• 한국기계가공학회지
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• 제12권3호
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• pp.1-6
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• 2013

This study has focused on transparency recovering of the polycarbonate by polishing its surface for recycling. The polycarbonate has many properties such as excellent mechanical strength, electrical insulating, superior heat resistance to other plastic material and especially good transparency. It has been used as barrier for the traffic noise at the roadside and the greenhouse for the palm house. But the polycarbonate has changed slightly as time goes by 10 years because of exposure to the strong sunlight and oxidization in the atmosphere, as result has lost its transparency. Magnetic assisted polishing has been utilized as an effective polishing method to recover the transparency of polycarbonate. The polycarbonate which has been used for 10 years was adopted as the sample. The first surface roughness of the sample was 1$1.23{\mu}mRa$, $7.5{\mu}mRz(DIN)$ respectively. In the experimental results, it showed that the surface roughness of the polished sample improved $0.013{\mu}mRa$, $0.08{\mu}mRz(DIN)$ from the first surface roughness respectively. The surface roughness get almost back again by magnetic assisted polishing. These results also showed that the magnetic assisted polishing was efficient machining method to reuse the polycarbonate material.

• 한국기계가공학회지
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• 제14권6호
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• pp.41-48
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• 2015

Stainless steel mesh has been used as a filter in various fields, including domestic, medical, etc. However, the surface before machining may have an adverse effect the product quality and performance because it is not smooth. Especially, adsorbed impurities in the surface result in difficulty in cleaning. Therefore, in this paper, we propose an improved surface quality through electrochemical polishing (ECP). Two electrodes, composed of STS304 (anode) and copper (cathode) underwent machining with two conditions according to polishing time and current density. As the polishing time and current density increase, the surface of curvature decreases, and roughness and material removal rate (MRR) improves. The machined surface roughness and image were obtained through the atomic force microscope (AFM) and stereoscopic microscope. The study also analyzed hydrophilic effect through contact angles. This obtains corrosion resistance, smoothness, hydrophilic property, etc.

• 전기전자학회논문지
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• 제23권4호
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• pp.1387-1392
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• 2019

비구면 거울은 구형 거울보다 무게가 가볍고 성능이 우수하지만, 그 형상을 가공하고 가공 정밀도를 측정하는 것이 어렵다. 특히 위성에 사용되는 대형 조리개 비구면 미러는 높은 정밀도가 필요하고 처리하는 데 시간이 오래 걸린다. 기존의 연마 공정에는 갠트리 구조를 갖는 컴퓨터 수치 제어 공작기계가 사용되고 있으나, 자유도가 부족하여 복잡한 형상을 처리하기 어렵다는 단점이 있다. 이러한 문제를 극복하기 위해 다관절 산업용 로봇을 사용하는 연마 시스템을 개발하였다. 개발된 시스템은 공구 경로 생성 프로그램, 실시간 로봇 모니터링 및 제어 프로그램으로 구성되며, 시뮬레이션 소프트웨어와 실제 로봇 작동을 통해 개발된 시스템의 성능을 검증하였다.

• 한국표면공학회지
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• 제41권1호
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• pp.38-42
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• 2008

316L stainless steel welding tube was electrolytically polished and the inner surface characteristics of the tube were tested. Electro-polishing variables such as current, voltage, concentration of electrolyte and electropolishing time were changed to seek for optimum condition. These makes a optimum conditions for the electro-polishing as 4000 A, 9 V, 1.7 specific gravity of electrolyte, and 30 minute of electro-polishing time. It makes the surface roughness as Ra < $0.25{\mu}m$. XPS test resulted as the ratio of CrO/FeO equals or more to 3/1. AES test resulted as the thickness of CrO film of $38{\AA}$. DTA test resulted as the tube did not react with $N_2,\;H_2\;and\;O_2$ gas below 1073K. As summarize above results, the electro- polished 316L stainless steel welding tube satisfied the conditions to apply as a pipeline for semi- conductor production facility and clean room.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 The 6th International Symposium of East Asian Resources Recycling Technology
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• pp.715-718
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• 2001

This study uses traditional alum coagulation and sedimentation process to treat CMP wastewater from cleaning after polishing. The primary goal is to successfully recycle both solid fines and water for semiconductor manufacturing. Results indicated that CMP wastewater may be successfully treated to recover clean water and fine particles by alum coagulation. The optimum operating conditions for coagulation are as fellowing: alum dosage of 10 ppm, pH at 5, rapid mixing speed at 800 rpm, 5 min rapid mixing time, and long slow mixing time. The treated water with low turbidity and an average residual aluminum ion concentration of 0.23 ppm may be considered for reuse. The settled sludge after alum coagulation contains mainly SiO$_2$particle with a minor content of aluminum (1.7 wt%) may be considered as raw materials for glass and ceramic industry.

• Journal of Electrical Engineering and Technology
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• 제13권2호
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• pp.886-891
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• 2018

Colloid silica using as abrasive for polishing sapphire has been extensively studied, which mechanism has also been deeply discussed. However, by the requirement of application enlargement and cost reduction, some new problems appear such as silica service life time, particle diameter mixing, etc. In this paper, several influences of colloid silica usage on sapphire CMP are examined. Results show particle diameter and concentration, pH value, service life time, particle diameter mixing heavily influence removal rate. Further analysis discloses there are two main effect aspects which are quantity of hydroxyl group, contact area for abrasive density stacking between abrasive and sapphire. Based on the discussions, a dynamic process of sapphire polishing is proposed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.558-559
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• 2007

A commercially de-waxer which kinds of solvent after was used to remove a thick organic wax film after polishing process and several steps of SC-1 cleanings were followed for the removal of organic wax residues and particles which requires long process time and high cost of ownership (COO). DIO3 was used to remove organic wax residues too achieve low COO. In this study, 0103 rinsing could use instead of 01 water rinsing. The process time and chemical consumption were reduced by using DIO3.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.410-410
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• 2012

The continuous monolayer graphene was synthesized on electro-polished copper foil. Electro-polishing sticks off the coating layer of copper foil, which prevents the continuous graphene growth. The quality of continuous graphene is dependent on roughness of copper foil. Copper foil roughness could be controlled by changing polishing condition. The effects of working voltage (4-6 V) and time (30-70 sec) for electro-polishing were systematically examined. The change of surface roughness was checked with AFM.

• 한국기계가공학회지
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• 제11권1호
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• pp.1-6
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• 2012

The polishing of silicon wafers has an important role in semiconductor manufacturing. Generally, getting a flat surface such as a mirror is the purpose of the process. The wafer surface roughness is affected by many variables such as the characteristics of the carrier head unit, operation, speed, the pad and slurry temperature. Optimum process conditions for experimental temperature, pH value, down-force, slurry ratio are investigated, time is used as a fixed factor. This study carried out a series of experiments at varying platen, chuck rpm and oscillation cpm taking particular note of the difference between the rpm and the affect it has on the surface roughness. In this experiment determine the optimum conditions for polishing silicone wafers.

• 한국공작기계학회논문집
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• 제17권1호
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• pp.21-28
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• 2008

The final polishing process is based on slurry, pad, conditioner, equipment. Therefore, the concept of wafer final polishing is also necessary for repeatability of results between polished wafers. In this study, the machining conditions have a pressure, table speed, machining time and slurry ratio. This research investigated the surface characteristics that apply variable machining conditions and response surface methodology was used to obtain more flexible and optimumal condition base on Taguchi method. On the base of estimated response surface curvature from the equation and results of Taguchi method, combined design of experiment was considered to lead to optimumal condition. Finally, polished wafer was obtained mirror like surface.