• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.371-372
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• 2006

Poly(${\varepsilon}-caprolactone$) (PCL) is a highly crystalline polymer that is miscible with several amorphous polymers including chlorinated polyether, poly(vinylchloride), poly(hydroxyether) and Bisphenol A polycarbonate. The crystallization behavior of miscible blend of amorphous/crystalline polymers has widely been studied. Generally a depression of the crystallization ability has been found with addition of amorphous component because of the reduction of chain mobility, the change of free energy of nucleation as a result of a specific interaction, and so on [1]. In this work, for the first time, the blend of PCL and copolymer of polyurethane containing polycaprolactone as a soft segment is considered. The structural similarity of TPU soft segment with PCL affects on formation of the miscible component and crystallization behavior of PCL in the blend. This has been studied using differential scanning calorimetry (DSC) and Wide-angle X-ray Scattering (WAXS).

• Korean Journal of Materials Research
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• v.22 no.4
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• pp.190-194
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• 2012

The formation of high-quality polycrystalline silicon (poly-Si) on relatively low cost substrate has been an important issue in the development of thin film solar cells. Poly-Si seed layers were fabricated by an inverse aluminum-induced crystallization (I-AIC) process and the properties of the resulting layer were characterized. The I-AIC process has an advantage of being able to continue the epitaxial growth without an Al layer removing process. An amorphous Si precursor layer was deposited on Corning glass substrates by RF magnetron sputtering system with Ar plasma. Then, Al thin film was deposited by thermal evaporation. An $SiO_2$ diffusion barrier layer was formed between Si and Al layers to control the surface orientation of seed layer. The crystallinity of the poly-Si seed layer was analyzed by Raman spectroscopy and x-ray diffraction (XRD). The grain size and orientation of the poly-Si seed layer were determined by electron back scattering diffraction (EBSD) method. The prepared poly-Si seed layer showed high volume fraction of crystalline Si and <100> orientation. The diffusion barrier layer and processing temperature significantly affected the grain size and orientation of the poly Si seed layer. The shorter oxidation time and lower processing temperature led to a better orientation of the poly-Si seed layer. This study presents the formation mechanism of a poly seed layer by inverse aluminum-induced crystallization.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.433-439
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• 2011

Poly Si TFTs (poly silicon thin film transistors) with p channel those are annealed HT (high temperature) with gate poly crystalline silicon and LT (low temperature) with metal gate electrode were fabricated on quartz substrate using the analyzed data and compared according to the activated grade silicon thin films and the size of device channel. The electrical characteristics of HT poly-Si TFTs increased those are the on current, electron mobility and decrease threshold voltage by the quality of particles of active thin films annealed at high temperature. But the on/off current ratio reduced by increase of the off current depend on the hot carrier applied to high gate voltage. Even though the size of the particles annealed at low temperature are bigger than HT poly-Si TFTs due to defect in the activated grade poly crystal silicon and the grain boundary, the characteristics of LT poly-Si TFTs were investigated deterioration phenomena those are decrease the electric off current, electron mobility and increase threshold voltage. The results of transconductance show that slope depend on the quality of particles and the amplitude depend on the size of the active silicon particles.

• Bulletin of the Korean Chemical Society
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• v.28 no.2
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• pp.193-199
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• 2007

Raman and fluorescence spectroscopies were employed to study the coil effects on the intermolecular structure of a rod-coil liquid crystalline (LC) oligomer, the esterification products of ethyl 4-[4'-oxy-4-biphenylcarbonyloxy]- 4'-biphenylcarboxylate with poly(propylene)oxides (PPO) (DP=12) and poly(ethylene oxide)s (PEO) (DP=12). Three different vibrational modes (carbonyl, aromatic C-H, and aromatic C=C) obtained from the Raman experiment at variable temperature indicate that PPO and PEO coils induce the hydrogen bonding in a different manner. Further information about the micro-environment around the mesogenic unit obtained by fluorescence excitation spectra of P12-4 (LC with PPO coil) and 12-4 (LC with PEO coil) suggests that the mesogenic unit of P12-4 is quite different from that of 12-4 in intermolecular structure. This study supports the results obtained only from Raman spectroscopy, providing more accurate information about the intermolecular structural changes of liquid crystalline polymers at a molecular level during the phase transitions.

• Elastomers and Composites
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• v.56 no.2
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• pp.92-99
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• 2021

Microstructure-dependent changes in the crystalline properties of poly(ethylene-co-vinyl acetate) (EVA) was investigated using various EVAs at different VA contents via X-ray diffraction (XRD). The parameters analyzed herein were percentage crystallinity (X_c), interplanar crystal spacing (d_hkl), crystal stack size (D_hkl), and the number of crystal plane piles (N_hkl). The X_cs of [110] and [200] crystals were 21.0-4.1 and 6.7-1.4%, respectively, and they decreased by approximately 2.3 and 0.7% for every mol% of the VA content, respectively. The X_c ratios of the [110] and [200] crystals were approximately 3. The d₁₁₀s and d₂₀₀s values were 0.41-0.42 and 0.37-0.38 nm, respectively. The D₁₁₀s and D₂₀₀s values were 9.56 -21.92 and 7.00-16.42 nm, respectively. The d_hkls increased with an increase in the VA content, whereas the D_hkls decreased. The N₁₁₀s and N₂₀₀s were 22.7-51.3 and 18.3-43.2, respectively, and they decreased by increasing the VA content. EVA with the same VA content showed different crystalline properties as per the suppliers, and some EVAs deviated from the average trends. This could be explained by the difference in their microstructures such as the sizes and distribution uniformity of the ethylene sequences in EVA chains.

• Journal of the Korean Chemical Society
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• v.41 no.3
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• pp.157-165
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• 1997

The transesterification reaction could be used to the technical production as it forms an in-situ compatibilizer during the processing of polymer blends. Thus, TR-4,6(poly(tetramethylene-4,4'-terephthaloyldioxydibenzoate-co-hexametylene-4,4'-terephthaloyldioxydibenzoate), one of thermotropic liquid crystalline polymers was synthesized and was blended with PBT(polybutylene terephthalate), one of engineering plastics, to study the transesterification reaction. The transesterification reactions between two components, TR-4,6 and PBT, were monitored by IR, DSC and $^{13}C-NMR$ and analyzed by a statistical treatment method. Also, the reaction rates and the sequence distributions of repeating unit were (calculated and) invesitigated.

• Bulletin of the Korean Chemical Society
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• v.21 no.10
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• pp.1031-1034
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• 2000

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.153-153
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• 2011

유리나 폴리머를 기판으로 하는 TFT(Thin film transistor), solar cell에서는 낮은 공정 온도에서($200{\sim}500^{\circ}C$) amorphous semiconductor thin film을 poly-crystal semiconductor thin film으로 결정화 시키는 기술이 매우 중요하게 대두 되고 있다. Ge은 Si에 비해 높은 carrier mobility와 낮은 녹는점을 가지므로, 비 저항이 낮을 뿐만 아니라 더 낮은 온도에서 결정화 할 수 있다. 하지만 일반적으로 쓰이는 Ge의 결정화 방법은 비교적 높은 열처리 온도를 필요로 하거나, 결정화된 원소에 남아있는 metal이 불순물 역할을 한다는 문제점, 그리고 불균일한 결정크기를 만든다는 단점이 있었다. 그 중에서도 현재 가장 많이 쓰이고 있는 MIC, MILC는 metal과 a-Ge이 접촉되는 interface나, grain boundary diffusion에 의해 핵 생성이 일어나고, 결정이 성장하는 메커니즘을 가지고 있으므로 단순 증착과 열처리 만으로는 앞서 말한 단점을 극복하는데 한계를 가지고 있다. 이에 PIII&D 장비를 이용하면, 이온 주입된 원소들이 모재와 반응 할 수 있는 표면적이 커짐으로 핵 생성을 조절 할 수 있을 뿐만 아니라, 이온 주입 시 발생하는 self annealing effect로 결정 크기까지도 조절할 수 있다. 또한 이러한 모든 process가 한 진공 장비 내에서 이루어지므로 장비의 단순화와, 공정간 단계별로 발생하는 불순물과 표면산화를 막을 수 있으므로 절연체 위에 저항이 낮고, hall mobility가 높은 poly-crystalline Ge thin film을 만들 수 있다. 본 연구에서는, 주로 핵 생성과정에서 seed를 만드는 이온주입 조건과, 결정 성장이 일어나는 증착 조건에 따라서 Ge의 결정방향과 크기가 많은 차이를 보이는데, 이는 HR-XRD(High resolution X-ray Diffractometer)와 Raman spectroscopy를 이용하여 측정 하였으며, SEM과 AFM으로 결정의 크기와 표면 거칠기를 측정하였다. 또한 Hall effect measurement를 통해 poly-crystalline thin film 의 저항과 hall mobility를 측정하였다.

• Proceedings of the IEEK Conference
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• 2000.07b
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• pp.933-936
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• 2000

N-channel poly-Si TFT, processed by Solid Phase Crystalline(SPC) on a glass substrate, has been investigated by measuring its electrical properties before and after stressing. It is observed that the threshold voltage shift due to electrical stress varies with various stress conditions. Threshold voltages measured in 1.5um and 3um poly-Si TFT’s are 3.3V, 37V respectively. With the threshold voltage shift, the degradation of transconductance and subthreshold swing is also observed.

• Journal of Sensor Science and Technology
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• v.7 no.2
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• pp.97-102
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• 1998

Organic thin film EL devices using PPV(poly (p-phenylenevinylene)) as emitter were fabricated on various conditions and structures, their electro-optical properties were estimated. Fabricated EL devices had structures of single layer(ITO(indium tin oxide)/PPV/Mg), double layer(ITO/PVK(poly(N-vinylcarbazole))/PPV/Mg and ITO/PPV/Polymer matrix + PBD/Mg) and three layer (ITO/PVK/PPV/PS(polystyrene)+PBD(butyl-2-(4-bipheny])-5-(4-tert-butylphenyl-1,3,4-oxadiazole))/Mg), their electro-optical characteristics were compared with each other. In structure of double layer (ITO/PPV /Polymer matrix + PBD/Mg), the used polymer-matrices were PMMA(poly(methyl methacrylate), PC(polycarbonate), PS and MCH(side chain liquid crystalline homopolymer). When PS as a hole transport layer was used, the luminance characteristics on concentration of PBD was obtained. In results, current-voltage-luminance curves of fabricated devices had characteristics of tunneling effect and the device showed a stable light emitting.