage in Ion-PET, SAXS intensity at a low annealing temperature (Ta = 120 $^{\circ}C)$ decreased monotonously with scattering angle for a while. Then SAXS profile showed a peak and the peak position progressively moved to wider angles with isothermal annealing time. Finally, the peak intensity decreased, shifting the peak angle to wider angle. It is revealed that ionic aggregates (multiplets structure) of several nm, calculated by Debye-Bueche plot, are formed at early stage. They seem to accelerate the crystallization rate and make fine crystallites without spherulite formation (supported by optical microscopy observation). From decrease of peak intensity in SAXS,it is suggested that new lamellae are inserted between the preformed lamellae so that the concentration of ionic multiplets in amorphous region decreases to lower the electron density difference between lamellar crystal and amorphous region. In addition, analysis on the annealing at a high temperature (Ta = 210 $^{\circ}C)$ by optical microscopy, light scattering and transmission electron microscopy shows a formation of spherulite, no ionic aggregates, the retarded crystallization rate and a high level of lamellar orientation.

• International Journal of Precision Engineering and Manufacturing
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• 제5권3호
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• pp.35-42
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• 2004

This research describes that the cutting characteristics and tool wear behavior in the micro cutting of three kinds of wear resistant cemented carbides (WC-Co; V40, V50 and V60) using PCD (Poly Crystalline Diamond) and PCBN (Poly crystalline Cubic Boron Nitride) cutting tools by use of the SEM (Scanning Electron Microscope) direct observation method. The purpose of this research is to present reasonable cutting conditions from the viewpoint of high efficient cutting refer to a precise finished surface and tool wear. Summary of the results is as follows: (1) The cutting forces tend to increase as the increase of the weight percentage of WC particles, and the thrust forces was larger than the principal forces in the cutting of WC-Co. These phenomena were different from the ordinary cutting such as cutting of steel or cast iron. (2) The cutting speed hardly influenced the thrust force, because of the frictional force between the cutting tool edge and small WC particles at low cutting speed region such as 2$\mu\textrm{m}$/s. It seemed that the thrust cutting force occurred by the contact between the flank face and work material near the cutting edge. (3) The wear mechanism for PCD tools is abrasion by hard WC particles of the work materials, which leads diamond grain to be detached from the bond. (4) From the SEM direct observation in cutting the WC-Co, it seems that WC particles are broken and come into contact with the tool edge directly. This causes tool wear, resulting in severe tool damage. (5) In the orthogonal micro cutting of WC-Co, the tool wear in the flank face was formed bigger than that in the rake face on orthogonal micro cutting. And the machining surface integrity on the side of the cutting tool with a negative rake angle was better than that with a positive one, as well as burr in the case of using the cutting tool with a negative rake angle was formed very little compared to the that with a positive one.

• Elastomers and Composites
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• 제51권1호
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• pp.56-62
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• 2016

The isothermal crystallization behaviors of blends of poly(ethylene naphthalate) (PEN) and a thermotropic liquid crystalline polymer (TLCP) were investigated by differential scanning calorimetry (DSC) as functions of crystallization temperature and blend composition. Avrami analyses were applied to obtain information on the crystal growth geometry and the factors controlling the rate of crystallization. The crystallization kinetics of the PEN/TLCP blends followed the Avrami equation up to a high degree of crystallization, regardless of crystallization temperature. The calculated Avrami exponents for PEN/TLCP revealed three-dimensional growth of the crystalline region in each blend. The crystallization rate of each blend increased as the crystallization temperature decreased, and decreased as the TLCP content increased. The crystallization of PEN in the blend was affected by the addition of TLCP, which acts as a nucleating agent.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 ITC-CSCC -2
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• pp.1050-1053
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• 2002

In this paper, Amorphous silicon on glass substrate was recrystallized to poly-crystalline silicon by solid phase crystallization (SPC) technology. The active region of thin film transistor (TFT) was fabricated by amorphous silicon. The output and transfer characteristics of thin film transistor with lightly doped drain (LDD) structure was measured and analyzed. As a results, analyzed TFTs reliability with LDD's length by various kinds argument such as sub-threshold swing coefficient, mobility and threshold voltages were evaluated. Stress effects in TFT were able to improve to the characteristics of turn-on current and hot carrier effects by LDD's length variations.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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• pp.185-188
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• 2002

In this paper, Amorphous silicon on glass substrate was recrytallized to poly-crystalline silicon by solid phase crystallization(SPC) technology The active region of thin film transistor(TFT) was fabricated by amorphous silicon. The output and transfer characteristics of thin film transistor with lightly doped drain(LDD) structure was measured and analyzed. As a results, analyzed TFT's reliability with LDD's length by various kinds argument such as sub-threshold swing coefficient, mobility and threshold voltages were evaluated. Stress effects in TFT were able to improve to the characteristics of turn-on current and hot carrier effects by LDD's length variations

• 폴리머
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• 제27권4호
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• pp.293-298
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• 2003

제한공간에서 형성되는 폴리(트리메틸렌 테레프탈레이트) (PTT)의 결정구조를 광학현미경, 소각 광산란 및 X-선 회절로 조사하였다. 인자 $\delta$로 대표할 수 있는 배제 성분의 이동거리는 폴리(에틸렌 테레프탈레이트) (PET/PTT) 블렌드의 형태구조 패턴을 결정하는데 중요한 역할을 하였다. 단계 결정화할 경우, PTT 결정화는 앞서 성장한 PET 결정의 구정 사이 영역에서 시작되었으며, 구정 사이 영역이 채워질 때까지 진행하였다. PET 구정 표면은 PTT 결정화에 매우 효과적인 핵 생성 작용을 유도함으로써 transcrystalline 구조의 PTT 결정을 유도하였다. 그 결과 PTT가 많은 상에서 전형적인 구정 구조와 함께 transcrystalline구조가 혼재하는 독특한 형태구조가 관찰되었다. PET 구정의 라멜라 사이나 피브릴 사이의 영역에서는 공간적 제한으로 인하여 PTT분자들의 형태 자유도가 감소하였으며, 이러한 감소 요인은 PET구정 내ㆍ외부에서의 PTT 결정화와 용융 거동에 차이를 유발하였다.

• 폴리머
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• 제27권2호
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• pp.106-112
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• 2003

연속순간 평판열처리가 폴리(트리메틸렌 테레프탈레이트) (PTT) 섬유의 미세구조 및 물성에 미치는 영향을 고찰하기 위해 열처리 온도 및 시간을 변화시키면서 PTT섬유를 처리하였다. X-선 회절 분석 결과 적도선 방향에서 (010)면의 회절 피크가 2$\theta$ = 15.6$^{\circ}$에서 관찰되었으며, 열처리 온도 및 열처리 시간의 증가에 따라 X-선 회절 강도 분포 곡선은 예리해졌다. 또한 열처리 시료의 결정 크기 및 중량분율 결정화도도 열처리 온도와 열처리 시간의 증가에 따라 모두 증가하였다. 동적 점탄성 특성을 분석한 결과 열처리 온도 및 열처리 시간의 증가에 따라 T(tan $\delta$$_{max}$)는 크게 감소하였으며, 복굴절률과 유리 전이 온도도 감소 하였고, 용융 온도는 변화가 없었다. 이로부터 열처리 온도 및 열처리 시간의 증가에 따라 비결정 영역 중 분자 사슬의 충전 밀도는 낮아지고, 분자 사슬은 긴장이 완화되는 것으로 생각되었다.